using electrically-fusible links

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CPC
G11C17/16

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C17/00Read-only memories programmable only once Semi-permanent stores

Current Industry

G11C17/16using electrically-fusible links

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Reading circuit for differential OTP memory
- Patent number 12,249,382
- Issue date Mar 11, 2025
- SG MICRO CORP.
- G11 - INFORMATION STORAGE
Information Patent Grant
One-time programmable memory cell and memory thereof
- Patent number 12,250,809
- Issue date Mar 11, 2025
- Chengdu Analog Circuit Technology Inc
- G11 - INFORMATION STORAGE
Information Patent Grant
Merged bit lines for high density memory array
- Patent number 12,243,599
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 12,243,618
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory circuit and method of operating same
- Patent number 12,237,028
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Hao Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems and methods for a compressed bitcell read-only memory
- Patent number 12,237,026
- Issue date Feb 25, 2025
- Advanced Micro Devices, Inc.
- Vaibhav Anand Srivastava
- G11 - INFORMATION STORAGE
Information Patent Grant
Anti-fuse memory
- Patent number 12,237,027
- Issue date Feb 25, 2025
- United Microelectronics Corp.
- Chung-Hao Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-time programmable electronic fuse apparatus
- Patent number 12,235,725
- Issue date Feb 25, 2025
- Espressif Systems (Shanghai) Co., Ltd.
- Li Tong
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Non-volatile memory device having a fuse type memory cell array
- Patent number 12,230,337
- Issue date Feb 18, 2025
- SK keyfoundry Inc.
- Seongjun Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Electronic device and driving method thereof
- Patent number 12,230,339
- Issue date Feb 18, 2025
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Sungsoo Chi
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 12,230,359
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory devices with diode-connected MOS
- Patent number 12,230,338
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory devices with different doping types
- Patent number 12,230,681
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory with one-time programmable (OTP) cells
- Patent number 12,224,024
- Issue date Feb 11, 2025
- NXP USA, INC.
- Anirban Roy
- G11 - INFORMATION STORAGE
Information Patent Grant
One time programmable (OTP) low power circuits and methods for prov...
- Patent number 12,224,023
- Issue date Feb 11, 2025
- Samsung Electronics Co., Ltd.
- Himanshu Saxena
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory device including sense amplifier and method for...
- Patent number 12,224,025
- Issue date Feb 11, 2025
- SK keyfoundry Inc.
- Seong Jun Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Bank design with differential bulk bias in eFuse array
- Patent number 12,217,798
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory readout circuit and method
- Patent number 12,217,810
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Min Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Anti-fuse device and method
- Patent number 12,219,755
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Min-Shin Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
One-time programmable bitcell for frontside and backside power inte...
- Patent number 12,217,809
- Issue date Feb 4, 2025
- Synopsys, Inc.
- Andrew Edward Horch
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices and methods of manufacturing thereof
- Patent number 12,218,047
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Sheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-fuse memory cell circuit and method
- Patent number 12,211,568
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Fuse link programming cell, programming circuit, control circuit, a...
- Patent number 12,198,771
- Issue date Jan 14, 2025
- Shanghai Huali Integrated Circuit Corporation
- Ying Yan
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory devices with dielectric fin structures
- Patent number 12,198,785
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Sheng Chang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method and apparatus for enabling multiple return material authoriz...
- Patent number 12,183,412
- Issue date Dec 31, 2024
- Altera Corporation
- Sankaran M. Menon
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device data loss prevention
- Patent number 12,183,390
- Issue date Dec 31, 2024
- Samsung Electronics Co., Ltd.
- Hijung Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Fuse circuits
- Patent number 12,183,673
- Issue date Dec 31, 2024
- Skyworks Solutions, Inc.
- Bo Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anti-fuse sensing device and operation method thereof
- Patent number 12,185,530
- Issue date Dec 31, 2024
- NANYA TECHNOLOGY CORPORATION
- Chih-Hang Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Operating a memory unit using a low-power direct-current (DC) power...
- Patent number 12,183,408
- Issue date Dec 31, 2024
- Ningbo Aura Semiconductor Co., Ltd.
- Arnold J D'Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MIM eFuse memory devices and fabrication method thereof
- Patent number 12,176,049
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
ASYMMETRICAL CHANNEL FLOATING GATE THREE-STATE ONE-TIME PROGRAMMABL...
- Publication number 20250081449
- Publication date Mar 6, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Jack Qian
- G11 - INFORMATION STORAGE
