Claims
- 1. A semiconductor memory device comprising:
bit lines; word lines crossing said bit lines; memory cells arranged at intersections of said bit lines and said word lines, said memory cells including a plurality of capacitors to which a plate electrode is connected in common; and bit-line precharge circuits whose power supply terminals are connected to the plate electrode, to precharge said bit lines at a potential corresponding to a potential of the plate electrode, wherein said plate electrode extends from an area where said memory cells are provided to an area where said bit-line precharge circuits are provided, and said plate electrode is in contact with a power supply terminal of the bit-line precharge circuits in the area where bit-line precharge circuits are provided.
- 2. The semiconductor memory device according to claim 1, wherein said bit lines are constituted of bit line pairs, and each of said bit-line precharge circuits is provided for each of the bit line pairs.
- 3. The semiconductor memory device according to claim 1, wherein each of said bit-line precharge circuits is provided for each of the bit line pairs.
- 4. The semiconductor memory device according to claim 2, wherein each of said bit-line precharge circuits includes a first MOS transistor for precharge, whose source is connected to the power supply terminal of said each of said bit-line precharge circuits, whose drain is connected to one bit line of each of said bit line pairs, and whose gate is connected to a precharge signal line, a second MOS transistor for precharge, whose source is connected to the power supply terminal, whose drain is connected to other bit line thereof, and whose gate is connected to the precharge signal line, and a third MOS transistor for equalization, whose current path is connected between the bit line pairs and whose gate is connected to the precharge signal line.
- 5. The semiconductor memory device according to claim 1, further comprising a plate potential generator formed in a chip on which the dynamic memory cells are formed, to apply a plate potential to the power supply terminals of said bit-line precharge circuits.
- 6. The semiconductor memory device according to claim 1, further comprising a plate potential generator formed outside a chip on which the dynamic memory cells are formed, to apply a plate potential to the power supply terminals of said bit-line precharge circuits.
- 7. The semiconductor memory device according to claim 1, further comprising:
a precharge potential generator to generate a precharge potential to apply the precharge potential to the power supply terminals of said bit-line precharge circuits; a plate potential generator to generate a plate potential other than the precharge potential to apply the plate potential to the plate electrode; and capacitors each connected between the plate electrode and each of said bit-line precharge circuits.
- 8. The semiconductor memory device according to claim 7, wherein said bit lines are constituted of bit line pairs, each of said bit-line precharge circuits is provided for each of the bit line pairs, and each of said capacitors is provided for each of said bit-line precharge circuits.
- 9. A semiconductor memory device comprising:
a semiconductor substrate; a memory cell array formed in said semiconductor substrate, said memory cell array including bit lines and word lines crossing each other and memory cells arranged at intersections of the bit lines and the word lines and each having a transistor and a capacitor, said capacitor being formed on an interlayer insulation film that covers both said transistor and bit-line precharge circuits, and including a first electrode electrically connected through the interlayer insulation film to an impurity diffusion layer of the transistor and serving as a storage node, a capacitor insulation film formed on the first electrode, and a second electrode arranged on the capacitor insulation film; bit-line precharge circuits formed in said semiconductor substrate, to precharge the bit lines; and a plate electrode serving as the second electrode of each capacitor of the memory cells, extending from an area where the memory cell array is formed to an area where the bit-line precharge circuits are formed, and applying a power supply potential to said bit-line precharge circuits, said plate electrode being electrically connected to an impurity diffusion layer through a contact hole in the area where the bit-line precharge circuits are formed, said impurity diffusion layer serving as the power supply terminal of the bit-line precharge circuits, and said contact hole being formed through both the capacitor insulation film and the interlayer insulation film.
- 10. The semiconductor memory device according to claim 9, wherein said plate electrode is connected to power supply terminals of said bit-line precharge circuits.
- 11. The semiconductor memory device according to claim 9, wherein the capacitors of the memory cells each have a stacked structure.
- 12. The semiconductor memory device according to claim 9, wherein the capacitors of the memory cells each have a trench structure.
- 13. The semiconductor memory device according to claim 9, wherein said bit-line precharge circuits precharge the bit lines at a potential which is in proportion to a potential of said plate electrode.
- 14. The semiconductor memory device according to claim 9, wherein the capacitors are formed on an interlayer insulation film covering transistors of the memory cells and the bit-line precharge circuits, and each includes a first electrode connected to an impurity diffusion layer of the transistor of a memory cell through the interlayer insulation film and serving as a storage node, a capacitor insulation film formed on the first electrode, and a second electrode formed on the capacitor insulation film and serving as said plate electrode; and
said plate electrode is connected to an impurity diffusion layer serving as power supply terminals of the bit-line precharge circuits via a contact hole formed through the capacitor insulation film and the interlayer insulation film.
