Claims
- 1. A semiconductor device comprising a semiconductor element sealed with an epoxy resin molding material, the epoxy resin molding material comprising (A) an epoxy resin having at least two epoxy groups per molecule; (B) a compound having at least two phenolic hydroxyl groups per molecule; and (C) a powder which (1) has a structure comprising a core of solid silicone polymer and a shell of organic polymer, in a weight ratio of solid silicone polymer organic polymer of from 1:1 to 5:1, (2) the solid silicone polymer comprising 80-99.5 mol % of a (RR'SiO.sub.2/2) unit and 0.5 to 20 mol % of at least one of a (RSiO.sub.3/2) unit and a (SiO.sub.4/2) unit as a crosslinking agent, wherein R is an alkyl group of 6 or less carbon atoms, an aryl group or a functional group having a terminal carbon-carbon double-bond, and R' is an alkyl group of 6 or less carbon atoms or an aryl group, and wherein the solid silicone polymer contains 1-10 mol % of siloxane units with carbon-carbon double bond based on the total units of the solid silicone polymer.
- 2. The semiconductor device as claimed in claim 1, wherein the organic polymer in the component (C) is a compound synthesized by a vinyl polymerization.
- 3. The semiconductor device as claimed in claim 2, wherein the compound synthesized by the vinyl polymerization is an acrylic homopolymer resin or an acrylic copolymer resin.
- 4. The semiconductor device as claimed in claim 2, wherein the compound synthesized by the vinyl polymerization is a vinyl ester resin having an aromatic ring.
- 5. The semiconductor device as claimed in claim 1, wherein at least 60% by weight of the epoxy resin (A) is an epoxy resin derived from a substituted or a non-substituted biphenol.
- 6. The semiconductor device as claimed in claim 2, wherein at least 60% by weight of the epoxy resin (A) is an epoxy resin derived from a substituted or a non-substituted biphenol.
- 7. The semiconductor device as claimed in claim 3, wherein at least 60% by weight of the epoxy resin (A) is an epoxy resin derived from a substituted or a non-substituted biphenol.
- 8. The semiconductor device as claimed in claim 4, wherein at least 60% by weight of the epoxy resin (A) is an epoxy resin derived from a substituted or a non-substituted biphenol.
- 9. The semiconductor device as claimed in claim 1, wherein at least one of the epoxy resin (A) and the compound (B) contain a compound having a naphthalene ring.
- 10. The semiconductor device as claimed in claim 2, wherein at least one of the epoxy resin (A) and the compound (B) contain a compound having a naphthalene ring.
- 11. The semiconductor device as claimed in claim 5, wherein at least one of the epoxy resin (A) and the compound (B) contain a compound having a naphthalene ring.
- 12. The semiconductor device as claimed in claim 6, wherein at least one of the epoxy resin (A) and the compound (B) contain a compound having a naphthalene ring.
- 13. The semiconductor device as claimed in claim 1, wherein at least one of the epoxy resin (A) and the compound (B) contain a compound having a saturated aliphatic ring.
- 14. The semiconductor device as claimed in claim 2, wherein at least one of the epoxy resin (A) and the compound (B) contain a compound having a saturated aliphatic ring.
- 15. The semiconductor device as claimed in claim 5, wherein at least one of the epoxy resin (A) and the compound (B) contain a compound having a saturated aliphatic ring.
- 16. The semiconductor device as claimed in claim 6, wherein at least one of the epoxy resin (A) and the compound (B) contain a compound having a saturated aliphatic ring.
- 17. The semiconductor device as claimed in claim 1, wherein said at least one of the (RSiO.sub.3/2) unit and the (SiO.sub.4/2) unit is included in the solid silicone polymer in an amount of 1 to 20 mol % of the solid silicone polymer.
- 18. The semiconductor device as claimed in claim 1, wherein said at least one of the (RSiO.sub.3/2) unit and the (SiO.sub.4/2) unit is included in the solid silicone polymer in an amount of 2-20 mol % of the solid silicone polymer.
- 19. The semiconductor device as claimed in claim 1, wherein the solid silicone polymer includes 2-10 mol % of the (RSiO.sub.3/2) unit.
- 20. The semiconductor device as claimed in claim 1, wherein the powder has an average primary particle size in a range of 0.05 to 1.0 .mu.m.
- 21. The semiconductor device as claimed in claim 1, wherein the powder has an average primary particle size in a range of 0.05 to 0.5 .mu.m.
- 22. The semiconductor device as claimed in claim 1, wherein R' is methyl.
- 23. The semiconductor device as claimed in claim 1, wherein the semiconductor element is a large-scale integrated circuit.
- 24. The semiconductor device as claimed in claim 1, wherein said epoxy resin having at least two epoxy groups per molecule includes a cresol novolac epoxy resin; wherein said compound having at least two phenolic hydroxyl groups per molecule is a phenol novolac resin; and wherein the solid silicone polymer includes a polymerization product of 90-99 mol % of octamethylcyclotetrasiloxane, up to 8 mol % of methyltrimethoxysilane and 1-2 mol % of methacryloxypropyltrimethoxysilane, and the organic polymer is polymethylmethacrylate.
- 25. The semiconductor device as claimed in claim 24, wherein said epoxy resin having at least two epoxy groups per molecule includes o-cresol novolac epoxy resin.
Priority Claims (1)
Number |
Date |
Country |
Kind |
6-244069 |
Oct 1994 |
JPX |
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Parent Case Info
This application is a Divisional application of application Ser. No. 08/536,141, filed Sep. 29, 1995, U.S. Pat. No. 5,739,217, the contents of which are incorporated herein by reference in their entirety.
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Divisions (1)
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Number |
Date |
Country |
Parent |
536141 |
Sep 1995 |
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