1. Field of the Invention
The present invention relates to a sensor, and more particularly, it relates to a sensor having a support supporting an electrode plate.
2. Description of the Background Art
A sensor such as a sonic sensor converting a sound to an electric signal by change in the electrostatic capacitance between a sonically vibrating diaphragm and an electrode plate is known in general, as disclosed in National Patent Publication Gazette No. 2004-506394, for example.
The aforementioned National Patent Publication Gazette No. 2004-506394 discloses a sonic sensor comprising a vibrative diaphragm, an electrode plate and a support supporting the electrode plate. When this sonic sensor receives a sound, the diaphragm so vibrates as to change the electrostatic capacitance between the diaphragm and the electrode plate, subjected to application of a constant voltage. Charges move from the diaphragm and the electrode plate due to this change in the electrostatic capacitance, so that the sonic sensor outputs the change of the charges as an electric signal with respect to the sound. In this sonic sensor according to National Patent Publication Gazette No. 2004-506394, the support supports only the upper surface of the electrode plate.
In the sonic sensor according to the aforementioned National Patent Publication Gazette No. 2004-506394, however, the support supports only the upper surface of the electrode plate, leading to such a disadvantage that the electrode plate easily vibrates. When the electrode plate vibrates in the same direction as the diaphragm, therefore, change in the distance between the electrode plate and the diaphragm is reduced to reduce the change in the electrostatic capacitance between the electrode plate and the diaphragm. In this case, the quantity of charges moving from the electrode and the diaphragm is reduced to disadvantageously reduce the electric signal output from the sonic sensor.
The present invention has been proposed in order to solve the aforementioned problem, and an object of the present invention is to provide a sensor capable of increasing an electric signal output therefrom by inhibiting an electrode plate from vibration.
A sensor according to a first aspect of the present invention comprises a diaphragm provided in a vibrative manner, an electrode plate, opposed to the diaphragm at a prescribed distance, having a hole and a support made of a material having an elastic modulus higher than the elastic modulus of a material constituting the electrode plate for supporting the electrode plate, and the support is so formed as to cover at least two of the upper surface and the lower surface of the electrode plate and the side surface of the hole. The lower surface of the electrode plate is closer to the diaphragm, while the upper surface of the electrode plate is farther from the diaphragm.
In the sensor according to the first aspect of the present invention, the support having the higher elastic modulus is so formed as to cover at least two of the upper surface and the lower surface of the electrode plate and the side surface of the hole so that bearing strength of the support for the electrode plate can be further improved as compared with a case of forming the support to cover only the upper or lower surface of the electrode plate, thereby inhibiting the electrode plate from vibration. Thus, only the diaphragm can remarkably vibrate when the sensor receives a sound or the like, so that change in the electrostatic capacitance between the diaphragm and the electrode plate can be increased. Consequently, the change in the electrostatic capacitance between the diaphragm and the electrode plate can be so increased as to increase an electric signal output from the sensor. When the support having the higher elastic modulus supports both of the upper and lower surfaces of the electrode plate maximumly expanded or contracted to receive maximum tensile stress and maximum compressive stress upon vibration of the electrode plate and the support, bearing strength of the support for the electrode plate can be improved also when the total thickness of parts of the support formed on the upper and lower surfaces of the electrode plate respectively is identical to the thickness of a support formed only on the upper or lower surface of the electrode plate. Thus, the bearing strength for the electrode plate can be improved without increasing the thickness of the support dissimilarly to a case of supporting only the upper or lower surface of the electrode plate with the support, thereby preventing the support from cracking resulting from an increased thickness thereof.
In the aforementioned sensor according to the first aspect, the support is preferably so formed as to cover the upper surface and the lower surface of the electrode plate. Thus, the support having the higher elastic modulus supports both of the upper and lower surfaces maximumly expanded or contracted to receive maximum tensile stress and maximum compressive stress upon vibration of the electrode plate and the support, thereby effectively inhibiting the electrode plate from vibration.
