The present invention relates to a sensor circuit provided with an optical sensor having a photodetecting element and a touch sensor, and relates particularly to a sensor circuit and a display apparatus provided with an optical sensor and a touch sensor in a pixel region.
Conventionally, an optical-sensor-equipped display apparatus has been proposed that is provided with photodetecting elements such as photodiodes in its pixels and thereby is capable of detecting a brightness of external light and capturing an image of an object approaching its display panel. Such an optical-sensor-equipped display apparatus is supposed to be used as a display apparatus for two-way communication, or a display apparatus having a touch panel function.
In the case of a conventional optical-sensor-equipped display apparatus, when known composing elements such as signal lines, scanning lines, TFTs (thin film transistors), and pixel electrodes are formed on a base substrate of an active matrix substrate through semiconductor processing, photodiodes and the like are formed thereon through the same processing (see, for example, JP 2006-3857 A, and “A Touch Panel Function Integrated LCD Including LTPS A/D Converter”, T. Nakamura et al., SID 05 DIGEST, pp. 1054-1055, 2005).
Further, a display apparatus obtained by modifying the above-described optical-sensor-equipped display apparatus by adding a touch sensor so as to obtain outputs of two sensor systems has been known (see, for example, JP 2006-133788 A, and “FDP International 2008 Forum A-32”, Latest Trends of Touch Panel Development, Korea, Samsung Electronics Co., Ltd., Nam Deog Kim et al., 2008). In use of such a display apparatus in which sensor outputs from both of the optical sensor and the touch sensor can be obtained, an improvement can be expected in the sensor sensitivity and the sensor accuracy with respect to a touching operation.
An optical sensor system utilizing photodiodes or the like can be used, not only as a function of a touch panel, but also as a function of a scanner or the like, in an optical-sensor-equipped display apparatus. The optical sensor system, however, tends to be influenced by external light easily, and therefore the performance thereof as a touch panel tends to depend on a state of the external light. Thus, the optical sensor system is not suitable for mobile equipment that is expected to be used under various environments.
Then, a configuration in which microswitches are provided in a panel can be considered possible as a configuration that allows the function as a touch panel to be exhibited under any environment. For example, by adding a function of a microswitch to an optical sensor circuit, an advantage that a function as a touch panel can be added to a device using optical sensors, and an advantage that the touch panel function can be achieved under any environment are achieved, whereby an ideal sensor function can be realized.
On the other hand,
It is an object of the present invention to realize a configuration that makes it possible to obtain a highly accurate sensor output, in a sensor circuit and a display apparatus having an optical sensor and a touch sensor.
A sensor circuit or a display apparatus according to one embodiment of the present invention includes: a photodetecting element that receives incident light; an accumulation part that is connected to the photodetecting element via an accumulation node and accumulates charges according to an electric current having flown through the photodetecting element; a reset signal line for supplying, to the accumulation node, a reset signal including reset voltage application for initializing a potential of the accumulation node; a readout signal line for supplying, to the accumulation node, a readout signal including readout voltage application for outputting the potential of the accumulation node; a sensor switching element that is connected to an output line, so as to make the accumulation node and the output line conductive with each other in response to the readout voltage application, and to output an output signal according to the potential of the accumulation node to the output line; a switch that is capable of switching connection and disconnection between the accumulation node and an input electrode to which a voltage is supplied, and that provides connection when a pressure is applied by a touching operation; and a control switching element that is connected to between the switch and the accumulation node, and has a control electrode to which a control signal for switching conduction and non-conduction between the switch and the accumulation node is input.
The present embodiment makes it possible to provide a sensor circuit and a display apparatus in which a highly accurate sensor output can be obtained from an optical sensor and a touch sensor.
(a) of
(a) of
(a) of
(a) of
(a) of
(a) of
(a) of
(a) of
(a) of
(a) of
(a) of
(a) of
(a) of
(a) of
(a) of
(a) of
(a) of
(a) of
(1) A sensor circuit according to one embodiment of the present invention includes: a photodetecting element that receives incident light; an accumulation part that is connected to the photodetecting element via an accumulation node and accumulates charges according to an electric current having flown through the photodetecting element; a reset signal line to which a reset signal for initializing a potential of the accumulation node is supplied; a readout signal line to which a readout signal for outputting the potential of the accumulation node is supplied; a sensor switching element that is connected to an output line, so as to make the accumulation node and the output line conductive with each other in response to input of the readout signal, and to output an output signal according to the potential of the accumulation node to the output line; a switch that is capable of switching connection and disconnection between the accumulation node and an input electrode to which a voltage is supplied, and that provides connection when a pressure is applied by a touching operation; and a control switching element that is connected to between the switch and the accumulation node, and has a control electrode to which a control signal for switching conduction and non-conduction between the switch and the accumulation node is input (first configuration).
In this configuration, charges are accumulated in the accumulation node according to an electric current having flown through the photodetecting element. Therefore, the potential of the accumulation node after the initialization by input of the reset signal varies with the electric current having flown through the photodetecting element. The potential of the accumulation node is read out by the sensor switching element when the readout signal is input. Therefore, an output signal according to the potential of the accumulation node is output from the sensor switching element.
Here, since the accumulation node is connected to the switch via the control switching element, the influence given by the connection state of the switch upon readout onto the potential of the accumulation node can be controlled by the control switching element. This makes it possible to control the detection regarding whether both of the connection state of the switch and the electric current flowing through the photodetecting element are to be detected, or either one of these is to be detected. For example, when the switch is in the connection state, the accumulation node is connected to the input electrode, and by making the control switching element conductive upon the readout voltage application, charges in the accumulation part can be transferred to the input electrode. By doing so, a touching operation can be detected according to the potential of the accumulation node upon readout. Moreover, since the potential of the accumulation node transfers, a floating state of the potential of the accumulation node that would cause the sensor output to be kept in an ON state can be avoided, whereby an accurate sensor output can be obtained. Further, when there is no touching operation and the switch is in a disconnection state, a potential of the accumulation node according to an amount of an electric current of the photodetecting element is output.
(2) In the above-described first configuration, the control electrode of the control switching element may be connected to a control line that supplies the control signal (second configuration). This configuration makes it possible to control conduction and non-conduction of the control switching element at an arbitrary timing by using the control line.
(3) In the above-described second configuration, the input electrode may be connected to a reference voltage line to which a voltage is supplied (third configuration). This configuration makes it possible to discharge charges of the accumulation part by using the reference voltage line connected to the sensor circuit. For example, in the case where the aforementioned configuration is applied to a liquid crystal display device, the input electrode may be connected to a counter electrode provided on a counter substrate, a reference power supply voltage provided on an active matrix substrate, etc.
(4) In the second configuration, the input electrode may be connected to the reset signal line (fourth configuration). This configuration makes it possible to discharge charges of the accumulation part by using the reset signal line indispensable for the sensor circuit. Therefore, the number of lines in the sensor circuit can be reduced, whereby an aperture ratio can be increased.
(5) In the second configuration, the input electrode may be connected to the readout signal line (fifth configuration). This configuration makes it possible to discharge charges of the accumulation part by using the readout signal line indispensable for the sensor circuit. Therefore, the number of lines in the sensor circuit can be reduced, whereby an aperture ratio can be increased.
(6) In any one of the above-described first through fifth configuration, the sensor circuit preferably operates in operation modes that include: an operation mode in which the control switching element is caused to operate according to the control signal when the readout signal is input so that the switch and the accumulation node become conductive with each other; and an operation mode in which the control switching element is caused to operate according to the control signal so that the switch and the accumulation node are always non-conductive with each other (sixth configuration).
