Number | Date | Country | Kind |
---|---|---|---|
57-211601 | Nov 1982 | JPX |
Number | Name | Date | Kind |
---|---|---|---|
4272830 | Moench | Jun 1981 | |
4322823 | Pricer et al. | Mar 1982 | |
4395725 | Parekh | Jul 1983 | |
4410904 | Wollesen | Oct 1983 | |
4480320 | Naiff | Oct 1984 | |
4500975 | Shirato | Feb 1985 |
Number | Date | Country |
---|---|---|
0072079 | May 1980 | JPX |
58-51427 | Nov 1983 | JPX |
Entry |
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IBM Technical Disclosure Bulletin, "Variation in Threshold Voltage Using Reduced Source-Drain Spacing" by R. H. Dennard, vol. 12, No. 9, Feb. 1970, p. 1391. |
Fabrication of High-Performance LDDFET's with Oxide Sidewall-Spacer Technology, Tsang et al, IEEE Transactions, vol. ED-29, No. 4, 1982, pp. 590-596. |