BACKGROUND OF THE INVENTION
The present invention relates to BIST (built-in self-test) technology and more particularly to technology effectively applied to a semiconductor integrated circuit in which a test circuit for testing memory is built in on a chip.
As a memory having a BIST circuit, patent publication 1 describes a semiconductor integrated circuit having a BIST circuit capable of high-speed processing by command sequencers and internal clock generating circuits. Patent publication 2 describes semiconductor storage with a built-in BIST circuit comprising a test clock generator, an address counter, and a sequencer.
[Patent publication 1] Japanese Unexamined Patent Publication No. Hei 11(1999)-329000
[Patent publication 2] Japanese Unexamined Patent Publication No. Hei 10(1998)-162600
SUMMARY OF THE INVENTION
The patent publication 1, which discloses sequencer-based BIST technology, is limited in test sequences and does not cover a variety of test sequences. In patent publication 2, the circuit scale increases since a PLL circuit is adopted for a test clock generator. This is because the PLL circuit requires a voltage controlled oscillator and a D/A converter that require voltage controlled current source and the like.
The inventors discovered that since much time is required for data retention tests in semiconductor storages such as DRAM, if a high-speed tester is used for the tests, wait time in the date retention tests becomes useless, resulting in higher test costs. Accordingly, the inventors studied the use of a low-speed tester and making up for functional lacks by a BIST circuit built in on a chip.
An object of the present invention is to provide a semiconductor integrated circuit that expands test functions by adopting a self-test unit such as a BIST circuit, and reduces an increase in circuit scale by adding the self-test unit.
The aforementioned and other objects and novel characteristics of the present invention will become apparent from the description of this specification and the accompanying drawings.
The typical disclosures of the invention will be summarized in brief as follows.
<A Variety of Addressing Modes>
A semiconductor integrated circuit according to the present invention comprises a memory (5) that includes plural memory banks and is accessed by specifying a bank address, an X address, and a Y address, and a self-test part (3) that tests the memory in response to commands. The self-test part has plural modes of generating access addresses to test the memory. The plural modes of generating access addresses differ from each other in the modes of updating X addresses, Y addresses, and bank addresses. In other words, the self-test part has an address counter (35) accommodating plural addressing modes that are different in how to update X addresses, Y addresses, and bank addresses. A variety of addressing modes provided for testing contribute to the expansion of BIST-based test functions. The memory banks have plural dynamic-type memory cells arrayed in matrix, and the semiconductor integrated circuit is configured as synchronous DRAM, for example.
The modes of generating access addresses are plural modes selected from among single bank X scanning that updates bank addresses after one round of X addresses, single bank Y scanning that updates bank addresses after one round of Y addresses, and multi-bank X scanning that updates X addresses after one round of bank addresses.
<Sequencer for Timing Generation>
The self-test part has plural test sequencers (31) corresponding to plural test modes. The plural test sequencers are selected according to the result of decoding the commands. By providing plural sequencers each corresponding to each test timing, the area of the semiconductor integrated circuit can be easily reduced in comparison with program-controlled general-purpose sequencers requiring memory for storing programs. In short, it is easy to add and delete individual sequencers according to the necessity of test timing, customizing becomes possible for each of the products and kinds of semiconductor integrated circuits, and area overhead can be reduced.
<Write Data Generating Circuit>
The semiconductor integrated circuit according to the present invention includes a write data generating circuit (36) that generates write data for test in plural modes by using a shift register having a feedback loop. The write data generating circuit includes: a shift register (QW0 to QW3) of plural bits; a first feedback loop (61) through which the output of an output side start storage stage (QW0) of the shift register is fed back to the input of an output side end storage stage (QW3); a first selector (62) that selectively feeds back the output of the output side start storage stage of the shift register to the input of the start storage stage; and a second selector (64) that selects between the output and input of the output side start storage stage of the shift register. Since the write data generating circuit uses the shift register having the feedback loop, in comparison with general-purpose pattern generating circuits configured to selectively generate given patterns upon the loading of control data stored in ROM as typified by ALPG (algorithmic pattern generator), write data of a variety of patterns can be easily generated on a comparatively small logical scale.
<Clock Generating Circuit>
A clock generating circuit (32) is adopted that generates a clock signal for test (CKIN) supplied to the memory. The clock generating circuit comprises: a ring oscillator (70) capable of changing the number of gate stages of oscillation loop; changeable frequency dividers (71 to 73) that frequency-divide the output of the ring oscillator; and an oscillation frequency control circuit that controls the number of gate stages of the oscillation loop based on a result of comparison between predetermined output of the changeable frequency dividers and an external clock signal. The external clock signal (CKEX) may be a clock signal of a relatively low frequency such as operation frequencies supported by low-speed testers. If the frequency division ratio of the clock signal used as a test clock signal is smaller than that of the clock signal (CKC) inputted to the comparator (74), the frequency of the test clock signal (CKIN) can be made higher than the low-speed clock signal (CKEX) of the tester, contributing to speedup in tests. Here, since the ring oscillator (70) capable of changing the number of gate stages of an oscillation loop is used to generate a desired frequency, in comparison with PLL circuits, circuit scale can be significantly reduced at some cost of the accuracy of frequency synchronization, contributing to reduction in chip occupation area.