This configuration makes it possible to arbitrarily select an operation mode in which the control switching element operates, and therefore to obtain a sensor output according to the operation mode. For example, it is possible to select an operation mode in which the switch and the accumulation node are made conductive with each other so that the presence/absence of a touching operation can be detected, and an operation mode in which the switch and the accumulation node are made non-conductive with each other so that an amount of an electric current of the photodetecting element can be determined. In each operation mode, highly accurate sensing can be performed based on the potential of the accumulation node.
(7) In the first configuration, the control electrode of the control switching element may be connected to the readout signal line (seventh configuration). This configuration makes it possible to control the control switching element by using the readout signal line indispensable for the sensor circuit. Therefore, since a line for connection to the control electrode of the control switching element is unnecessary, the number of lines in the sensor circuit can be reduced, whereby the aperture ratio can be increased.
(8) In the seventh configuration, the input electrode may be also connected to the readout signal line (eighth configuration). In this configuration, not only the control electrode of the control switching element but also the switch is connected to the readout signal line, and therefore, the operation of the switch is made effective exclusively during the readout period. Consequently, a touching operation can be made effective exclusively during the readout period.
(9) In the seventh or eighth configuration, the sensor circuit preferably operates in operation modes that include: an operation mode in which a readout signal for making the control switching element conductive when the readout signal is input is supplied to the readout signal line; and an operation mode in which a readout signal for making the control switching element non-conductive when the readout signal is input is supplied to the readout signal line (ninth configuration).
This configuration makes it possible to arbitrarily select an operation mode in which the control switching element operates, and therefore to obtain a sensor output according to the operation mode. For example, it is possible to select an operation mode in which the control switching element is made conductive so that the presence/absence of a touching operation can be detected, and an operation mode in which the control switching element is made non-conductive so that an amount of an electric current of the photodetecting element can be determined. In each operation mode, highly accurate sensing can be performed based on the potential of the accumulation node.
(10) In the above-described first configuration, it is preferable that the control electrode of the control switching element is connected to the reset signal line, and the input electrode is connected to the readout signal line (tenth configuration).
This configuration makes it possible to control the control switching element by using the reset signal line indispensable for the sensor circuit. Therefore, the number of lines in the sensor circuit can be reduced, whereby the aperture ratio can be increased. Besides, since the switch is connected to the readout signal line, the operation of the switch is made effective exclusively during the readout period. Consequently, a touching operation can be made effective exclusively during the readout period.
(11) In the tenth configuration, the sensor circuit preferably operates in operation modes that include: an operation mode in which a voltage of the readout signal is set so that the control switching element becomes conductive when the reset signal is input; and an operation mode in which a voltage of the readout signal is set so that the control switching element becomes non-conductive when the reset signal is input (eleventh configuration).
This configuration makes it possible to arbitrarily select an operation mode in which the control switching element operates, and therefore to obtain a sensor output according to the operation mode. For example, it is possible to select an operation mode in which the control switching element is made conductive so that the presence/absence of a touching operation can be detected, and an operation mode in which the control switching element is made non-conductive so that an amount of an electric current of the photodetecting element can be determined. In each operation mode, highly accurate sensing can be performed based on the potential of the accumulation node.
(12) The sensor circuit of each above-described sensor circuit can be applied to a display apparatus that includes an optical sensor in a pixel region of an active matrix substrate (twelfth configuration).
(13) In the twelfth configuration, the switch preferably includes: a first electrode that is provided on the active matrix substrate and is connected to the accumulation node; and a second electrode that is provided on a counter substrate and is connected to the input electrode, wherein the first electrode and the second electrode are brought into contact with each other when the counter substrate is pressed by a touching operation with respect to the pixel region (thirteenth configuration).
(14) In the twelfth configuration, the switch preferably includes: a first electrode that is provided on the active matrix substrate and is connected to the accumulation node; and a second electrode that is provided on the active matrix substrate at a distance from the first electrode, and is connected to the input electrode, wherein the first electrode and the second electrode are brought into contact with a conductor provided on a counter substrate and become conductive with each other when the counter substrate is pressed by a touching operation with respect to the pixel region (fourteenth configuration).
(15) A sensor circuit according to one embodiment of the present invention includes: a photodetecting element that receives incident light; an accumulation part that accumulates a potential according to an output electric current of the photodetecting element, in an accumulation node; a reset signal line to which a reset signal for initializing a potential of the accumulation node is supplied; a readout signal line to which a readout signal for reading out the potential of the accumulation node is supplied; an amplification part that reads out the potential of the accumulation node in response to the readout signal and outputs an output signal according to the potential; a switch for switching connection and disconnection from one to the other in response to a pressure applied by a touching operation; and a control switching element that controls conduction and non-conduction between the switch and the accumulation node, wherein the sensor circuit operates in at least two operation modes among an imager mode, a touch mode, and a hybrid mode, wherein in the imager mode, the control switching element is controlled so that the potential of the accumulation node depends on an electric current that has flown through the photodetecting element during a period from the initialization by the reset signal to the readout by the readout signal; in the touch mode, the control switching element is controlled so that the potential of the accumulation node depends on a connection state of the switch upon the readout by the readout signal; and in the hybrid mode, the control switching element is controlled so that the potential of the accumulation node depends on both of the electric current having flown through the photodetecting element and the connection state of the switch (fifteenth configuration).
In this configuration, since charges are accumulated in the accumulation node according to an electric current having flown through the photodetecting element, the potential of the accumulation node after the initialization by input of the reset signal varies with the electric current having flown through the photodetecting element. The potential of the accumulation node is read out by the amplification part upon the readout voltage application. As a result, an output signal according to the potential of the accumulation node is output from the amplification part.
Here, since the accumulation node is connected to the switch via the control switching element, the influence given by the connection state of the switch upon readout onto the potential of the accumulation node can be controlled by the control switching element. This makes it possible to control the detection regarding whether both of the connection state of the switch and the electric current flowing through the photodetecting element are to be detected, or either one of these is to be detected. Besides, this configuration makes it possible to arbitrarily select an operation mode in which the control switching element operates, and therefore to obtain a sensor output according to the operation mode. Consequently, in each operation mode, highly accurate sensing can be performed based on the potential of the accumulation node.
(16) In the fifteenth configuration, it is preferable that in the imager mode, a voltage of the reset signal is set so that charges according to an electric current having flown through the photodetecting element are accumulated in the accumulation part during a period from the initialization of the accumulation node by the reset signal to the readout by the readout signal; and the control switching element is controlled so that it is non-conductive at least upon the readout (sixteenth configuration).
(17) In the fifteenth configuration, it is preferable that, in the touch mode, the voltage of the reset signal is set so that the accumulation node is initialized upon the readout, and the control switching element is controlled so that it is conductive upon the readout (seventeenth configuration).
(18) In the fifteenth configuration, it is preferable that, in the hybrid mode, the control switching element is controlled so that it is conductive upon readout; a voltage of the reset signal is set so that charges according to an electric current having flown through the photodetecting element are accumulated in the accumulation part during a period from the initialization of the accumulation node by the reset signal to the readout by the readout signal; and when the switch is conductive upon readout, a voltage is applied to the switch (eighteenth configuration).
