This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2020-184891, filed on Nov. 5, 2020; the entire contents of which are incorporated herein by reference.
Embodiments described herein relate generally to a sensor and an electronic device.
For example, there is a sensor that utilizes a MEMS structure. It is desirable to increase the detection accuracy of the sensor.
According to one embodiment, a sensor includes a first detection element, and a processing part. The first detection element includes a base body, a first supporter fixed to the base body, a first movable part, a first counter conductive part, and a second counter conductive part. The first movable part is supported by the first supporter and separated from the base body. The first movable part includes a first movable base part supported by the first supporter, a second movable base part connected with the first movable base part, a first movable beam including a first beam, and a second movable beam including a second beam. The first beam includes a first end portion and a first other end portion. The first end portion is connected with the first movable base part. The first other end portion is connected with the second movable base part. The second beam includes a second end portion and a second other end portion. The second end portion is connected with the first movable base part. The second other end portion is connected with the second movable base part. The first counter conductive part faces the first movable beam. The second counter conductive part faces the second movable beam. The processing part is configured to perform a first operation. The first operation outputs information regarding an acceleration applied to the first detection element and a temperature of the first detection element based on a first signal obtained from the first counter conductive part and a second signal obtained from the second counter conductive part.
According to one embodiment, an electronic device includes the sensor described above, and a circuit processing part configured to control a circuit based on a signal obtained from the sensor.
Various embodiments are described below with reference to the accompanying drawings.
The drawings are schematic and conceptual; and the relationships between the thickness and width of portions, the proportions of sizes among portions, etc., are not necessarily the same as the actual values. The dimensions and proportions may be illustrated differently among drawings, even for identical portions.
In the specification and drawings, components similar to those described previously or illustrated in an antecedent drawing are marked with like reference numerals, and a detailed description is omitted as appropriate.
As shown in
As shown in
As shown in
A first direction from the substrate 50S toward the first movable part 10 is taken as a Z-axis direction. The Z-axis direction is substantially perpendicular to the first surface 50Sf. One direction perpendicular to the Z-axis direction is taken as an X-axis direction. A direction perpendicular to the Z-axis direction and the X-axis direction is taken as a Y-axis direction.
The first movable part 10 includes a first movable base part 10A, a second movable base part 10B, a first movable beam 11M, and a second movable beam 12M. The first movable base part 10A is supported by the first supporter 50A. The second movable base part 10B is connected with the first movable base part 10A. As described later, in the example, the second movable base part 10B is connected with the first movable base part 10A by a connection base part 10P.
As shown in
The first counter conductive part 51 faces the first movable beam 11M. The second counter conductive part 52 faces the second movable beam 12M.
As shown in
The first movable part 10 is conductive. The base body 50S includes, for example, silicon or the like. The base body 50S may be insulating. For example, the first supporter 50A may include an insulating member.
As shown in
The processing part 70 (see
As shown in
The first signal sig1 corresponds to a first electrical signal generated between the first movable part 10 and the first counter conductive part 51. The second signal sig2 corresponds to a second electrical signal generated between the first movable part 10 and the second counter conductive part 52.
The first direction (Z-axis direction, see
As shown in
As shown in
By providing the connection base part 10P, the second movable base part 10B becomes easy to move. For example, the second movable base part 10B is likely to be displaced in a direction including the Y-axis direction according to the acceleration. As a result, stress is likely to be applied to the first beam 11 and the second beam 12. For example, one of compressive stress and tensile stress is applied to the first beam 11. For example, the other of compressive stress and tensile stress is applied to the second beam 12.
For example, a resonance frequency of the beam changes according to the stress. The direction of increase or decrease of the resonance frequency of the beam changes according to the polarity of the stress. By providing the connection base part 10P, the change in the resonance frequency of the two beams can be increased. More accurate detection becomes possible.
