integrated circuits made of compound material

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H01L27/0605

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L27/00Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate

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H01L27/0605integrated circuits made of compound material

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit device
- Patent number 12,237,324
- Issue date Feb 25, 2025
- Samsung Electronics Co., Ltd.
- Jangeun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor bidirectional switching device and meth...
- Patent number 12,218,128
- Issue date Feb 4, 2025
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,205,945
- Issue date Jan 21, 2025
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Danfeng Mao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor bidirectional switching device and meth...
- Patent number 12,176,343
- Issue date Dec 24, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device
- Patent number 12,166,033
- Issue date Dec 10, 2024
- INNOLUX CORPORATION
- Chin-Lung Ting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride (GAN) three-dimensional integrated circuit technology
- Patent number 12,148,747
- Issue date Nov 19, 2024
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power amplifier modules including semiconductor resistor and tantal...
- Patent number 12,143,077
- Issue date Nov 12, 2024
- Skyworks Solutions, Inc.
- Peter J. Zampardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices for integrated front-end circuits
- Patent number 12,132,052
- Issue date Oct 29, 2024
- MONDE Wireless, Inc.
- Matthew Guidry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistor and resistor-transistor-logic circuit with GaN structure a...
- Patent number 12,132,043
- Issue date Oct 29, 2024
- United Microelectronics Corp.
- Kuo-Hsing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device
- Patent number 12,125,845
- Issue date Oct 22, 2024
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Hang Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor bidirectional switching device and meth...
- Patent number 12,125,844
- Issue date Oct 22, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistor and resistor-transistor-logic circuit with GaN structure a...
- Patent number 12,119,342
- Issue date Oct 15, 2024
- United Microelectronics Corp.
- Kuo-Hsing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of capacitor structure including patterned con...
- Patent number 12,113,098
- Issue date Oct 8, 2024
- United Microelectronics Corp.
- Chih-Tung Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with linear capacitance
- Patent number 12,113,061
- Issue date Oct 8, 2024
- Massachusetts Institute of Technology
- Tomas Palacios
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fringe capacitor, integrated circuit and manufacturing process for...
- Patent number 12,113,062
- Issue date Oct 8, 2024
- Texas Instruments Incorporated
- Naveen Tipirneni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,094,956
- Issue date Sep 17, 2024
- United Microelectronics Corp.
- Chin-Hung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 12,094,963
- Issue date Sep 17, 2024
- Infineon Technologies Austria AG
- Oliver Haeberlen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 12,087,762
- Issue date Sep 10, 2024
- Panasonic Holdings Corporation
- Daisuke Shibata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor bidirectional switching device and meth...
- Patent number 12,087,763
- Issue date Sep 10, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device integration schemes leveraging a bulk semiconductor substrat...
- Patent number 12,087,764
- Issue date Sep 10, 2024
- GLOBALFOUNDRIES U.S. INC.
- Mark Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride integrated circuits including non-gold-based metall...
- Patent number 12,087,713
- Issue date Sep 10, 2024
- Analog Devices, Inc.
- Daniel Piedra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated semiconductor device
- Patent number 12,074,093
- Issue date Aug 27, 2024
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Manabu Yanagihara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor bidirectional switching device and meth...
- Patent number 12,074,159
- Issue date Aug 27, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor bidirectional switching device and meth...
- Patent number 12,062,653
- Issue date Aug 13, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qiyue Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V semiconductor device with integrated protection functions
- Patent number 12,046,667
- Issue date Jul 23, 2024
- CAMBRIDGE GAN DEVICES LIMITED
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,046,593
- Issue date Jul 23, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Danfeng Mao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithically integrated GaN-based half-bridge circuit and half-br...
- Patent number 12,046,594
- Issue date Jul 23, 2024
- Southeast University
- Long Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Concept for silicon carbide power devices
- Patent number 12,034,001
- Issue date Jul 9, 2024
- II-VI ADVANCED MATERIALS, LLC
- Adolf Schoner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Clamping circuit integrated on gallium nitride semiconductor device...
- Patent number 12,027,514
- Issue date Jul 2, 2024
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Yaobin Guan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge protection circuit and semiconductor circuit
- Patent number 11,973,076
- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Ming-Fang Lai
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ISOLATION OF A POWER HEMT FROM OTHER CIRCUITS
- Publication number 20250072102
- Publication date Feb 27, 2025
