Patent Application
20160336188
1. Field of the Invention
The present invention relates to a semiconductor-wafer cleaning tank and a method of manufacturing a bonded wafer by an ion implantation delamination .method using the cleaning tank, and particularly to a method of manufacturing a silicon-on-insulator (SOI) wafer that is required to have an SOI layer 30 nm or less thick with a film-thickness uniformity of ±0.5 nm in the wafer plane, referred to as extremely thin SOI (ETSOI).
2. Description of the Related Art
A method of manufacturing an SOI wafer by delaminating an ion-implanted wafer after bonding, i.e., the ion implantation delamination method (a technique also referred to as the Smart Cut method (registered trademark)), has attracted attention as a method of manufacturing an SOI wafer, particularly a method of manufacturing an SOX wafer having a thin SOI layer that enables improvement in performance of advanced integrated circuits.
This ion implantation delamination method is a technique to form an SOI wafer (See Patent Literature 1) in the following manner: an oxide film is formed on at least one of two silicon wafers; gas ions such as hydrogen ions or rare gas ions are implanted from a front surface of one of the silicon wafers (a bond wafer) to form an ion implantation layer (also referred to as a micro bubble layer or an enclosed layer) in the interior of the wafer; the surface from which the ions are implanted is then brought into close contact with the other silicon wafer (a base wafer) through the oxide film; a heat treatment (a delamination heat treatment) is then performed to cleave one of the wafers (the bond wafer) along the micro bubble layer so that the bond wafer is separated into a thin film; and another heat, treatment (a bonding heat treatment) is then performed to strengthen a bond between the wafers. At this point, the cleavage plane (the delamination surface) is a surface of an SOI layer, and an SOI wafer having a thin SOI with high uniformity is relatively easily obtained.
The surface of the delaminated SOI wafer, however, contains a damaged layer due to ion implantation, and has surface roughness larger than a mirror surface of a usual silicon wafer. Accordingly, it is necessary to remove such damaged layer and surface roughness in the ion implantation delamination method. Conventionally, mirror polishing with extremely small polishing stock removal (a stock, removal of about 100 nm), referred to as touch polishing, has been performed in order to remove the damaged layer and the like in the final step after the bonding heat treatment. However, when polishing including a mechanical processing element is performed with respect to the SOI layer, since the stock removal of the polishing is not uniform, there occurs a problem of deteriorating film-thickness uniformity of the SOI layer achieved by implantation of hydrogen ions or the like and delamination.
For the purpose of solving such a problem a flattening process involving heat treatment, at a high temperature has been performed to improve the surface roughness instead of touch polishing (Patent Literature 2, 3, and 4). The flattening process allows the ion implantation delamination method to mass-produce SOI wafers each having a diameter of 300 nm and excellent film-thickness uniformity in which a film-thickness range (a value obtained by subtracting a minimum value from a maximum value in in-plane film-thickness) of each SOI layer is within 3 nm (i.e., ±1.5 nm in the wafer plane).
On the other hand, for a thickness-reduction processing after delamination in the ion implantation delamination method, there have been disclosed a method for reducing the film thickness uniformly in a plane by etching the SOI layer with a mixed aqueous solution containing ammonia water and hydrogen peroxide water (SC1) (Patent Literature 5) and a method for adjusting the film thickness of the SOI layer by etching with SCI (Patent Literature 6).
With the recent popularization of mobile terminals, lower power consumption, miniaturization, and higher performance have been required in semiconductor devices. As a potential candidate for 22-nm design rule or later generation, fully depleted devices using SOI wafers have been developed. In the fully depleted device, the SOI layer is extremely thinned to about 10 nm, and thickness distribution of the SOI layer affects threshold voltage of the device. Thus, the in-plane thickness distribution of the SOI layer is required to have a film-thickness uniformity in which the film-thickness range is 1 nm or less (i.e., ±0.5 nm in the wafer plane). However, this requirement is extremely difficult to be achieved in mass-production level.
The present invention was accomplished in view of the above-described problems. It is a purpose of the present invention to provide a method that can manufacture, in high yield, bonded wafers keeping film-thickness uniformity even after etching for adjusting the film thickness, and a cleaning solution tank for use in the etching.
