The present invention relates to a semiconductor manufacturing device such as a CVD device or etching device, etc., and a heating unit thereof, and more specifically, a semiconductor manufacturing device and a heating unit thereof in that inner wall faces of a processing chamber, a wafer transferring passage, and an exhaust pipe are heated.
In a semiconductor manufacturing device such as a CVD device or etching device, etc., a wafer is set inside a processing chamber and subjected to desired deposition and etching while vacuuming in a high-temperature atmosphere. In this process, both vapor phase and solid phase of a processing gas and reaction by-products flowing in the internal space are sublimated and changed, and in particular, when a vapor is changed into a solid, it adheres to the inner wall face as a deposit.
Therefore, in order to evenly apply desired deposition or etching to the wafer while preventing adhesion of unnecessary by-products, etc., to the inner wall face, the wall face temperature of the processing chamber or passage needs to be controlled.
As a conventional method for this, it is known that a cartridge-type heater is disposed together with thermo cement as a heat transfer medium in the outer region of the inner wall face that defines the processing chamber (for example, Japanese Published Unexamined Patent Publication No. 2003-27240).
However, according to the method in which a cartridge-type heater is disposed outside the processing chamber, the heater is locally disposed outside the processing chamber, and the distance from the heater to the wall face of the processing chamber differs depending on the location, so that the inner wall face cannot be evenly heated. In addition, between the heater and the wall face, although a heat transfer medium such as thermo cement is interposed, the heating efficiency is lower than in the case of direct heating, the temperature rising time is long until the temperature reaches a predetermined temperature by heating of the heater, and this results in reduction in the operating time. Furthermore, in actuality, the inner wall face is periodically cleaned to remove by-products adhering to the inner wall face.
In the exhaust pipe or the like joined to the downstream side of the processing chamber, in order to prevent adhesion of by-products or make by-products to locally adhere to the inner wall face inside the duct, a method in which a part of the exhaust pipe is heated from the outside by a heater is known (for example, Japanese Published Unexamined Patent Publications No. 2003-37070 and No. H08-78300).
However, in the method in which a heater is provided outside the exhaust pipe, a part of heat energy is radiated toward the outside of the exhaust pipe, so that the energy efficiency for heating the inner wall face of the exhaust pipe to be contacted by an exhaust gas or the like to a predetermined temperature is poor, and results in an increase in power consumption.
Furthermore, as another method, it is known that a heater is provided in a zigzag manner on the inner wall of the piping of the exhaust pipe, etc., a lead wire of the heater is extracted to the outside from a port provided at the middle portion of the piping, and power is supplied to the heater via this lead wire, whereby the inside of the pipe is heated all around (for example, Japanese Published Unexamined Patent Publication NO. H11-108283).
However, in this method, the port for the lead wire is positioned at the middle of the piping, so that it is difficult to insert the lead wire into the port when the heater is attached, resulting in poor operability.
In addition, since the heater is disposed while being exposed inside the piping, it is worn out due to reaction with a gas or chemical reacting substances that have chemically reacted flowing inside the piping, and in particular, a cleaning gas of NF3 or ClF3, etc., that is periodically flowed for removing deposits inside the piping promotes wear of the heater and shortens the life of the heater.
Furthermore, although the heater disposed in a zigzag manner heats all around the piping, only local heating of the vicinity of the heater causes heating temperature unevenness, and by-products are sublimated and easily deposited in a region in that the heat is hardly transmitted.
The present invention has been made in view of the above-described circumstances, and it is an object of the present invention to minimize adhesion of by-products to the inner wall face of the duct or processing chamber, etc., exposed to a processing gas or the like in a semiconductor manufacturing device or the like, thereby providing a semiconductor manufacturing device and a heating unit thereof which improve the yield of wafers to be processed, increase the operating time, and reduce power consumption by improving the energy efficiency.
The semiconductor manufacturing device according to the present invention to achieve the above-described object includes a processing chamber for applying a predetermined process, a supply passage for supplying a processing gas to the inside of the processing chamber, a transferring passage through which a wafer is put in and taken out of the processing chamber, an exhaust passage for exhausting the processing gas inside the processing chamber, and a sheet-like heating unit formed so as to cover a thin plate-shaped resistive heating element by sandwiching it by a pair of metal plates and cover the inner wall face from the inner side to heat the inner wall face of at least one of the supply passage, the transferring passage, the processing chamber, and the exhaust passage.
