Claims
- 1. A process for producing a Si—SiC material of Si concentration-gradient type by melt-infiltrating Si into a molded material comprising SiC particles, which process comprises preparing at least two kinds of mixtures each comprising SiC particles having a different tap density, laminating the mixtures to form a molded material, keeping the molded material and Si at a temperature of 1,100 to 1,400° C. in an inert gas atmosphere, and then increasing the temperature to 1,500 to 2,500° C. to melt-infiltrate Si into the molded material.
- 2. A process according to claim 1, wherein the molded material and Si are kept at a temperature of 1,100 to 1,400° C. at a pressure of 0.1 to 10 hPa for at least one hour with an inert gas being flown in an amount of 0.1 NL or more per kg of the total of the molded material and Si, and then the temperature is increased to 1,500 to 2,500° C. to melt-infiltrate Si into the molded material.
- 3. A process for producing a SiC fiber-reinforced Si—SiC composite material of Si concentration-gradient type obtained by melt-infiltrating Si into a molded material comprising a SiC fiber and SiC particles, which process comprises preparing at least two kinds of mixtures each comprising SiC particles having a different tap density, mixing a SiC fiber into each mixture, laminating the resulting mixtures to form a molded material, keeping the molded material and Si at a temperature of 1,100 to 1,400° C. in an inert gas atmosphere, and then increasing the temperature to 1,500 to 2,500° C. to melt-infiltrate Si into the molded material.
- 4. A process according to claim 3, wherein the molded material and Si are kept at a temperature of 1,100 to 1,400° C. at a pressure of 0.1 to 10 hPa for at least one hour with an inert gas being flown in an amount of 0.1 NL or more per kg of the total of the molded material and Si, and then the temperature is increased to 1,500 to 2,500° C. to melt-infiltrate Si into the molded material.
Priority Claims (1)
Number |
Date |
Country |
Kind |
9-194132 |
Jul 1997 |
JP |
|
Parent Case Info
This is a Division of application Ser. No. 09/114,260 filed Jul. 13, 1998 now U.S. Pat. No. 6,254,974.
US Referenced Citations (13)
Foreign Referenced Citations (2)
Number |
Date |
Country |
56-114871 |
Sep 1981 |
JP |
9-45467 |
Feb 1997 |
JP |