Claims
- 1. In a process for anisotropically etching openings in silicon-containing materials with a halogen-containing etch gas, the improvement comprising adding a silicon-containing gas to the etch gas, thereby depositing a protective silicon-containing layer on etched sidewalls of the openings.
- 2. A process according to claim 1 wherein the silicon-containing material is polysilicon.
- 3. A process according to claim 1 wherein the silicon-containing material is a refractory metal silicide.
- 4. A process according to claim 1 wherein the silicon-containing gas is added during an overetch step.
- 5. A process according to claim 1 wherein the silicon-containing gas is added to the etch gas in amounts of up to 50 percent by volume.
Parent Case Info
This is a continuation of application Ser. No. 08/518,937 filed Aug. 24, 1995 now U.S. Pat. No. 5,705,433.
US Referenced Citations (9)
Continuations (1)
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Number |
Date |
Country |
Parent |
518937 |
Aug 1995 |
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