According to this construction, by disposing the sheet-like heating unit adjacent to the inner wall face and demarcating a wall face to be exposed to a processing gas, the wall face to be exposed to the processing gas is directly heated, and this improves the heating efficiency and energy efficiency, shortens the heat rising time, reduces power consumption, improves the operating efficiency, and prevents or minimizes adhesion of by-products. In addition, since the resistive heating element of the heating unit is sandwiched and covered by a pair of metal plates, it is prevented from being directly exposed to the processing gas, whereby deterioration and wearing thereof are prevented and predetermined heating performance can be maintained.
Thereby, improvement in the yield of wafers to be processed by the semiconductor manufacturing device, an increase in the operating time, and reduction in power consumption are realized.
In the above-described construction, the heating unit can be constructed so as to include a heating main body to be disposed adjacent to the inner wall face, an attaching portion formed into a flange shape integrally with the heating main body or to extend from the heating main body, and a connector provided at the attaching portion so as to draw-out a wiring for supplying electricity to the resistive heating element and a wiring of a temperature sensor that detects the temperature of the resistive heating element.
According to this construction, when the heating unit is attached to a predetermined heating region (inner wall face), the heating main body is set along the inside of the inner wall face and the attaching portion that is formed into a flange shape or to extend is fixed to a predetermined attaching position, whereby the attaching operation can be easily performed. In addition, since the connector is formed integrally with the attaching portion of the heating unit, it is easily handled and exposed to the outside of the device, whereby an operator is relieved from troublesomeness in connecting in the vacuum atmosphere and can easily connect the wiring after attaching.
In the above-described construction, it is possible that the piping defining the exhaust passage is formed of a plurality of pipes formed to be detachable and joined to each other, and the plurality of pipes have sword guard-shaped flange portions that project outward radially and face each other, and the attaching portion of the heating unit is sandwiched by the flange portions adjacent to each other via a sealing member.
According to this construction, the heating main body of the heating unit is inserted inside the respective pipes and the attaching portion of the heating unit is sandwiched between flange portions of the adjacent pipes via a sealing member and the adjacent pipes are joined to each other, whereby the heating unit can be attached to the piping, and it can be removed by reverse procedures.
In the above-described construction, it is possible that a clamp mechanism for joining the flange portions of the plurality of pipes to each other is provided, and this clamp mechanism includes a plurality of clamp blocks having grooves with roughly V-shaped sections for receiving the flange portions so as to press these closer to each other, a plurality of link plates for linking the plurality of clamp blocks, fastening members that fasten the adjacent two clamp blocks.
According to this construction, since the clamp mechanism is formed into a chain shape, the clamp blocks are wound around the flange portions of the pipes and fastened by the fastening members, whereby the pipes attached with the heating unit can be easily joined to each other and released from each other.
In the above-described construction, it is possible that the plurality of link plates include a plurality of first link plates that link one side portions of the clamp blocks to each other and a plurality of second link plates that links the other side portions of the clamp blocks to each other, wherein at least one link plate of the first link plates and the second link plates can be latched on and released from the clamp blocks.
According to this construction, when a wiring is connected to the attaching portion (or connector) of the heating unit, the wiring is inserted while the releasable link plates are released in advance, and then, the link plates are latched on the clamp blocks, whereby the heating unit can be easily assembled even when the wiring is connected.
The heating unit of the semiconductor manufacturing device of the present invention for achieving the above-mentioned object heats the inner wall face of any of a processing chamber for applying a predetermined process, a transferring passage through which a wafer is put in and taken out of the processing chamber, and an exhaust passage for exhausting a processing gas inside the processing chamber, and includes a thin plate-shaped resistive heating element and a pair of metal plates that covers the resistive heating element by sandwiching it and demarcates the processing chamber or passages so as to cover the inner wall face like a sheet from the inner side.
According to this construction, by disposing the heating unit adjacent to the inner wall face and demarcating the wall face to be exposed to the processing gas, the wall face to be exposed to the processing gas is directly heated, the heating efficiency and energy efficiency are improved, the temperature rising time can be shortened, power consumption can be reduced, the operating efficiency can be improved, and adhesion of by-products can be prevented or minimized. The sheet-like resistive heating element of the heating unit is sandwiched and covered by a pair of metal plates, so that it is prevented from being directly exposed to the processing gas, and deterioration and wearing thereof can be prevented, and predetermined heating performance can be maintained over a long period of time.
In the above-described construction, it is possible that the heating unit includes a heating main body to be disposed adjacent to the inner wall face, an attaching portion formed into a flange shape integrally with the heating main body or formed to extend from the heating main body, and a connector that is provided at the attaching portion to draw-out a wiring for supplying electricity to the resistive heating element and a wiring of a temperature sensor that detects the temperature of the resistive heating element.