Hereinafter, more specific embodiments of the present invention are explained with reference to the drawings. It should be noted that the following embodiments show exemplary configurations in the case where a display apparatus is embodied as a liquid crystal display device, but the display apparatus is not limited to a liquid crystal display device, and the present invention is applicable to an arbitrary display apparatus in which an active matrix substrate is used. It should be noted that a display apparatus, as having optical sensors, is assumed to be used as a touch-panel-equipped display device that detects an object approaching its screen and carries out an input operation, as a display apparatus for two-way communication having a display function and an image pickup function, etc.
Further, the drawings referred to hereinafter show, in a simplified manner, only principal members needed for explanation of the present invention among composing members of the embodiment of the present invention, for convenience of explanation. Therefore, a display apparatus according to the present embodiment may include arbitrary members that are not shown in the drawings that the present specification refers to. Further, the dimensions of the members shown in the drawings do not faithfully reflect actual dimensions of composing members, dimensional ratios of the members, etc.
First, a configuration of an active matrix substrate provided in a liquid crystal display device according to First Embodiment is explained with reference to
The sensor column driver 4 includes a sensor pixel readout circuit 41, a sensor column amplifier 42, and a sensor column scanning circuit 43. To the sensor pixel readout circuit 41, an output line SOUT (see
The sensor column amplifier 42 incorporates N column amplifiers that correspond to N columns of optical sensors in the pixel region 1, respectively. The sensor column amplifier 42 amplifies the peak hold voltage VSj (j=1 to N) by each column amplifier, thereby outputting it as VCOUT to the buffer amplifier 6. The sensor column scanning circuit 43 outputs a column select signal CSj (j=1 to N) to the sensor column amplifier 42 in order to connect the column amplifiers of the sensor column amplifier 42 sequentially to the output of the buffer amplifier 6. The buffer amplifier 6 further amplifies VCOUT output from the sensor column amplifier 42, and outputs the same as a panel output VOUT to the signal processing circuit 8 via the FPC connector 7.
It should be noted that the above-described members on the active matrix substrate 100 may be formed monolithically on the glass substrate through semiconductor processing. Alternatively, the configuration may be as follows: the amplifiers and drivers among the above-described members may be mounted on the glass substrate by, for example, COG (chip on glass) techniques. Further alternatively, at least a part of the aforementioned members shown on the active matrix substrate 100 in
The pixel region 1 is a region where a plurality of pixels are formed for displaying images. In the present embodiment, an optical sensor for capturing images is provided in each pixel in the pixel region 1.
As shown in
At each of intersections of the gate lines GL and the source lines COL, a thin-film transistor (TFT) M1 is provided as a switching element for a pixel. It should be noted that in
In
Further, for a color dot driven by a thin-film transistor M1g connected to an intersection of the gate line GLi and the source line COLgj, a green color filter is provided so as to correspond to this color dot. This color dot is supplied with image data of green color from the display source driver 3 via the source line COLgj, thereby functioning as a green color dot.
Still further, for a color dot driven by a thin-film transistor M1b connected to an intersection of the gate line GLi and the source line COLbj, a blue color filter is provided so as to correspond to this color dot. This color dot is supplied with image data of blue color from the display source driver 3 via the source line COLbj, thereby functioning as a blue color dot.
It should be noted that in the example shown in
The sensor circuit includes a photodiode D1, a capacitor CINT, a thin-film transistor M2, a thin-film transistor M4, and a microswitch S1, as shown in
In the example shown in
To an anode of the photodiode D1, which is the photodetecting element, the line RST (reset signal line) for supplying a reset signal is connected. To a cathode of the photodiode D1, a gate of the thin-film transistor M2, one of electrodes of the capacitor CINT, and a drain of the thin-film transistor M4, which is a control switching element, are connected. At a junction point to which the gate of the thin-film transistor M2, the one of electrodes of the capacitor CINT, and the drain of the thin-film transistor M4 are connected, the accumulation node is formed.
Regarding the thin-film transistor M2, which is the sensor switching element, a drain thereof is connected to the line VDD, and a source thereof is connected to the line OUT. Regarding the thin-film transistor M4, a source thereof is connected to one of the microswitch S1 (switch), and a gate thereof is connected to a line MODE. Further, an input electrode 50 connected to the other electrode of the microswitch S1 is connected to a counter electrode (VCOM). It should be noted that the line MODE is intended to supply a mode control signal that is used for controlling an operation mode, which will be described later.
The lines RST for supplying a reset signal and the lines RWS for supplying a readout signal (readout signal lines) are connected to the sensor row driver 5. These lines RST and RWS are provided per each row. Therefore, hereinafter, when the lines should be distinguished, they are denoted by RSTi and RWSi (i=1 to M).
The sensor row driver 5 selects the lines RSTi and RWSi in combination shown in
It should be noted that, as shown in
In the configuration of
Here, an operation of the sensor circuit shown in
As an exemplary hybrid mode, a case where the microswitch S1 and the photodiode D1 are caused to function is explained hereinafter. In
(a) of
The sensor circuit according to the present embodiment is capable of amplifying and reading out variation of the potential of the accumulation node in the integration period TINT, as shown in (b) of
First, when the high-level reset signal VRST. H is supplied to the line RST, the photodiode D1 is forward-biased, and the potential VINT of the gate of the thin-film transistor M2 is therefore expressed by the following formula (1):
V
INT
=V
RST. H
−V
F (1)
In the formula (1), VF is a forward voltage of the photodiode D1. Since VINT herein is lower than a threshold voltage of the thin-film transistor M2, the thin-film transistor M2 is non-conductive during a period while the high-level reset signal VRST. H is being supplied. Here, the state where the high-level reset signal VRST. H corresponds to a state where a reset voltage is applied.
Next, the reset signal returns to the low level VRST. L (at the timing of t=TRST in (b) of
V
INT
=V
RST. H
−V
F
−ΔV
RST
·C
PD
/C
T
−I
PHOTO
·T
INT
/C
T (2)
In the formula (2), ΔVRST represents a height of a pulse of the reset signal (VRST. H−VRST.L), IPHOTO represents a photoelectric current of the photodiode D1, and TINT represents a duration of the integration period. CPD represents a capacitance of the photodiode D1. CT represents a sum of a capacitance of the capacitor CINT, the capacitance CPD of the photodiode D1, and a capacitance CTFT of the thin-film transistor M2. During the integration period also, since the VINT is lower than the threshold voltage of the thin-film transistor M2, the thin-film transistor M2 is non-conductive.
After the integration period ends, at the timing t=TRWS shown in (b) of
Here, a case where the microswitch S1 is in an OFF state (in a non-touched state) is explained. When the readout signal is supplied, the injection of charges into the capacitor CINT occurs. The potential VINT of the gate of the thin-film transistor M2 in this state is expressed by the following formula (3):
V
INT
=V
RST. H
−V
F
−ΔV
RST
·C
PD
/C
T
−I
PHOTO
·T
INT
/C
T
+ΔV
RWS
·C
INT
/C
T (3)
ΔVRWS is a height of a pulse of the readout signal (VRST. H−VRWS. L). With this, the potential VINT of the gate of the thin-film transistor M2 becomes higher than the threshold voltage thereof, and this causes the thin-film transistor M2 to become conductive. Thus, the thin-film transistor M2, together with the thin-film transistor M3 provided at an end of the line OUT in each column, functions as a source-follower amplifier (amplification part). In other words, the sensor output voltage VPIX from the thin-film transistor M2 is proportional to an integral of the photoelectric current of the photodiode D1 during the integration period.
