using electrically-fusible links

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CPC
G11C17/16

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C17/00Read-only memories programmable only once Semi-permanent stores

Current Industry

G11C17/16using electrically-fusible links

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Anti-fuse address decoding circuit, operation method, and memory
- Patent number 12,362,025
- Issue date Jul 15, 2025
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Rumin Ji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with secure access key and associated methods...
- Patent number 12,360,921
- Issue date Jul 15, 2025
- Brenton P. Van Leeuwen
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device and method of operating the same
- Patent number 12,353,335
- Issue date Jul 8, 2025
- Samsung Electronics Co., Ltd.
- Sohyun Park
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Sensing amplifier circuit and memory device
- Patent number 12,354,699
- Issue date Jul 8, 2025
- Vanguard International Semiconductor Corporation
- Po-Yuan Tang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and operating method of the same
- Patent number 12,347,505
- Issue date Jul 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Gu-Huan Li
- G11 - INFORMATION STORAGE
Information Patent Grant
One-time-programmable memory devices
- Patent number 12,347,504
- Issue date Jul 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chrong Jung Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor structure and method for manufacturing same, memory a...
- Patent number 12,349,342
- Issue date Jul 1, 2025
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Yanzhe Tang
- G11 - INFORMATION STORAGE
Information Patent Grant
Multilevel voltage detector circuit
- Patent number 12,340,854
- Issue date Jun 24, 2025
- Shanghai Huali Integrated Circuit Corporation
- Yu Jia
- G01 - MEASURING TESTING
Information Patent Grant
Method for protecting anti-fuse cell
- Patent number 12,341,093
- Issue date Jun 24, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Meng-Sheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Small-area common-voltage anti-fuse array
- Patent number 12,327,597
- Issue date Jun 10, 2025
- Yield Microelectronics Corp.
- Yu-Ting Huang
- G11 - INFORMATION STORAGE
Information Patent Grant
Ultra-low power, high speed poly fuse eprom
- Patent number 12,327,598
- Issue date Jun 10, 2025
- Texas Instruments Incorporated
- Likhita Chandrashekara
- G11 - INFORMATION STORAGE
Information Patent Grant
Simulation test model for anti-fuse circuit and circuit testing method
- Patent number 12,322,459
- Issue date Jun 3, 2025
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Qian Xu
- G11 - INFORMATION STORAGE
Information Patent Grant
Metal fuse structure by via landing
- Patent number 12,324,149
- Issue date Jun 3, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsiang-Wei Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Anti-fuse circuit and anti-fuse unit programming state real-time ve...
- Patent number 12,322,460
- Issue date Jun 3, 2025
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Jiarui Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Dielectric film based one-time programmable (OTP) memory cell
- Patent number 12,322,461
- Issue date Jun 3, 2025
- QUALCOMM Incorporated
- Abhijeet Paul
- G11 - INFORMATION STORAGE
Information Patent Grant
Programmable memory and method for driving programmable memory
- Patent number 12,322,462
- Issue date Jun 3, 2025
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Rumin Ji
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor chip with fuse structure in scribe lane and method of...
- Patent number 12,315,800
- Issue date May 27, 2025
- Samsung Electronics Co., Ltd.
- Donghwa Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device with programmable feature
- Patent number 12,315,578
- Issue date May 27, 2025
- NANYA TECHNOLOGY CORPORATION
- Hsih-Yang Chiu
- G11 - INFORMATION STORAGE
Information Patent Grant
One-time programmable (OTP) memory and method of operating the same
- Patent number 12,308,078
- Issue date May 20, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Kuo-Pin Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Anti-fuse storage layout and circuit thereof, and anti-fuse memory...
- Patent number 12,308,316
- Issue date May 20, 2025
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Rumin Ji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit (IC) including a level shifter having fail-safe...
- Patent number 12,294,365
- Issue date May 6, 2025
- Texas Instruments Incorporated
- Niharika Khare
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory circuit and method of operating same
- Patent number 12,293,799
- Issue date May 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
One time programming memory cell with fin field-effect transistor u...
- Patent number 12,289,883
- Issue date Apr 29, 2025
- eMemory Technology Inc.
- Lun-Chun Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Electronic fuse circuit and method for electronic fuse circuit
- Patent number 12,283,329
- Issue date Apr 22, 2025
- United Microelectronics Corp.
- Chia Wei Ho
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices, semiconductor devices, and methods of operations a...
- Patent number 12,284,804
- Issue date Apr 22, 2025
- Taiwan Semiconductor Manufacturing Company Ltd.
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Grant
Anti-fuse cell structure, anti-fuse array, operation method for ant...
- Patent number 12,277,981
- Issue date Apr 15, 2025
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Chuangming Hou
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device structure having fuse elements
- Patent number 12,279,418
- Issue date Apr 15, 2025
- NANYA TECHNOLOGY CORPORATION
- Wu-Der Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor storage apparatus and printing apparatus
- Patent number 12,275,241
- Issue date Apr 15, 2025
- Canon Kabushiki Kaisha
- Takaaki Saito
- G11 - INFORMATION STORAGE
Information Patent Grant
Verifiable one-time programmable memory device
- Patent number 12,277,982