According to this construction, when the heating unit is attached to a predetermined heating region (inner wall face), the heating main body is set along the inside of the inner wall face and the attaching portion formed into a flange shape or extended is fixed to a predetermined attaching position, whereby the attaching operation can be easily performed. In addition, the connector is formed integrally with the attaching portion of the heating unit, so that handling is easy and the unit can be exposed to the outside of the device, whereby the operator is relieved from troublesomeness in connecting in the vacuum atmosphere and easily performs wiring connecting operations after attaching.
In the above-described construction, it is possible that the heating unit includes a chamber heating unit to be disposed adjacent to the inner wall face of the processing chamber, and the chamber heating unit includes a cylindrical heating main body to be disposed adjacent to the side wall face of the processing chamber and an attaching portion provided in a flange shape at the end thereof, and a disk-shaped heating main body to be disposed opposite the bottom wall face of the processing chamber and an attaching portion provided to extend on the lower surface of the heating main body.
According to this construction, since the inner wall faces (side wall face and bottom wall face) of the processing chamber are all covered by a sheet-like heating unit, as well as realizing efficient heating and preventing or minimizing adhesion of by-products, when the chamber heating unit is attached, the disk-shaped heating main body is inserted into the processing chamber and the extending attaching portion is made to project from the lower side of the device, and the disk-shaped heating main body is inserted into the processing chamber and the flange-shaped attaching portion thereof is placed on the upper end of the device, so that the heating unit can be easily attached and detached.
In the above-described construction, it is possible that the heating unit includes a chamber heating unit to be disposed adjacent to the inner wall face of the processing chamber and the chamber heating unit includes a cylindrical heating main body having a bottom wall and an attaching portion provided in a flange shape at the opening end of the heating main body.
According to this construction, as well as efficiently heating the inner wall face of the processing chamber and preventing or minimizing adhesion of by-products, when attaching the chamber heating unit, only by inserting the bottomed cylindrical heating main body into the processing chamber and placing the flange-shaped attaching portion on the upper end of the device, all inner wall faces (side wall face and bottom wall face) of the processing chamber are covered with the sheet-like heating unit, so that the heating unit can be easily attached and detached, and by integrally forming the cylindrical heating main body and the disk-shaped heating main body, the number of parts can be reduced.
In the above-described construction, it is possible that the heating unit includes a transferring passage heating unit to be disposed adjacent to the inner wall face of the transferring passage, and the transferring passage heating unit includes a cylindrical heating main body having a roughly rectangular section and an attaching portion provided in a flange shape on the heating main body.
According to this construction, as well as realizing efficient heating of the inner wall face of the transferring passage and preventing or minimizing adhesion of by-products, when attaching the transferring passage heating unit, the cylindrical heating main body is inserted into the transferring passage and the flange-shaped attaching portion is joined to the outer wall face of the device, whereby the heating unit can be easily attached and detached.
In the above-described construction, it is possible that the heating unit includes an exhaust passage heating unit to be disposed adjacent to the inner wall face of the exhaust passage, and the exhaust passage heating unit includes a cylindrical heating main body and an attaching portion provided in a flange shape on the heating main body.
According to this construction, as well as realizing efficient heating of the inner wall face of the exhaust passage and preventing or minimizing adhesion of by-products, when attaching the exhaust passage heating unit, the cylindrical heating main body is inserted into the exhaust passage and the flange-shaped attaching portion is joined to the end of the piping, whereby the unit can be easily attached and detached.
In the above-described construction, it is possible that the heating unit includes an exhaust passage heating unit to be disposed adjacent to the inner wall face of a curved exhaust passage, and the exhaust passage heating unit includes a curved cylindrical heating main body and an attaching portion provided in a flange shape on the heating main body, and the heating main body is formed so as to generate a greater heating value to the outside region of the curved exhaust passage than to the inside region.
According to this construction, at the curved exhaust passage, by-products more easily deposit in the outside region than in the inside region, and the deposit and growth of the by-products in this region can be effectively prevented.
In the above-described construction, it is possible that the heating unit can be disposed by leaving a heat insulating space between it and the inner wall face.
According to this construction, since a vapor phase is formed between the heating unit (heating main body) and the inner wall face, the vapor phase increases the heat insulating effect, whereby the heating efficiency on the wall face to be exposed to the processing gas can be further increased.
In the above-described construction, it is possible that the pair of metal plates are formed of any material of stainless steel, titanium, an aluminum alloy, and a nickel-cobalt alloy, and the resistive heating element is formed of any of a polyimide heater, a silicon rubber heater, a mica heater, and a sheath heater.