To achieve this purpose, the present invention provides a semiconductor-wafer cleaning tank in which a semiconductor wafer is immersed in a cleaning solution and cleaned, comprising: a tank body, composed of quartz, for storing the cleaning solution to immerse a plurality of the semi conductor wafers in the cleaning solution; an overflow-receiving part, composed of quartz and provided around an opening of the tank body, for receiving the cleaning solution overflowing from an upper end of the opening of the tank, body; and a heat-insulating wall provided around, the tank body, wherein the heat-insulating wall forms an unbroken enclosure around the tank body with a hollow layer formed between the heat-insulating wall and a side wall of the tank body.
Such a semiconductor-wafer cleaning tank can reduce heat radiation from the wall of the tank body by the hollow layer formed between the heat-insulating wall and the side wall of the tank body, and can improve temperature uniformity in the wall of the tank body by air convection generated in the hollow layer. Thus, temperature uniformity of the cleaning solution in the tank body can be improved. When this tank is used for the etching step for adjusting the film thickness, bonded wafers keeping film-thickness uniformity even after etching for adjusting the film thickness can be manufactured in high yield.
The heat-insulating wall may extend from the over flow-receiving part downward.
Because the wall of the tank body easily radiates heat below the overflow-receiving part, the heat-insulating wall is preferably provided at this portion.
It is preferred that a bottom of the overflow-receiving part be located above an upper end of the immersed semiconductor wafer, and a lower end of the heat-insulating wall be located below a lower end of the immersed semiconductor wafer.
This configuration more greatly improves temperature uniformity of the cleaning solution around the entire immersed semiconductor wafers.
A lower portion of the heat-insulating wall may be open.
This configuration allows cold air accumulated in the bottom of the heat-insulating wall to be escaped.
A lower portion of the heat-insulating wall may be closed, and the heat-insulating wall may be provided with an air vent.
When the lower portion of the heat-insulating wall is closed, heat can be prevented from radiating from the lower portion of the heat-insulating wall. When the air vent is provided, the heat-insulating wall can be prevented from breaking due to air expansion.
A straightening plate may be provided at a lower portion of the heat-insulating wall.
The straightening plate, provided at the lower portion of the heat-insulating wall so as to form a flow channel, increases a surface area of the flow channel, and thus enhances heat insulating property.
The straightening plate is preferably provided below a lower end of the immersed semiconductor wafer.
This configuration more greatly improves temperature uniformity of the cleaning solution around the entire immersed semiconductor wafers.
Furthermore, the present invention provides a method of manufacturing a bonded wafer, comprising: implanting one or more gas ions selected from a hydrogen ion and a rare gas ion from a surface of a bond wafer to form an ion implantation layer in an interior of the bond wafer; bonding the surface from which the ion is implanted Into the bond wafer and a surface of a base wafer directly or through an insulator film; delaminating the bond wafer along the ion implantation layer to form a bonded wafer having a. thin film on the base wafer; and processing the thin film to reduce a thickness of the thin film, wherein the processing the thin film to reduce a thickness of the thin film includes an etching stage of etching the thin film by immersing the bonded wafer in a chemical solution tank filled with an etching solution, a temperature of which is controlled, to adjust the thickness of the thin film, and the etching stage includes etching the thin film by using the above semiconductor-wafer cleaning tank as the chemical solution tank.
When the above semiconductor-wafer cleaning tank is used as the chemical solution tank in the etching stage for adjusting the thickness of the thin film, temperature uniformity of the chemical solution in the chemical solution tank can be improved, and thus bonded wafers keeping film-thickness uniformity even after etching for adjusting the film thickness can be manufactured in high yield.
The bond wafer may be a silicon wafer, and the etching solution may be a mixed aqueous solution containing ammonia water and hydrogen peroxide water.
The silicon wafer can be suitably used the bond wafer.
The mixed aqueous solution containing ammonia water and hydrogen peroxide water, which has high performance of removing particles and organic impurities, can be suitably used as the etching solution.
The temperature of the etching solution is preferably controlled to 50° C or higher and 80° C. or lower,
When the temperature of the etching solution is 50° C. or higher, the etching rate is appropriate, and the film-thickness adjustment does not take a lot of time. When the temperature of the etching solution is 80° C or lower, the etching rate is not excessively high, and thus suitable for adjusting the film thickness.
As mentioned above, when the cleaning tank of the present invention is used for adjusting the thickness of the thin film (the SOI layer), the film thickness can be adjusted extremely uniformly, and thus bonded wafers required to have a film-thickness uniformity of the thin film of ±0.5 nm in the wafer plane can foe manufactured in high yield.
