Semiconductor manufacturing equipment and heater

Abstract

Semiconductor manufacturing equipment includes a heater element configured to heat a wafer, a first connection part and a second connection part which are integrated with the heater element, configured to apply voltages to the heater element, a first electrode contacted with and fixed to the first connection part on a first surface of the first electrode configured to be to apply a voltage to the first connection part, a second electrode which is contacted with and fixed to the second connection part on a second surface of the second electrode, configured to apply a voltage to the second connection part, and the second surface is perpendicular to the direction of the first surface.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate embodiments of the invention, and together with the general description given above and the detailed description of the embodiments given below, serve to explain the principles of the invention.

FIG. 1 is a cross-section view showing the semiconductor manufacturing equipment relating to the first embodiment of the present invention;

FIG. 2 is a perspective view showing the heater relating to an embodiment of the present invention;

FIG. 3 is a side view showing the heater shown in FIG. 2;

FIG. 4 is a drawing showing another pattern of a heater element relating to an embodiment of the present invention;

FIG. 5 is a drawing showing a connection part and a connecting portion of an electrode relating to an embodiment of the present invention;

FIG. 6 is a drawing showing connection parts and connecting portions of the electrodes relating to an embodiment of the present invention;

FIG. 7 is a cross-section view showing the semiconductor manufacturing equipment relating to another embodiment of the present invention;

FIG. 8 is a perspective view showing the heater relating to another embodiment of the present invention; and

FIG. 9 is a side view showing the heater shown in FIG. 8.

Claims

1. Semiconductor manufacturing equipment, the equipment comprising: a heater element configured to heat a wafer;a first connection part and a second connection part configured to apply voltages to the heater element, both of the connection parts integrated with the heater element;a first electrode contacted with and fixed to the first connection part on a first surface of the first electrode configured to be to apply a voltage to the first connection part; anda second electrode contacted with and fixed to the second connection part on a second surface of the second electrode configured to apply a voltage to the second connection part, wherein the second surface is perpendicular to the direction of the first surface.

2. The equipment according to claim 1, wherein the first connection part and the first electrode are fixed at a first fixed position having a movable range in an in-plane direction of the first surface; and the second connection part and the second electrode are fixed at a second fixed position having a movable range in an in-plane direction of the second surface.

3. The equipment according to claim 1, wherein the heater element configured to heat the wafer from a rear surface is a sheet-shaped.

4. The equipment according to claim 1, wherein the heater element configured to heat the wafer from an outer circumference is a ring-shaped.

5. The equipment according to claim 1, wherein the heater element is made of material selected from the group consisting of a carbon material, a SiC material, a carbon material coated with SiC, a SiC material coated with SiC, and a high melting-point metal material.

6. The equipment according to claim 1, further comprising openings prepared in the first and the second connection parts, and the first and the second electrodes, respectively; a first bolt configured to fix the first connection part and the first electrode by passing though the opening of the first connection part, the first bolt having smaller diameter than the opening of the first connection part; anda second bolt configured to fix the second connection part and the second electrode by passing through the opening of the second connection part, the second bolt having smaller diameter than the opening of the second connection part.

7. Semiconductor manufacturing equipment, comprising: a heater element configured to heat a wafer;a first connection part and a second connection part configured to apply voltages to the heater element, both of the connection parts integrated with the heater element;a first electrode contacted with and fixed to the first connection part on a first surface of the first electrode configured to be to apply a voltage to the first connection part;a second electrode contacted with and fixed to the second connection part on a second surface of the second electrode configured to apply a voltage to the second connection part;openings prepared in the first and the second connection parts, and the first and the second electrodes, respectively;a first bolt configured to fix the first connection part and the first electrode by passing though the opening of the first connection part, the first bolt having smaller diameter than the opening of the first connection part; anda second bolt configured to fix the second connection part and the second electrode by passing through the opening of the second connection part, the second bolt having smaller diameter than the opening of the second connection part.

8. The equipment according to claim 7, wherein the first and the second surfaces are substantially in the same plane.

9. The equipment according to claim 7, wherein the heater element configured to heat the wafer from an outer circumference is a ring-shaped.

10. The equipment according to claim 7, wherein the heater element is made of material selected from the group consisting of a carbon material, a SiC material, a carbon material coated with SiC, a SiC material coated with SiC, and a high melting-point metal material.

11. The equipment according to claim 1, further comprising: a first electrode rod configured to fix the first electrode;a second electrode rod configured to fix the second electrode;a heater shaft configured to hold the first and the second electrodes and;play between an upper part of the heater shaft and each head part of the first and the second electrode rods.

12. A heater comprising: a heater element configured to heat a wafer from a rear surface;a first connection part configured to apply voltages to the heater element, the connection parts integrated with the heater element;a second connection part configured to apply voltages to the heater element, the connection parts integrated with the heater element,wherein the second surface is perpendicular to the direction of the first surface.

13. The heater according to claim 12, wherein the heater element configured to heat the wafer from a rear surface is a sheet-shaped.

14. The heater according to claim 12, wherein the heater element configured to heat the wafer from an outer circumference is a ring-shaped.

15. The heater according to claim 12, wherein the heater element is made of material selected from the group consisting of a carbon material, a SiC material, a carbon material coated with SiC, a SiC material coated with SiC, and a high melting-point metal material.