In the aforementioned sensor having the support covering the upper and lower surfaces of the electrode plate, the ratio of the longitudinal sectional area of the support to the total longitudinal sectional area of the electrode plate and the support in portions of the support covering the upper surface and the lower surface of the electrode plate is preferably at least 10%. According to this structure, the electrode plate can be further inhibited from vibration.
In the aforementioned sensor according to the first aspect, the support is preferably so formed as to cover either the upper surface or the lower surface of the electrode plate and the side surface of the hole. Thus, the support having the higher elastic modulus supports the upper surface (lower surface) of the electrode plate receiving maximum tensile stress or maximum compressive stress while the lower end (upper end) of the support provided on the side surface of the hole partially supports the lower surface (upper surface) of the electrode plate receiving the maximum tensile stress or the maximum compressive stress upon vibration of the electrode plate and the support, thereby inhibiting the electrode plate from vibration.
In this case, the ratio of the longitudinal sectional area of the support to the total longitudinal sectional area of the electrode plate and the support in portions of the support covering either the upper surface or the lower surface of the electrode plate and the side surface of the hole is preferably at least 26%. According to this structure, the electrode plate can be further inhibited from vibration.
In the aforementioned sensor according to the first aspect, the support is preferably so formed as to cover the upper surface and the lower surface of the electrode plate and the side surface of the support. Thus, the support having the higher elastic modulus supports the upper and lower surfaces of the electrode plate receiving the maximum tensile stress and the maximum compressive stress upon vibration of the electrode plate and the support, thereby inhibiting the electrode plate from vibration.
In this case, the ratio of the longitudinal sectional area of the support to the total longitudinal sectional area of the electrode plate and the support in portions of the support covering the upper surface and the lower surface of the electrode plate and the side surface of the support is preferably at least 17%. According to this structure, the electrode plate can be further inhibited from vibration.
In the aforementioned sensor according to the first aspect, the electrode plate preferably consists of silicon, and the support preferably consists of SiN. According to this structure, the support can easily attain the elastic modulus higher than that of the electrode plate.
In the aforementioned sensor according to the first aspect, the support preferably includes an upper support layer covering the upper surface of the electrode plate, and the upper support layer preferably includes a first opening provided in a contact region of the electrode plate for exposing a prescribed portion of the upper surface of the electrode plate. According to this structure, the electrode plate and an external wire can be electrically connected with each other through the first opening despite the upper support layer provided on the electrode plate.
In this case, the sensor preferably further comprises a first pad electrode so formed as to come into contact with the electrode plate through the first opening of the upper support layer. According to this structure, the electrode plate and the external wire can be electrically connected with each other through the first pad electrode provided in the first opening.
In the aforementioned sensor according to the first aspect, the support preferably includes an upper support layer covering the upper surface of the electrode plate and a lower support layer covering the lower surface of the electrode plate or the lower surface of the upper support layer, and the upper support layer and the lower support layer preferably include second openings provided in a contact region of the diaphragm for exposing a prescribed portion of the upper surface of the diaphragm. According to this structure, the diaphragm and the external wire can be electrically connected with each other through the second openings despite the upper and lower support layers provided on the diaphragm.
In this case, the sensor preferably further comprises a second pad electrode so formed as to come into contact with the diaphragm through the second openings of the upper support layer and the lower support layer. According to this structure, the diaphragm and the external wire can be electrically connected with each other through the second pad electrode provided in the second openings.
In the aforementioned sensor according to the first aspect, the support is preferably formed by an insulating film. According to this structure, the diaphragm and the electrode plate can be easily electrically insulated from each other through the support formed by the insulating film.