According to this construction, the heating unit can be finished into a thin plate shape (sheet shape) that is comparatively easily machined while maintaining high resistance to corrosion and high heat conductivity, so that the heating unit can be easily formed according to the shape of the wall face of the processing chamber and the wall faces of the passages.
Hereinafter, best modes of the present invention are described with reference to the accompanying drawings.
A semiconductor manufacturing device (CVD device) having the heating unit according to the present invention includes, as shown in
The main body 10 has a processing chamber 11 forming a cylindrical space for housing a semiconductor wafer and applying predetermined processes, a transferring passage 12 with a roughly rectangular section for putting in and taking out wafers of the processing chamber 11, an roughly cylindrical exhaust passage 13 for exhausting a processing gas inside the processing chamber, and a susceptor 14 on which wafers are placed inside the processing chamber 11. The susceptor 14 is driven vertically by a drive mechanism 14a that is detachably linked, and is insulated from the outside by the cover member 14b and is vacuum-sealed.
The cover 20 has a shower head 21 that demarcates a supply passage for supplying a processing gas to the inside of the processing chamber 11, and an O-ring 22 as a sealing member, and so on.
In addition, in the main body 10, as a heating unit, two chamber heating units 50 and 60 for heating the inner wall face of the processing chamber 11, an exhaust passage heating unit 70 for heating the inner wall face of the exhaust passage 13, a transferring passage heating unit 80 for heating the inner wall face of the transferring passage 12, and so on are provided.
The main body 10 is formed of, as shown in
The chamber heating unit 50 is formed of, as shown in
The heating main body 51 is formed of thin and cylindrical inner shell 51a and outer shell 51b as a pair of metal plates, a thin plate-shaped resistive heating element 51c sandwiched and covered between the both shells 51a and 51b, a spacer 51d that joins the edges of the both shells 51a and 51b and seals up the resistive heating element 51c, and so on.
The spacer 51d is provided at the edges (edges of the lower end opening 50b, the rectangular opening 50c, and the circular opening 50d) in regions to be exposed to a processing gas in the edges of the both shells 51a and 51b to completely prevent the resistive heating element 51c from being exposed to the processing gas or the like.
The attaching portion 52 is formed of a flange 52a joined to the inner shell 51a and a flange 52b joined to the outer shell 51b, and between the both flanges 52a and 52b, a conducting lead 51c′ connected to the resistive heating element 51c and a lead 51c″ of a thermocouple as a temperature sensor for measuring the temperature of the resistive heating element 51c are sandwiched and drawn to the connector 53. Namely, the flanges 52a and 52b are not completely sealed up but are opened to the outside. At the connector 53, a power supply cable 90 is connected to the lead 51c′, and a cable 91 to be connected to a measuring instrument is connected to the lead 51c″.
Herein, in order to increase the heat transfer efficiency, the inner shell 51a and the outer shell 51b are formed of a material that has a plate thickness of approximately 0.5 mm and has corrosion resistance to the processing gas. As this material, for example, stainless steel, titanium, aluminum alloy, nickel-cobalt alloy, or ceramics made of any of aluminum oxide, silicon carbide, aluminum nitride, silicon nitride, and silicon oxide is preferably used. It is also possible that corrosion resistance is obtained by coating, and in this case, as a coating material, alumina(Al2O3), SiC, AlN, Si3N4 or the like is preferable. In addition, the same material can be used for the flanges 52a and 52b. Furthermore, by smoothing the surfaces of the shells 51a and 51b to be exposed to a high temperature, more desirably, finishing the surfaces to a surface roughness level of Ra≦0.1, even if by-products are deposited, the deposited by-products can be easily removed during maintenance.
The resistive heating element 51c is formed of, as shown in
Herein, the insulating film 501 is made of a resin material such as a polyimide resin excellent in heat resistance, and the heat conducting foil 503 is formed of a metal foil of stainless steel or the like having a thickness of approximately 50 μm.
Herein, as the resistive heating element 51c, a polyimide heater using a polyimide film is employed, however, other than this, a silicon rubber heater, a mica heater, a sheath heater, or the like can be employed. Thus, by using a flexible thin-film resistive heating element, it can be formed into various shapes corresponding to the inner wall faces.
The chamber heating unit 50 is constructed so that, as shown in
Thus, by providing the attaching portion 52 on the heating main body 51, the attaching and detaching operations can be easily performed, and between the heating main body 51 and the inner wall face 11a, a space (vapor phase) is left, whereby the attaching and detaching operations become easier and the heat transmitted to the outside from the heating main body 51 is reduced and the heating efficiency by the heating main body 51 further increases.