On the other hand, a case where the microswitch S1 is in the ON state (in a touched state) is as explained below. As is the case with the above-described case, when the readout signal is supplied, the injection of charges to the capacitor CINT occurs. However, since the microswitch S1 is connected to the counter electrode (VCOM), the charges of the capacitor CINT transfer to the counter electrode (VCOM) side via the thin-film transistor M4 and the microswitch S1. As a result, the potential VINT of the gate of the thin-film transistor M2 becomes substantially equal to the potential of the counter electrode (VCOM).
In this case, the thin-film transistor M2 becomes non-conductive. Therefore, the touched state (a state where the microswitch S1 is in the ON state) can be detected based on the absence of any sensor output from the thin-film transistor M2 during the sensing period.
In (b) of
As shown in (b) of
As described above, in the present embodiment, the initialization by the reset pulse, the integration of an electric current during the integration period, and the readout of a sensor output during the readout period, which are assumed to constitute one cycle, are performed cyclically. By doing so, a floating state of charges that would cause the sensor output to be kept in an ON state can be avoided, and therefore, an output of the sensor circuit at each pixel can be obtained accurately.
As an exemplary imager mode, a case where the microswitch S1 is not caused to function and only the photodiode D1 is caused to function is explained hereinafter. In order to cause only the photodiode D1 to function, a high-level voltage is not supplied to the line MODE (i.e., a state where VMODE. L is supplied is kept), as shown in (a) of
When the readout signal is supplied, the injection of charges into the capacitor CINT occurs. The potential VINT of the gate of the thin-film transistor M2 in this state is expressed by the aforementioned formula (3). As is the case with the “hybrid mode” described above, the potential VINT of the gate of the thin-film transistor M2 is made higher than the threshold voltage of the thin-film transistor M2 by ΔVRWS, which makes the thin-film transistor M2 conductive. Thus, the thin-film transistor M2, together with the thin-film transistor M3 provided at an end of the line OUT in each column, functions as a source follower amplifier.
In (b) of
As an exemplary touch mode, a case where the photodiode D1 is not caused to function and only the microswitch S1 is caused to function is explained hereinafter. In order to cause only the microswitch S1 to function, a forward voltage of the photodiode D1 is prevented from being generated. As a method for preventing a forward voltage of the photodiode D1 from being generated, the low level VRST. L and the high level VRST. H of the reset signal may be set to the same voltage. For example, as shown in (a) of
As is the case with the “hybrid mode” described above, the thin-film transistor M4 is turned on by supplying the readout signal to the line RWS and at the same time, supplying the mode control signal to the line MODE. This is intended to avoid the junction node VINT assuming a floating state thereby causing the thin-film transistor M3 to be kept in an ON state.
When the microswitch S1 is in the OFF state (in the non-touched state) upon the supply of the readout signal, the potential VINT of the gate of the thin-film transistor M2 becomes higher than the threshold voltage, like when the microswitch S1 is in the OFF state in the above-described “hybrid mode”. This causes the thin-film transistor M2 to become conductive, and the thin-film transistor M2, together with the thin-film transistor M3 provided at an end of the line OUT in each column, functions as a source follower amplifier.
When the microswitch S1 is in the ON state (in the touched state) upon the supply of the readout signal, the injection of charges into the capacitor CINT occurs in response to the readout signal, like when the microswitch S1 is in the ON state in the above-described “hybrid mode”. Since the microswitch S1 is, however, connected to the counter electrode (VCOM), charges in the capacitor CINT transfer to the counter electrode (VCOM) side via the thin-film transistor M4 and the microswitch S1. As a result, the potential VINT of the gate of the thin-film transistor M2 becomes substantially equal to the potential of the counter electrode (VCOM).
In this case, the thin-film transistor M2 becomes non-conductive. Therefore, based on the absence of any sensor output from the thin-film transistor M2 during the sensing period, the touched state can be detected.
In (b) of
In this configuration, the lines RST and RWS are formed with the same metal as the metal of the gate electrode 101 of the thin-film transistor M2, and on the same layer through the same process as the layer and the process for the gate electrode 101. Besides, the lines 104, 108, 118, and 119 are formed with the same metal as the metal of the source line COL, and on the same layer through the same process as the layer and the process for the source line COL. On the backside of the photodiode D1, a light shielding film 113 for preventing backlight from being incident on the photodiode D1 is provided.
Further, as shown in
Further, the thin-film transistor M4 is formed in a region between the extended portion 107 of the silicon film connected to the contact 106 and the line 119. The line MODE is connected to a gate electrode 115 of the thin-film transistor M4 via a line 118 and contact holes 116 and 117. The microswitch S1 is formed with an ITO 122 shown in
As has been described so far, by controlling the thin-film transistor M4 by controlling the mode control signal supplied to the line MODE, the microswitch S1 can be controlled so that it is made effective or ineffective. Therefore, the optical sensor function based on the photodiode D1 and the touch sensor function based on the microswitch S1 can be used selectively. The selective use of the optical sensor function and the touch sensor function makes it possible to select a function corresponding to an application displayed on the display apparatus.
Hereinafter, Second Embodiment is explained. The members having the same functions as those of First Embodiment explained above are denoted by the same reference numerals as those in First Embodiment, and detailed explanations of the same are omitted.
Hereinafter, Third Embodiment is explained. The members having the same functions as those of First Embodiment explained above are denoted by the same reference numerals as those in First Embodiment, and detailed explanations of the same are omitted.
As shown in
An exemplary case where the sensor circuit according to the present embodiment is caused to operate in the hybrid mode is shown in
The sensor circuit according to the present embodiment is capable of reading out an amplified variation of a potential of the accumulation node during the integration period TINT, as shown in (b) of
First, when the high-level reset signal VRST. H is supplied from the line RST to the sensor circuit, the photodiode D1 is forward-biased. Here, since the mode control signal is at the low level, the thin-film transistor M4 is non-conductive. Therefore, the potential VINT of the gate of the thin-film transistor M2 is expressed by a formula identical to the above-described formula (1). Here, since VINT is lower than the threshold voltage of the thin-film transistor M2, the thin-film transistor M2 is non-conductive during a period while the high-level reset signal VRST. H is being supplied.
Next, the reset signal returns to the low level VRST. L (at the timing of t=TRST in (b) of
Here, the potential VINT of the gate of the thin-film transistor M2 at the end of the integration period is determined by the above-described formula (2). During the integration period also, VINT is lower than the threshold voltage of the thin-film transistor M2, and the thin-film transistor M2 is therefore non-conductive.
After the integration period ends, at the timing t=TRWS shown in (b) of
Here, a case where the microswitch S1 is in an OFF state (in a non-touched state) is explained. When the readout signal is supplied, the injection of charges into the capacitor CINT occurs. The potential VINT of the gate of the thin-film transistor M2 in this state is expressed by the above-described formula (3). Thus, the potential VINT of the gate of the thin-film transistor M2 becomes higher than the threshold voltage of the thin-film transistor M2, and this causes the thin-film transistor M2 to become conductive. Therefore, the thin-film transistor M2, together with the thin-film transistor M3 provided at an end of the line OUT in each column, functions as a source-follower amplifier. The sensor output voltage VINT from the thin-film transistor M2 is proportional to an integral of the photoelectric current of the photodiode D1 during the integration period.
On the other hand, a case where the microswitch S1 is in an ON state (in a touched state) is explained below. As is the case with the above-described case, when the readout signal is supplied, the injection of charges to the capacitor CINT occurs. However, since the microswitch S1 is connected to the line RST, the charges of the capacitor CINT transfer to the line RST side via the thin-film transistor M4 and the microswitch S1. As a result, the potential VINT of the gate of the thin-film transistor M2 becomes substantially equal to the potential (−7 V) of the line RST.
