using electrically-fusible links

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G11C17/16

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GPHYSICS G11Information storage G11CSTATIC STORES G11C17/00Read-only memories programmable only once Semi-permanent stores

Current Industry

G11C17/16using electrically-fusible links

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor structure, memory and method for operating memory
- Patent number 12,272,641
- Issue date Apr 8, 2025
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Yanzhe Tang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing an electrically programmable semiconductor...
- Patent number 12,272,413
- Issue date Apr 8, 2025
- NANYA TECHNOLOGY CORPORATION
- Hsih-Yang Chiu
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertical fuse memory in one-time program memory cells
- Patent number 12,266,408
- Issue date Apr 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sheng-Chih Lai
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory device with parallel programming
- Patent number 12,260,915
- Issue date Mar 25, 2025
- SK keyfoundry Inc.
- Seong Jun Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device for writing to a storage element
- Patent number 12,260,922
- Issue date Mar 25, 2025
- Tower Partners Semiconductor Co., Ltd.
- Hiroshige Hirano
- G11 - INFORMATION STORAGE
Information Patent Grant
Reading circuit for differential OTP memory
- Patent number 12,249,382
- Issue date Mar 11, 2025
- SG MICRO CORP.
- Xuecheng Man
- G11 - INFORMATION STORAGE
Information Patent Grant
One-time programmable memory cell and memory thereof
- Patent number 12,250,809
- Issue date Mar 11, 2025
- Chengdu Analog Circuit Technology Inc
- Dan Ning
- G11 - INFORMATION STORAGE
Information Patent Grant
Merged bit lines for high density memory array
- Patent number 12,243,599
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 12,243,618
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory circuit and method of operating same
- Patent number 12,237,028
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Hao Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems and methods for a compressed bitcell read-only memory
- Patent number 12,237,026
- Issue date Feb 25, 2025
- Advanced Micro Devices, Inc.
- Vaibhav Anand Srivastava
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-time programmable electronic fuse apparatus
- Patent number 12,235,725
- Issue date Feb 25, 2025
- Espressif Systems (Shanghai) Co., Ltd.
- Li Tong
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Anti-fuse memory
- Patent number 12,237,027
- Issue date Feb 25, 2025
- United Microelectronics Corp.
- Chung-Hao Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory device having a fuse type memory cell array
- Patent number 12,230,337
- Issue date Feb 18, 2025
- SK keyfoundry Inc.
- Seongjun Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Electronic device and driving method thereof
- Patent number 12,230,339
- Issue date Feb 18, 2025
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Sungsoo Chi
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 12,230,359
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory devices with diode-connected MOS
- Patent number 12,230,338
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory devices with different doping types
- Patent number 12,230,681
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory with one-time programmable (OTP) cells
- Patent number 12,224,024
- Issue date Feb 11, 2025
- NXP USA, INC.
- Anirban Roy
- G11 - INFORMATION STORAGE
Information Patent Grant
One time programmable (OTP) low power circuits and methods for prov...
- Patent number 12,224,023
- Issue date Feb 11, 2025
- Samsung Electronics Co., Ltd.
- Himanshu Saxena
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory device including sense amplifier and method for...
- Patent number 12,224,025
- Issue date Feb 11, 2025
- SK keyfoundry Inc.
- Seong Jun Park
- G11 - INFORMATION STORAGE
Information Patent Grant
Bank design with differential bulk bias in eFuse array
- Patent number 12,217,798
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory readout circuit and method
- Patent number 12,217,810
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chih-Min Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Anti-fuse device and method
- Patent number 12,219,755
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Min-Shin Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
One-time programmable bitcell for frontside and backside power inte...
- Patent number 12,217,809
- Issue date Feb 4, 2025
- Synopsys, Inc.
- Andrew Edward Horch
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices and methods of manufacturing thereof
- Patent number 12,218,047
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Sheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-fuse memory cell circuit and method
- Patent number 12,211,568
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Fuse link programming cell, programming circuit, control circuit, a...
- Patent number 12,198,771
- Issue date Jan 14, 2025
- Shanghai Huali Integrated Circuit Corporation
- Ying Yan
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory devices with dielectric fin structures
- Patent number 12,198,785
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Sheng Chang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Method and apparatus for enabling multiple return material authoriz...
- Patent number 12,183,412
- Issue date Dec 31, 2024
- Altera Corporation
- Sankaran M. Menon
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
ONE-TIME PROGRAMMABLE MEMORY DEVICES WITH HEATER DEVICES AND METHOD...
- Publication number 20250118383