Specifically, the ring oscillator includes plural selectable oscillation loops that are different from each other in the number of gate stages. The oscillation frequency control circuit includes: a frequency comparator 74 that compares predetermined output of the changeable frequency dividers with the frequency of an external clock signal; and a counter 75 that increments or decrements a count value according to comparison results by the frequency comparator. A count value of the counter is used to select an oscillation loop of the ring oscillator so as to match the predetermined output of the changeable frequency dividers to the frequency of the external clock signal.
Effects obtained by typical disclosures of the invention will be described in brief as follows.
Test functions can be expanded by adopting a test part such as a BIST circuit into a semiconductor integrated circuit such as synchronous DRAM, and an increase in circuit scale can be reduced by adding a self-test part.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a block diagram showing a detailed example of a BIST circuit;
FIG. 2 is a block diagram showing an outline of a synchronous DRAM (SDRAM) according to an embodiment of the present invention;
FIG. 3 is a block diagram showing an example of a memory core included in the SDRAM;
FIG. 4 is a block diagram showing an example of an address counter;
FIG. 5 illustrates addressing modes by an address counter;
FIG. 6 is a timing chart showing the operation timing of an address counter in SB-XSCAN, its operation timing in SB-YSCAN, and its operation timing in MB-XSCAN;
FIG. 7 is a block diagram showing a configuration of test sequencers;
FIG. 8 is a timing chart showing the state of a starter sequencer and the state of a tri-state buffer;
FIG. 9 is a state transition diagram of starter sequencer;
FIG. 10 is a logical circuit diagram showing a logical configuration of a state machine of starter sequencer;
FIG. 11 is a logical circuit diagram showing a decoding part for 2 bits QS0 and QS1 of the state machine;
FIG. 12 illustrates a timing sequence of SB-Write/Read;
FIG. 13 is a diagram showing state transition of subsequencer associated with SB-Write/Read;
FIG. 14 is a diagram showing state transition of a general-purpose timer of a subsequencer;
FIG. 15 is a logical circuit diagram showing a logical configuration of a general-purpose timer;
FIG. 16 is a logical circuit diagram showing a logical configuration of a state machine of a subsequencer;
FIG. 17 illustrates a decoding part for 3 bits QC0, QC1, and QC2 of a state machine;
FIG. 18 illustrates timing sequences achieved by other plural test sequencers;
FIG. 19 is a timing chart of a timing generation operation of a test sequencer;
FIG. 20 is a logical circuit diagram showing an example of a write data generating circuit;
FIG. 21 illustrates operation modes of the write data generating circuit by equivalent circuits;
FIG. 22 illustrates some concrete examples of generating write data by the write data generating circuit;
FIG. 23 is a block diagram showing a clock generating circuit;
FIG. 24 is a logical circuit diagram showing a ring oscillator;
FIG. 25 is a logical circuit diagram showing a frequency comparator;
FIG. 26 is a timing chart showing operation waveforms of the frequency comparator;
FIG. 27 is a timing chart showing clock generation operation timing by a clock generating circuit; and
FIG. 28 is a diagram showing a test flow of SDRAM.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
<Synchronous DRAM Incorporating a BIST Circuit>
FIG. 2 shows an outline of a synchronous DRAM (SDRAM) according to an embodiment of the present invention. SDRAM 1 is formed on one semiconductor board such as a single-crystal silicon by a well-known semiconductor integrated circuit manufacturing technology. The synchronous DRAM 1 includes a chip interface circuit 2, a BIST circuit 3 as a self-test part, a selector 4, and a memory core 5 as a memory. The chip interface circuit 2 is supplied with an address signal and a memory access control signal. When a test enable signal EN is put into an enable level by the supplied memory access control signal, test operations by the BIST circuit 3 are enabled, and the selector 4 selects a test address and a test control signal which are generated in the BIST circuit 3, and supplies them to the memory core 5. If the test operations on the memory core 5 by the test address and the test control signal result in an error, a fail signal FAIL rises. When the test enable signal EN is at a disable level, the selector 4 supplies the address signal and the memory access control signal which are supplied to the chip interface circuit 2, to the memory core 5. Thereby, the memory core 5 operates as usual.
