Claims
- 1. A semiconductor optical memory, comprising:
- cathode and anode layers;
- a gate layer provided between said cathode and anode layers; and
- n and p electrodes for applying a predetermined voltage across said cathode and anode layers;
- wherein said gate layer includes:
- a p gate layer provided on a side of said cathode layer; and
- an n gate layer provided on a side of said anode layer; said n gate layer including a first layer of a first impurity concentration having a predetermined bandgap energy in contact with said p gate layer, and a second layer of a second impurity concentration and having said predetermined bandgap energy in non-contact with said p gate layer, said first impurity concentration being greater than 0.6.times.10.sup.17 cm.sup.-3 and said second impurity concentration being greater than 1.0.times.10.sup.18 cm.sup.-3, and said predetermined bandgap energy being lower than bandgap energies of said cathode and anode layers.
- 2. A semiconductor optical memory comprising:
- cathode and anode layers;
- a gate layer provided between said cathode and anode layers; and
- n and p electrodes for applying a predetermined voltage across said cathode and anode layers;
- wherein said gate layer includes:
- a p gate layer provided on a side of said cathode layer; and
- an n gate layer provided on a side of said anode layer; said p gate layer including a first layer of a first impurity concentration having a predetermined bandgap energy in contact with said n gate layer, and a second layer of a second impurity concentration and having said predetermined bandgap energy in non-contact with said n gate layer, said first impurity concentration being greater than 0.6.times.10.sup.17 cm.sup.-3 and said second impurity concentration being greater than 1.0.times.10.sup.18 cm.sup.-3, and said predetermined bandgap energy being lower than bandgap energies of said cathode and anode layers.
Priority Claims (1)
Number |
Date |
Country |
Kind |
63-310361 |
Dec 1988 |
JPX |
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Parent Case Info
This is a continuation of application Ser. No. 07/447,483 filed Dec. 7, 1989, now abandoned.
US Referenced Citations (3)
Number |
Name |
Date |
Kind |
4122407 |
Van Vechten |
Oct 1978 |
|
4301463 |
Barrus, Jr. et al. |
Nov 1981 |
|
4819048 |
Mand et al. |
Apr 1989 |
|
Non-Patent Literature Citations (2)
Entry |
Kasahara et al., `Double Heterostructure . . . Switch . . . `, Appl Phys Letts 52(9), 29 Feb. 88. |
Taylor et al, "A New Double Heterostructure Optoelectronic Switching Device Using Molecular Beam Epitaxy", J. Appl. Phys. 59(2), 15 Jan. 1986, pp. 596-600. |
Continuations (1)
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Number |
Date |
Country |
Parent |
447483 |
Dec 1989 |
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