The chamber heating unit 60 is formed of, as shown in
The heating main body 61 is formed of, as shown in
The attaching portion 62 is formed of a straight pipe 62a joined to the outer shell 61b, and through the straight pipe 62a, a conducting lead 61c′ connected to the resistive heating element 61c and a lead 61c″ of a thermocouple as a temperature sensor for measuring the temperature of the resistive heating element 61c are inserted and drawn to the connector 63. Then, at the connector 63, a power supply cable 90 is connected to the lead 61c′, and a cable 91 to be connected to a measuring instrument is connected to the lead 61c″.
As the inner shell 61a, the outer shell 61b, and the resistive heating element 61c, the same constructions and materials as those in the aforementioned chamber heating unit 50 are applied.
As shown in
As the heat insulating member 65, one made of alumina ceramics (Al2O3) is employed.
Thus, by providing the attaching portion 62 in the heating main body 61, the attaching and detaching operations can be easily performed, and by leaving a space (vapor phase) and providing the heat insulating member 65 between the heating main body 61 and the inner wall face 11b, the heat transmitted from the heating main body 61 to the outside is reduced and the heating efficiency by the heating main body 61 further increases.
Namely, this chamber heating unit 50′ is formed of, as shown in
The heating main body 51′ is formed of bottomed thin cylindrical inner shell 51a′ and outer shell 51b′ as a pair of metal plates, a thin-plate resistive heating element 51c′ sandwiched and covered between the shells 51a′ and 51b′, a spacer 51d′ that join the edges of the shells 51a′ and 51b′ and seals up the resistive heating element 51c′, and so on.
The spacer 51d′ is provided at the edges (edges of the central opening 50b′, the rectangular opening 50c, and the circular opening 50d) in the regions to be exposed to a processing gas in the edges of the shells 51a′ and 51b′ to completely prevent the resistive heating element 51c′ from being exposed to the processing gas or the like.
In this chamber heating unit 50′, the above-described chamber heating units 50 and 60 are formed integrally, so that as well as realizing efficient heating of the inner wall faces of the processing chamber 11 and preventing or minimizing adhesion of the by-products, the number of parts is reduced and the attaching and detaching operations are further simplified.
The exhaust passage heating unit 70 is formed of, as shown in
The heating main body 71 is formed of cylindrical thin inner shell 71a and outer shell 71b as a pair of metal plates, a thin plate resistive heating element 71c sandwiched and covered between the shells 71a and 71b, and a spacer 71d that joins the edges of the shells 71a and 71b and seals up the resistive heating element 71c.
The spacer 71d is provided at the edges (edges of the openings 70a and 70b) in the regions to be exposed to the processing gas in the edges of the shells 71a ad 71b to completely prevent the resistive heating element 71c from being exposed to the processing gas or the like.
The attaching portion 72 is formed of flanges 72a and 72b joined to the outer shell 71b, and between the flanges 72a and 72b, a conducting lead 71c′ connected to the resistive heating element 71c and a lead 71c″ of a thermocouple as a temperature sensor for measuring the temperature of the resistive heating element 71c are sandwiched and drawn to the connector 73. Namely, the flanges 72a and 72b are not completely sealed up but are opened to the outside. At the connector 73, a power supply cable 90 is connected to the lead 71c′ and a cable 91 to be connected to the measuring instrument is connected to the lead 71c″.
As the inner shell 71a, the outer shell 71b, the flanges 72a and 72b, and the resistive heating element 71c, the same constructions and materials as those in the aforementioned chamber heating unit 50 are applied.
As shown in
Thus, by providing the heating main body 71 with the attaching portion 72, the attaching and detaching operations can be easily performed, and by leaving a space (vapor phase) between the heating main body 71 and the inner wall face 13a, the attaching and detaching operations become easier and the heat transmitted from the heating main body 71 to the outside is reduced and this increases the heating efficiency of the heating main body 71.
Herein, the exhaust passage heating unit 70 is disposed at the upstream side of the turbo molecular pump, however, in the entire region of the exhaust line 40, for example, a similar sheet-like heating unit that is changed in shape as appropriate like an elbow pipe type or a straight pipe type, can be disposed.
The transferring passage heating unit 80 is formed of, as shown in
The heating main body 81 is formed of thin and rectangular cylindrical inner shell 81a and outer shell 81b as a pair of metal plates, a thin plate resistive heating element 81c sandwiched and covered between the shells 81a and 81b, and a spacer 81d that joins the edges of the shells 81a and 81b and seals up the resistive heating element 81c.
