Claims
- 1. A method of forming a FLASH memory device, said method comprising:
a) providing a semiconductor substrate with a plurality of memory devices and at least one isolation structure, said plurality of memory devices each having a floating gate and a source; b) forming a blanket silicon nitride film over said semiconductor substrate; c) etching said blanket silicon nitride film to form sidewall structures; d) etching a portion of said isolation structure thereby exposing a region of said semiconductor substrate beneath said isolation structure; and e) implanting said region of said semiconductor substrate beneath said isolation structure with a first species.
- 2. The method of claim 1, wherein said isolation structure is shallow trench isolation or LOCOS.
- 3. The method of claim 1, wherein said forming a blanket silicon nitride film comprises LPCVD.
- 4. The method of claim 1, wherein said first species is selected from a group consisting of arsenic and phosphorous.
- 5. A method of forming an integrated circuit memory, said method comprising:
a) providing a semiconductor substrate with a plurality of FLASH memory cells, each FLASH memory cell having a gate structure with a side surface adjacent a source, said FLASH memory cells being adjacent to a plurality of isolation structures; b) forming a blanket silicon nitride film over said semiconductor substrate; c) etching said blanket silicon nitride film to form sidewall structures; d) etching said isolation structures to form a source line by exposing a plurality of regions of said semiconductor substrate beneath said isolation structures; e) implanting said source line with a dopant species;
- 6. The method of claim 5, wherein said isolation structures are formed using shallow trench isolation or LOCOS.
- 7. The method of claim 5, wherein said dopant species is selected from a group consisting of arsenic and phosphorous.
- 8. The method of claim 5 wherein said etching of said silicon nitride film comprises a plasma etch using gases from the group consisting of CHF3 and O2.
CROSS-REFERENCE TO RELATED PATENT/PATENT APPLICATIONS
[0001] The following commonly assigned patent/patent applications are hereby incorporated herein by reference:
1Pat. No./Ser. No.Filing DateTI Case No.60/068,54312/23/97TI-2316760/137,60406/03/99TI-2859560/117,774 1/29/99TI-28594P60/146,212 7/28/99TI-29257P
Provisional Applications (1)
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Number |
Date |
Country |
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60234275 |
Sep 2000 |
US |