FIG. 3 shows an example of the memory core 5. The memory core 5 has four memory banks BNK0 to BNK3. Each of the memory banks BNK0 to BNK3 has memory cells of dynamic type arranged in matrix, and terminals for selecting the memory cells are connected to word lines and data input-output terminals are connected to bit lines. The bit lines are connected with a sense amplifier train (SA) 10 and a column selection switch train (CSW) 11. The sense amplifier train 10 senses and amplifies storage information read into the bit lines. As external address signals used to select a memory cell, a bank address signal BA for selecting a bank, and an X, Y address signal Ai for specifying X address (row address) and column address (Y address) in the bank are supplied. A row address signal is supplied to a row address buffer (RAB) 12 and supplied to the row decoder (RDEC) 13 for selecting the word line. A column address signal is supplied to a column address buffer (CAB) 14, and supplied to a column decoder (CDEC) 15 for selecting the column selection switch train 11. A bit line selected by the column decoder 15 is conducted to a latch circuit (DLAT) 18 through a data control circuit (DCNT) 17. Data read from the memory banks and latched into the latch circuit 18 is outputted as DQ from a data input-output buffer (DIO) 19. Write data DI supplied to the data input-output buffer 19 is latched into the latch circuit 18 and supplied to the memory banks.
A command decoder (CDEC) 20, a command logic (CLOG) 21, and a mode register (MREG) 22 are provided to control the operation of the memory core 5. The command decoder 20 is supplied with access control signals /RAS, /CAS, and /WE, which are generally used in DRAM. Furthermore, a part of the X, Y address signal Ai is supplied to the command decoder 20 as an access command. The command decoder 20 gives a command decode signal corresponding to a combination of levels of the /RAS, /CAS, and /WE signals and the access command to the command logic 21. The command logic 21 controls operation timing for internal circuits such as the row address decoder and the sense amplifier train. An internal clock signal used for timing control is generated by a clock generator (CPG) 24 inputting a clock signal /CKIN. Data output timing is synchronized to a delay locked loop circuit (DLL) 25 synchronizing to a clock signal /CKIN. A refresh circuit is included in a functional block of the row address buffer 12.
<BIST Circuit>
FIG. 1 shows an example of a BIST circuit 3. In FIG. 1, the selector 4 of FIG. 2 is omitted. The BIST circuit 3 includes a BIST control circuit 30, plural test sequencers 31, a clock generating circuit 32, and a pattern generating circuit 33. The pattern generating circuit 33 includes an address counter 35, a write data generating circuit 36, a scrambler 37, a multiplexer (MUX) 38, and a command encoder 39.
The chip interface circuit 2 admits control signals /CS, /RAS, /CAS, and /WE, a bank address signal BA, an X, Y address signal Ai, a clock enable signal/CKE, and an external clock signal CKEX. The external clock signal CKEX has the low-speed clock cycle time of 600 ns. /CS designates a chip select signal that selects the operation of SDRAM1. /RAS designates a row address strobe signal. /CAS designates a column address strobe signal. /WE designates a write enable signal. The chip interface circuit 2 enables the external clock signal CKEX when the clock enable signal /CKE is enabled, and synchronously with the external clock signal CKEX, captures other signals /CS, /RAS, /CAS, and /WE, the address signals BA and Ai. When the captured signals /CS, /RAS, /CAS, and /WE are a prescribed combination of levels, the chip interface circuit 2 assumes the enable signal EN to be at an enable level, and directs the BIST circuit 3 to enter the BIST mode.
When the signal EN is at an enable level, the BIST control circuit 30 captures the control signals /RAS, /CAS, and /WE, the bank address signal BA, the X, Y address signal Ai, and the external clock signal CKEX, which are outputted from the chip interface circuit 2. Upon recognizing the BIST mode by the signal EN, the BIST control circuit 30 successively captures a start address of the test, an initial value of write data, a sequence command, and other control information from an input route of the address signal Ai. The BIST control circuit 30 gives control information for clock generation to the clock generating circuit 32 to decide the frequency of clock signals CKIN and /CKIN for the test, gives the sequence command to the test sequencer 31, and gives control information to the pattern generating circuit 33.
Plural test sequencers 31 are provided correspondingly to plural test modes. One test sequencer 31 corresponding to a given sequence command generates test control codes ACT, WRIT, READ, PRE, and REF according to the test operation procedure and gives them to a command encoder 39. The command encoder 39 generates the test control signal /RAS, /CAS, or /WE according to a test control code, and gives it to the memory core 5. In parallel with this, the test sequencer 31 controls the address counter 35 over the generation of an address pattern corresponding to the sequence command, and generates an X address signal PX, a Y address signal PY, and the bank address signal BA. The X address signal PX and the Y address signal PY are scrambled in the scrambler 37 and given to the memory core 5 by the address multiplex system by the multiplexer 38, and the bank address signal BA is given to the memory core 5. The initial value of write data necessary for the test operation is loaded from the BIST control circuit 30 into the write data generating circuit 36, and according to the test procedure by the test sequencer 31, write data generated by the write data generating circuit 36 is supplied to the memory core 5 as write data DI through the scrambler 37. The test control code ACT denotes a word line selection operation, WRIT denotes a data write operation, READ denotes a data read operation, PRE denotes a precharge operation, and REF denotes a refresh operation.