The spacer 81d is provided at the edges (edges of the openings 80a and 80b) in the regions to be exposed to the processing gas in the edges of the shells 81a and 81b, and completely prevents the resistive heating element 81c from being exposed to the processing gas or the like.
The attaching portion 82 is formed of flanges 82a and 82b joined to the outer shell 81b, and between the flanges 82a and 82b, a conducting lead 81c′ connected to the resistive heating element 81c and a lead 81c″ of a thermocouple as a temperature sensor for measuring the temperature of the resistive heating element 81c are sandwiched and drawn to the connector 83. Namely, flanges 82a and 82b are not completely sealed up but are opened to the outside. Then, at the connector 83, a power supply cable 90 is connected to the lead 81c′ and a cable 91 to be connected to the measuring instrument is connected to the lead 81c″.
As the inner shell 81a, the outer shell 81b, the flanges 82a and 82b, and the resistive heating element 81c, the same constructions and materials as those in the aforementioned chamber heating unit 50 are applied.
As shown in
Thus, by providing the heating main body 81 with the attaching portion 82, the attaching and detaching operations can be easily performed, a space (vapor phase) is left between the heating main body 81 and the inner wall face 12a, whereby the attaching and detaching operations become easier and the heat transmitted from the heating main body 81 to the outside is reduced and the heating efficiency of the heating main body 81 increases.
Next, attaching procedures of the chamber heating units 50 and 60, the exhaust passage heating unit 70, and the transferring passage heating unit 80 are described briefly.
First, the susceptor 14 is removed by opening the cover 20. Then, the chamber heating unit 60 is inserted into the processing chamber 11 and disposed in the bottom region.
Subsequently, the heating main body 51 of the chamber heating unit 50 is inserted to the inside of the processing chamber 11 and the attaching portion 52 is placed on the upper face 15.
Subsequently, while the transferring chamber is opened, the heating main body 81 of the transferring passage heating unit 80 is inserted into the transferring passage 12 and the front end thereof (rectangular opening 80a) is fitted into the opening 50c of the heating main body 51, and the attaching portion 82 is joined to the outer wall face 19 and is fixed by a fixing plate 88.
Subsequently, while removing the exhaust line 40, the heating main body 71 of the exhaust passage heating unit 70 is inserted into the exhaust passage 13 and the front end (opening 70a) is fitted into the circular opening 50d of the heating main body 51, and the attaching portion 72 is joined to the outer wall face 19 and is fixed by a fixing plate 78. Thereby, the heating units 50, 60, 70, and 80 are completely attached. On the other hand, the detaching operations are performed according to the reverse procedures.
Since all heating units 50, 60, 70, and 80 are thus smoothly attached and detached, even when a part needs to be replaced upon stopping the device, the stop period can be minimized and the operating time can be increased.
When the chamber heating unit 50′ is used in place of the chamber heating units 50 and 60, the attaching operation and the detaching operation are further simplified.
This exhaust line 40′ includes a plurality of exhaust pipes (piping) 410 and 420 that are formed to be attachable and detachable and joined to each other as shown in
The exhaust pipe 410 has a straight cylinder part 411 that demarcates a straight exhaust passage and flange portions 412 formed into a sword guard shape while projecting outward radially at the connection ends of the straight cylinder part 411. The exhaust pipe 420 has a curved cylinder part 421 that demarcates a curved exhaust passage and flanges 422 formed into a sword guard shape projecting outward radially at the connection ends of the curved cylinder part 421.
Herein, the flange portions 412 and 412 and the flange portions 412 and 422 are formed to face each other in the connecting direction as shown in
The clamp mechanism 300 includes, as shown in
One link plate 303′ of the plurality of link plates 303 has, as shown in
While the attaching portion 172 or 272 described later of the exhaust passage heating unit 170 or 270 is sandwiched between the flange portions 412 and 412 or the flange portions 412 and 422 via the O-rings 200, the clamp mechanism 300 is wound around the outer circumference of the flange portions 412 and 412 or 412 and 422 and the bolt 304 is screwed, whereby the exhaust pipes 410 and 410 or 410 and 420 are joined to each other.
Thus, the clamp mechanism 300 is formed into a chain shape, so that the exhaust pipes 410 and 410 or 410 and 420 attached with the exhaust passage heating unit 170 or 270 can be easily joined and the joint can be easily released.
Particularly, since at least one link plate 303′ can be latched on and released from the clamp block 301, when the connector 173 or 273 formed at the attaching portion 172 or 272 of the exhaust passage heating unit 170 or 270 is comparatively long or the cable 90 or 91 is connected thereto, the releasable link plate 303′ is released in advance and the connector 173 or 273 or the cable 90 or 91 is inserted, and then the link plate 303′ is latched on the clamp block 301, whereby the exhaust passage heating unit 170 or 270 can be assembled easily.