In the aforementioned sensor having the support formed by the insulating film, the support is preferably formed by the insulating film containing an impurity introduced by ion implantation. According to modification employing ion implantation, the temperature of the insulating film is substantially increased to about 800° C. during implantation of the impurity, so that the insulating film is densified. At this time, the insulating film is densified while bonds therein are cut due to the implanted impurity, so that the insulating film is relieved from stress. After implantation of the impurity, the insulating film develops expansive force when returning from the temperature of about 800° C. to an equilibrium state of the room temperature, to result in compressive stress (stress acting in an expansive direction with respect to an underlayer) applied to the insulating film. Thus, compressive stress (stress acting in an expansive direction with respect to the underlayer) is applied to the insulating film due to ion implantation, to fix the electrode plate in an outwardly pulled state (in the expansive direction with respect to the underlayer). When a pressure is applied to the electrode plate, therefore, the electrode plate is inhibited from vibration (displacement). Consequently, noise added to a pressure signal is reduced as compared with a case of employing an insulating film subjected to no ion implantation, whereby the sensor has low noise to be capable of correctly measuring capacitance change.
In the aforementioned sensor having the support formed by the insulating film, the support formed by the insulating film containing the impurity introduced by ion implantation preferably contains Si, O and C. According to this structure, the impurity is introduced into the insulating film containing Si, O and C, whereby the dielectric constant of the insulating film can be reduced as compared with that of a conventional insulating film such as a silicon oxide film or a silicon nitride film. Thus, a parasitic capacitance (≈dielectric constant of material×area/thickness) resulting from the insulating film fixing the electrode plate can be so reduced as to improve sensitivity (≈bias voltage×electrostatic capacitance change resulting from vibration/electrostatic capacitance) of the sensor. Further, the impurity is so introduced into the insulating film containing Si, O and C as to densify the insulating film by ion implantation and to subsequently further expand the insulating film, thereby causing compressive stress (stress acting in the expansive direction with respect to the underlayer) higher than that in the conventional insulating film. Therefore, the insulating film fixes the electrode plate in the outwardly pulled state (in the expansive direction with respect to the underlayer), thereby further inhibiting the electrode plate from vibration (displacement) when a pressure is applied to the electrode plate. Consequently, noise added to the pressure signal is further reduced as compared with a case of employing the conventional insulating film, whereby the sensor has lower noise to be capable of more correctly measuring capacitance change.
In the aforementioned sensor having the support formed by the insulating film, the insulating film preferably includes a first region containing the impurity and a second region containing no impurity. According to this structure, the insulating film fixing the electrode plate so includes the first region containing the impurity as to fix the electrode plate in the outwardly pulled state, thereby inhibiting the electrode plate from vibration (displacement) resulting from propagation of a sound wave or the like. The insulating film containing the impurity is densified by ion implantation, to exhibit a dielectric constant higher than that before ion implantation. Therefore, the insulating film so includes the second region containing no impurity that the dielectric constant thereof can be reduced as compared with an insulating film constituted of only the first region. Consequently, the parasitic capacitance, resulting from the insulating film fixing the electrode plate, added to the electrostatic capacitance between the diaphragm and the electrode plate can be so reduced as to improve the sensitivity of the sensor.
In the aforementioned sensor having the support formed by the insulating film, the impurity is preferably introduced into the electrode plate through the insulating film. According to this structure, adhesiveness between the electrode plate and the insulating film is improved due to mixing action on the interface between the electrode plate and the insulating film, thereby more strongly fixing the electrode plate in the state pulled by the insulating film. Thus, noise resistance with respect to the pressure signal can be further improved.
In the aforementioned sensor having the support formed by the insulating film containing the impurity introduced by ion implantation, the support formed by the insulating film preferably has stress outwardly pulling the electrode plate. According to this structure, the insulating film fixes the electrode plate in the outwardly pulled state (in the expansive direction with respect to the underlayer), thereby inhibiting the electrode plate from vibration (displacement) when a pressure is applied to the electrode plate. Consequently, noise added to the pressure signal is further reduced as compared with the case of employing the conventional insulating film, whereby the sensor has low noise to be capable of correctly measuring capacitance change.
The aforementioned sensor according to the first aspect may include a sonic sensor.