As shown in
As shown in
As shown in
By providing the first movable conductive part 21, an area where the first movable beam 11M and the first counter conductive part 51 face each other can be increased. For example, even when the first beam 11 vibrates and the first beam 11 bends in the Y-axis direction, the first movable conductive part 21 can be displaced along the Y-axis direction while maintaining a parallel state to the first counter conductive part 51. For example, it is easy to obtain high capacitance sensitivity.
By providing the second movable conductive part 22, an area where the second movable beam 12M and the second counter conductive part 52 face each other can be increased. For example, even when the second beam 12 vibrates and the second beam 12 bends in the Y-axis direction, the second movable conductive part 22 can be displaced along the Y-axis direction while maintaining a parallel state to the second counter conductive part 52. For example, it is easy to obtain high capacitance sensitivity.
As shown in
In the example shown in
As shown in
In the following, an example of operation in the sensor 110 according to the embodiment will be described. As described above, the processing part 70 can perform the first operation. The first operation includes deriving information on acceleration and temperature based on a difference and a sum of a first resonance frequency of the first movable beam 11M and a second resonance frequency of the second movable beam 12M. The first resonance frequency is obtained from the first signal sig1 (see
For example, the resonance frequency can be obtained by processing a signal with a PLL (phase locked loop) circuit. For example, the PLL circuit may be included in the processing part 70. The PLL circuit may be provided separately from the processing part 70.
For example, the first operation may include deriving information about acceleration and temperature based on data about the relationship between the first resonance frequency and the second resonance frequency and the multiple accelerations and the multiple temperatures. This data is stored in, for example, a storage part 70M (see
For example, the acceleration applied to the first detection element 10U and the temperature of the first detection element 10U are functions of the first resonance frequency and the second resonance frequency.
In one example, the acceleration G (f1, f2) and the temperature T (f1, f2) are represented by the following first and second equations.
G(f1,f2)=a1f1+b1f2+c1 (1)
T(f1,f2)=a2f1+b2f2+c2 (2)
“G” is the acceleration. “T” is the temperature. “f1” is the first resonance frequency, “f2” is the second resonance frequency. “a1”, “b1”, “c1”, “a2”, “b2”, and “c2” are coefficients. The data stored in the storage part 70M includes at least one of values of “a1”, “b1”, “c1”, “a2”, “b2”, or “c2”. The data stored in the storage part 70M includes the information (for example, a function) of the above equation. These data are obtained, for example, by measurements made in advance. The acceleration G and the temperature T are controlled in the measurement performed in advance.
The acceleration G (f1, f2) and the temperature T (f1, f2) may be expressed by the following third and fourth equations.
G(f1,f2)=a11f1+a12f12+b11f2+b12f22+c11 (3)
T(f1,f2)=a21f1+a22f12+b21f2+b22f22+c21 (4)
In the third and fourth equations, “a11”, “a12”, “b11”, “b12”, “c11”, “a21”, “a22”, “b21”, “b22”, and “c21” are coefficients.
The function of the first resonance frequency f1 and the second resonance frequency f2 may include a function of the third order or higher of the first resonance frequency f1 and the second resonance frequency f2. The function of the first resonance frequency f1 and the second resonance frequency f2 may include the interaction term of the first resonance frequency f1 and the second resonance frequency f2.
The acceleration “G” and the temperature “T” can be calculated (for example, estimated) from the first resonance frequency f1 and the second resonance frequency f2. The calculation of the coefficients may be performed by, for example, the least squares method. For example, based on the above equations or the like, the information on the acceleration and the temperature can be derived based on the difference and sum of the first resonance frequency f1 and the second resonance frequency f2. For example, with respect to the acceleration “G”, the first resonance frequency f1 and the second resonance frequency f2 change in opposite directions (opposite polarities). For example, with respect to the temperature “T”, the first resonance frequency f1 and the second resonance frequency f2 change in the same direction (same polarity) as each other.