Information Patent Application
ONE TIME PROGRAMMABLE (OTP) MAGNETORESISTIVE RANDOM-ACCESS MEMORY (...
- Publication number 20250078892
- Publication date Mar 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Hao Lee
- G11 - INFORMATION STORAGE
Information Patent Application
ANTI-FUSE CELLS WITH BACKSIDE POWER RAILS
- Publication number 20250070018
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- I-Hsin Yang
- G11 - INFORMATION STORAGE
Information Patent Application
ONE-TIME-PROGRAMMABLE MEMORY DEVICES WITH HIGH SECURITY AND METHODS...
- Publication number 20250070054
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Application
EFUSE CELLS WITH BACKSIDE POWER RAILS
- Publication number 20250071984
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- Li-Chin Yu
- G11 - INFORMATION STORAGE
Information Patent Application
ONE-TIME-PROGRAMMABLE MEMORY DEVICES
- Publication number 20250071986
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shao-Ting Wu
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250069677
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT INCLUDING ELECTRONIC FUSE BIT CELL
- Publication number 20250070019
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- Minjeung Kang
- G11 - INFORMATION STORAGE
Information Patent Application
GENERATION OF PHYSICALLY UNCLONABLE FUNCTION USING ONE-TIME-PROGRAM...
- Publication number 20250070053
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuhsiang Chen
- G11 - INFORMATION STORAGE
Information Patent Application
PUF MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20250062251
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Application
ONE-TIME PROGRAMMABLE MEMORY DEVICE AND SEMICONDUCTOR MEMORY DEVICE...
- Publication number 20250054558
- Publication date Feb 13, 2025
- Samsung Electronics Co., Ltd.
- Yeongmuk Cho
- G11 - INFORMATION STORAGE
Information Patent Application
DELAY OF INITIALIZATION AT MEMORY DIE
- Publication number 20250044965
- Publication date Feb 6, 2025
- Micron Technology, Inc.
- James S. Rehmeyer
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Multibit High Density Read Only Memory Using Multiple Reference Biases
- Publication number 20250029669
- Publication date Jan 23, 2025
- Taalas Inc.
- Ljubisa Bajic
- G11 - INFORMATION STORAGE
Information Patent Application
DISTRIBUTED POWER SUPPLY SWITCHING CIRCUIT FOR EFUSE MEMORY
- Publication number 20250029668
- Publication date Jan 23, 2025
- Shanghai Huali Integrated Circuit Corporation
- Chuyi HUANG
- G11 - INFORMATION STORAGE
Information Patent Application
Programmable Read-Only Memory Cell
- Publication number 20250024669
- Publication date Jan 16, 2025
- X-FAB Global Services GmbH
- Rumen Rachinski
- G11 - INFORMATION STORAGE
Information Patent Application
VERTICAL FUSE ARRAY ARCHITECTURE
- Publication number 20250024670
- Publication date Jan 16, 2025
- Micron Technology, Inc.
- Antonino Rigano
- G11 - INFORMATION STORAGE
Information Patent Application
BIT CELL STRUCTURE FOR ONE-TIME-PROGRAMMING
- Publication number 20250014661
- Publication date Jan 9, 2025
- UNITED MICROELECTRONICS CORP.
- Kuo-Hsing Lee
- G11 - INFORMATION STORAGE
Information Patent Application
SMALL-AREA COMMON-VOLTAGE ANTI-FUSE ARRAY
- Publication number 20250014660
- Publication date Jan 9, 2025
- YIELD MICROELECTRONICS CORP.
- YU-TING HUANG
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE WITH SECURE ACCESS KEY AND ASSOCIATED METHODS...
- Publication number 20250013581
- Publication date Jan 9, 2025
- Lodestar Licensing Group, LLC
- Nathaniel J. Meier
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
RE-PROGRAMMABLE INTEGRATED CIRCUIT ARCHITECTURE AND METHOD OF MANUF...
- Publication number 20250006283
- Publication date Jan 2, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Michael Allen Ball
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20250006282
- Publication date Jan 2, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng CHANG
- G11 - INFORMATION STORAGE
Information Patent Application
RADIATION HARDENED E-FUSE MACRO
- Publication number 20240404591
- Publication date Dec 5, 2024
- BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC
- Jason F. Ross
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND INKJET PRINTING ELEMENT SUBSTRATE
- Publication number 20240404612
- Publication date Dec 5, 2024
- Canon Kabushiki Kaisha
- TOSHIO NEGISHI
- B41 - PRINTING LINING MACHINES TYPEWRITERS STAMPS
Information Patent Application
ONE-TIME-PROGRAMMABLE MEMORY DEVICES
- Publication number 20240404611
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chrong Jung Lin
- G11 - INFORMATION STORAGE
Information Patent Application
ONE-TIME-PROGRAMMABLE MEMORY DEVICE
- Publication number 20240397710
- Publication date Nov 28, 2024
- Ememory Technology Inc.
- Lun-Chun CHEN
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR INTEGRATED CIRCUIT
- Publication number 20240386978
- Publication date Nov 21, 2024
- Rohm Co., Ltd.
- Naohiro NOMURA
- G11 - INFORMATION STORAGE
Information Patent Application
METAL FUSE STRUCTURE BY VIA LANDING
- Publication number 20240389312
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hsiang-Wei Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bit Selection for Power Reduction in Stacking Structure During Memo...
- Publication number 20240386979
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Application
Multiple Stack High Voltage Circuit for Memory
- Publication number 20240386919
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Application
HIGH-DENSITY & HIGH-VOLTAGE-TOLERABLE PURE CORE MEMORY CELL
- Publication number 20240386977
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ku-Feng Lin
- G11 - INFORMATION STORAGE

