Claims
- 1. A method of manufacturing a semiconductor wafer comprising the steps of:
- providing a silicon semiconductor substrate;
- forming a carbon-implanted getter region in said silicon semiconductor substrate by implanting carbon ions into a surface of said silicon semiconductor substrate at an acceleration energy of about 800 keV and an implantation dosage of more than 5.times.10.sup.13 but less than 3.times.10.sup.15 ions/cm.sup.2 ; and
- forming an epitaxial layer on said surface of said semiconductor substrate.
- 2. A method as claimed in claim 1, wherein said forming a getter region further comprises forming a getter region having a peak carbon concentration of at least 1.times.10.sup.16 atoms/cm.sup.3.
- 3. A method as claimed in claim 1, further comprising forming a solid state imaging device on said semiconductor substrate.
- 4. A method as claimed in claim 3, wherein said solid state imaging device is a CCD imaging device.
- 5. A method as claimed in claim 1, further comprising increasing a gettering effect of said getter region by cooling said substrate after said of forming an epitaxial layer.
- 6. A method as claimed in claim 1, wherein said step of providing a semiconductor substrate further comprises providing a semiconductor substrate containing oxygen.
- 7. A method as claimed in claim 1, wherein said carbon is implanted at said surface of said substrate into said substrate at a dose of about 1.times.10.sup.14 ions/cm.sup.2.
- 8. A method as claimed in claim 1, wherein said step of providing a substrate includes providing a silicon substrate grown by a CZ method having a resistivity of about 1 to 10 ohms-cm, and an oxygen concentration of about 1.5.times.10.sup.18 atoms/cm.sup.3.
- 9. A method as claimed in claim 8, further including the steps of washing said CZ substrate with an aqueous NH.sub.4 OH/H.sub.2 O.sub.2 solution and then with an aqueous HCL/H.sub.2 O.sub.2 solution, dry-oxidizing said substrate at a temperature of about 1000.degree. C., and forming a SiO.sub.2 film having a thickness of about 20 nm on a mirror surface of said substrate.
- 10. A method as claimed in claim 9, wherein said step of implanting includes implanting said carbon ions through said film, and annealing said structure for a time and at a temperature in an atmosphere effective to anneal said structure to form said getter region having a peak concentration of implanted carbon of about 1.times.10.sup.16 atoms/cm.sup.3 at a position below the mirror surface of the CZ substrate.
- 11. A method as claimed in claim 1, further comprising the steps of:
- forming an SiO.sub.2 film on the semiconductor substrate before said step of forming the getter region, and
- removing said SiO.sub.2 film after said step of forming the getter region.
- 12. A method of manufacturing a semiconductor wafer comprising the steps of:
- providing a silicon semiconductor substrate;
- forming a carbon-implanted getter region having a peak carbon concentration of at least 1.times.10.sup.16 atoms/cm.sup.3 in said silicon semiconductor substrate by implanting carbon ions into a surface of said silicon semiconductor substrate at an acceleration energy of about 200 keV to about 800 keV; and
- forming an epitaxial layer on said surface of said semiconductor substrate.
- 13. A method as claimed in claim 12, further comprising forming a solid state imaging device on said semiconductor substrate.
- 14. A method as claimed in claim 13, wherein said step of forming a imaging device comprises forming a CCD imaging device.
- 15. A method as claimed in claim 12, wherein said carbon ions are implanted at a dose of 5.times.10.sup.13 to 5.times.10.sup.15 ions/cm.sup.2.
- 16. A method as claimed in claim 12, further comprising increasing a gettering effect of said getter region by cooling said substrate after growing said epitaxial layer.
- 17. A method as claimed in claim 12, wherein said carbon is implanted at said surface of said substrate into said substrate at an acceleration energy of about 800 keV and a dose of about 1.times.10.sup.14 ions/cm.sup.2.
- 18. A method as claimed in claim 12, further comprising the steps of:
- forming an SiO.sub.2 film on the silicon semiconductor substrate before said step of forming the getter region, and
- removing said SiO.sub.2 film after said step of forming the getter region.
- 19. A method of manufacturing a semiconductor wafer comprising forming a carbon-implanted getter region in a semiconductor substrate by implanting carbon ions into a surface of said substrate at an acceleration energy of about 800 keV and an implantation dosage of more than 5.times.10.sup.13 but less than 3.times.10.sup.15 ions/cm.sup.2.
- 20. A method as claimed in claim 19, wherein said forming a getter region further comprises forming a getter region having a peak carbon concentration of at least 1.times.10.sup.16 atoms/cm.sup.3.
- 21. A method as claimed in claim 19, further comprising forming a solid state imaging device on said semiconductor substrate.
- 22. A method as claimed in claim 19, further comprising increasing a gettering effect of said getter region by cooling said substrate after forming an epitaxial layer thereon.
- 23. A method as claimed in claim 19, wherein, prior to said step of forming said getter region, said method comprises providing a semiconductor substrate containing oxygen as said substrate.
- 24. A method as claimed in claim 19, wherein said carbon is implanted at said surface of said substrate into said substrate at a dose of about 1.times.10.sup.14 ions/cm.sup.2.
- 25. A method as claimed in claim 19, wherein, prior to said step of forming said getter region, said method comprises a step of providing, as said substrate, a silicon substrate grown by a CZ method having a resistivity of about 1 to 10 ohms-cm, and an oxygen concentration of about 1.5.times.10.sup.18 atoms/cm.sup.3.
- 26. A method as claimed in claim 25, further including the steps of washing said CZ substrate with an aqueous NH.sub.4 OH/H.sub.2 O.sub.2 solution and then with an aqueous HCL/H.sub.2 O.sub.2 solution, dry-oxidizing said substrate at a temperature of about 1000.degree. C., and forming a SiO.sub.2 film having a thickness of about 20 nm on a mirror surface of said substrate.
- 27. A method as claimed in claim 26, wherein said step of implanting includes implanting said carbon ions through said film, and annealing said structure for a time and at a temperature in an atmosphere effective to anneal said structure to form said getter region having a peak concentration of implanted carbon of about 1.times.10.sup.16 atoms/cm.sup.3 at a position below the mirror surface of the CZ substrate.
- 28. A method as claimed in claim 19, further comprising the steps of:
- forming an SiO.sub.2 film on the semiconductor substrate before said step of forming the getter region, and removing said SiO.sub.2 film after said step of forming the getter region.
Priority Claims (2)
Number |
Date |
Country |
Kind |
PO5-095388 |
Mar 1993 |
JPX |
|
PO6-023145 |
Jan 1994 |
JPX |
|
Parent Case Info
This application is a divisional of application Ser. No. 08/651,656 filed on May 21, 1996 U.S. Pat. No. 5,824,348 of Ritsuo TAKIZAWA, Takahisa KUSAKA, Takayoshi HIGUCHI, Hideo KANBE and Masanori OHASHI entitled SEMICONDUCTOR WAFER AND METHOD OF MANUFACTURING SAME, which is a continuation of Ser. No. 08/216,052 filed on Mar. 21, 1994 abandoned.
US Referenced Citations (11)
Foreign Referenced Citations (5)
Number |
Date |
Country |
59-54220 |
Mar 1984 |
JPX |
59-67629 |
Apr 1984 |
JPX |
87-314757 |
Apr 1986 |
JPX |
4-206932 |
Jul 1992 |
JPX |
5-152304 |
Jun 1993 |
JPX |
Divisions (1)
|
Number |
Date |
Country |
Parent |
651656 |
May 1996 |
|
Continuations (1)
|
Number |
Date |
Country |
Parent |
216052 |
Mar 1994 |
|