A sensor according to a second aspect of the present invention comprises a first electrode provided on a semiconductor substrate, a second electrode opposed to the first electrode at a prescribed interval for constituting a capacitor with the first electrode and an insulating film provided on at least the upper surface of the second electrode for fixing the second electrode to the semiconductor substrate. An impurity is introduced into the insulating film by ion implantation. According to modification employing ion implantation, the temperature of the insulating film is substantially increased to about 800° C. during implantation of the impurity, so that the insulating film is densified. At this time, the insulating film is densified while bonds therein are cut due to the implanted impurity, so that the insulating film is relieved from stress. After implantation of the impurity, the insulating film develops expansive force when returning from the temperature of about 800° C. to an equilibrium state of the room temperature, to result in compressive stress (stress acting in an expansive direction with respect to an underlayer) applied to the insulating film. Thus, compressive stress (stress acting in the expansive direction with respect to the underlayer) is applied to the insulating film due to ion implantation, to fix the electrode plate in an outwardly pulled state (in the expansive direction with respect to the underlayer). When a pressure is applied to the second electrode, therefore, the second electrode is inhibited from vibration (displacement). Consequently, noise added to a pressure signal is reduced as compared with a case of employing an insulating film subjected to no ion implantation, whereby the sensor has low noise to be capable of correctly measuring capacitance change.
The foregoing and other objects, features, aspects and advantages of the present invention will become more apparent from the following detailed description of the present invention when taken in conjunction with the accompanying drawings.
FIGS. 7 to 13 are sectional views taken along the line 200-200 in
FIGS. 16 to 30 are sectional views for illustrating a process of manufacturing the microphone according to the first embodiment of the present invention;
FIGS. 32 to 36 are sectional views for illustrating a process of manufacturing the microphone according to the second embodiment of the present invention;
FIGS. 40 to 51 are sectional views for illustrating a process of manufacturing the sonic sensor according to the third embodiment of the present invention;
Embodiments of the present invention are now described. In the following description, each embodiment of the present invention is applied to a microphone (sonic sensor) employed as an exemplary sensor.
The structure of a microphone 30 according to a first embodiment of the present invention is described with reference to FIGS. 1 to 4.
In the microphone 30 according to the first embodiment, an etching stopper layer 2 of SiN is formed on the surface of a silicon substrate 1, as shown in
A polysilicon layer 4 having a thickness of about 0.1 μm to about 2.0 μm is formed on the upper surfaces of the etching stopper layer 2 and the opening 3. This polysilicon layer 4 is doped with an n-type impurity (phosphorus (P)), to be conductive. As shown in
According to the first embodiment, a lower support layer 5 is formed on the upper surfaces of the etching stopper layer 2 and the polysilicon layer 4. The lower support layer 5, consisting of SiN having an elastic modulus higher than that of polysilicon, has a thickness of about 0.01 μm to about 2 μm. The lower support layer 5 is an example of the “support” in the present invention. An air gap 6 having a height of about 1 μm to about 5 μm is formed between the diaphragm portion 4a and the lower support layer 5.
Another polysilicon layer 7 having a thickness of about 0.1 μm to about 2 μm is formed on the upper surface of the lower support layer 5. This polysilicon layer 7 is doped with an n-type impurity (phosphorus (P)), to be conductive. As shown in
According to the first embodiment, an upper support layer 8 is formed on the upper surfaces of the lower support layer 5 and the polysilicon layer 7. The upper support layer 8, consisting of SiN having the elastic modulus higher than that of polysilicon, has a thickness of about 0.1 μm to about 2 μm. In other words, the lower and upper support layers 5 and 8 of SiN having the elastic modulus higher than that of polysilicon are formed on the lower and upper surfaces of the electrode plate portion 7a consisting of the polysilicon layer 7 respectively according to the first embodiment.
A plurality of circular sonic holes 9 externally communicating with the air gap 6 are formed in the electrode plate portion 7a of the polysilicon layer 7 and the lower and upper support layers 5 and 8.
