Claims
- 1. A semiconductor device including an active semiconductor film formed on an insulating substrate, at least a channel region of the active semiconductor film having a quasi-monocrystal state, which is a crystal state containing only grain boundaries having inclination angles of not more than 90 to a current direction.
- 2. A semiconductor device including an active semiconductor film formed on an insulating substrate,
at least a channel region of the active semiconductor film having a polycrystal state which is formed of circular large-diameter crystal grain, a radius L of the circular large-diameter crystal grain being larger than 250 nm, and the radius L being larger than W/4 when a width of the channel is represented by W.
- 3. A semiconductor device according to claim 1, wherein the active semiconductor film has a smaller width at the channel region than the rest part thereof.
- 4. A semiconductor device according to claim 2, wherein the active semiconductor film has a smaller width at the channel region than the rest part thereof.
- 5. A semiconductor device according to claim 1, wherein
a source/drain region of the active semiconductor film includes one part formed of micro-diameter crystal grains and another part formed of circular large-diameter crystal grains, a radius L of the circular large-diameter crystal grain is larger than 250 nm, and the radius L is larger than W/4 when a width of the channel is represented by W.
- 6. A semiconductor device according to claim 2, wherein
a source/drain region of the active semiconductor film includes one part formed of micro-diameter crystal grains and another part formed of circular large-diameter crystal grains, a radius L of the circular large-diameter crystal grain is larger than 250 nm, and the radius L is larger than W/4 when a width of the channel is represented by W.
- 7. A semiconductor device according to claim 1, wherein the channel region has a width-reduced part formed in.
- 8. A semiconductor device according to claim 2, wherein the channel region has a width-reduced part formed in.
- 9. A semiconductor thin film including a width-reduced part, at least the width-reduced part having a quasi-monocrystal state, which is a crystal state including grain boundaries having an inclination angles of not more than 90 to a current direction.
Priority Claims (4)
Number |
Date |
Country |
Kind |
10-197316/1998 |
Jul 1998 |
JP |
|
10-346879/1998 |
Dec 1998 |
JP |
|
11-245323/1999 |
Aug 1999 |
JP |
|
2000-178578/2000 |
Jun 2000 |
JP |
|
CROSS REFERENCE TO RELATED APPLICATION
[0001] This application is a division of Ser. No. 09/650,641, filed Aug. 30, 2000, which is a continuation-in-part of Ser. No. 09/327,572, filed on Jun. 8, 1999.
Divisions (1)
|
Number |
Date |
Country |
Parent |
09650641 |
Aug 2000 |
US |
Child |
10419760 |
Apr 2003 |
US |
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
09327572 |
Jun 1999 |
US |
Child |
09650641 |
Aug 2000 |
US |