- 15. A semiconductor memory device comprising:
a semiconductor substrate; a memory cell array formed in said semiconductor substrate, said memory cell array including bit lines and word lines crossing each other and memory cells arranged at intersections of the bit lines and the word lines and each having a transistor and a capacitor, said capacitor including a first electrode constituted of an impurity diffusion layer formed along a side wall and a bottom of a trench continuously with an impurity diffusion layer of the transistor and serving as a storage node, said trench being formed on a major surface of said semiconductor substrate adjacent to the transistor of each of said memory cells; a capacitor insulation film formed in the trench; and a second electrode buried into the trench with the capacitor insulation film interposed therebetween; bit-line precharge circuits formed in said semiconductor substrate, to precharge the bit-lines; a plate electrode serving as the second electrode of each capacitor of the memory cells and formed on an interlayer insulation film that covers both the transistor of the memory cells and the capacitor in the area where the memory cell array is formed; and a wiring layer electrically connected to the plate electrode and connected to the impurity diffusion layer in the area where the bit-line precharge circuits are formed, said impurity diffusion layer serving as a power supply terminal of the bit-line precharge circuits, and said wiring layer being connected to the impurity diffusion layer through a contact hole formed in the interlayer insulation film.
- 16. A semiconductor memory device comprising:
a semiconductor substrate; a memory cell array formed in said semiconductor substrate, said memory cell array including bit lines and word lines crossing each other and memory cells arranged at intersections of the bit lines and the word lines and each having a transistor and a capacitor, said capacitor including an impurity diffusion layer serving as a first electrode and formed along a side wall and a bottom of a trench, said trench being formed on a major surface of said semiconductor substrate adjacent to the transistor of each of said memory cells; a capacitor insulation film formed in the trench; and a second electrode buried into the trench with the capacitor insulation film interposed therebetween and electrically connected to an impurity diffusion layer of the transistor to serve as a storage node; bit-line precharge circuits formed in said semiconductor substrate, to precharge the bit-lines; a plate electrode extending from an area where the memory cell array is formed to an area where the bit-line precharge circuits are formed, and being for applying a power supply potential to said-bit-line precharge circuits, said plate electrode being formed of a buried diffusion layer arranged inside the semiconductor substrate and being electrically connected to the first electrode of the capacitor, said plate electrode being also connected to an impurity diffusion layer serving as the power supply terminal of the bit-line precharge circuits.
- 17. The semiconductor memory device according to claim 9, further comprising a plate potential generator formed in said semiconductor substrate on which said memory cells are formed, to apply a plate potential to power supply terminals of said bit-line precharge circuits.
- 18. The semiconductor memory device according to claim 9, further comprising a plate potential generator formed outside said semiconductor substrate on which the memory cells are formed, to apply a plate potential to power supply terminals of said bit-line precharge circuits.
- 19. The semiconductor memory device according to claim 9, further comprising:
a precharge potential generator to generate a precharge potential to apply the precharge potential to power supply terminals of said bit-line precharge circuits; a plate potential generator to generate a plate potential other than the precharge potential to apply the plate potential to the plate electrode; and capacitors each connected between-the plate electrode and each of said bit-line precharge circuits.
- 20. The semiconductor memory device according to claim 19, wherein said bit lines are constituted of bit line pairs, each of said bit-line precharge circuits is provided for each of the bit line pairs, and each of the capacitors is provided for each of said bit-line precharge circuits.
- 21. The semiconductor memory device according to claim 15, further comprising a plate potential generator formed in said semiconductor substrate on which said memory cells are formed, to apply a plate potential to power supply terminals of said bit-line precharge circuits.
- 22. The semiconductor memory device according to claim 15, further comprising:
a precharge potential generator to generate a precharge potential to apply the precharge potential to power supply terminals of said bit-line precharge circuits; a plate potential generator to generate a plate potential other than the precharge potential to apply the plate potential to the plate electrode; and capacitors each connected between the plate electrode and each of said bit-line precharge circuits.
- 23. The semiconductor memory device according to claim 22, wherein said bit lines are constituted of bit line pairs, each of said bit-line precharge circuits is provided for each of the bit line pairs, and each of the capacitors is provided for each of said bit-line precharge circuits.
- 24. The semiconductor memory device according to claim 16, further comprising a plate potential generator formed in said semiconductor substrate on which said memory cells are formed, to apply a plate potential to power supply terminals of said bit-line precharge circuits.
- 25. The semiconductor memory device according to claim 16, further comprising:
a precharge potential generator to generate a precharge potential to apply the precharge potential to power supply terminals of said bit-line precharge circuits; a plate potential generator to generate a plate potential other than the precharge potential to apply the plate potential to the plate electrode; and capacitors each connected between the plate electrode and each of said bit-line precharge circuits.
- 26. The semiconductor memory device according to claim 25, wherein said bit lines are constituted of bit line pairs, each of said bit-line precharge circuits is provided for each of the bit line pairs, and each of the capacitors is provided for each of said bit-line precharge circuits.