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Operations of the microphone 30 according to the first embodiment are now described with reference to
When the microphone 30 receives no sound, the diaphragm portion 4a remains unvibrational as shown in
When the microphone 30 receives a sound, on the other hand, the diaphragm portion 4a vibrates as shown in
According to the first embodiment, as hereinabove described, the lower and upper support layers 5 and 8 of SiN having the elastic modulus higher than that of polysilicon forming the electrode plate portion 7a are formed on the lower and upper surfaces of the electrode plate portion 7a subjected to the maximum tensile stress and the maximum compressive stress upon vibration of the electrode plate portion 7a and the lower and upper support layers 5 and 8 respectively so that bearing strength of the lower and upper support layers 5 and 8 for the electrode plate portion 7a can be further improved as compared with a case of providing a support to cover only the upper or lower surface of an electrode plate, thereby inhibiting the electrode plate portion 7a from vibration. When the microphone 30 receives a sound, therefore, only the diaphragm portion 4a can remarkably vibrate for increasing change in the distance between the diaphragm portion 4a and the electrode plate portion 7a. Consequently, change in the electrostatic capacitance between the diaphragm portion 4a and the electrode plate portion 7a can be so increased as to increase the electric signal output from the microphone 30.
The lower and upper support layers 5 and 8 of SiN having the higher elastic modulus support both of the lower and upper surfaces of the electrode plate portion 7a maximumly expanding or contracting to be subjected to the maximum tensile stress and the maximum compressive stress upon vibration of the electrode plate portion 7a and the lower and upper support layers 5 and 8, whereby the bearing strength of the lower and upper support layers 5 and 8 for the electrode plate portion 7a can be improved also when the total thickness of the lower and upper support layers 5 and 8 formed on the lower and upper surfaces of the electrode plate portion 7a respectively is identical to the thickness of a support formed only on the lower or upper surface of the electrode plate portion 7a. Thus, the bearing strength for the electrode plate portion 7a can be improved without increasing the thicknesses of the lower and upper support layers 5 and 8 dissimilarly to a case of supporting only either the upper surface or the lower surface of an electrode plate with a support, thereby preventing the lower and upper support layers 5 and 8 from cracking resulting from increased thicknesses thereof.
Two simulations performed for confirming effects of the aforementioned first embodiment are now described. In each of the following simulations, a pressure of 10 Pa was downwardly applied onto the upper surface of each of flat plates 31a to 31g shown in
The longitudinal sectional structures of the flat plates 31a to 31g are described with reference to FIGS. 7 to 13. The flat plate 31a shown in
The displacements y in the flat plate 31a (see
The displacements y in the flat plate 31a (see
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The displacements y in the flat plate 31a (see
When second ends of each electrode plate and each support are vertically displaced, upper and lower surfaces of sections thereof most expand or contract in the longitudinal direction L, so that the maximum tensile stress or the maximum compressive stress acts on the upper and lower surfaces of the sections. However, the lengths of central portions of the sections remain substantially unchanged in the longitudinal direction L upon the vertical displacement of the second ends of the electrode plate and the support, so that tensile stress and compressive stress hardly act on the central portions of the sections. The supports 33d and 33e are formed on the upper and lower surfaces of the electrode plates 32d and 32e respectively in the flat plates 31d and 31e according to Examples 1 and 2 shown in
The displacements y in the flat plate 31a (see
It is also understood that the difference between the displacements y in the flat plates 31a and 31b according to comparative examples 1a and 2a shown in
A process of manufacturing the microphone 30 according to the first embodiment of the present invention is now described with reference to
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In the microphone 30a according to the second embodiment, the holes 47b larger than the sonic holes 49 are formed in the electrode plate portion 47a of a polysilicon layer 47 on positions corresponding to the sonic holes 49, as shown in
The microphone 30a according to the second embodiment is identical in structure to the microphone 30 according to the aforementioned first embodiment, except the lower support layer 45, the polysilicon layer 47 and the upper support layer 48.