using electrically-fusible links

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Reading circuit for differential OTP memory

One-time programmable memory cell and memory thereof

Merged bit lines for high density memory array

Method of manufacturing semiconductor device

Memory circuit and method of operating same

Systems and methods for a compressed bitcell read-only memory

Anti-fuse memory

Multi-time programmable electronic fuse apparatus

Non-volatile memory device having a fuse type memory cell array

Electronic device and driving method thereof

Semiconductor device

Semiconductor memory devices with diode-connected MOS

Semiconductor memory devices with different doping types

Memory with one-time programmable (OTP) cells

One time programmable (OTP) low power circuits and methods for prov...

Non-volatile memory device including sense amplifier and method for...

Bank design with differential bulk bias in eFuse array

Memory readout circuit and method

Anti-fuse device and method

One-time programmable bitcell for frontside and backside power inte...

Memory devices and methods of manufacturing thereof

Multi-fuse memory cell circuit and method

Fuse link programming cell, programming circuit, control circuit, a...

Semiconductor memory devices with dielectric fin structures

Method and apparatus for enabling multiple return material authoriz...

Memory device data loss prevention

Fuse circuits

Anti-fuse sensing device and operation method thereof

Operating a memory unit using a low-power direct-current (DC) power...

MIM eFuse memory devices and fabrication method thereof

Patents Applicationslast 30 patents

ASYMMETRICAL CHANNEL FLOATING GATE THREE-STATE ONE-TIME PROGRAMMABL...

ONE TIME PROGRAMMABLE (OTP) MAGNETORESISTIVE RANDOM-ACCESS MEMORY (...

ANTI-FUSE CELLS WITH BACKSIDE POWER RAILS

ONE-TIME-PROGRAMMABLE MEMORY DEVICES WITH HIGH SECURITY AND METHODS...

EFUSE CELLS WITH BACKSIDE POWER RAILS

ONE-TIME-PROGRAMMABLE MEMORY DEVICES

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

INTEGRATED CIRCUIT INCLUDING ELECTRONIC FUSE BIT CELL

GENERATION OF PHYSICALLY UNCLONABLE FUNCTION USING ONE-TIME-PROGRAM...

PUF MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF

ONE-TIME PROGRAMMABLE MEMORY DEVICE AND SEMICONDUCTOR MEMORY DEVICE...

DELAY OF INITIALIZATION AT MEMORY DIE

Multibit High Density Read Only Memory Using Multiple Reference Biases

DISTRIBUTED POWER SUPPLY SWITCHING CIRCUIT FOR EFUSE MEMORY

Programmable Read-Only Memory Cell

VERTICAL FUSE ARRAY ARCHITECTURE

BIT CELL STRUCTURE FOR ONE-TIME-PROGRAMMING

SMALL-AREA COMMON-VOLTAGE ANTI-FUSE ARRAY

SEMICONDUCTOR DEVICE WITH SECURE ACCESS KEY AND ASSOCIATED METHODS...

RE-PROGRAMMABLE INTEGRATED CIRCUIT ARCHITECTURE AND METHOD OF MANUF...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

RADIATION HARDENED E-FUSE MACRO

SEMICONDUCTOR DEVICE AND INKJET PRINTING ELEMENT SUBSTRATE

ONE-TIME-PROGRAMMABLE MEMORY DEVICES

ONE-TIME-PROGRAMMABLE MEMORY DEVICE

SEMICONDUCTOR INTEGRATED CIRCUIT

METAL FUSE STRUCTURE BY VIA LANDING

Bit Selection for Power Reduction in Stacking Structure During Memo...

Multiple Stack High Voltage Circuit for Memory

HIGH-DENSITY & HIGH-VOLTAGE-TOLERABLE PURE CORE MEMORY CELL