- 27. A semiconductor memory device comprising:
bit lines; word lines crossing said bit lines; memory cells arranged at intersections of said bit lines and said word lines, said memory cells including a plurality of capacitors to which a plate electrode is connected in common; an insulation film formed on the plate electrode; a bit-line precharge circuit for precharging said bit lines; and a wiring layer formed on said insulation film and electrically connected to said plate electrode and a power supply terminal of said bit-line precharge circuit.
- 28. The semiconductor memory device according to claim 27, wherein said wiring layer is a single metal layer and directly connected to said plate electrode and the power supply terminal of said bit-line precharge circuit.
- 29. The semiconductor memory device according to claim 27, wherein said wiring layer extends from above a first memory cell array onto a second memory cell array adjacent to the first memory cell array, a region with said bit-line precharge circuit being interposed between the first memory cell array and the second memory cell array.
- 30. The semiconductor memory device according to claim 27, wherein said wiring layer is formed on a boundary region between a region with a memory cell array and the region with said bit-line precharge circuit.
- 31. The semiconductor memory device according to claim 27, wherein said wiring layer is connected to said plate electrode through a via hole near the region with said bit-line precharge circuit in a memory cell-array.
- 32. The semiconductor memory device according to claim 27, wherein said wiring layer is connected to the power supply terminal of said bit-line precharge circuit through a contact hole formed in said insulation film near a memory cell array in the region with said bit-line precharge circuit.
- 33. The semiconductor memory device according to claim 27, wherein said wiring layer is connected to said plate electrode through a via hole near the region with said bit-line precharge circuit in a memory cell array and connected to the power supply terminal of said bit-line precharge circuit through a contact hole formed in said insulation film near a memory cell array in the region with said bit-line precharge circuit.
- 34. The semiconductor memory device according to claim 27, wherein said plate electrode extends from above a memory cell array to a vicinity of the region with said bit-line precharge circuit.
- 35. A semiconductor memory device comprising:
bit lines; word lines crossing said bit lines; memory cells arranged at intersections of said bit lines and said word lines, said memory cells including a plurality of capacitors to which a plate electrode is connected in common; a first insulation film formed on the plate electrode; a bit-line precharge circuit for precharging said bit lines; a first wiring layer formed on said first insulation film along a direction crossing said bit lines, said first wiring layer being connected to said plate electrode through a first via hole located on said plate electrode of said first insulation film; a second wiring layer formed on said first insulation film along a direction crossing said bit lines, said second wiring layer being connected to a power supply terminal of said bit-line precharge circuit through a contact hole located on said bit-line precharge circuit of said first insulation film; a second insulation film formed on said first wiring layer, said second wiring layer, and said first insulation film; and a third wiring layer formed on said second insulation film along a direction which is equal to that of said bit lines, said third wiring layer being connected to said first wiring layer through a second via hole formed in said second insulation film and said second wiring layer through a third via hole formed in said second insulation film.
- 36. The semiconductor memory device according to claim 35, wherein said first wiring layer is formed near a region with said bit-line precharge circuit on a memory cell array.
- 37. The semiconductor memory device according to claim 35, wherein said first wiring layer are formed on and between adjacent memory cell arrays and above a row decoder interposed between the memory cell arrays.
- 38. The semiconductor memory device according to claim 37, wherein said first wiring layer is formed near a region with said bit-line precharge circuit on the memory cell arrays.
- 39. The semiconductor memory device according to claim 37, wherein said second wiring layer is formed near a memory cell array on a region with said bit-line precharge circuit.
- 40. The semiconductor memory device according to claim 35, wherein said third wiring layer is connected to said first wiring layer through said second via hole near a region with said bit-line precharge circuit in a memory cell array.
- 41. The semiconductor memory device according to claim 35, wherein said third wiring layer is connected to said second wiring layer through said third via hole near a memory cell array in a region with said bit-line precharge circuit.
- 42. The semiconductor memory device according to claim 35, wherein said third wiring layer is connected to said first wiring layer through said second via hole near a region with said bit-line precharge circuit in a memory cell array and connected to said second wiring layer through said third via hole near the memory cell array in a region with said bit-line precharge circuit.
- 43. The semiconductor memory device according to claim 35, wherein said third wiring layer is formed on a region where a row decoder is formed and connected to the first wiring layer through the second via hole on the region where the row decoder is formed, and the third wiring layer is connected to the second wiring layer through the third via hole at intersections of row decoders and sense amplifiers.
Priority Claims (1)
Number |
Date |
Country |
Kind |
10-046439 |
Feb 1998 |
JP |
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CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This is a Continuation-in-Part application of U.S. patent application Ser. No. 09/256,302, filed Feb. 24, 1999, the entire contents of which are incorporated herein by reference.
Divisions (1)
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Number |
Date |
Country |
Parent |
09609774 |
Jul 2000 |
US |
Child |
10077899 |
Feb 2002 |
US |
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
09256302 |
Feb 1999 |
US |
Child |
09609774 |
Jul 2000 |
US |