According to the second embodiment, as hereinabove described, the lower and upper support layers 45 and 48 of SiN having the elastic modulus higher than that of polysilicon forming the electrode plate portion 47a are formed on the lower and upper surfaces of the electrode plate 47a subjected to the maximum tensile stress and the maximum compressive stress upon vibration of the electrode plate portion 47a and the lower and upper support layers 45 and 48 and the side surfaces of the holes 47b of the electrode plate portion 47a corresponding to the sonic holes 49 so that bearing strength of the lower and upper support layers 45 and 48 for the electrode plate portion 47a can be improved as compared with a case of providing a support so formed as to cover only the upper or lower surface of an electrode plate, thereby inhibiting the electrode plate portion 47a from vibration. This point has already been confirmed in the simulation shown in
A process of manufacturing the microphone 30a according to the second embodiment of the present invention is now described with reference to
First, a configuration similar to that shown in
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Then, the resist films 52 are employed as masks for etching the upper and lower support layers 48 and 45 with a gas mixture of argon, oxygen and CF4. Thus, a configuration including the sonic holes 49 and contact holes 45a and 48a is formed as shown in
Then, the microphone 30a according to the second embodiment shown in
A sonic sensor 300 according to a third embodiment of the present invention is described with reference to FIGS. 37 to 39. According to the third embodiment, modified SiOC layers 308a formed by ion implantation are employed as supports supporting electrode plates (fixed electrodes), dissimilarly to the aforementioned first and second embodiments.
As shown in FIGS. 37 to 39, the sonic sensor 300 according to the third embodiment comprises a vibrating electrode 304 constituting a diaphragm formed on a silicon substrate 301 and fixed electrodes 306 opposed to the vibrating electrode 304 and arranged at prescribed intervals. The vibrating electrode 304 and the fixed electrodes 306 constitute capacitors.
The sonic sensor 300 includes the silicon substrate 301, an etching stopper layer 302a, the vibrating electrode 304, a sacrifice layer 305, the fixed electrodes 306, sonic holes 307a, the modified SiOC layers 308a, a pad electrode 309a for the vibrating electrode 304, another pad electrode 309b for the fixed electrodes 306, a substrate opening 310a and an air gap 311.
The silicon substrate 301 is an example of the “semiconductor substrate” in the present invention, and the vibrating electrode 304 is an example of the “first electrode” or the “diaphragm” in the present invention. The fixed electrodes 306 are examples of the “second electrode” or the “electrode plate” in the present invention, and the modified SiOC layers 308a are examples of the “insulating film”, the “insulating film, containing the impurity, containing Si, O and C” or the “support” in the present invention.
The silicon substrate 301 serves as the substrate of the sonic sensor 300. This silicon substrate 301 is provided with a sound hole (opening) 310 passing through the silicon substrate 301 from above, as shown in FIGS. 38 and 39. The substrate opening 310a of the sound hole 310 has a square shape in plan view on the upper surface of the silicon substrate 301, as shown in
The vibrating electrode 304 is so formed as to cover the sound hole 310 of the silicon substrate 301, as shown in
As shown in
The modified SiOC layers 308a, so formed as to cover the fixed electrodes 306 as shown in
The sacrifice layer 305 is so formed as to insulate the vibrating electrode 304 and the fixed electrodes 306 from each other, as shown in
The pad electrodes 309a and 309b for the vibrating electrode 304 and the fixed electrodes 306 are connected to the vibrating electrode 304 and the fixed electrodes 306 respectively. These pad electrodes 309a and 309b are provided for applying prescribed voltages to the vibrating electrode 304 and the fixed electrodes 306 respectively. When the electrostatic capacitances of the capacitors formed by the vibrating electrode 304 and the fixed electrodes 306 change, the potential difference between the pad electrodes 309a and 309b for the vibrating electrode 304 and the fixed electrodes 306 also changes so that the sonic sensor 300 outputs the changing potential difference as a sound signal. In other words, the pad electrodes 309a and 309b for the vibrating electrode 304 and the fixed electrodes 306 indirectly detect the change in the electrostatic capacitances of the capacitors. The sonic sensor 300 outputs the sound signal through a speaker, or coverts the same to a digital signal and stores the digital signal, for example.
Table 2 shows the film characteristics (residual stress, BHS etching rate and dielectric constant) of the modified SiOC layers 308a. The residual stress (internal stress) includes stress (tensile stress) acting in a contractive direction with respect to an underlayer and stress (compressive stress) acting in an expansive direction with respect to the underlayer. Referring to Table 2, plus values show compressive stress while a minus value shows tensile stress.