- Cambridge GaN Devices Limited
- Loizos EFTHYMIOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE
- Publication number 20250063801
- Publication date Feb 20, 2025
- Innolux Corporation
- Chin-Lung Ting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES FOR INTEGRATED FRONT-END CIRCUITS
- Publication number 20250056878
- Publication date Feb 13, 2025
- MONDE Wireless Inc.
- Matthew Guidry
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...
- Publication number 20250048713
- Publication date Feb 6, 2025
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Zhiwen DONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE (GAN) THREE-DIMENSIONAL INTEGRATED CIRCUIT TECHNOLOGY
- Publication number 20250040231
- Publication date Jan 30, 2025
- Intel Corporation
- Han Wui THEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER AMPLIFIER SYSTEMS INCLUDING CONTROL INTERFACE AND WIRE BOND PAD
- Publication number 20250030386
- Publication date Jan 23, 2025
- Skyworks Solutions, Inc.
- Weimin Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DIE WITH GROUP III NITRIDE-BASED AMPLIFIER CIRCUITS
- Publication number 20250015076
- Publication date Jan 9, 2025
- MACOM Technology Solutions Holdings, Inc.
- Simon Maurice Wood
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTOR AND RESISTOR-TRANSISTOR-LOGIC CIRCUIT WITH GAN STRUCTURE A...
- Publication number 20240429228
- Publication date Dec 26, 2024
- UNITED MICROELECTRONICS CORP.
- Kuo-Hsing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FRINGE CAPACITOR, INTEGRATED CIRCUIT AND MANUFACTURING PROCESS FOR...
- Publication number 20240429233
- Publication date Dec 26, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Naveen Tipirneni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240395909
- Publication date Nov 28, 2024
- UNITED MICROELECTRONICS CORP.
- Chin-Hung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONCEPT FOR SILICON CARBIDE POWER DEVICES
- Publication number 20240321868
- Publication date Sep 26, 2024
- II-VI ADVANCED MATERIALS, LLC
- Adolf SCHONER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE MATERIAL SEMICONDUCTOR STRUCTURES ON CONDUCTIVE SILICON...
- Publication number 20240266405
- Publication date Aug 8, 2024
- MACOM Technology Solutions Holdings, Inc.
- Timothy E. Boles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240243121
- Publication date Jul 18, 2024
- Vanguard International Semiconductor Corporation
- Shin-Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT AND SEMICONDUCTOR CIRCUIT
- Publication number 20240234411
- Publication date Jul 11, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- MING-FANG LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MODULE
- Publication number 20240234392
- Publication date Jul 11, 2024
- ROBERT BOSCH GmbH
- Felix Stewing
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-TERMINAL BIDIRECTIONAL ENHANCEMENT MODE GaN SWITCH
- Publication number 20240234513
- Publication date Jul 11, 2024
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIXED MATERIAL POWER DEVICES AND DRIVER CIRCUITS
- Publication number 20240223182
- Publication date Jul 4, 2024
- Cambridge GaN Devices Limited
- Florin Udrea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR REDUCED SUBSTRATE LOSS FOR GAN DEVICES
- Publication number 20240222365
- Publication date Jul 4, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Ebenezer Eshun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE INTEGRATION SCHEMES LEVERAGING A BULK SEMICONDUCTOR SUBSTRAT...
- Publication number 20240222366
- Publication date Jul 4, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Mark Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED BIDIRECTIONAL SWITCHING DEVICE FOR BATTERY MANAGEMENT...
- Publication number 20240204058
- Publication date Jun 20, 2024
- INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.
- Qiyue ZHAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN Die Having a Main GaN Power Transistor and a GaN Current Sense...
- Publication number 20240203981
- Publication date Jun 20, 2024
- Derek Bernardon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240194669
- Publication date Jun 13, 2024
- Vanguard International Semiconductor Corporation
- Chia-Hao Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CAPACITANCE REDUCTION IN GAN-ON-SILICON DEVICES
- Publication number 20240178220
- Publication date May 30, 2024
- MACOM Technology Solutions Holdings, Inc.
- Gabriel R. Cueva
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH P-FET TYPE BEHAVIOUR
- Publication number 20240162299
- Publication date May 16, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Julien BUCKLEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VOLTAGE REGULATOR CIRCUIT
- Publication number 20240136351
- Publication date Apr 25, 2024
- STMicroelectronics (Rousset) SAS
- Loic BOURGUINE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-TERMINAL BIDIRECTIONAL ENHANCEMENT MODE GaN SWITCH
- Publication number 20240136408
- Publication date Apr 25, 2024
- Efficient Power Conversion Corporation
- Jianjun Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MODULE
- Publication number 20240136343
- Publication date Apr 25, 2024
- ROBERT BOSCH GmbH
- Felix Stewing
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRICALLY PROGRAMMABLE FUSE OVER CRYSTALLINE SEMICONDUCTOR MATER...
- Publication number 20240105595
- Publication date Mar 28, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan A. Kantarovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240096878
- Publication date Mar 21, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Danfeng MAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THEREOF
- Publication number 20240087962
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- MAN-HO KWAN
- H01 - BASIC ELECTRIC ELEMENTS