In this case, the thin-film transistor M2 becomes non-conductive. Therefore, the touched state can be detected based on the absence of any sensor output from the thin-film transistor M2 during the sensing period.
In (b) of
As described above, in the present embodiment, even when the readout signal is applied from the line RWS, charges injected into the capacitor CINT transfer to the line RST side via the microswitch S1 in the ON state, and therefore, the potential of VINT does not rise even during the readout period. Consequently, a floating state of charges that would cause the sensor output to be kept in an ON state can be avoided, and therefore, an output of the sensor circuit at each pixel can be obtained accurately.
In order to cause only the photodiode D1 to function, the voltage of the line MODE is kept at the same level as the low level VRST. L of the reset signal (i.e., a state where VMODE. L is supplied is kept), as shown in (a) of
When the readout signal is supplied, the injection of charges into the capacitor CINT occurs. The potential VINT of the gate of the thin-film transistor M2 in this state is expressed by the above-described formula (3). As is the case with the “hybrid mode” described above, the potential VINT of the gate of the thin-film transistor M2 is made higher than the threshold voltage of the thin-film transistor M2 by ΔVRWS, which makes the thin-film transistor M2 conductive. Thus, the thin-film transistor M2, together with the thin-film transistor M3 provided at an end of the line OUT in each column, functions as a source follower amplifier.
In (b) of
Like when the microswitch S1 is in the OFF state in the “hybrid mode” described above, the sensor output voltage VPIX from the thin-film transistor M2 is proportional to an integral of the photoelectric current of the photodiode D1 during the integration period.
In order to cause only the microswitch S1 to function, a forward voltage of the photodiode D1 is prevented from being generated. As a method for preventing a forward voltage of the photodiode D1 from being generated, the low level VRST. L and the high level VRST. H of the reset signal may be set to the same voltage. For example, as shown in (a) of
In this case, as is the case with the “hybrid mode” described above, the thin-film transistor M4 has to be turned on by supplying the readout signal to the line RWS and at the same time, supplying the mode control signal to the line MODE. This is intended to avoid the junction node VINT assuming a floating state.
When the microswitch S1 is in the OFF state (in the non-touched state), the potential VINT of the gate of the thin-film transistor M2 becomes higher than the threshold voltage of the thin-film transistor M2, like when the microswitch S1 is in the OFF state in the above-described “hybrid mode”. This causes the thin-film transistor M2 to become conductive, and the thin-film transistor M2, together with the thin-film transistor M3 provided at an end of the line OUT in each column, functions as a source follower amplifier.
When the microswitch S1 is in the ON state (in the touched state), the injection of charges into the capacitor CINT occurs upon the supply of the readout signal, like when the microswitch S1 is in the ON state in the above-described “hybrid mode”. Since the microswitch S1 is, however, connected to the line RST, charges in the capacitor CINT transfer to the line RST side via the thin-film transistor M4 and the microswitch S1. As a result, the potential VINT of the gate of the thin-film transistor M2 becomes substantially equal to the voltage of the reset signal line.
In this case, the thin-film transistor M2 becomes non-conductive. Therefore, based on the absence of any sensor output from the thin-film transistor M2 during the sensing period, the touched state can be detected.
In (b) of
Hereinafter, Fourth Embodiment is explained. The members having the same functions as those of First Embodiment explained above are denoted by the same reference numerals as those in First Embodiment, and detailed explanations of the same are omitted.
As shown in
An exemplary case where the sensor circuit according to the present embodiment is caused to operate in the hybrid mode is shown in
The sensor circuit according to the present embodiment is capable of reading out an amplified variation of a potential of the accumulation node during the integration period TINT, as shown in (b) of
First, when the high-level reset signal VRST. H is supplied from the line RST to the sensor circuit, the photodiode D1 is forward-biased. Here, since the mode control signal is at the low level, the thin-film transistor M4 is non-conductive. Therefore, the potential VINT of the gate of the thin-film transistor M2 is therefore expressed by a formula identical to the above-described formula (1). Here, since VINT is lower than the threshold voltage of the thin-film transistor M2, the thin-film transistor M2 is non-conductive during a period while the high-level reset signal VRST. H is being supplied.
Next, the reset signal returns to the low level VEST. L (at the timing of t=TRST in (b) of
Here, the potential VINT of the gate of the thin-film transistor M2 at the end of the integration period is determined by the above-described formula (2). During the integration period also, VINT is lower than the threshold voltage of the thin-film transistor M2, and the thin-film transistor M2 is therefore non-conductive.
After the integration period ends, at the timing t=TRWS shown in (b) of
Here, a case where the microswitch S1 is in the OFF state (in the non-touched state) is explained. When the readout signal is supplied, the injection of charges into the capacitor CINT occurs. As a result, the potential VINT of the gate of the thin-film transistor M2 is expressed by the above-described formula (3). Thus, the potential VINT of the gate of the thin-film transistor M2 becomes higher than the threshold voltage of the thin-film transistor M2, and this causes the thin-film transistor M2 to become conductive. Therefore, the thin-film transistor M2, together with the thin-film transistor M3 provided at an end of the line OUT in each column, functions as a source-follower amplifier. The sensor output voltage VPIX from the thin-film transistor M2 is proportional to an integral of the photoelectric current of the photodiode D1 during the integration period.
On the other hand, a case where the microswitch S1 is in the ON state (in the touched state) is explained below. Since the microswitch S1 is connected to the line RWS, when the readout signal is supplied, the potential VINT of the gate of the thin-film transistor M2 is boosted up via the microswitch S1 and the thin-film transistor M4. Therefore, the potential VINT of the gate of the thin-film transistor M2 has a value obtained by subtracting the threshold voltage of the thin-film transistor M4 from the high level VRWS. H of the readout signal.
In this case, the potential VINT of the gate of the thin-film transistor M2 is higher than the threshold voltage of the thin-film transistor M2, and the thin-film transistor M2 therefore becomes conductive. As a result, the thin-film transistor M2, together with the thin-film transistor M3 provided at an end of the line OUT in each column, functions as a source-follower amplifier. In other words, the sensor output voltage VPIX from the thin-film transistor M2 coincides with a value obtained by subtracting the threshold voltage of the thin-film transistor M4 from a supplied voltage of the readout signal.
In (b) of
As described above, in the present embodiment, when the readout signal is applied from the line RWS, the potential of VINT to is caused to rise via the microswitch S1 in the ON state. After the readout period, the readout signal returns to the low level VRWS. L, and charges flow from VINT into the capacitor CINT. Consequently, a floating state of charges that would cause the sensor output to be kept in an ON state can be avoided, and therefore, an output of the sensor circuit at each pixel can be obtained accurately.
As shown in (b) of
In order to cause only the photodiode D1 to function, the voltage of the line MODE is kept at the same level as the low level VRST. L of the reset signal (i.e., a state where VMODE. L is supplied is kept), as shown in (a) of
When the readout signal is supplied, the injection of charges into the capacitor CINT occurs. The potential VINT of the gate of the thin-film transistor M2 in this state is expressed by the above-described formula (3). As is the case with the “hybrid mode” described above, the potential VINT of the gate of the thin-film transistor M2 is made higher than the threshold voltage of the thin-film transistor M2 by ΔVRWS, which makes the thin-film transistor M2 conductive. Thus, the thin-film transistor M2, together with the thin-film transistor M3 provided at an end of the line OUT in each column, functions as a source follower amplifier.