The memory core 5 performs memory test operations according to the control of the BIST circuit 3. For example, the memory core 5 internally detects a mismatch between write data and read data, and outputs a detection result as parallel test result PTE. According to this example, the parallel test result PTE is put into a high level (logical value “1”) when a mismatch is detected. For mismatch detection by the parallel test result PTE or anomaly detection by state anomaly detection result ERR of the BIST circuit 3, the result is held in a latch 40 and outputted to the outside as a fail signal FAIL. Here, the fail signal FAIL is a test result by the BIST circuit 3.
<A Variety of Addressing Modes>
FIG. 4 shows an example of the address counter 35. The address counter 35 includes a counter (XCUNT) 40 for X address PX, a counter (BCUNT) 41 for bank address BA, a counter (YCUNT) 42 for Y address, and selection gates (SGT) 43 to 45 that selectively connect or disconnect carry output CO and carry input CI of the counters 40 to 42. The SGT 43 can select high power impedance, and the SGTs 44 and 45 can select output for one of two inputs or high power impedance. By switching carry transmission paths between the counters 40 and 42 by the SGTs 43 to 45, a variety of addressing modes are achieved. A start address is preset at the counters 40 to 42 by the BIST control circuit 30. The counters 40 to 42 perform count operation synchronously with the clock signal CKIN. The operation of the counters 40 to 42 and the selection gates 43 to 45 is controlled by output of the test sequencer 31.
FIG. 5 shows addressing modes by the address counter 35. The figure shows single bank X scanning (SB-XSCAN) that updates bank addresses after one round of X addresses, single bank Y scanning (SB-YSCAN) that updates bank addresses after one round of Y addresses, and multi-bank X scanning (MB-XSCAN) that updates X addresses after one round of bank addresses. Addressing modes in the individual addressing modes and the connection states of carry transmission paths are as shown in the figure.
FIG. 6 shows the operation timing of the address counter 35 in SB-XSCAN, its operation timing in SB-YSCAN, and its operation timing in MB-XSCAN. CO(PX) designates carry output of XCUNT 40, CO(BA) designates carry output of BCUNT41, and CO(PY) designates carry output of YCUNT 42. The field of MB-SCAN (last timing) shows that a bank address BA (WRIT) and a Y address PY (WRIT) for data write operation (WRIT) are outputted out of phase with those for word line selection operation (ACT). This is done to prevent the occurrence of access inconvenience caused by successively updating bank addresses.
The address counter 35 covers the SB-XSCAN, SB-YSCAN, and MB-XSCAN addressing modes, and can provide for the addressing modes by switching the carry paths among the counters 40 to 42 for bank addresses, X addresses, and Y addresses. Since the address counter 35 provides for the MB-XSCN mode, it can also apply to multi-bank memories adopted by mass-storage memories. Since it covers a variety of addressing modes for memory tests, the BIST circuit 3 can be used for not only burn-in and probe inspection but also selection.
<Sequencer for Timing Generation>
FIG. 7 shows a configuration of the test sequencers 31. The test sequencers 31 for test timing generation each constitute a single control logic by one set of a starter sequencer 50-i (i=0 to n) and a subsequencer 51-i, and the BIST circuit 3 includes plural sets.
A starter sequencer 50-i is triggered to start operation by a selection signal SENi outputted from the BIST control circuit 30. The sequence enable signal SENi can be regarded as a signal corresponding to a sequence command given from the BIST control circuit 30. The starter sequencer 50-i functions as a state machine that controls state transition, and the state is caused to transition by an IDLEi signal sent from a subsequencer 51-i corresponding to the signal SENi. According to the state, the starter sequencer 50-i outputs the signals SRUNi, SIDLEi, and SENDi. A subsequencer 51-i is also a state machine that controls state transition, and the state is caused to transition by the signals SRUNi and SIDLEi. According to the state, the subsequencer 51-i outputs a 16-bit control signal. The 16-bit control signal is supplied from a 16-bit bus 53 to subsequent stages through a tri-state buffer 52-i. The tri-state buffer 52 is put into a high power impedance state by the signal SENDi being put into a high level. The signal SENDi is put into a high level when the starter sequencer 50-i is in an idle state or wait state, that is, when control of the pattern generating circuit 33 is substantially stopped. As a result, only the output of a test sequencer 31 selected to operate is supplied to the bus 53. Control wirings do not need to be routed for each of the test sequencers 31. To suppress a floating state of the bus 53 when the operation of all the test sequencers 31 is stopped, a tri-state buffer 54 is provided to forcibly put the bus 53 into a low level by a logical product signal ANDSEND of all signals SEND0 to SENDn.
FIG. 8 shows the state of a starter sequencer 50-i and the state of a tri-state buffer 52-i. The tri-state buffer 52-i is put into a high power impedance state when the starter sequencer 50-i is in an idle state or wait state, that is, when control of the pattern generating circuit 33 is substantially stopped.