As shown in
As shown in
The processing part 70 derives the first resonance frequency f1 of the first movable beam 11M based on the first signal sig1, and calculates the second resonance frequency f2 of the second movable beam 12M based on the second signal sig2. (Step S120). As described above, the processing is performed by the PLL circuit or the like.
The processing part 70 estimates the acceleration G and the temperature T based on the first resonance frequency f1 and the second resonance frequency f2 (step S130). For example, the above equations 1 and 2 are used. For example, the above-mentioned third and fourth equations may be used.
The processing part 70 outputs the information regarding the estimated acceleration G and temperature T (step S150).
In this way, in the embodiment, the acceleration G and the temperature T can be output. In the embodiment, the first beam 11 and the second beam 12 are provided. In these beams, the resonance frequency changes according to the acceleration G and the temperature T. Highly accurate detection is possible by using the relational expressions of the above-mentioned first and second resonance frequencies and the acceleration and the temperature.
As shown in
The temperature T is set (step S206). For example, the temperature of the first detection element 10U is set to one of several temperatures within the target temperature range. The target temperature range is, for example, the operating temperature range of the sensor. The target temperature range is, for example, not lower than −20° C. and not lower than 80° C.
The first signal sig1 obtained from the first counter conductive part 51 and the second signal sig2 obtained from the second counter conductive part 52 are acquired (step S210).
The first resonance frequency f1 of the first movable beam 11M is calculated based on the first signal sig1, and the second resonance frequency f2 of the second movable beam 12M is calculated based on the second signal sig2 (step S220). As described above, the processing is performed by the PLL circuit or the like.
It is determined whether or not the measurement within the target temperature range is completed (step S240). When the measurement within the target temperature range is not completed, the process proceeds to step S245. In step S245, the temperature of the first detection element 10U is changed, and the process returns to step S210.
When the measurement within the target temperature range is completed, the process proceeds to step S250. In step S250, it is determined whether or not the measurement within the target acceleration range is completed. When the measurement within the target acceleration range is not completed, the process proceeds to step S255. The acceleration is changed in step S255. Then, the process returns to step S205.
When the measurement within the target acceleration range is completed, the measurement result is stored (step S260).
For example, the operation of
By such an operation, for example, data regarding the relationship of the first resonance frequency f1, the second resonance frequency f2, the acceleration G, and the temperature T is acquired and stored. Using the acquired and stored data, the operation described with respect to
As already described with respect to
The first resonance frequency f1 of the first movable beam 11M changes depending on the first voltage V1 applied to the first drive conductive part 61. The change in the first resonance frequency f1 is based on, for example, the soft spring effect due to the electrostatic spring and the hard spring effect due to the geometric non-linearity in the large deformation. The second resonance frequency f2 of the second movable beam 12M changes depending on the second voltage V2 applied to the second drive conductive part 62. The change in the second resonance frequency f2 is based on, for example, the soft spring effect due to the electrostatic spring and the hard spring effect due to the geometric non-linearity in the large deformation. In the embodiment, the acceleration and the temperature may be detected by controlling the difference between the first resonance frequency f1 and the second resonance frequency f2 when these voltages are applied.
In the example shown in
As shown in
As shown in
The processing part 70 derives the first resonance frequency f1 of the first movable beam 11M based on the first signal sig1, and calculates the second resonance frequency f2 of the second movable beam 12M based on the second signal sig2. (Step S120). As described above, the processing is performed by the PLL circuit or the like.
The processing part 70 estimates the acceleration G and the temperature T based on the first resonance frequency f1 and the second resonance frequency f2 (step S130). For example, the above equations 1 and 2 are used. The above-mentioned third and fourth equations may be used.
In a case where the difference between the estimated temperature estimated in the latest step S130 and the estimated temperature estimated in the previous step S130 is more than the reference value, the processing part 70 performs the processing of step S145.