In (b) of
Like when the microswitch S1 is in the OFF state in the “hybrid mode” described above, the sensor output voltage VPIX from the thin-film transistor M2 is proportional to an integral of the photoelectric current of the photodiode D1 during the integration period.
In order to cause only the microswitch S1 to function, a forward voltage of the photodiode D1 is prevented from being generated. As a method for preventing a forward voltage of the photodiode D1 from being generated, the low level VRST. L and the high level VRST. H of the reset signal may be set to the same voltage. For example, as shown in (a) of
In this case, as is the case with the “hybrid mode” described above, the thin-film transistor M4 has to be turned on by supplying the readout signal to the line RWS and at the same time, supplying the mode control signal to the line MODE. This is intended to avoid the junction node VINT assuming a floating state.
When the microswitch S1 is in the OFF state (in the non-touched state), the potential VINT of the gate of the thin-film transistor M2 becomes higher than the threshold voltage thereof, like when the microswitch S1 is in the OFF state in the above-described “hybrid mode”. This causes the thin-film transistor M2 to become conductive, and the thin-film transistor M2, together with the thin-film transistor M3 provided at an end of the line OUT in each column, functions as a source follower amplifier.
When the microswitch S1 is in the ON state (in the touched state), the potential VINT of the gate of the thin-film transistor M2 is boosted up upon the supply of the readout signal, like when the microswitch S1 is in the ON state in the “hybrid mode” described above. More specifically, since the microswitch S1 is connected to the line RWS, when the readout signal is supplied, the potential VINT of the gate of the thin-film transistor M2 is boosted up via the microswitch S1 and the thin-film transistor M4. Therefore, the potential VINT of the gate of the thin-film transistor M2 has a value obtained by subtracting the threshold voltage of the thin-film transistor M4 from the high level VRWS. H of the readout signal.
In this case, the thin-film transistor M2 becomes conductive, since the potential VINT of the gate of the thin-film transistor M2 is higher than the threshold voltage of the thin-film transistor M2. Therefore, the thin-film transistor M2, together with the thin-film transistor M3 provided at an end of the line OUT in each column, functions as a source follower amplifier. In other words, the sensor output voltage VPIX from the thin-film transistor M2 coincides with a value obtained by subtracting the threshold voltage of the thin-film transistor M4 from a supplied voltage of the readout signal.
In (b) of
Hereinafter, Fifth Embodiment is explained. The members having the same functions as those of First Embodiment explained above are denoted by the same reference numerals as those in First Embodiment, and detailed explanations of the same are omitted.
As shown in
An exemplary case where the sensor circuit according to the present embodiment is caused to operate in the hybrid mode is shown in
The sensor circuit according to the present embodiment is capable of reading out an amplified variation of a potential of the accumulation node during the integration period TINT, as shown in (b) of
First, when the high-level reset signal VEST. H is supplied from the line RST to the sensor circuit, the photodiode D1 is forward-biased. Therefore, the potential VINT of the gate of the thin-film transistor M2 is therefore expressed by a formula identical to the above-described formula (1). Here, since VINT is lower than the threshold voltage of the thin-film transistor M2, the thin-film transistor M2 is non-conductive during a period while the high-level reset signal VRST. H is being supplied.
Next, the reset signal returns to the low level VEST. L (at the timing of t=TRST in (b) of
Here, the potential VINT of the gate of the thin-film transistor M2 at the end of the integration period is determined by the above-described formula (2). During the integration period also, VINT is lower than the threshold voltage of the thin-film transistor M2, and the thin-film transistor M2 is therefore non-conductive.
After the integration period ends, at the timing t=TRWS shown in (b) of
Here, a case where the microswitch S1 is in an OFF state (in a non-touched state) is explained. When the sensor circuit is supplied with the readout signal, the injection of charges into the capacitor CINT occurs. Here, a voltage is supplied to the control electrode of the thin-film transistor M4 by the readout signal, but since the microswitch S1 is in the OFF state, the operation of the thin-film transistor M4 does not assume influence on the potential VINT. The potential VINT of the gate of the thin-film transistor M2 in this state is expressed by the above-described formula (3). Thus, the potential VINT of the gate of the thin-film transistor M2 becomes higher than the threshold voltage of the thin-film transistor M2, and this causes the thin-film transistor M2 to become conductive. The thin-film transistor M2, together with the thin-film transistor M3 provided at an end of the line OUT in each column, functions as a source-follower amplifier. In other words, the sensor output voltage VPIX from the thin-film transistor M2 is proportional to an integral of the photoelectric current of the photodiode D1 during the integration period.
On the other hand, a case where the microswitch S1 is in an ON state (in a touched state) is explained below. As is the case with the above-described case where the microswitch S1 is in the OFF state, when the readout signal is supplied, the injection of charges to the capacitor CINT occurs. However, since the microswitch S1 is connected to the counter electrode (VCOM), the charges of the capacitor CINT transfer to the counter electrode (VCOM) side via the thin-film transistor M4 and the microswitch S1. As a result, the potential VINT of the gate of the thin-film transistor M2 becomes substantially equal to the potential (0 V) of the counter electrode (VCOM).
In this case, the thin-film transistor M2 becomes non-conductive, since the potential VINT of the gate of the thin-film transistor M2 becomes substantially equal to the potential of the line RST. Therefore, the touched state can be detected based on the absence of any sensor output from the thin-film transistor M2 during the sensing period.
In (b) of
As described above, in the present embodiment, even when the readout signal is applied from the line RWS, charges injected into the capacitor CINT transfer to the counter electrode (VCOM) side via the microswitch S1 in the ON state, and therefore the potential of VINT does not rise even during the readout period. Consequently, a floating state of charges that would cause the sensor output to be kept in an ON state can be avoided, and therefore, an output of the sensor circuit at each pixel can be obtained accurately.
In order to cause only the photodiode D1 to function, the following setting is provided as shown in (a) of
When the readout signal is supplied, the injection of charges into the capacitor CINT occurs. The potential VINT of the gate of the thin-film transistor M2 in this state is expressed by the above-described formula (3). As is the case with the “hybrid mode” described above, the potential VINT of the gate of the thin-film transistor M2 is made higher than the threshold voltage of the thin-film transistor M2 by ΔVRWS, which makes the thin-film transistor M2 conductive. Thus, the thin-film transistor M2, together with the thin-film transistor M3 provided at an end of the line OUT in each column, functions as a source follower amplifier.
In (b) of
Like when the microswitch S1 is in the OFF state in the “hybrid mode” described above, the sensor output voltage VPIX from the thin-film transistor M2 is proportional to an integral of the photoelectric current of the photodiode D1 during the integration period.
In order to cause only the microswitch S1 to function, a forward voltage of the photodiode D1 is prevented from being generated. In the present embodiment, since a DC power source output is not used as the reset signal, the readout signal is supplied immediately after the reset signal is supplied, so that a forward voltage of the photodiode D1 should not be generated. Thus, the timing at which a forward voltage of the photodiode D1 is not generated is utilized as the readout period, whereby the photodiode D1 is made ineffective.
The following setting is provided as shown in (a) of
When the microswitch S1 is in the OFF state (in the non-touched state), the potential VINT of the gate of the thin-film transistor M2 becomes higher than the threshold voltage of the thin-film transistor M2, like when the microswitch S1 is in the OFF state in the above-described “hybrid mode”. This causes the thin-film transistor M2 to become conductive, and the thin-film transistor M2, together with the thin-film transistor M3 provided at an end of the line OUT in each column, functions as a source follower amplifier.