FIG. 9 shows a state transition diagram of starter sequencer 50-i. Among states are IDLE, SRUN, SBUSY, and SWAIT. SEN(/SEN) and IDLE are shown as trigger signals for state transition. Suffix i is omitted in FIG. 9.
FIG. 10 shows a logical configuration of a state machine 55 of starter sequencer 50-i. The state machine 55 is configured by a 2-bit Johnson counter consisting of QS0 and QS1.
FIG. 11 shows a decoding part 56 for the 2 bits QS0 and QS1 of the state machine 55. The decoding part 56 outputs the signals SIDLE, SRUN, and SEND. 2-bit values (00, 10, 11, 01) shown in the individual states of FIG. 9 denote the values of QS0 and QS1 (QS<0:1>) in the states.
Any of the starter sequencers 50-i has the same logical configuration. The logical configurations of the subsequencers 51-i are individualized depending on the mode of test operation. As one of the logical configurations of the subsequencers 51-i, single bank read/write (SB-Write/Read) will be described in detail.
FIG. 12 shows a timing sequence of SB-Write/Read. In a write operation, ACT, WRIT, NOP, NOP, NOP, and PRE are executed in that order. In a read operation, ACT, READ, NOP, NOP, NOP, and PRE are executed in that order. In the PRE, the X address counter is forcibly incremented. This is done to perform writing or reading for the next address.
FIG. 13 shows state transition (timing state transition diagram) of subsequencer associated with SB-Write/Read. The timing sequence of FIG. 12 is achieved. W/R denotes WRITE or READ. CO(Y) denotes carry output of Y counter YCUNT42. The precharge (PRE) state is switched to the idle state (IDLE) by the carry output because, during a single bank operation, bank addresses are updated after one round of X addresses, Y addresses are updated after one round of bank addresses, and a test terminates after one round of Y addresses.
FIG. 14 shows a state transition diagram of a general-purpose timer of the subsequencer. A general-purpose timer is adopted to prevent an increase in the logical size of the sequencers no matter how small or large the number of consecutive NOPs is. The states of the general-purpose timer can be caused to transition from C0 to C7 at maximum by a timer call signal TIMER. Each of the states C1 to C7 corresponds to one NOP.
FIG. 15 shows a logical configuration of a general-purpose timer 57. The general-purpose timer 57 is configured with a 3-bit binary counter. The 3 bits QT0 to QT2 of the binary counter are decoded into an 8-bit signal C<7:0>. When the timer call signal TIMER is put into a low level, a count operation is halted, and when put into a high level, the count operation is started.
FIG. 16 shows a logical configuration of a state machine 58 of a subsequencer. The state machine 58 is configured by a 3-bit Johnson counter consisting of QC0, QC1, and QC2.
FIG. 17 shows a decoding part 59 for the 3 bits QC0, QC1, and QC2 of the state machine 58. The decoding part 59 outputs the signals IDLE, ACT, WRIT, READ, TIMER, and PRE. IDLE, ACT, WRIT, READ, and PRE are supplied to the command encoder 39. TIMER is supplied to a general-purpose timer 57. MWRT is a write mode signal given by the BIST control circuit 30 as a result of decoding a test command. 3-bit values (000, 100, 110, 111, 011, 001) shown in the individual states of FIG. 13 denote the values of QC0, QC1, and QC2 (QC<0:2>) in the states.
FIG. 18 shows examples of timing sequences achieved by other plural test sequencers 31. MB (Multi Bank)-Write/Read sequence is shown. In this sequence, write or read is repeated plural times. Suffixes 0 to 3 denote memory bank names. In WRIT3, WRIT0, WRIT1, WRIT2, READ3, READ0, READ1, and READ2, the bank address counter 41 is forcibly incremented. This is done to alternately switch among memory banks.
SB (Single Bank)-R/W sequence is shown. In this sequence, read and write are performed. In PRE, the X address counter 40 is forcibly incremented. This is done to successively select X addresses for processing.
PR (Pseudo Random)-MB (Multi Bank) sequence is shown. Suffixes a, b, c, and d denote memory bank names 0 to 3, respectively.
SB-ROR (RAS Only Refresh) sequence is shown. In NOP, the bank address counter 41 is forcibly incremented. This is done to perform RAS only refresh by changing a memory bank. In FIG. 22, MB-ROR (RAS Only Refresh) 2 sequence is shown. Suffixes 0 to 3 denote memory bank names.
REF2 sequence is shown. NOP is repeated 15 times. Repeat counts are managed using the general-purpose timer 57 as previously described.
PAGE-Write/Read sequence is shown. In this sequence, page writing is performed in a word line unit by repeating WRIT, or page reading is performed in a word line unit by repeating READ. Therefore, in WRIT and READ, the Y address counter 42 is forcibly incremented. In NOP, the X address counter 40 is incremented. This is done to proceed to processing for the next page.
FIG. 19 shows a timing generation operation of the test sequencers 31. In this example, as subsequencer 51i, the SB-Write/Read timing sequence of FIG. 12 is performed.