In step S145, the processing part 70 changes to the drive/adjustment voltage (first voltage V1 and second voltage V2 described above) according to the latest estimated value of the temperature. After that, the process returns to step S110. Steps S110 to S145 are repeated until the difference between the latest estimated value of the temperature and the previous estimated value of the temperature is equal to or less than the reference value.
In step S140, in a case where the difference between the latest estimated value of the temperature and the previous estimated value of the temperature is not more than the reference value, the processing part 70 outputs information regarding the acceleration G and the temperature T (step S150).
In this way, in the embodiment, the acceleration G and the temperature T can be output. In the embodiment, the first beam 11 and the second beam 12 are provided. In these beams, the resonance frequency changes according to the acceleration G and the temperature T. Highly accurate detection is possible by using the relational expressions of the above-mentioned first and second resonance frequencies, the acceleration and the temperature. Further, by applying the drive/adjustment voltage corresponding to the temperature T, for example, it is possible to output an acceleration G in which the dependence of the temperature T is corrected.
As described above, the first operation may include that at least one of the first voltage V1 or the second voltage V2 (that is, the drive/adjustment voltage) is changed, and the temperature dependence of the difference between the first resonance frequency f1 and the second resonance frequency f2 is reduced. For example, the drive/adjustment voltage such that the temperature dependence of the difference between the first resonance frequency f1 and the second resonance frequency f2 becomes substantially 0 may be applied to the first drive conductive part 61 (and the other first drive conductive part 61A and the second drive conductive part 62 (and the other second drive conductive part 62A). Data regarding the relationship between the drive/adjustment voltage and the temperature T in this state may be acquired in advance. The data acquired in advance is stored in, for example, the storage part 70M.
As described above, in the first operation, the processing part 70 is possible to output the acceleration G and the temperature T when the difference between the latest estimated value of the temperature and the previous estimated value of the temperature becomes smaller than the reference value as the acceleration G applied to the first detection element 10U and the temperature T of the first detection element 10U.
The drive/adjustment voltage (first voltage V1 and second voltage V2) may include an AC component and a DC component. The first movable beam 11M and the second movable beam 12M vibrate based on the AC component. The vibration is adjusted based on the AC component and the DC component. The adjustment of vibration is based on, for example, the soft spring effect due to the electrostatic spring and the hard spring effect due to the geometric non-linearity in large deformation.
For example, in a case where the first detection element 10U includes the first drive conductive part 61 and the first drive conductive part 62, the first operation includes applying the first voltage V1 including the AC component to the first drive conductive part 61 to vibrate the first movable beam 11M, and applying the second voltage V2 including the AC component to the second drive conductive part 62 to vibrate the second movable beam 12M. As described above, the first drive conductive part 61 faces the first movable beam 11M. The second drive conductive part 62 faces the second movable beam 12M. The DC component of the first voltage V1 may be different from the DC component of the second voltage V2. For example, the voltage may be adjusted so that the temperature dependence of the difference between the first resonance frequency f1 and the second resonance frequency f2 becomes substantially zero.
As will be described later, the conductive part to which the driving voltage is applied and the conductive part to which the adjusting voltage is applied may be provided separately.
In the following, an example of acquiring data regarding the relationship of the first resonance frequency f1, the second resonance frequency f2, the acceleration G, and the temperature T will be described.
As shown in
The temperature T is set (step S206). For example, the temperature of the first detection element 10U is set to one of several temperatures within the target temperature range. The target temperature range is, for example, the operating temperature range of the sensor. The target temperature range is, for example, not lower than ˜20° C. and not higher than 80° C.
The first signal sig1 obtained from the first counter conductive part 51 and the second signal sig2 obtained from the second counter conductive part 52 are acquired (step S210).
The first resonance frequency f1 of the first movable beam 11M is calculated based on the first signal sig1, and the second resonance frequency f2 of the second movable beam 12M is calculated based on the second signal sig2 (step S220). As described above, the processing is performed by the PLL circuit or the like.