As mentioned above, the in-plane thickness distribution of the SOI layer is required to have a film-thickness uniformity in which the film-thickness range is 1 nm or less (i.e., ±0.5 nm in the wafer plane). However, when the thin film (the SOI layer) is formed by the ion implantation delamination method, the thin film right after delamination already has some film-thickness range (<1 nm) due to in-plane variation in the ion implantation depth. Thus, in order to obtain a final product including an SOI layer with a film-thickness uniformity of ±0.5 nm in the wafer planer it is important to prevent deterioration of the thickness-film range (or improve the thickness-film range) in the film-thickness adjustment (such as sacrificial oxidation treatment, flattening heat, treatment, and etching) after delamination. In regard to this, Japanese Unexamined Patent publication (Kokai) No. 2013-125909 discloses a manufacturing method in which an ion implantation condition and a sacrificial oxidation condition are modified to obtain the final product including the SOI layer with a film-thickness uniformity of ±0.5 nm in the wafer plane.
This manufacturing method can prevent deterioration of the thickness-film range (or improve the thickness-film range) after delamination by modifying the ion implantation condition and the sacrificial oxidation condition. On the other hand, when processes such as sacrificial oxidation treatment and flattening heat-treatment are performed, multiple cleaning steps (etching steps) with a chemical solution such as SC1 are performed before and after the processes. Thus, it is necessary to consider uniformity of stock removal of the SOI layer in a plane and among wafers in the cleaning steps.
The present inventors have diligently conducted studies and found the following. Although temperature of the chemical solution such as SC1 is generally adjusted with an accuracy ox ±1° C, in the chemical solution tank, temperature around the wall of the chemical solution tank is lower than the temperature of the chemical solution. Thus, heat Is taken away from, each plane of the wall of the chemical solution tank by heat exchange of the wall of the chemical solution tank, resulting in a decrease in temperature. Consequently, wafers placed within the chemical solution tank subtly vary in stock removal of the SOI layer, depending on the wafer plane or a slot position. This variation of stock removal is extremely small and thus hardly affects film-thickness uniformity after cleaning in the case of a relatively thick SOI layer (for example 100 nm or more). However this variation is considerable in the case of ET-SOI. The present invention was brought to completion from these findings.
Hereinafter, the present invention will be described in detail, but the present invention is not limited thereto.
Herein, an example in which the bonded wafer is an SOI wafer manufactured with silicon wafers is described, but the “bonded wafer” in the present invention is not limited to an SOI wafer or a silicon wafer.
In other words, the invention can be applied to any methods of manufacturing a bonded wafer by the ion implantation delamination method which includes thickness-reduction processing by etching.
For example, there may be mentioned a case in which a wafer such as a SiGe wafer or a compound semiconductor wafer is bonded to silicon, quartz, Al2O3 or the like. In this case, the bond wafer to be boned may include no insulator film. The etching solution may be any solution capable of etching the formed thin film, and is appropriately selected based on the bond wafer to be used.
The method of manufacturing a bonded wafer of the present invention begins with forming a bonded wafer having a thin film on a base wafer. The bonded wafer may fcs formed by a known method, the ion implantation delamination method (also referred to as the Smart Cut method (registered trademark)). Specifically, the bonded wafer having a thin film on a base wafer can be formed in the following manner: an ion implantation layer is formed in an interior of a bond wafer by implanting one or more gas ions selected from hydrogen ions and rare gas ions from the surface of the bond wafer; the surface from which the ion is implanted into the bond wafer and the surface of the base wafer are bonded directly or through ah insulator film; and the bond wafer is delaminated along the ion implantation layer.
The bond wafer is preferably, but not particularly limited to, a silicon wafer.
The bonded wafer used in the thickness-reduction processing (the etching step) is preferably a bonded wafer having a thin film (an SOI layer) with a film-thickness range within 3 nm (i.e., ±1.5 nm in the wafer plane), more preferably within 1 nm (i.e., ±0.5 nm in the wafer plane), manufactured by the ion implantation delamination method.
A sacrificial oxidation treatment and a flattening heat treatment may be performed after delamination. The sacrificial oxidation treatment and the flattening heat treatment can be performed according to known methods.
After forming the bonded wafer, the thin film is processed to reduce its thickness.
The thickness-reduction processing is performed by immersing the bonded wafer after delamination in the cleaning tank (a chemical solution tank) of the present invention filled with an etching solution temperature of which is controlled, and thereby etching the thin film. In the present invention, the etching is carried out under the condition where the chemical solution tank is surrounded by the heat-insulating wall with the hollow layer.
Hereinafter, the etching step (the cleaning step) in the method of manufacturing a bonded wafer of the present invention will be described in more detail with reference to drawings.