- Issue date Apr 15, 2025
- Telefonaktiebolaget LM Ericsson (publ)
- Niklas Lindskog
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor structure, memory and method for operating memory
- Patent number 12,272,641
- Issue date Apr 8, 2025
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Yanzhe Tang
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE
- Publication number 20250232825
- Publication date Jul 17, 2025
- NANYA TECHNOLOGY CORPORATION
- Wu-Der YANG
- G11 - INFORMATION STORAGE
Information Patent Application
ONE-TIME PROGRAMMABLE BITCELL WITH A THERMALLY ENHANCED RUPTURE
- Publication number 20250234529
- Publication date Jul 17, 2025
- Synopsys, Inc.
- Andrew Edward Horch
- G11 - INFORMATION STORAGE
Information Patent Application
CIRCUITS FOR PROTECTING AGAINST ACCIDENTAL FUSE ACTIVATION
- Publication number 20250218936
- Publication date Jul 3, 2025
- Skyworks Solutions, Inc.
- Bo Zhou
- G11 - INFORMATION STORAGE
Information Patent Application
POWER CONDITIONING CIRCUIT FOR IN-FIELD FUSE PROGRAMMING
- Publication number 20250210120
- Publication date Jun 26, 2025
- Intel Corporation
- Zhanping Chen
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND METHOD FOR OPERATING THE SAME
- Publication number 20250210097
- Publication date Jun 26, 2025
- NANYA TECHNOLOGY CORPORATION
- Chien Yu CHEN
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STRUCTURE, MEMORY AND METHOD FOR OPERATING MEMORY
- Publication number 20250201706
- Publication date Jun 19, 2025
- CHANGXIN MEMORY TECHNOLOGIES, INC
- Yanzhe TANG
- G11 - INFORMATION STORAGE
Information Patent Application
VERTICAL FUSE MEMORY IN ONE-TIME PROGRAM MEMORY CELLS
- Publication number 20250201321
- Publication date Jun 19, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sheng-Chih LAI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CIRCUIT AND METHOD OF OPERATING SAME
- Publication number 20250191667
- Publication date Jun 12, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Hao CHANG
- G11 - INFORMATION STORAGE
Information Patent Application
MERGED BIT LINES FOR HIGH DENSITY MEMORY ARRAY
- Publication number 20250191666
- Publication date Jun 12, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF
- Publication number 20250183165
- Publication date Jun 5, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Application
ANTI-FUSE DEVICE AND METHOD
- Publication number 20250185239
- Publication date Jun 5, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Min-Shin WU
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES WITH DIODE-CONNECTED MOS
- Publication number 20250182835
- Publication date Jun 5, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Application
Novel Bank Design with Differential Bulk Bias in eFuse Array
- Publication number 20250174275
- Publication date May 29, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES WITH DIFFERENT DOPING TYPES
- Publication number 20250169142
- Publication date May 22, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Application
SENSING AMPLIFIER CIRCUIT AND MEMORY DEVICE
- Publication number 20250149071
- Publication date May 8, 2025
- Vanguard International Semiconductor Corporation
- Po-Yuan TANG
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND PROGRAMMABLE MACRO CIRCUIT
- Publication number 20250149086
- Publication date May 8, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- YU-WEI LIN
- G11 - INFORMATION STORAGE
Information Patent Application
VOLTAGE REGULATION FOR MEMORY ARRAY TEST PROCEDURES
- Publication number 20250149101
- Publication date May 8, 2025
- Micron Technology, Inc.
- Anjana Karthik Gudipati
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250149073
- Publication date May 8, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Meng-Sheng CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY DEVICE HAVING A FUSE TYPE MEMORY CELL ARRAY
- Publication number 20250140328
- Publication date May 1, 2025
- SK keyfoundry Inc.
- Seongjun PARK
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES WITH DIELECTRIC FIN STRUCTURES
- Publication number 20250131952
- Publication date Apr 24, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng Chang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY DEVICE AND METHOD FOR OPERATING THE SAME
- Publication number 20250131967
- Publication date Apr 24, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jenn-Gwo HWU
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY DEVICE INCLUDING SENSE AMPLIFIER AND METHOD FOR...
- Publication number 20250124993
- Publication date Apr 17, 2025
- SK keyfoundry Inc.
- Seong Jun PARK
- G11 - INFORMATION STORAGE
Information Patent Application
ONE-TIME PROGRAMMABLE BITCELL FOR FRONTSIDE AND BACKSIDE POWER INTE...
- Publication number 20250124992
- Publication date Apr 17, 2025
- Synopsys, Inc.
- Andrew Edward Horch
- G11 - INFORMATION STORAGE
Information Patent Application
ONE-TIME PROGRAMMABLE MEMORY DEVICES WITH HEATER DEVICES AND METHOD...
- Publication number 20250118383
- Publication date Apr 10, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Application
Multi-Fuse Memory Cell Circuit and Method
- Publication number 20250118384
- Publication date Apr 10, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Application
ONE-TIME-PROGRAMMABLE MEMORY DEVICES AND METHODS OF MANUFACTURING T...
- Publication number 20250105173
- Publication date Mar 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMABLE DEVICE, PROGRAMMABLE DEVICE ARRAY, OPERATION METHODS T...
- Publication number 20250107076
- Publication date Mar 27, 2025
- CXMT Corporation
- Huande JIANG
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY CIRCUIT AND METHOD
- Publication number 20250104785
- Publication date Mar 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Gu-Huan LI
- G11 - INFORMATION STORAGE
Information Patent Application
GENERATION OF PHYSICALLY UNCLONABLE FUNCTION USING ONE-TIME-PROGRAM...
- Publication number 20250096160
- Publication date Mar 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE TRANSFER DEVICE AND A MEMORY DEVICE INCLUDING THE SAME
- Publication number 20250095761
- Publication date Mar 20, 2025
- Samsung Electronics Co., Ltd.
- Soung Hoon Sim
- G11 - INFORMATION STORAGE