The relationship of the drive/adjustment voltage at which the temperature dependence of the difference between the first resonance frequency f1 and the second resonance frequency f2 is not more than the reference value, and the acceleration and the temperature is measured (step S230).
It is determined whether or not the measurement within the target temperature range is completed (step S240). When the measurement within the target temperature range is not completed, the process proceeds to step S245. In step S245, the temperature of the first detection element 10U is changed, and the process returns to step S210.
When the measurement within the target temperature range is completed, the process proceeds to step S250. In step S250, it is determined whether or not the measurement within the target acceleration range is completed. When the measurement within the target acceleration range is not completed, the process proceeds to step S255. The acceleration is changed in step S255. Then, the process returns to step S205.
When the measurement within the target acceleration range is completed, the measurement result is stored (step S260).
For example, the operation shown in
By such an operation, for example, data regarding the relationship of the first resonance frequency f1, the second resonance frequency f2, the acceleration G, the temperature T, and the drive/adjustment voltage is acquired and stored. Using the acquired and stored data, the operation described with respect to
As shown in
The first drive conductive part 61 (and the other first drive conductive part 61A) faces the first movable beam 11M. The second drive conductive part 62 (and the other second drive conductive part 62A) faces the second movable beam 12M. The third drive conductive part 63 (and the other third drive conductive part 63A) faces the first movable beam 11M. The fourth drive conductive part 64 (and the other fourth drive conductive part 64A) faces the second movable beam 12M. In this example, there is a portion of the first movable beam 11M (first movable conductive part 21) between the first drive conductive part 61 and the third drive conductive part 63. In this example, there is a portion of the second movable beam 12M (second movable conductive part 22) between the second drive conductive part 62 and the fourth driven conductive part 64. In the sensor 111, the first drive conductive part 61 is between the first beam 11 and the first movable conductive part 21. The second drive conductive part 62 is between the second beam 12 and the second movable conductive part 22.
For example, the first operation includes applying the first voltage V1 including the AC component to the first drive conductive part 61 to vibrate the first movable beam 11M, applying the second voltage V2 including the AC component to the second derive conductive part 62 to vibrate the second movable beam 12M, and applying a voltage (a DC voltage, for example) to at least one of the third drive conductive part 63 or the fourth derive conductive part 64. For example, the movable beam vibrates due to the voltage applied to the first drive conductive part 61 and the second drive conductive part 62. The adjustment is performed by the voltage applied to the third drive conductive part 63 and the fourth drive conductive part 64. The first operation may include changing these voltages. The applied voltage may include at least one of the DC component or the AC component.
As shown in
As shown in
As shown in
In the embodiment, the calculated (estimated) temperature T (temperature T included in the output information) corresponds to the temperatures of the first movable beam 11M and the second movable beam 12M.
In the embodiment, the temperature T is accurately detected. The acceleration G corrected for the temperature T may be output. For example, the processing part 70 performs the following first operation. The first operation includes outputting the information regarding the acceleration G corrected for the temperature T based on the data regarding the relationship between the first resonance frequency f1 of the first movable beam 11M based on the first signal sig1 obtained from the first counter conductive part 51, the second resonance frequency f2 of the movable beam 12M based on the second signal sig2 obtained from the second counter conductive part 52, the first resonance frequencies f1 and the second resonance frequency f2, the multiple accelerations G, and the multiple temperatures T.
As shown in
The configuration described in reference to the first embodiment is applicable to the configuration of the base body 50S, the first supporter 50A, the first movable part 10, etc., of the sensor 120.
As shown in
As shown in
The third embodiment relates to an electronic device.
As shown in
As shown in
Embodiments include the following configurations (e.g., technological proposals).
Configuration 1
A sensor, comprising:
a first detection element; and
a processing part,
the first detection element including
the processing part being configured to perform a first operation, the first operation outputting information regarding an acceleration applied to the first detection element and a temperature of the first detection element based on a first signal obtained from the first counter conductive part and a second signal obtained from the second counter conductive part.