The insulating films fixing the fixed electrodes 306 have compressive stress to pull the fixed electrodes 306 toward the outer peripheries (expansive direction with respect to underlayers). Therefore, the insulating films can strongly pull the fixed electrodes 306 as the compressive stress is increased.
As clearly understood from Table 2, a modified SiOC layer has compressive stress reverse to tensile stress of an unmodified SiOC layer, and this compressive stress is approximately twice as much as that of a silicon nitride film (SiN) or a silicon oxide film (SiO2). This is because the modified SiOC layer (prepared by ion-implanting an impurity into an SiOC layer) causes compressive stress (stress acting in an expansive direction with respect to an underlayer) due to film densification through ion implantation and subsequent expansion.
According to the first embodiment, the modified SiOC layers 308a having high compressive stress fix the fixed electrodes 306 in an outwardly pulled state (in an expansive direction with respect to underlayers). When subjected to a sound pressure, therefore, the fixed electrodes 306 are inhibited from vibration (displacement). Consequently, noise applied to a sonic signal is reduced as compared with a case of employing SiOC layers containing no impurity, whereby the sonic sensor 300 can correctly measure capacitance change with low noise.
A method of manufacturing the sonic sensor 300 according to the third embodiment of the present invention is now described with reference to FIGS. 40 to 51. FIGS. 40 to 51 are sectional views taken along the line 400-400 in
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During the ion implantation of the impurity, the temperature of the SiOC layer 308 is substantially increased to about 800° C., so that the SiOC layer 308 is densified. At this time, the SiOC layer 308 is densified while bonds therein are cut due to the implanted impurity, so that the SiOC layer 308 is relieved from stress. When returning from the temperature of about 800° C. to an equilibrium state of the room temperature after the ion implantation, the SiOC layer 308 develops expansive force to result in compressive stress (stress acting in an expansive direction with respect to the underlayer) as film stress, thereby forming the modified SiOC layers 308a having high compressive stress.
Boron ions are introduced into the SiOC layer 308 by ion implantation for improving adhesiveness between the fixed electrodes 306 and the modified SiOC layers 308a due to mixing action on the interfaces therebetween, so that the modified SiOC layers 308a fix the fixed electrodes 306 in a strongly pulled state. Thus, noise resistance with respect to the sonic signal is further improved.
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In the sonic sensor 300a according to the fourth embodiment, the multilayer films can be easily formed by exercising control for reducing a modification depth by reducing energy for implanting an impurity into an SiOC layer 308 in a step similar to that of the third embodiment shown in
The modified SiOC layers 308b are examples of the “first region” in the present invention, and the SiOC layers 308c are examples of the “second region” in the present invention.
As understood from Table 2, an unmodified SiOC layer exhibiting tensile stress as residual stress cannot fix the fixed electrodes 306 in a pulled state, while the same exhibits a dielectric constant of 3.0 lower than that of a silicon oxide film (dielectric constant: 4.2) or a silicon nitride film (dielectric constant: 7). According to the fourth embodiment, the insulating films fixing the fixed electrodes 306 include the modified SiOC layers 308b containing an impurity introduced by ion implantation for fixing the fixed electrodes 306 in an outwardly pulled state, thereby inhibiting the fixed electrodes 306 from vibration (displacement) resulting from propagation of a sound wave or the like. Further, the modified SiOC layers 308b densified by ion implantation exhibit a dielectric constant higher than that before ion implantation, whereby the dielectric constant of the insulating films, including the SiOC layers 308b containing no impurity, fixing the fixed electrodes 306 can be reduced as compared with that of the supports according to the third embodiment constituted of only the modified SiOC layers 308a. Consequently, a parasitic capacitance added to the electrostatic capacitances between a vibrating electrode 304 and the fixed electrodes 306, i.e., the parasitic capacitance (≈dielectric constant of material×area/thickness) resulting from the insulating films (the modified SiOC layers 308b and the SiOC layers 308c) fixing the fixed electrodes 306 can be so reduced as to improve sensitivity (≈bias voltage×electrostatic capacitance change resulting from vibration/electrostatic capacitance) of the sonic sensor 300a.