- Publication date Apr 10, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Application
Multi-Fuse Memory Cell Circuit and Method
- Publication number 20250118384
- Publication date Apr 10, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Application
ONE-TIME-PROGRAMMABLE MEMORY DEVICES AND METHODS OF MANUFACTURING T...
- Publication number 20250105173
- Publication date Mar 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMABLE DEVICE, PROGRAMMABLE DEVICE ARRAY, OPERATION METHODS T...
- Publication number 20250107076
- Publication date Mar 27, 2025
- CXMT Corporation
- Huande JIANG
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY CIRCUIT AND METHOD
- Publication number 20250104785
- Publication date Mar 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Gu-Huan LI
- G11 - INFORMATION STORAGE
Information Patent Application
GENERATION OF PHYSICALLY UNCLONABLE FUNCTION USING ONE-TIME-PROGRAM...
- Publication number 20250096160
- Publication date Mar 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE TRANSFER DEVICE AND A MEMORY DEVICE INCLUDING THE SAME
- Publication number 20250095761
- Publication date Mar 20, 2025
- Samsung Electronics Co., Ltd.
- Soung Hoon Sim
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20250087285
- Publication date Mar 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng CHANG
- G11 - INFORMATION STORAGE
Information Patent Application
MIM EFUSE MEMORY DEVICES AND FABRICATION METHOD THEREOF
- Publication number 20250087286
- Publication date Mar 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICES WITH STACKING CIRCUITS AND METHODS OF OPERATING THEREOF
- Publication number 20250087287
- Publication date Mar 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Min-Shin Wu
- G11 - INFORMATION STORAGE
Information Patent Application
ASYMMETRICAL CHANNEL FLOATING GATE THREE-STATE ONE-TIME PROGRAMMABL...
- Publication number 20250081449
- Publication date Mar 6, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Jack Qian
- G11 - INFORMATION STORAGE
Information Patent Application
ONE TIME PROGRAMMABLE (OTP) MAGNETORESISTIVE RANDOM-ACCESS MEMORY (...
- Publication number 20250078892
- Publication date Mar 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Hao Lee
- G11 - INFORMATION STORAGE
Information Patent Application
ANTI-FUSE CELLS WITH BACKSIDE POWER RAILS
- Publication number 20250070018
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- I-Hsin Yang
- G11 - INFORMATION STORAGE
Information Patent Application
ONE-TIME-PROGRAMMABLE MEMORY DEVICES WITH HIGH SECURITY AND METHODS...
- Publication number 20250070054
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Application
EFUSE CELLS WITH BACKSIDE POWER RAILS
- Publication number 20250071984
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- Li-Chin Yu
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250069677
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT INCLUDING ELECTRONIC FUSE BIT CELL
- Publication number 20250070019
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- Minjeung Kang
- G11 - INFORMATION STORAGE
Information Patent Application
GENERATION OF PHYSICALLY UNCLONABLE FUNCTION USING ONE-TIME-PROGRAM...
- Publication number 20250070053
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yuhsiang Chen
- G11 - INFORMATION STORAGE
Information Patent Application
ONE-TIME-PROGRAMMABLE MEMORY DEVICES
- Publication number 20250071986
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Shao-Ting Wu
- G11 - INFORMATION STORAGE
Information Patent Application
PUF MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20250062251
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Application
ONE-TIME PROGRAMMABLE MEMORY DEVICE AND SEMICONDUCTOR MEMORY DEVICE...
- Publication number 20250054558
- Publication date Feb 13, 2025
- Samsung Electronics Co., Ltd.
- Yeongmuk Cho
- G11 - INFORMATION STORAGE
Information Patent Application
DELAY OF INITIALIZATION AT MEMORY DIE
- Publication number 20250044965
- Publication date Feb 6, 2025
- Micron Technology, Inc.
- James S. Rehmeyer
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Multibit High Density Read Only Memory Using Multiple Reference Biases
- Publication number 20250029669
- Publication date Jan 23, 2025
- Taalas Inc.
- Ljubisa Bajic
- G11 - INFORMATION STORAGE
Information Patent Application
DISTRIBUTED POWER SUPPLY SWITCHING CIRCUIT FOR EFUSE MEMORY
- Publication number 20250029668
- Publication date Jan 23, 2025
- Shanghai Huali Integrated Circuit Corporation
- Chuyi HUANG
- G11 - INFORMATION STORAGE
Information Patent Application
Programmable Read-Only Memory Cell
- Publication number 20250024669
- Publication date Jan 16, 2025
- X-FAB Global Services GmbH
- Rumen Rachinski
- G11 - INFORMATION STORAGE
Information Patent Application
VERTICAL FUSE ARRAY ARCHITECTURE
- Publication number 20250024670
- Publication date Jan 16, 2025
- Micron Technology, Inc.
- Antonino Rigano
- G11 - INFORMATION STORAGE
Information Patent Application
BIT CELL STRUCTURE FOR ONE-TIME-PROGRAMMING
- Publication number 20250014661
- Publication date Jan 9, 2025
- UNITED MICROELECTRONICS CORP.
- Kuo-Hsing Lee
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE WITH SECURE ACCESS KEY AND ASSOCIATED METHODS...
- Publication number 20250013581
- Publication date Jan 9, 2025
- Lodestar Licensing Group, LLC
- Nathaniel J. Meier
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SMALL-AREA COMMON-VOLTAGE ANTI-FUSE ARRAY
- Publication number 20250014660
- Publication date Jan 9, 2025
- YIELD MICROELECTRONICS CORP.
- YU-TING HUANG
- G11 - INFORMATION STORAGE
Information Patent Application
RE-PROGRAMMABLE INTEGRATED CIRCUIT ARCHITECTURE AND METHOD OF MANUF...
- Publication number 20250006283
- Publication date Jan 2, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Michael Allen Ball
- G11 - INFORMATION STORAGE