When the microswitch S1 is in the ON state (in the touched state), the injection of charges into the capacitor CINT occurs upon the supply of the readout signal, like when the microswitch S1 is in the ON state in the above-described “hybrid mode”. However, since the microswitch S1 is connected to the counter electrode (VCOM), the charges of the capacitor CINT transfer to the counter electrode (VCOM) side via the thin-film transistor M4 and the microswitch S1. As a result, the potential VINT of the gate of the thin-film transistor M2 becomes substantially equal to the voltage of the counter electrode (VCOM).
In this case, the thin-film transistor M2 becomes non-conductive, since the potential VINT of the gate of the thin-film transistor M2 is substantially equal to that of the counter electrode (VCOM). Therefore, the touched state can be detected based on the absence of any sensor output from the thin-film transistor M2 during the sensing period.
In (b) of
Hereinafter, Sixth Embodiment is explained. The members having the same functions as those of First Embodiment explained above are denoted by the same reference numerals as those in First Embodiment, and detailed explanations of the same are omitted.
As shown in
The sensor circuit according to the present embodiment, which uses not the counter electrode (VCOM) but the reference voltage line VB, has an advantage that it is unnecessary to consider the timing of polarity inversion at the counter electrode. Therefore, when the sensor circuit according to the present embodiment is used, the degree of freedom in circuit designing can be improved.
Hereinafter, Seventh Embodiment is explained. The members having the same functions as those of First Embodiment explained above are denoted by the same reference numerals as those in First Embodiment, and detailed explanations of the same are omitted.
As shown in
The microswitch S1, upon a touching operation, electrically connects the thin-film transistor M4 and the line RWS with each other. In the present embodiment, the microswitch S1 and the control electrode of the thin-film transistor M4 are connected to the line RST, whereby the number of lines can be decreased as compared with the configuration of First Embodiment. This simplifies the sensor circuit, and increases an aperture ratio.
An exemplary case where the sensor circuit according to the present embodiment is caused to operate in the hybrid mode is shown in
The sensor circuit according to the present embodiment is capable of reading out an amplified variation of a potential of the accumulation node during the integration period TINT, as shown in (b) of
First, when the high-level reset signal VEST. H is supplied to the line RST, the photodiode D1 is forward-biased, and therefore, the potential VINT of the gate of the thin-film transistor M2 is expressed by a formula identical to the above-described formula (1). Here, since VINT is lower than the threshold voltage of the thin-film transistor M2, the thin-film transistor M2 is non-conductive during a period while the high-level reset signal VRST. H is being supplied.
Next, the reset signal returns to the low level VRST. L (at the timing of t=TRST in (b) of
Here, the potential VINT of the gate of the thin-film transistor M2 at the end of the integration period is determined by the above-described formula (2). During the integration period also, VINT is lower than the threshold voltage of the thin-film transistor M2, and the thin-film transistor M2 is therefore non-conductive.
After the integration period ends, at the timing t=TRWS shown in (b) of
Here, a case where the microswitch S1 is in an OFF state (in a non-touched state) is explained. When the readout signal is supplied, the injection of charges into the capacitor CINT occurs. Here, a voltage is supplied to the control electrode of the thin-film transistor M4 by the readout signal, but since the microswitch S1 is in the OFF state, the operation of the thin-film transistor M4 does not assume influence on the potential of VINT. The potential VINT of the gate of the thin-film transistor M2 in this state is expressed by the above-described formula (3). Thus, the potential VINT of the gate of the thin-film transistor M2 becomes higher than the threshold voltage of the thin-film transistor M2, and this causes the thin-film transistor M2 to become conductive. Therefore, the thin-film transistor M2, together with the thin-film transistor M3 provided at an end of the line OUT in each column, functions as a source-follower amplifier. In other words, the sensor output voltage VPIX from the thin-film transistor M2 is proportional to an integral of the photoelectric current of the photodiode D1 during the integration period.
On the other hand, a case where the microswitch S1 is in an ON state (in a touched state) is explained below. When the readout signal is supplied, since the microswitch S1 is connected to the line RWS, the potential VINT of the gate of the thin-film transistor M2 is boosted up via the microswitch S1 and the thin-film transistor M4. Therefore, the potential VINT of the gate of the thin-film transistor M2 has a value obtained by subtracting the threshold voltage of the thin-film transistor M4 from the high level VRWS. H of the readout signal.
In this case, the potential VINT of the gate of the thin-film transistor M2 is higher than the threshold voltage of the thin-film transistor M2, and the thin-film transistor M2 therefore becomes conductive. As a result, the thin-film transistor M2, together with the thin-film transistor M3 provided at an end of the line OUT in each column, functions as a source-follower amplifier. In other words, the sensor output voltage VPIX from the thin-film transistor M2 coincides with a value obtained by subtracting the threshold voltage of the thin-film transistor M4 from a supplied voltage of the readout signal.
In (b) of
As described above, in the present embodiment, when the readout signal is applied from the line RWS, the potential of VINT is caused to rise via the microswitch S1 in the ON state. After the readout period, the readout signal returns to the low level VRWS. L, and charges flow from VINT into the capacitor CINT. Consequently, a floating state of charges that would cause the sensor output to be kept in an ON state can be avoided, and therefore, an output of the sensor circuit at each pixel can be obtained accurately.
As shown in (b) of
In order to cause only the photodiode D1 to function, the following setting is provided as shown in (a) of
When the readout signal is supplied, the injection of charges into the capacitor CINT occurs. The potential VINT of the gate of the thin-film transistor M2 in this state is expressed by the above-described formula (3). As is the case with the “hybrid mode” described above, the potential VINT of the gate of the thin-film transistor M2 is made higher than the threshold voltage thereof by ΔVRWS, which makes the thin-film transistor M2 conductive. Thus, the thin-film transistor M2, together with the thin-film transistor M3 provided at an end of the line OUT in each column, functions as a source follower amplifier.
In (b) of
Like when the microswitch S1 is in the OFF state in the “hybrid mode” described above, the sensor output voltage VPIX from the thin-film transistor M2 is proportional to an integral of the photoelectric current of the photodiode D1 during the integration period.
In order to cause only the microswitch S1 to function, a forward voltage of the photodiode D1 is prevented from being generated. The following setting is provided as shown in (a) of
When the microswitch S1 is in the OFF state (in the non-touched state), the potential VINT of the gate of the thin-film transistor M2 becomes higher than the threshold voltage of the thin-film transistor M2, like when the microswitch S1 is in the OFF state in the above-described “hybrid mode”. This causes the thin-film transistor M2 to become conductive, and the thin-film transistor M2, together with the thin-film transistor M3 provided at an end of the line OUT in each column, functions as a source follower amplifier.
When the microswitch S1 is in the ON state (in the touched state), the potential VINT of the gate of the thin-film transistor M2 is boosted up upon the supply of the readout signal, like when the microswitch S1 is in the ON state in the “hybrid mode” described above. More specifically, since the microswitch S1 is connected to the line RWS, the potential VINT of the gate of the thin-film transistor M2 is boosted up via the microswitch S1 and the thin-film transistor M4. Therefore, the potential VINT of the gate of the thin-film transistor M2 has a value obtained by subtracting the threshold voltage of the thin-film transistor M4 from the high level VRWS. H of the readout signal.