As mentioned above, the BIST circuit 3 adopts plural test sequencers 31 to generate test timing. By providing plural test sequencers 31 different from each other, the BIST circuit 3 can meet a variety of test timings. Thereby, in comparison with ALPG requiring a memory for program storage, a logical size and a chip occupation area can be reduced. Since specific test sequencers 31 are mounted, the test sequencers to be mounted can be easily customized by product and product kind, and area overhead can be further reduced. Since timing output of each test sequencer 31, that is, output of subsequencer 51i is selected by the tri-state buffer 52i before being supplied to the bus 53, the number of wirings of sequencer output can be reduced more greatly than in the AND-OR multiplexer system.
<Write Data Generating Circuit>
FIG. 20 shows an example of the write data generating circuit 36. Noting the periodicity of test pattern data, the write data generating circuit 36 is configured so as to generate write data PD for test in plural modes by use of a shift register having a feedback loop. The shift register consists of latches QW3 to QW0 of four stages (4 bits) connected in series as plural bits of storage stages. A first feedback loop 61 is provided in which the output of a first latch QW0 of output side is fed back to the input of a last latch QW3 of output side. A selector 62 (first selector) that selects between the output of latch QW1 and the output of latch QW0 is disposed between the latches QW1 and QW0. A selector 63 that selects between the output of latch QW3 and the output of latch QW0 is disposed between the latches QW3 and QW2. Furthermore, a selector 64 (second selector) that selects between the output and input of latch QW0 is disposed. SD, TRC, and PCB, which are selection signals of the selectors 62, 63, and 64, respectively, are outputted from the BIST control circuit 30. Here, input selected by a logical value of the selection signals is as shown in the figure. For example, when SD=1, the output of QW0 is selected, and when SD=0, the output of QW1 is selected. The clock terminals of the latches QW3 to QW0 are supplied with an X address transition clock TX that synchronizes with change in X address, or a Y address transition clock TY signal that synchronizes with change in Y address. Which of the transition clock signals TX and TY is used is controlled dynamically by the test sequencers 31 according to the addressing mode.
FIG. 21 shows operation modes of the write data generating circuit 36 by equivalent circuits. When write data PD for test with 0 or 1 in all bits is to be generated, the output of the latch QW0 has to be fed back to its input as in (a). This is equivalent to a shift register operation of one cycle per round. When write data PD for test is to be generated at a 4-bit cycle, the output of the latch QW0 has to be fed back to the input of the latch QW3 as in (b). This is equivalent to a shift register operation of four cycles per round. When write data PD for test is to be generated at a 3-bit cycle, the output of the latch QW0 has to be fed back to the input of the latch QW2 as in (c). This is equivalent to a shift register operation of three cycles per round. When write data PD for test is to be generated by a so-called checker board, as in (d), the output of the latch QW0 has to be fed back to the input of the latch QW3, and the output of the latch QW0 and the output of the latch QW1 have to be outputted as data in an even Y address and data in an odd Y address, respectively.
FIG. 22 shows some concrete examples of generating write data by the write data generating circuit 36. In the figure, a symbol * means that an item concerned is undefined. (a) in FIG. 22 shows the operation of generating write data of all one bits or all zero bits by the write data generating circuit 36. The figure shows a memory cell array to which zero data has been written.
(b) in FIG. 22 shows an example of generating write data of single row/column stripe by the write data generating circuit 36. The generation operation is performed at a 4-bit cycle. The figure shows a memory cell array to which data of QW<3:0>=1010 has been written in single row stripe mode. TX is used for a transition clock. The transition clock TY is used for writing in single column stripe mode.
(c) in FIG. 22 shows an example of generating write data of double row/column stripe by the write data generating circuit 36. The generation operation is performed at a 4-bit cycle. The figure shows a memory cell array to which data of QW<3:0>=1100 has been written in double row stripe mode. TX is used for a transition clock. The transition clock TY is used for writing in double column stripe mode.
(d) in FIG. 22 shows an example of generating write data of checker board by the write data generating circuit 36. The generation operation is performed at a 4-bit cycle. The figure shows a memory cell array to which writing has been performed with checkerboard of QW<3:0>=1010. TX is used for a transition clock.
(e) in FIG. 22 shows an example of generating write data of 3-bit cycle by the write data generating circuit 36. The figure shows a memory cell array to which writing has been performed with QW<3:0>=*010. TX is used for a transition clock.
By adopting the write data generating circuit 36 of the above-mentioned shift register configuration, in comparison with general-purpose pattern generating circuits configured to selectively generate given patterns upon the loading of control data stored in ROM as typified by ALPG, write data of a variety of patterns can be easily generated on a comparatively small logical scale.
