SEMICONDUCTOR STORAGE DEVICE

Abstract

According to one embodiment, a semiconductor storage device includes a stacked body with conductive layers which are spaced apart one from another along a first direction. A pillar structure extends in the first direction through the conductive layers and has protruding parts, each of which protrudes outwardly from the pillar structure towards a conductive layer. The pillar structure includes a semiconductor layer, a tunnel insulating layers separately in each of the protruding parts between the semiconductor layer and the conductive layer. There is no tunnel insulating layer in the region between the adjacent protruding parts in the first direction. A charge storage layer is also separately in each protruding part between the tunnel insulating layer and the conductive layer.

Description

Claims

1. A semiconductor storage device comprising: a stacked body including a plurality of conductive layers which are spaced apart one from another along a first direction; anda pillar structure extending in the first direction through the plurality of conductive layers and including a plurality of protruding parts, each of which protrudes outwardly from the pillar structure towards a corresponding one of the conductive layers in the stacked body, wherein the pillar structure includes: a semiconductor layer that extends in the first direction;a plurality of tunnel insulating layers, each of which is in one of the protruding parts between the semiconductor layer and the corresponding one of the conductive layers, but is not in a region between adjacent protruding parts in the first direction, each of the tunnel insulating layers comprising a silicon oxynitride; anda plurality of charge storage layers, each of which is in one of the protruding parts between the tunnel insulating layer of the protruding part and the corresponding one of the conductive layers, but is not in the region between adjacent protruding parts.

2. The semiconductor storage device according to claim 1, wherein the pillar structure further includes: a block insulating layer including a plurality of first parts, each of which is in one of the protruding parts and covers outer surfaces of a structure including the tunnel insulating layer and the charge storage layer of the protruding part.

3. The semiconductor storage device according to claim 2, wherein the block insulating layer further includes a plurality of second parts, each of which is between adjacent first parts in the first direction and extends along the semiconductor layer in the first direction.

4. The semiconductor storage device according to claim 2, wherein the block insulating layer directly contacts the semiconductor layer.

5. The semiconductor storage device according to claim 1, wherein the semiconductor layer extends substantially linearly in the first direction from a region of the pillar structure facing one of the plurality of conductive layers to the region between adjacent protruding parts.

6. The semiconductor storage device according to claim 1, wherein part of the semiconductor layer is in each of the plurality of protruding parts.

7. The semiconductor storage device according to claim 1, wherein the plurality of charge storage layers comprise a silicon nitride.

8. The semiconductor storage device according to claim 2, wherein an interlayer insulating layer is between each adjacent pair of conductive layers in the plurality of conductive layers in the first direction.

9. The semiconductor storage device according to claim 8, wherein the block insulating layer is denser than the interlayer insulating layer.

10. The semiconductor storage device according to claim 8, further comprising: a metal oxide layer between the block insulating layer and each conductive layer.

11. A semiconductor storage device, comprising: a plurality of conductive layers stacked one on another in a first direction;a pillar structure extending in the first direction through the plurality of conductive layers and including a plurality of protruding parts, each of which protrudes outwardly from the pillar structure towards a corresponding one of the conductive layers, wherein the pillar structure includes: a semiconductor layer that extends in the first direction;a plurality of tunnel insulating layers, each of which is in one of the protruding parts between the semiconductor layer and the corresponding one of the conductive layers, comprises silicon, oxygen, and nitrogen and is separated from tunnel insulating layers in adjacent protruding parts in the first direction; anda plurality of charge storage layers, each of which is in one of the protruding parts between the tunnel insulating layer of the protruding part and the corresponding one of the conductive layers, and is separated from charge storage layers in adjacent protruding parts.

12. The semiconductor storage device according to claim 11, wherein the pillar structure further includes: a block insulating layer including a plurality of first parts, each of which is in one of the protruding parts and covers outer surfaces of a structure including the tunnel insulating layer and the charge storage layer of the protruding part.

13. The semiconductor storage device according to claim 12, wherein the block insulating layer further includes a plurality of second parts, each of which is between adjacent first parts in the first direction and extends along the semiconductor layer in the first direction.

14. The semiconductor storage device according to claim 12, wherein the block insulating layer directly contacts the semiconductor layer.

15. The semiconductor storage device according to claim 11, wherein the semiconductor layer extends substantially linearly in the first direction from a region of the pillar structure facing one of the plurality of conductive layers to the region between adjacent protruding parts.

16. The semiconductor storage device according to claim 11, wherein part of the semiconductor layer is in each of the plurality of protruding parts.

17. The semiconductor storage device according to claim 11, wherein the plurality of charge storage layers are charge trap layers in the protruding parts.

18. The semiconductor storage device according to claim 12, wherein an interlayer insulating layer is between each adjacent pair of conductive layers in the plurality of conductive layers in the first direction.

19. The semiconductor storage device according to claim 18, wherein the block insulating layer is denser than the interlayer insulating layer.

20. The semiconductor storage device according to claim 18, further comprising: a metal oxide layer between the block insulating layer and each conductive layer.