integrated circuits made of compound material

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Integrated circuit device

Nitride-based semiconductor bidirectional switching device and meth...

Semiconductor device and manufacturing method thereof

Nitride-based semiconductor bidirectional switching device and meth...

Electronic device

Gallium nitride (GAN) three-dimensional integrated circuit technology

Power amplifier modules including semiconductor resistor and tantal...

Devices for integrated front-end circuits

Resistor and resistor-transistor-logic circuit with GaN structure a...

Electronic device

Nitride-based semiconductor bidirectional switching device and meth...

Resistor and resistor-transistor-logic circuit with GaN structure a...

Manufacturing method of capacitor structure including patterned con...

Semiconductor device with linear capacitance

Fringe capacitor, integrated circuit and manufacturing process for...

Semiconductor device and method for fabricating the same

Nitride semiconductor device

Nitride semiconductor device

Nitride-based semiconductor bidirectional switching device and meth...

Device integration schemes leveraging a bulk semiconductor substrat...

Gallium nitride integrated circuits including non-gold-based metall...

Integrated semiconductor device

Nitride-based semiconductor bidirectional switching device and meth...

Nitride-based semiconductor bidirectional switching device and meth...

III-V semiconductor device with integrated protection functions

Semiconductor device and manufacturing method thereof

Monolithically integrated GaN-based half-bridge circuit and half-br...

Concept for silicon carbide power devices

Clamping circuit integrated on gallium nitride semiconductor device...

Electrostatic discharge protection circuit and semiconductor circuit

Patents Applicationslast 30 patents

ISOLATION OF A POWER HEMT FROM OTHER CIRCUITS

ELECTRONIC DEVICE

DEVICES FOR INTEGRATED FRONT-END CIRCUITS

NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE...

GALLIUM NITRIDE (GAN) THREE-DIMENSIONAL INTEGRATED CIRCUIT TECHNOLOGY

POWER AMPLIFIER SYSTEMS INCLUDING CONTROL INTERFACE AND WIRE BOND PAD

SEMICONDUCTOR DIE WITH GROUP III NITRIDE-BASED AMPLIFIER CIRCUITS

RESISTOR AND RESISTOR-TRANSISTOR-LOGIC CIRCUIT WITH GAN STRUCTURE A...

FRINGE CAPACITOR, INTEGRATED CIRCUIT AND MANUFACTURING PROCESS FOR...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

CONCEPT FOR SILICON CARBIDE POWER DEVICES

III-NITRIDE MATERIAL SEMICONDUCTOR STRUCTURES ON CONDUCTIVE SILICON...

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT AND SEMICONDUCTOR CIRCUIT

SEMICONDUCTOR MODULE

THREE-TERMINAL BIDIRECTIONAL ENHANCEMENT MODE GaN SWITCH

MIXED MATERIAL POWER DEVICES AND DRIVER CIRCUITS

METHOD AND STRUCTURE FOR REDUCED SUBSTRATE LOSS FOR GAN DEVICES

DEVICE INTEGRATION SCHEMES LEVERAGING A BULK SEMICONDUCTOR SUBSTRAT...

NITRIDE-BASED BIDIRECTIONAL SWITCHING DEVICE FOR BATTERY MANAGEMENT...

GaN Die Having a Main GaN Power Transistor and a GaN Current Sense...

SEMICONDUCTOR DEVICE

PARASITIC CAPACITANCE REDUCTION IN GAN-ON-SILICON DEVICES

FIELD EFFECT TRANSISTOR WITH P-FET TYPE BEHAVIOUR

VOLTAGE REGULATOR CIRCUIT

THREE-TERMINAL BIDIRECTIONAL ENHANCEMENT MODE GaN SWITCH

SEMICONDUCTOR MODULE

ELECTRICALLY PROGRAMMABLE FUSE OVER CRYSTALLINE SEMICONDUCTOR MATER...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THEREOF