The exhaust passage heating unit 170 is formed of, as shown in
The heating main body 171 is formed of thin and cylindrical inner shell 171a and outer shell 171b as a pair of metal plates, a thin plate resistive heating element 171c sandwiched and covered between the shells 171a and 171b, a spacer 171d that joins the edges of the shells 171a and 171b and seals up the resistive heating element 171c, and so on.
The spacer 171d is provided at edges in the regions exposed to the processing gas in the edges of the shells 171a and 171b to completely prevent the resistive heating element 171c from being exposed to the processing gas or the like.
The attaching portion 172 is formed of a flange 172a joined to the inner shell 171a and a flange 172b joined to the outer shell 171b, and between the flanges 172a and 172b, a conducting lead 171c′ connected to the resistive heating element 171c and a lead 171c″ of a thermocouple as a temperature sensor for measuring the temperature of the resistive heating element 171c are sandwiched and drawn to the connector 173. Namely, the flanges 172a and 172b are not completely sealed up but are opened to the outside. At the connector 173, a power supply cable 90 is connected to the lead 171c′ and a cable 91 to be connected to the measuring instrument is connected to the lead 171c″.
The outer shell 171b and the flange 172b are joined by welding (for example, TIG welding, plasma welding, laser welding, etc.) or brazing after they are formed separately from each other as shown in
The inner shell 171a and the flange 172a are formed separately from each other, and are then joined to each other by welding (for example, TIG welding, plasma welding, laser welding, etc.) or brazing or the like as shown in
As the inner shell 171a, the outer shell 171b, the flanges 172a and 172b, and the resistive heating element 171c, the same materials or the same constructions and materials as those in the aforementioned chamber heating unit 50 are applied.
As shown in
Herein, comparing the temperature rising characteristics and temperature lowering characteristics of the exhaust passage heating unit 170 and a conventional rubber heater, the results shown in
With respect to the temperature rising characteristics, as shown in
With respect to the temperature lowering characteristics, the time required until the inner wall face temperature of the exhaust pipe lowered from 150° C. to 80° C. was 420 seconds when using the exhaust passage heating unit 170 of the present invention although it was 540 seconds when using the conventional rubber heater as shown in
Furthermore, when the temperature distribution in the axial direction in the case where the exhaust passage heating unit 170 was attached to the exhaust pipe 410 was measured, the results shown in
As a result, as shown in
The temperature of the exhaust pipe 410 was raised to 130.8° C. when the temperature of the resistive heating element 171c was 150° C., and was raised to 173.3° C. when the temperature of the resistive heating element 171c was 200° C., and this temperature rise is at almost the same level as that of the temperature of the inner shell 171a.
The exhaust passage heating unit 270 is formed of, as shown in
The heating main body 271 is formed of thin and curved cylindrical inner shell 271a and outer shell 271b as a pair of metal plates, a thin plate-shaped resistive heating element 271c sandwiched and covered between the shells 271a and 271b, a spacer 271d that joins the edges of the shells 271a and 271b and seals up the resistive heating element 271c, and so on.
The spacer 271d is provided at edges in the regions to be exposed to the processing gas in the edges of the shells 271a and 271b as shown in
The attaching portion 272 is formed of a flange 272a joined to the inner shell 271a and a flange 272b joined to the outer shell 271b as shown in
The outer shell 271b and the flange 272b are formed separately from each other and are then joined by welding (for example, TIG welding, plasma welding, laser welding, etc.) or brazing, etc., as shown in
The inner shell 271a and the flange 272a are formed separately from each other and are then joined by welding (for example, TIG welding, plasma welding, laser welding, etc.) or brazing, etc., as shown in
As the inner shell 271a, the outer shell 271b, and the flanges 272a and 272b, the same materials as those in the aforementioned chamber heating unit 50 are applied.
The resistive heating element 271c is formed of, as shown in
In the resistive heating element 271c, a thermocouple 2720 including wires 2715 and 2716 as a temperature sensor for detecting the temperature of the resistive heating element is provided, and from a part thereof, the lead 271c″ is drawn out. The resistive heating element 271c is disposed so that the heat conducting foil 2713 is in contact with the inner shell 271a.
Herein, the insulating film 2711 is made of a resin material excellent in heat resistance such as a polyimide resin or the like, and the heat conducting foil 2713 is formed of a metal foil of stainless steel or the like with a thickness of approximately 50 μm.