In this case, the potential VINT of the gate of the thin-film transistor M2 is higher than the threshold voltage of the thin-film transistor M2, and therefore the thin-film transistor M2 becomes conductive. Therefore, the thin-film transistor M2, together with the thin-film transistor M3 provided at an end of the line OUT in each column, functions as a source follower amplifier. In other words, the sensor output voltage VPIX from the thin-film transistor M2 coincides with a value obtained by subtracting the threshold voltage of the thin-film transistor M4 from a supplied voltage of the readout signal.
As shown in (b) of
Hereinafter, Eighth Embodiment is explained. The members having the same functions as those of First Embodiment explained above are denoted by the same reference numerals as those in First Embodiment, and detailed explanations of the same are omitted.
As shown in
The microswitch S1, upon a touching operation, electrically connects the thin-film transistor M4 and the line RWS with each other. In the present embodiment, the microswitch S1 and the control electrode of the thin-film transistor M4 are connected to the line RST, whereby the number of lines can be decreased as compared with the configuration of First Embodiment. This simplifies the sensor circuit, and increases an aperture ratio.
An exemplary case where the sensor circuit according to the present embodiment is caused to operate in the hybrid mode is shown in
The sensor circuit according to the present embodiment is capable of reading out an amplified variation of a potential of the accumulation node during the integration period TINT, as shown in (b) of
Here, a case where the microswitch S1 is in an OFF state (in a non-touched state) is explained. First, when the reset signal VRST. H is supplied to the line RST, a voltage is applied to the control electrode of the thin-film transistor M4. However, when the microswitch S1 is in the OFF state, the thin-film transistor M4 does not become conductive. Therefore, the potential VINT of the gate of the thin-film transistor M2 becomes substantially equal to the high level (0 V) of the reset signal.
Here, since the photodiode D1 is forward-biased, the potential VINT of the gate of the thin-film transistor M2 is expressed by a formula identical to the above-described formula (1). Since VINT in this state is lower than the threshold voltage of the thin-film transistor M2, the thin-film transistor M2 is non-conductive during a period while the high-level reset signal VRST. H is being supplied.
Next, the reset signal returns to the low level VRST. L (at the timing of t=TRST in (b) of
Here, the potential VINT of the gate of the thin-film transistor M2 at the end of the integration period is determined by the above-described formula (2). During the integration period also, VINT is lower than the threshold voltage of the thin-film transistor M2, and the thin-film transistor M2 therefore remains non-conductive.
After the integration period ends, the readout signal rises at the timing t=TRWS shown in (b) of
On the other hand, a case where the microswitch S1 is in an ON state (in a touched state) is explained below. First, when the reset signal VRST. H is supplied to the line RST, a voltage is applied to the control electrode of the thin-film transistor M4. Here, in the case where the microswitch S1 is in the ON state, the thin-film transistor M4 becomes conductive, and the potential VINT of the gate of the thin-film transistor M2 becomes substantially equal to the low level (−7 V) of the readout signal. More specifically, since the reset signal is supplied to the photodiode D1, too, the potential VINT is determined by a resistance ratio between the photodiode D1 and the thin-film transistor M4. In (b) of
Here, the microswitch S1 is connected to the line RWS, but the thin-film transistor M4 is non-conductive. Therefore, even when the readout signal is supplied, the potential VINT of the gate of the thin-film transistor M2 is not influenced by the same. Therefore, the potential VINT of the gate of the thin-film transistor M2 is boosted according to the high level VRWS. H of the readout signal. This causes the potential VINT of the gate of the thin-film transistor M2 to become higher than the threshold voltage of the thin-film transistor M2, whereby the thin-film transistor M2 becomes conductive. Therefore, the thin-film transistor M2, together with the thin-film transistor M3 provided at an end of the line OUT in each column, functions as a source-follower amplifier.
In (b) of
As described above, in the present embodiment, upon the application of the reset signal from the line RST to the sensor circuit, the potential VINT is caused to fall via the microswitch S1 in the ON state. Then, the potential of VINT is boosted up by the readout signal, whereby the sensor output assumes an ON state. After the readout period, the readout signal returns to the low level VRWS. L. Therefore, the output of the sensor circuit at each pixel can be obtained accurately, by avoiding influence of the microswitch S1 that would cause the sensor output to be kept in an ON state.
As shown in (b) of
In order to cause only the photodiode D1 to function, the following setting is provided as shown in (a) of
When the readout signal is supplied, the injection of charges into the capacitor CINT occurs. The potential VINT of the gate of the thin-film transistor M2 in this state is expressed by the above-described formula (3). As is the case with the “hybrid mode” described above, the potential VINT of the gate of the thin-film transistor M2 is made higher than the threshold voltage of the thin-film transistor M2 by ΔVRWS, which makes the thin-film transistor M2 conductive. Thus, the thin-film transistor M2, together with the thin-film transistor M3 provided at an end of the line OUT in each column, functions as a source follower amplifier.
In (b) of
Like when the microswitch S1 is in the OFF state in the “hybrid mode” described above, the sensor output voltage VPIX from the thin-film transistor M2 is proportional to an integral of the photoelectric current of the photodiode D1 during the integration period.
In order to cause only the microswitch S1 to function, a forward voltage of the photodiode D1 is prevented from being generated. The following setting is provided as shown in (a) of
When the microswitch S1 is in the OFF state (in the non-touched state), the potential VINT of the gate of the thin-film transistor M2 becomes higher than the threshold voltage thereof during the readout period, like when the microswitch S1 is in the OFF state in the above-described “hybrid mode”. This causes the thin-film transistor M2 to become conductive, and the thin-film transistor M2, together with the thin-film transistor M3 provided at an end of the line OUT in each column, functions as a source follower amplifier.
When the microswitch S1 is in the ON state (in the touched state), upon the supply of the reset signal, the thin-film transistor M4 becomes conductive, like when the microswitch S1 is in the ON state in the above-described “hybrid mode”. This allows the potential VINT of the gate of the thin-film transistor M2 to fall to the low-level voltage of the line RWS. During the readout period, the potential of VINT is boosted up by the high-level voltage of the line RWS, and therefore, the thin-film transistor M2 becomes conductive. This causes the thin-film transistor M2, together with the thin-film transistor M3 provided at an end of the line OUT in each column, to function as a source-follower amplifier.
As shown in (b) of
So far First to Eighth Embodiments have been explained. The present invention, however, is not limited to the above-described embodiments, but may be modified variously within the scope of the invention.
For example, in the foregoing descriptions of First to Eighth Embodiments, the exemplary configuration is shown in which the lines VDD and the lines OUT connected to the sensor circuits are utilized also as the source lines COL. This configuration has an advantage that a high pixel aperture ratio is provided. However, with a configuration in which the lines VDD and the lines OUT for the optical sensors are provided separately from the source lines COL, the same effect can be achieved as the effect of the above-described First to Eighth Embodiments can be achieved.
The present invention is industrially applicable as a display apparatus having sensor circuits in a pixel region of an active matrix substrate.
Number | Date | Country | Kind |
---|---|---|---|
2009-155505 | Jun 2009 | JP | national |
This application is the national stage under 35 USC 371 of International Application No. PCT/JP2010/060678, filed Jun. 23, 2010, which claims the priority of Japanese Patent Application No. 2009-155505, filed Jun. 30, 2009, the entire contents of which are incorporated herein by reference.
Filing Document | Filing Date | Country | Kind | 371c Date |
---|---|---|---|---|
PCT/JP2010/060678 | 6/23/2010 | WO | 00 | 12/29/2011 |