As understood from Table 2, further, the SiOC layers 308c and the modified SiOC layers 308b exhibit smaller etching rates of BHF (buffered hydrofluoric acid) as compared with a silicon oxide film or a silicon nitride film. Therefore, film loss resulting from HF treatment for removing sacrifice layers 303 and 305 is so suppressed as to attain an effect identical to that obtained by substantially increasing the thickness of the insulating films fixing the fixed electrodes 306. Consequently, the insulating films can fix the fixed electrodes 306 in a more strongly pulled state. Thus, a process margin is increased in a step of removing the sacrifice layers 303 and 305 (see
Although the present invention has been described and illustrated in detail, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of limitation, the spirit and scope of the present invention being limited only by the terms of the appended claims.
For example, while the lower and upper support layers 5 and 8 of SiN are so formed as to cover both of the lower and upper surfaces of the electrode plate portion 7a in the aforementioned first embodiment and the lower and upper support layers 45 and 48 of SiN are so formed as to cover both of the lower and upper surfaces and the side surface of the electrode plate portion 47a in the aforementioned second embodiment, the present invention is not restricted to this but an upper support layer 68 of SiN may alternatively be so formed as to cover the upper surface of an electrode portion 67a of polysilicon and the overall side surfaces of holes 67b of the electrode plate portion 67a corresponding to sonic holes 69 respectively as in a microphone 30b according to the first modification of the present invention shown in
Further alternatively, a lower support layer 75 and a side support layer 78 of SiN may be so formed as to cover the lower surface of an electrode plate portion 77a of polysilicon and the side surfaces of holes 77b of the electrode plate portion 77a corresponding to sonic holes 79, as in a microphone 30c according to the second modification of the present invention shown in
While the aforementioned first and second embodiments and the aforementioned first and second modifications are applied to the microphones 30 and 30a to 30c, the present invention is not restricted to this but may alternatively be applied to another sonic sensor, a pressure sensor or an interdigital electrostatic capacitance detecting sensor such as an acceleration sensor.
While the electrode plate portions 7a, 47a, 67a and 77a are made of polysilicon and the lower support layers 5, 45, 65 and 75 as well as the upper support layers 8, 48, 68 and 78 are made of SiN in the aforementioned first and second embodiments and the aforementioned first and second modifications, the present invention is not restricted to this but the materials for the electrode plate portion 7a, 47a, 67a or 77a and the upper support layer 8, 48, 68 or 78 and the lower support layer 5, 45, 65 or 75 can be properly changed so far as the material constituting the lower support layer 5, 45, 65 or 75 and the upper support layer 8, 48, 68 or 78 has a higher elastic modulus than the material constituting the electrode plate portion 7a, 47a, 67a or 77a. For example, a metallic material such as gold, aluminum or copper may be employed as the material constituting the electrode plate portion 7a, 47a, 67a or 77a, and SiC, SiOC, SiON or SiCN may be employed as the material constituting the lower support layer 5, 45, 65 or 75 and the upper support layer 8, 48, 68 or 78.
While the modified SiOC layers containing the impurities introduced by ion implantation are employed as the supports consisting of the insulating films supporting the fixed electrodes (electrode plates) in the aforementioned third and fourth embodiments, the present invention is not restricted to this but insulating films of a material other than SiOC may alternatively be employed so far as large compressive stress is caused in the films due to an impurity introduced by ion implantation.
While the modified SiOC layers containing ion-implanted boron are employed as the supports of the insulating films supporting the fixed electrodes (electrode plates) in the aforementioned third and fourth embodiments, the present invention is not restricted to this but an impurity other than boron may alternatively be introduced into the insulating films so far as the impurity can cause large compressive stress in the SiOC layers due to ion implantation.
Number | Date | Country | Kind |
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JP2005-252114 | Aug 2005 | JP | national |
JP2005-276303 | Sep 2005 | JP | national |