Claims
- 1. A shadow mask comprising:a support layer; a stopper layer, whose etching rate differs from etching rate of said support layer, formed on said support layer; and a surface layer formed on said stopper layer, wherein said support layer, said stopper layer and said surface layer comprise an opening having: a tapered portion which is formed through said support layer, said stopper layer and said surface layer and is broadened toward said support layer from said 10 surface layer; and a projected portion which is a part of said surface layer projecting toward the center of said tapered portion, wherein a side of said projected portion is broadened toward said support layer from said surface layer, wherein said stopper layer is a part of said support layer; and said stopper layer and said surface layer are bonded together, and wherein said stopper layer and said surface layer are bonded together via a polyimide film.
- 2. A shadow mask comprising:a support layer; a stopper layer, whose etching rate differs from etching rate of said support layer, formed on said support layer; and a surface layer formed on said stopper layer, wherein said support layer, said stopper layer and said surface layer comprise an opening having: a tapered portion which is formed through said support layer, said stopper layer and said surface layer and is broadened toward said support layer from said 10 surface layer; and a projected portion which is a part of said surface layer projecting toward the center of said tapered portion, wherein said support layer maintains a mechanical strength of said shadow mask.
- 3. The shadow mask according to claim 2, wherein a Moh's hardness of said support layer is in a range of 7.0 to 13.0.
- 4. A shadow mask comprising:a support layer; a stopper layer, whose etching rate differs from etching rate of said support layer, formed on said support layer; and a surface layer formed on said stopper layer, wherein said support layer, said stopper layer and said surface layer comprise an opening having: a tapered portion which is formed through said support layer, said stopper layer and said surface layer and is broadened toward said support layer from said 10 surface layer; and a projected portion which is a part of said surface layer projecting toward the center of said tapered portion, wherein etching rate of said stopper layer is smaller than etching rate of said support layer.
- 5. The shadow mask according to claim 4, wherein:said support layer is made of silicon; and said stopper layer is made of silicon dioxide.
- 6. A shadow mask comprising:a support layer; a stopper layer, whose etching rate differs from etching rate of said support layer, formed on said support layer; and a surface layer formed on said stopper layer, wherein said support layer, said stopper layer and said surface layer comprise an opening having: a tapered portion which is formed through said support layer, said stopper layer and said surface layer and is broadened toward said support layer from said 10 surface layer; and a projected portion which is a part of said surface layer projecting toward the center of said tapered portion, wherein: said shadow mask is used for forming a film having a predetermined shape on a substrate; and said surface layer is made of a material having thermal expansion rate which is substantially the same as thermal expansion rate of said substrate.
- 7. The shadow mask according to claim 6, wherein said surface layer is made of a material which is substantially the same as that of said substrate.
- 8. A shadow mask comprising:a support layer; a stopper layer, whose etching rate differs from etching rate of said support layer, formed on said support layer; and a surface layer formed on said stopper layer, wherein said support layer, said stopper layer and said surface layer comprise an opening having: a tapered portion which is formed through said support layer, said stopper layer and said surface layer and is broadened toward said support layer from said 10 surface layer; and a projected portion which is a part of said surface layer projecting toward the center of said tapered portion, said shadow mask being used for vapor-depositing an organic light emission material to a substrate of an organic EL (Electroluminescense) display.
- 9. A shadow mask comprising:a support layer; a stopper layer, whose etching rate differs from etching rate of said support layer, formed on said support layer; and a surface layer formed on said stopper layer, wherein said support layer, said stopper layer and said surface layer comprise an opening having: a tapered portion which is formed through said support layer, said stopper layer and said surface layer and is broadened toward said support layer from said 10 surface layer; and a projected portion which is a part of said surface layer projecting toward the center of said tapered portion, wherein said projected portion has a smooth surface which is formed by sublimation of portions of said surface layer.
- 10. A shadow mask which is for vapor-depositing an organic light emission material to a substrate of an organic EL (Electroluminescense) display, said shadow mask comprising:a support layer which maintains a mechanical strength of said shadow mask; a stopper layer which is formed on said support layer, and has etching rate smaller than etching rate of said support layer; a surface layer which is bonded on said stopper layer by polyimide, wherein: said support layer, said stopper layer and said surface layer comprise a plurality of openings which are formed through said support layer, said stopper layer and said surface layer, and are arranged in matrix form; and each of said plurality of openings is broadened from one surface of said shadow mask toward the other surface thereof.
- 11. The shadow mask according to claim 10, wherein each of said plurality of openings has:a tapered portion which is broadened toward said support layer from said surface layer; and a projected portion which is a part of said surface layer projecting toward the center of said tapered portion.
- 12. The shadow mask according to claim 11, wherein each of said plurality of openings has a diameter which is smaller than an interval between the openings.
- 13. The shadow mask according to claim 10, wherein said support layer prevents said shadow mask from being bent because of temperature variation.
- 14. The shadow mask according to claim 13, wherein a Moh's hardness of said support layer is in a range of 7.0 to 13.0.
- 15. The shadow mask according to claim 10, wherein said surface layer is made of a material having thermal expansion rate which is substantially the same as thermal expansion rate of said substrate.
- 16. The shadow mask according to claim 15, wherein said surface layer is made of a material which is substantially the same as that of said substrate.
- 17. The shadow mask according to claim 10, wherein said projected portion has a smooth surface which is formed by sublimation of portions of said surface layer.
Priority Claims (1)
Number |
Date |
Country |
Kind |
10-301844 |
Oct 1998 |
JP |
|
CROSS-REFERENCE TO RELATED APPLICATIONS
This application is a Continuation Application of application Ser. No. 09/422,191, filed on Oct. 21, 1999 now U.S. Pat. No. 6,459,193. A Divisional Application of application Ser. No. 09/422,191, application Ser. No. 10/141,129, was also filed on May 8, 2002.
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Continuations (1)
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Number |
Date |
Country |
Parent |
09/422191 |
Oct 1999 |
US |
Child |
10/142416 |
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US |