Furthermore, while the resistive heating element 271c is disposed between the shells 271a and 271b, as shown in
Herein, as the resistive heating element 271c, a polyimide heater using a polyimide film is employed, however, other than this, a silicon rubber heater, a mica heater, a sheath heater, or the like can be employed. Thus, by using a thin film resistive heating element with flexibility, it can be formed into various shapes corresponding to the inner wall face.
As shown in
First, as shown in
Then, as shown in
Thereafter, as shown in
To the outer shell 271b and the inner shell 271a, a flange 272b and a flange 272a manufactured in advance by cutting, etc., are welded and spacers 271d are welded to the edges of the shells 271a and 271b, and thereafter, a resistive heating element 271c is curved and inserted between the shells 271a and 271b and a connector 273 is provided, whereby the exhaust passage heating unit 270 is completed.
This exhaust passage heating unit 370 is formed of, as shown in
The heating main body 371 is formed of thin and cylindrical inner shell 371a and outer shell 371b as a pair of metal plates, a thin plate-shaped resistive heating element 371c sandwiched and covered between the shells 371a and 371b, a spacer 371d that joins the edges of the shells 371a and 371b and seals up the resistive heating element 371c, and so on.
The spacer 371d is provided, as shown in
The attaching portion 372 is formed of flanges 372a and 372b joined to the outer shell 371b as shown in
As the inner shell 371a, the outer shell 371b, and the flanges 372a and 372b, the same materials as those in the aforementioned chamber heating unit 50 are applied, and as the resistive heating element 371c, its form is shaped as shown in
As shown in
Thereby, the flange portions 412 and 412 of the exhaust pipe 410′ can be joined closer to each other. Even in this case, the attaching and detaching operations are also easily performed and the heating efficiency increases similarly to the description provided above.
This exhaust passage heating unit 470 is formed of, as shown in
The heating main body 471 is formed of thin and bottomed cylindrical inner shell 471a and outer shell 471b as a pair of metal plates, a thin plate-shaped resistive heating element 471c sandwiched and covered between the shells 471a and 471b, a spacer 471d that joins the edges of the shells 471a and 471b and seals up the resistive heating element 471c, and so on.
The spacer 471d is provided at both edges to be exposed to the processing gas in the edge portions of the shells 471a and 471b to completely prevent the resistive heating element 471c from being exposed from the processing gas or the like.
The attaching portion 472 is formed of, as shown in
As the inner shell 471a, the outer shell 471b, and the flanges 472a and 472b, the same materials as those in the aforementioned chamber heating unit 50 are applied, and as the resistive heating element 471c, its form is shaped as shown in
As shown in
In the above-mentioned embodiments, a sheet-like heating unit is shown that covers the inner wall faces 11a, 11b, 12a, and 13a of the processing chamber 11, the transferring passage 12, and the exhaust passage 13 and the inner wall faces 410a, 420a, 410a′, and 440a of the exhaust pipes 410, 420, and 410′ of a CVD device from the inner side. However, the heating unit is not limited thereto, and a sheet-like heating unit that covers the inner wall face of a supply passage for supplying a processing gas or the like can also be employed.
The above-mentioned embodiments show the case where the heating units 50, 60, 70, and 80 that heat all the processing chamber 11, the transferring passage 12, and the exhaust passage 13 in the CVD device are employed, however, it is also allowed that any one of the heating units is employed.
In the above-mentioned embodiments, a CVD device is shown as a semiconductor manufacturing device to which the heating unit of the present invention is applied, however, the heating unit is also applicable to an etching device or other processing devices.
According to the semiconductor manufacturing device and the heating unit thereof constructed as described above, improvement in yield of wafers to be treated, an increase in operating time, and reduction in power consumption by improvement in energy efficiency are realized by preventing or minimizing adhesion of by-products to the inner wall faces of the passages and processing chamber to be exposed to a processing gas or the like.
As described above, as well as being applicable to a semiconductor manufacturing device such as a CVD device, an etching device or the like, the heating unit of the present invention can be used for other devices as long as the devices require direct heating of inner wall faces that demarcate passages or spaces from the inner side.
Number | Date | Country | Kind |
---|---|---|---|
2003-145790 | May 2005 | JP | national |
2003-399372 | Nov 2003 | JP | national |
2003-401509 | Dec 2003 | JP | national |
2004-034872 | Feb 2004 | JP | national |
Filing Document | Filing Date | Country | Kind | 371c Date |
---|---|---|---|---|
PCT/JP04/07114 | 5/19/2004 | WO | 11/8/2005 |