using electrically-fusible links

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Anti-fuse address decoding circuit, operation method, and memory

Semiconductor device with secure access key and associated methods...

Semiconductor device and method of operating the same

Sensing amplifier circuit and memory device

Memory device and operating method of the same

One-time-programmable memory devices

Semiconductor structure and method for manufacturing same, memory a...

Multilevel voltage detector circuit

Method for protecting anti-fuse cell

Small-area common-voltage anti-fuse array

Ultra-low power, high speed poly fuse eprom

Simulation test model for anti-fuse circuit and circuit testing method

Metal fuse structure by via landing

Anti-fuse circuit and anti-fuse unit programming state real-time ve...

Dielectric film based one-time programmable (OTP) memory cell

Programmable memory and method for driving programmable memory

Semiconductor chip with fuse structure in scribe lane and method of...

Semiconductor device with programmable feature

One-time programmable (OTP) memory and method of operating the same

Anti-fuse storage layout and circuit thereof, and anti-fuse memory...

Integrated circuit (IC) including a level shifter having fail-safe...

Memory circuit and method of operating same

One time programming memory cell with fin field-effect transistor u...

Electronic fuse circuit and method for electronic fuse circuit

Memory devices, semiconductor devices, and methods of operations a...

Anti-fuse cell structure, anti-fuse array, operation method for ant...

Semiconductor device structure having fuse elements

Semiconductor storage apparatus and printing apparatus

Verifiable one-time programmable memory device

Semiconductor structure, memory and method for operating memory

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE STRUCTURE

ONE-TIME PROGRAMMABLE BITCELL WITH A THERMALLY ENHANCED RUPTURE

CIRCUITS FOR PROTECTING AGAINST ACCIDENTAL FUSE ACTIVATION

POWER CONDITIONING CIRCUIT FOR IN-FIELD FUSE PROGRAMMING

MEMORY DEVICE AND METHOD FOR OPERATING THE SAME

SEMICONDUCTOR STRUCTURE, MEMORY AND METHOD FOR OPERATING MEMORY

VERTICAL FUSE MEMORY IN ONE-TIME PROGRAM MEMORY CELLS

MEMORY CIRCUIT AND METHOD OF OPERATING SAME

MERGED BIT LINES FOR HIGH DENSITY MEMORY ARRAY

MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF

ANTI-FUSE DEVICE AND METHOD

SEMICONDUCTOR MEMORY DEVICES WITH DIODE-CONNECTED MOS

Novel Bank Design with Differential Bulk Bias in eFuse Array

SEMICONDUCTOR MEMORY DEVICES WITH DIFFERENT DOPING TYPES

SENSING AMPLIFIER CIRCUIT AND MEMORY DEVICE

SEMICONDUCTOR DEVICE AND PROGRAMMABLE MACRO CIRCUIT

VOLTAGE REGULATION FOR MEMORY ARRAY TEST PROCEDURES

SEMICONDUCTOR DEVICE

NON-VOLATILE MEMORY DEVICE HAVING A FUSE TYPE MEMORY CELL ARRAY

SEMICONDUCTOR MEMORY DEVICES WITH DIELECTRIC FIN STRUCTURES

MEMORY DEVICE AND METHOD FOR OPERATING THE SAME

NON-VOLATILE MEMORY DEVICE INCLUDING SENSE AMPLIFIER AND METHOD FOR...

ONE-TIME PROGRAMMABLE BITCELL FOR FRONTSIDE AND BACKSIDE POWER INTE...

ONE-TIME PROGRAMMABLE MEMORY DEVICES WITH HEATER DEVICES AND METHOD...

Multi-Fuse Memory Cell Circuit and Method

ONE-TIME-PROGRAMMABLE MEMORY DEVICES AND METHODS OF MANUFACTURING T...

PROGRAMMABLE DEVICE, PROGRAMMABLE DEVICE ARRAY, OPERATION METHODS T...

NON-VOLATILE MEMORY CIRCUIT AND METHOD

GENERATION OF PHYSICALLY UNCLONABLE FUNCTION USING ONE-TIME-PROGRAM...

HIGH VOLTAGE TRANSFER DEVICE AND A MEMORY DEVICE INCLUDING THE SAME