<Clock Generating Circuit>
FIG. 23 shows the clock generating circuit 32. The clock generating circuit 32 includes: a ring oscillator 70 capable of changing the number of gate stages of an oscillation loop; changeable frequency dividers 71 to 73 that frequency-divide the output of the ring oscillator 70; a frequency comparator 74 that compares predetermined output of the changeable frequency divider 72 with the frequency of an external clock signal CKEX; and a counter 75 for adjusting the number of stages that increments or decrements according to a comparison result by the frequency comparator 74. A count value KCNT of the counter 75 is used to select an oscillation loop of the ring oscillator 70 so as to match predetermined output of the changeable frequency divider 72 to the frequency of an external clock signal CKEX. The frequency comparator 74 and the counter 75 include an oscillation frequency control circuit that adjusts the number of gate stages of the oscillation loop based on the result of comparing an predetermined output of the changeable frequency divider 72 and the external clock signal CKEX.
The frequency divider 71 frequency-divides oscillation output CKRO of the ring oscillator 70 at a frequency division ratio of 20 to 2−7 to output eight kinds of clock signals CKD<7:0>. The frequency divider 72 inputs one clock signal selected from among the eight kinds of clock signals by a selector 76 and frequency-divides it at a frequency division ratio of 50 to 5−3 to output four kinds of clock signals CKD<11:8>. One of the four kinds of clock signals CKD<11:8> is selected by a selector 77 and supplied to the frequency comparator 74 as a clock signal CKC. The frequency divider 73 inputs one clock signal selected from among the 12 kinds of clock signals CKD<11:0> by a selector 78 and frequency-divides it at a frequency division ratio of 30 to 3−1 to output two kinds of clock signal CKDD<1:0>. One of the two kinds of clock signals CKDD<1:0> is selected by a selector 79 and outputted as the internal clock signal CKIN. KRC<2:0> and KRC<4:3> are selection control signals of the selectors 76 and 77, respectively. KRIN<3:0> and KRIN<4> are selection control signals of the selectors 78 and 79, respectively. The selection control signals KRC<4:0> and KRIN<4:0> are supplied from the BIST control circuit 30.
FIG. 24 shows the ring oscillator 70. The ring oscillator 70 shown in the figure variably adjusts the number of gate stages of an oscillation loop by 16 steps. The ring oscillator 70 has 16 delay gate units 80. The delay gate units 80 each include a three-input NAND gate NAND 81, and inverters 82 and 83 connected in series with the NAND 81. The NAND gate NAND81 admits PDU<i>, PDL<j>, and output of the inverter 83. Output of an inverter 83 of a delay gate unit 80 of a preceding stage is connected to input of an inverter 82 of a delay gate unit 80 of a following stage. In this way, an oscillation loop is formed by 16 stages of the delay gate units 80. Outputs of NAND gate NANDs 81 of delay gate units 80 of first four stages are inputted to a four-input NAND gate NAND 84. Outputs of NAND gate NANDs 81 of delay gate units 80 of next four stages are inputted to a four-input NAND gate NAND 85. Outputs of NAND gate NANDs 81 of delay gate units 80 of next four stages are inputted to a four-input NAND gate NAND 86. Outputs of NAND gate NANDs 81 of delay gate units 80 of last four stages are inputted to a four-input NAND gate NAND 87. Outputs of the NAND gates NAND 84 to NAND 87 are inputted to a four-input NAND gate NAND 92 through inverters 88, 89, 90, and 91. Output of the NAND gate NAND 92 is fed back to the first-stage delay gate unit 80 through a two-input NAND gate NAND 93. Output of a NAND gate NAND92 is inverted by an inverter 94 and supplied to the frequency divider 71 as a clock signal CKRO.
The count value KCNT consists of 4 bits (KCNT<3:0>) and decoded into control signals PDU<3:0> and PDL<3:0> by pre-decoders 95 and 96. The control signals PDU<3:0> and PDL<3:0> are supplied to the individual NAND gates NAND81 as PDU<i> and PDL<j> according to a predetermined decoding logic. One PDU<i> and one PDU<j> of the eight control signals PDU<3:0> and PDL<3:0> are put into a high level. One NAND gate 81 to which both PDU<i> and PDL<j> of a high level are supplied can form logic output conforming to an output of the inverter 82. The number of gate stages of the oscillation loop differs according to the position of the NAND gate 81 that can form the logic output. Thereby, oscillation frequencies of the ring oscillator 70 are made variable.