Bonded wafers 3 after delamination are placed within the chemical solution tank 1. An etching solution (a cleaning solution) 16 such as SC1 circulates, in a direction of the solid arrow a in
The temperature of the etching solution is controlled with a thermometer 6 placed in an overflow-receiving part 5 and a heater 7, based on proportional integral differential (PID) control, so as to have a desired temperature (for example, 70±1° C.). The etching solution returned to the pump 8 from the overflow-receiving part 5 passes through a filter 4, is controlled again with the heater 7 so as to have the desired temperature, and enters the chemical solution tank 1.
In addition, downflow of clean air, as shown by the hollow arrow b, is formed through an air filter 9 provided above the chemical solution tank 1. The clean air flows around the chemical solution tank 1, then passes through an exhaust duct 10 on the side wall and the bottom, and discharges through a main exhaust port.
In the conventional etching step, this clean air exchanges heat with the chemical solution tank 1 and a rinsing tank. Thus, slight temperature distribution occurs around the chemical solution tank 1 and in the chemical solution, which causes slight variation of stock removal in the for plane and among the wafers.
By contrast, in the present invention the heat-insulating wall 2 is provided around the tank body 15, and the hollow layer 13 is thereby formed between the heat-insulating wall 2 and the side wall of the tank body 15. This hollow layer 13 can reduce heat radiation from the side wall of the tank body 15, and can improve temperature uniformity in the side wall of the tank body 15 by air convection generated in the hollow layer.
Etching using such a chemical solution tank 1 can reduce the temperature variation of the etching solution 16 in the chemical solution tank 1. Thus, etching (cleaning) can be performed with extremely high stock-removal uniformity in the wafer plane and among the wafers. In other words, film-thickness uniformity can be kept even after etching.
Additionally, heat-insulating property of the hollow layer 13 can be inersa.sed by sandblasting the surface of the heat-insulating wall 2.
The heat-insulating wall 2 may extend from the overflow-receiving part 5 downward.
Because the wall of the tank body 15 easily radiates heat below the overflow-receiving part 5, the heat-insulating wall 2 is preferably provided at this portion.
It is preferred that the bottom of the overflow-receiving part 5 is located above the upper end of the immersed semiconductor wafers 3, and the lower end of the heat-insulating wall 2 is located below the lower end of the immersed semiconductor wafers 3.
This configuration more greatly improves temperature uniformity of the etching solution (the cleaning solution) 16 around the entire immersed semiconductor wafers 3.
In the first embodiment, the lower portion of the heat-insulating wall 2 is open.
This configuration allows cold air accumulated in the bottom of the heat-insulating wall 2 to be escaped.
The heat-insulating wall 2 is, as shown in
The chemical solution tank (the cleaning tank) 21 of the second embodiment is different from the chemical solution tank (the cleaning tank) 1 of the first embodiment in that a straightening plate 14 for forming a flow channel is provided at the lower portion of the heat-insulating wall 2.
The straightening plate 14, provided at the lower portion of the heat-insulating wall 2 to form a flow channel, increases a surface area of the flow channel, and thus enhances heat insulating property, as well as allowing cold air accumulated in the bottom of the heat-insulating wall 2 to he escaped.
The straightening plate 14 is preferably provided below the lower end of the immersed semiconductor wafers 3.
This configuration more greatly improves temperature uniformity of the etching solution (the cleaning solution) 16 around the entire immersed semiconductor wafers 3.
The heat-insulating wall 2 and the straightening plate 14 are, as shown in
Alternatively, the lower portion of the heat-insulating wall 2 may be closed, and the heat-insulating wall 2 may be provided with an air vent.
When the lower portion of the heat-insulating wall is closed, heat can be prevented from radiating from the lower portion of the heat-insulating wall. When the air vent is provided, the heat-insulating wall can be prevented from breaking due to air expansion.
In the case that a silicon wafer is used as the bond wafer, the etching solution is preferably a mixed aqueous solution containing ammonia water and hydrogen peroxide water, SC1, which has a function of etching silicon.
SC1 which can remove particles and organic impurities is effective and frequently used in a process for manufacturing an SOI wafer by the ion implantation delamination method.
The temperature of the etching solution is preferably controlled to a prescribed temperature ranging from 50° C. to 80° C. (for example, 70° C.).
When The temperature of the etching solution is 50° C. or higher, the etching rate is appropriate, and the film-thickness adjustment does not take a lot of time. When the temperature of the etching solution is 80° C or lower, the etching rate is not excessively high, and thus suitable for adjusting the film thickness.