Configuration 2
The sensor according to Configuration 1, wherein
the first operation includes deriving the information based on a difference and a sum of a first resonance frequency of the first movable beam and a second resonance frequency of the second movable beam, the first resonance frequency being obtained from the first signal, the second resonance frequency being obtained from the second signal.
Configuration 3
The sensor according to Configuration 2, wherein
the first operation includes acquiring data from a storage part storing the data regarding a relationship between the acceleration and the temperature, and the first resonance frequency and the second resonance frequency, and includes deriving the information based on the data.
Configuration 4
The sensor according to Configuration 3, further comprising: the storage part.
Configuration 5
The sensor according to Configuration 3 or 4, wherein
the acceleration is a first function of the first resonance frequency and the second resonance frequency,
the temperature is a second function of the first resonance frequency and the second resonance frequency, and
the data includes at least one of values of a coefficient included in the first function and a coefficient included in the second function.
Configuration 6
The sensor according to Configuration 3 or 4, wherein
the acceleration and the temperature are represented by following a first equation and a second equation,
G(f1,f2)=a1f1+b1f2+c1 (1)
T(f1,f2)=a2f1+b2f2+c2 (2)
the G (f1, f2) is the acceleration, the T (f1, f2) is the temperature, the f1 is the first resonance frequency, the f2 is the second resonance frequency, the a1, the b1, the c1, the a2, the b2, and the c2 are coefficients,
the data includes at least one of values of the a1, the b1, the c1, the a2, the b2, and the c2.
Configuration 7
A sensor, comprising:
a first detection element; and
a processing part,
the first detection element including
the processing part being configured to perform a first operation, the first operation outputting information regarding an acceleration corrected for a temperature based on data regarding relationship between a first resonance frequency of the first movable beam based on a first signal obtained from the first counter conductive part, a second resonance frequency of the second movable beam based on a second signal obtained from the second counter conductive part, the first resonance frequency and the second resonance frequency, and a plurality of accelerations and a plurality of temperatures.
Configuration 8
The sensor according to any one of configurations 1 to 7, wherein
the first movable part is conductive,
the first signal corresponds to a first electrical signal generated between the first movable part and the first counter conductive part, and
the second signal corresponds to a second electrical signal generated between the first movable part and the second counter conductive part.
Configuration 9
The sensor according to any one of Configurations 1 to 8, wherein
a first direction from the base body toward the first movable part crosses a second direction from the first end portion toward the first other end portion, and
a direction from the second end portion toward the second other end portion is along the second direction.
Configuration 10
The sensor according to configuration 9, wherein the first movable part further includes a connection base part,
the connection base part is provided between the first movable base part and the second movable base part, and connects the first movable base part and the second movable base part each other,
a third length along the third direction of the connection base part is shorter than a first length along the third direction of the first movable base part, shorter than a second length along the third direction of the second movable base part, and the third direction crosses a plane including the first direction and the second direction, and
the connection base part is between the first beam and the second beam in the third direction.
Configuration 11
The sensor according to Configuration 10, wherein
the first movable part further includes a movable member,
the second movable base part is between the connection base part and the movable member in the second direction,
the movable member is connected with the second movable base part, and
a length along the third direction of the movable member is longer than the second length.
Configuration 12
The sensor according to any one of Configurations 9 to 11, wherein
the first movable beam further includes
the first beam includes a first intermediate region between the first end portion and the first other end portion,
the first connection region connects the first intermediate region and the first movable conductive part, and
a length along the second direction of the first movable conductive part is longer than a length along the second direction of the first connection region.