FIG. 25 shows the frequency comparator 74. The frequency comparator 74 includes: a pulse generating circuit 100 that outputs a single pulse signal each time the rising edge of the clock signal CKC as a reference signal appears; a pulse generating circuit 101 that outputs a single pulse signal each time the rising edge of the clock signal CKC as a feedback signal appears; a flipflop 102 of set/reset type; and flipflops 103 and 104 of edge-triggered type. In this circuit, when the reference signal CKEX falls, a single pulse signal is outputted from the pulse generating circuit 100 and serves as a clock signal of the flipflop 103. When the single pulse signal is generated, output 105 of the flipflop 102 is captured, and put into a low level a little later by the single pulse signal. When the feedback signal CKC falls, a single pulse signal is outputted from the pulse generating circuit 101. The single pulse signal serves as a clock signal of the flipflop 104. When the single pulse signal is generated, output 106 of the flipflop 102 is captured into the flipflop 104, and put into a low level a little later by the single pulse signal. Unless the falling reference signal CKEX and the falling feedback signal CKC appear at the same time, if one of 105 and 106 goes into a low level, the other goes into a high level. Even if they appear at the same time, a high level develops on the side where a single pulse disappears earlier, and a low level develops on the other side. Accordingly, after the reference signal CKEX and the feedback signal CKC become almost equal to each other in phase and frequency, since the falling reference signal CKEX and the falling feedback signal CKC appear alternately without fail almost every half cycle, a high level is captured in the flipflops 103 and 104 without fail. However, if one of the frequencies of the reference signal CKEX and the feedback signal CKC remains high, each time a phase difference of one cycle occurs, a single pulse appears twice in succession on the side of higher frequency and a low level is captured in the flipflop 103 or 104 of the side. This is outputted as signals UP and DOWN indicating that there is a difference in frequencies.
FIG. 26 shows operation waveforms of the frequency comparator 74. As shown in the part of operation waveform 110, if a low-level period of one of the waveforms of node signals 100A and 101A is contained in a low-level period of the other, output corresponding to the former goes into a high level. Since sensitivity becomes higher in either of the node signals 100A and 101A that has a smaller duty ratio of their waveforms, it is desirable to provide the pulse generating circuits 100 and 101 as shown in FIG. 25. From a different viewpoint, if the duties of the clock signals CKEX and CKC are small, the pulse generating circuits 100 and 101 are not required and may be omitted.
FIG. 27 shows clock generation operation timing by the clock generating circuit 32. As an example, a clock signal CKC is generated through CKD<2>, CKD<8>, and CKD<9>. In this example, at times t1, t2, and t3, KCNT is successively decremented, and CKIN increases gradually in frequency.
If the clock generating circuit 32 is adopted, the external clock signal CKEX may be a clock signal of a relatively low frequency such as operation frequencies supported by low-speed testers. If the frequency division ratio of the clock signal CKIN used as a test clock signal is smaller than that of the clock signal CKC inputted to the comparator 74, the frequency of the test clock signal CKIN can be made higher than the low-speed clock signal CKEX of the tester, contributing to speedup in tests. For example, a frequency hundreds of times as high as that of the external clock signal CKEX can be obtained. Here, since the ring oscillator 70 capable of changing the number of gate stages of an oscillation loop is used to generate a desired frequency, in comparison with PLL circuits, circuit scale can be significantly reduced at some cost of the accuracy of frequency synchronization, contributing to reduction in chip occupation area.
FIG. 28 shows a test flow of SDRAM. Non-defective SDRAM is obtained through wafer inspection, probe inspection, packaging, first selection by a high-speed tester, burn-in, second selection and third selection by a low-speed tester. In the second selection, low-speed function tests are performed at low and high temperatures. In the third selection, a data retention test is performed for almost one-third the period. Accordingly, use of the low-speed tester is desirable to reduce test costs. In other tests, since a BIST circuit is used, use of the low-speed tester will not result in significant increase in test time. Simple function tests and simple data retention tests, which are performed in the first high-speed selection, may be achieved using a low-speed tester and a BIST circuit on a chip.
Here, a description will be made of cost reduction effects when tests by use of a high-speed tester are replaced by tests by use of a low-speed tester and the BIST circuit 3 on the chip. For example, in the case where the BIST circuit is added to DDR-SDRAM, if it is estimated that circuit elements increase by 5590 NAND gates and wiring areas increase by 20 areas, with 1.3 μm process, the former increases the area by 0.56 mm2 and the latter increases the area by 0.40 mm2, thereby bringing an estimated increase in manufacturing costs into about 15 yen. It is estimated that test time is reduced by about 2000 seconds by building in the BIST circuit 3. If test cost is 0.05 yen per second, building in the BIST circuit 3 on the chip would reduce costs by about 85 yen per chip.
Hereinbefore, though the invention made by the inventors of the present invention has been described in detail based on the preferred embodiments, it goes without saying that the present invention is not limited to the preferred embodiments, but may be modified in various ways without changing the main purports of the present invention.
For example, the number of memory banks may be changed as required without being limited to 4. The addressing modes are not limited to those shown in FIG. 5, and the write data generation patterns are not limited to those shown in FIG. 21. The memory, without being limited to SDRAM, may be SRAM, MRAM, FeRAM, flash memory, and other ROMs. The memory may be a multiport memory without being limited to a single port memory. Furthermore, the present invention may also apply to an associative memory. Also, the present invention may apply to not only memory LSI but liquid crystal drive circuits equipped with memory, and semiconductor integrated circuits such as graphic control devices and microcomputers.
Patent Application
20090063913