using electrically-fusible links

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor structure, memory and method for operating memory

Method of manufacturing an electrically programmable semiconductor...

Vertical fuse memory in one-time program memory cells

Non-volatile memory device with parallel programming

Semiconductor device for writing to a storage element

Reading circuit for differential OTP memory

One-time programmable memory cell and memory thereof

Merged bit lines for high density memory array

Method of manufacturing semiconductor device

Memory circuit and method of operating same

Systems and methods for a compressed bitcell read-only memory

Multi-time programmable electronic fuse apparatus

Anti-fuse memory

Non-volatile memory device having a fuse type memory cell array

Electronic device and driving method thereof

Semiconductor device

Semiconductor memory devices with diode-connected MOS

Semiconductor memory devices with different doping types

Memory with one-time programmable (OTP) cells

One time programmable (OTP) low power circuits and methods for prov...

Non-volatile memory device including sense amplifier and method for...

Bank design with differential bulk bias in eFuse array

Memory readout circuit and method

Anti-fuse device and method

One-time programmable bitcell for frontside and backside power inte...

Memory devices and methods of manufacturing thereof

Multi-fuse memory cell circuit and method

Fuse link programming cell, programming circuit, control circuit, a...

Semiconductor memory devices with dielectric fin structures

Method and apparatus for enabling multiple return material authoriz...

Patents Applicationslast 30 patents

ONE-TIME PROGRAMMABLE MEMORY DEVICES WITH HEATER DEVICES AND METHOD...

Multi-Fuse Memory Cell Circuit and Method

ONE-TIME-PROGRAMMABLE MEMORY DEVICES AND METHODS OF MANUFACTURING T...

PROGRAMMABLE DEVICE, PROGRAMMABLE DEVICE ARRAY, OPERATION METHODS T...

NON-VOLATILE MEMORY CIRCUIT AND METHOD

GENERATION OF PHYSICALLY UNCLONABLE FUNCTION USING ONE-TIME-PROGRAM...

HIGH VOLTAGE TRANSFER DEVICE AND A MEMORY DEVICE INCLUDING THE SAME

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

MIM EFUSE MEMORY DEVICES AND FABRICATION METHOD THEREOF

MEMORY DEVICES WITH STACKING CIRCUITS AND METHODS OF OPERATING THEREOF

ASYMMETRICAL CHANNEL FLOATING GATE THREE-STATE ONE-TIME PROGRAMMABL...

ONE TIME PROGRAMMABLE (OTP) MAGNETORESISTIVE RANDOM-ACCESS MEMORY (...

ANTI-FUSE CELLS WITH BACKSIDE POWER RAILS

ONE-TIME-PROGRAMMABLE MEMORY DEVICES WITH HIGH SECURITY AND METHODS...

EFUSE CELLS WITH BACKSIDE POWER RAILS

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

INTEGRATED CIRCUIT INCLUDING ELECTRONIC FUSE BIT CELL

GENERATION OF PHYSICALLY UNCLONABLE FUNCTION USING ONE-TIME-PROGRAM...

ONE-TIME-PROGRAMMABLE MEMORY DEVICES

PUF MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF

ONE-TIME PROGRAMMABLE MEMORY DEVICE AND SEMICONDUCTOR MEMORY DEVICE...

DELAY OF INITIALIZATION AT MEMORY DIE

Multibit High Density Read Only Memory Using Multiple Reference Biases

DISTRIBUTED POWER SUPPLY SWITCHING CIRCUIT FOR EFUSE MEMORY

Programmable Read-Only Memory Cell

VERTICAL FUSE ARRAY ARCHITECTURE

BIT CELL STRUCTURE FOR ONE-TIME-PROGRAMMING

SEMICONDUCTOR DEVICE WITH SECURE ACCESS KEY AND ASSOCIATED METHODS...

SMALL-AREA COMMON-VOLTAGE ANTI-FUSE ARRAY

RE-PROGRAMMABLE INTEGRATED CIRCUIT ARCHITECTURE AND METHOD OF MANUF...