The entire etching step (the cleaning step) in the method of manufacturing a bonded wafer of the present invention is performed in a cleaning line as shown in
In
Incidentally,
Of course, the etching step in the method of manufacturing a bonded wafer of the present invention can be applied to an etching step (a cleaning step) of a usual mirror-polished wafer (a PW wafer). However, since the thickness of the PW wafer is controlled in the order of μm, the etching step in the method of manufacturing a bonded wafer of the present, invention, which aims to strictly adjust stock removal less than nm, cannot, fully exhibit the effect in the application to the PW wafer.
As described above, when the cleaning tank of the present invention is used for adjusting the thickness of the thin film (the SOI layer), the thickness can be adjusted extremely uniformly, and thus bonded wafers required to have a film-thickness uniformity of the thin film of ±0.5 nm in the wafer plane can be manufactured in high yield.
Hereinafter, the present invention will be specifically described with reference to experimental example, example, and comparative example, but the present invention is not limited thereto.
As described above, it is supposed that the clean air in
Because it is difficult to measure slight temperature deference (among the wafers and in the wafer plane) in the cleaning solution during cleaning (etching), SOI wafers in one batch (25 SOI wafers, each includes a base wafer of a 300-nm diameter silicon single crystal wafer, a buried oxide film layer composed of SiO2, and an SOI layer composed of a silicon single crystal layer being stacked in this order) were cleaned repeatedly in the first cleaning area shown by B of
The graph of
Subsequently, stock removal was compared in the wafer plane in the following manner; an SOI wafer was placed in the wafer carrier with a notch located at the top of the wafer surface, and cleaned repeatedly; the film thickness of the wafer before and after cleaning was measured at positions R/2 (R denotes radius) left and right from the center line of the wafer (see
The graph of
In the first cleaning area B in the cleaning line of
[Cleaning Condition]
(Cleaning Flow)
SC1 (75±1° C.)→Rinse(25° C.)→Rinse(25° C.) was repeated 6 times.
(Cleaning Tank)
Material: transparent quarts, 3 mm thick (common to the tank body, the overflow-receiving part, and the heat-insulating wall)
(Overflow-Receiving Part)
The bottom of the overflow-receiving part was located 30 mm above the upper end of the wafers to be cleaned.
(Heat-Insulating Wall)
The heat-insulating wall was provided 30 mm below the lower end of the wafers to he cleaned.
[Wafer to be Used]
the wafer used were 25 SOI wafers (having a diameter of 300 mm, with crystal orientation of <100>) each manufactured by the ion implantation delamination method (using silicon single crystal wafers as the bond wafer and the base wafer), subjected to a sacrificial oxidation treatment and a flattening heat treatment after delamination, and controlled to have an SOI layer with an average thickness of 90 nm and a film-thickness range (in the wafer plane) of 1.0 nm (±0.5 nm). The 25 SOI wafers were also controlled to have a film-thickness range (maximum-minimum) among the wafers in a batch of 1.0 nm.
[SOI Film Thickness Measurement]
The entire surface (4237 points) except for a peripheral portion within 3 mm from the edge was measured with Acumap made by ADE Corp.
As shown in Table 1, the 25 wafers in Example, after cleaning with SC1 6 times, exhibited a small stock removal tolerance in a batch of 0.06 nm and a small, average stock removal range of 0.03 nm, and thus substantially kept a film-thickness uniformity in which the film-thickness range was within 1.0 nm (±0.5 nm) among the wafers and in the wafer plane. By contrast, the 25 wafers in Comparative Example exhibited a large stock removal tolerance in a batch of 0.39 nm and a large average stock removal range of 0.40 nm, and thus deteriorated the film-thickness range to about 1.4 nm among the wafers and in the wafer plane.
As described above, it was revealed that when the cleaning tank of the present invention is used for adjusting the thickness of the thin film (the SOI layer), the thickness can be adjusted extremely uniformly, and thus bonded wafers keeping film-thickness uniformity even after etching for adjusting the film thickness can be manufactured in high yield.
It is to be noted that the present invention is not limited to the foregoing embodiment. The embodiment is just an exemplification, and any examples that have substantially the same feature and demonstrate the same functions and effects as those in the technical concept described in claims of the present invention are included in the technical scope of the present invention.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2014-012267 | Jan 2014 | JP | national |
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/JP2015/000102 | 1/13/2015 | WO | 00 |