Configuration 13
The sensor according to Configuration 12, wherein
the second movable beam further includes
the second beam includes a second intermediate region between the second end portion and the second other end portion,
the second connection region connects the second intermediate region and the second movable conductive part, and
a length along the second direction of the second movable conductive part is longer than a length along the second direction of the second connection region,
Configuration 14
The sensor according to any one of Configurations 2 to 7, wherein
the first detection element includes a first drive conductive part and a second drive conductive part,
the first drive conductive part faces the first movable beam,
the second drive conductive part faces the second movable beam,
the first resonance frequency changes by a first voltage of the first drive conductive part,
the second resonance frequency changes by a second voltage of the second drive conductive part, and
the first operation includes changing at least one of the first voltage or the second voltage and reducing temperature dependence of the difference between the first resonance frequency and the second resonance frequency.
Configuration 15
The sensor according to any one of Configurations 2 to 7, wherein
the first detection element includes a first drive conductive part and a second drive conductive part,
the first drive conductive part faces the first movable beam,
the second drive conductive part faces the second movable beam,
the first operation includes applying a first voltage including an AC component to the first drive conductive part to vibrate the first movable beam, and applying a second voltage including an AC component to the second drive conductive part to vibrate the second movable beam.
Configuration 16
The sensor according to Configuration 15, wherein
a DC component of the first voltage is different from a DC component of the second voltage.
Configuration 17
The sensor according to any one of Configurations 1 to 16, wherein
the first detection element includes first to fourth drive conductive parts,
the first drive conductive part faces the first movable beam,
the second drive conductive part faces the second movable beam,
the third drive conductive part faces the first movable beam,
the fourth drive conductive part faces the second movable beam,
the first operation includes applying a first voltage including an AC component to the first drive conductive part to vibrate the first movable beam, applying a second voltage including an AC component to the second drive conductive part to vibrate the second movable beam, and applying a DC voltage to at least one of the third drive conductive part or the fourth drive conductive part.
Configuration 18
The sensor according to Configuration 13, wherein
the first operation includes changing the DC voltage.
Configuration 19
The sensor according to any one of Configurations 1 to 18, further comprising:
a second detection element including
an angle being configured to be detected by a signal corresponding to movement of the second movable part,
Configuration 20
An electronic device, comprising:
the sensor according to any one of Configurations 1 to 19; and
a circuit processing part configured to control a circuit based on a signal obtained from the sensor.
According to embodiments, a sensor and an electronic device can be provided in which the detection accuracy can be increased.
Hereinabove, exemplary embodiments of the invention are described with reference to specific examples. However, the embodiments of the invention are not limited to these specific examples. For example, one skilled in the art may similarly practice the invention by appropriately selecting specific configurations of components included in sensors such as base bodies, supporters, movable parts, controllers, etc., from known art. Such practice is included in the scope of the invention to the extent that similar effects thereto are obtained.
Further, any two or more components of the specific examples may be combined within the extent of technical feasibility and are included in the scope of the invention to the extent that the purport of the invention is included.
Moreover, all sensors, and electronic devices practicable by an appropriate design modification by one skilled in the art based on the sensors, and the electronic devices described above as embodiments of the invention also are within the scope of the invention to the extent that the purport of the invention is included.
Various other variations and modifications can be conceived by those skilled in the art within the spirit of the invention, and it is understood that such variations and modifications are also encompassed within the scope of the invention.
While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the inventions. Indeed, the novel embodiments described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the inventions. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the invention.
Number | Date | Country | Kind |
---|---|---|---|
JP2020-184891 | Nov 2020 | JP | national |
Number | Name | Date | Kind |
---|---|---|---|
20090255339 | McNeil | Oct 2009 | A1 |
20140208823 | Trusov | Jul 2014 | A1 |
20150226762 | Seshia | Aug 2015 | A1 |
20210140992 | Reinke | May 2021 | A1 |
Number | Date | Country |
---|---|---|
H4-115165 | Apr 1992 | JP |
Entry |
---|
Dongsuk D. Shin et al., “Environmentally Robust Differential Resonant Accelerometer in a Wafer-Scale Encapsulation Process,” IEEE MEMS 2017, pp. 17-20 (2017). |
Number | Date | Country | |
---|---|---|---|
20220137085 A1 | May 2022 | US |