Patent Application
20070221326
The present invention relates to silicon carbide bonding. In one aspect, a method is set out for bonding silicon carbide components to themselves or to components of other selected materials.
Silicon carbide is a material that is finding increased use for space-borne applications, for example in telescope structures and optical benches. This is because of its high strength to weight ratio. Other new applications are now emerging in the semiconductor industry. Most such applications require that pieces of silicon carbide be joined together or mounted on other substrates such as silica or sapphire. A number of ways of joining silicon carbide are described in the article “Silicon Carbide Technology for submillimeter space based telescopes” by F. Safa et al, 48th International Astronautical Congress, Turin, October 1997. These joining methods include bolting; brazing; epoxying, and molecular bonding/optical contacting.
Unfortunately, each of the known techniques for bonding to silicon carbide has disadvantages for precision construction. For example, if bolting is used there is the possibility of dimensional drift and lack of stability. Brazing has to be carried out at high temperature, resulting in the possibility of induced thermal stress and distortion of the system on cooling. Furthermore, precise adjustment during jointing is very difficult. Epoxying results in a system whose dimensions are liable to drift with time and as a result of the vapour pressure of the epoxy may cause pollution of other nearby components particularly if in a high vacuum environment. Molecular bonding tends to be unreliable in terms of bond strength and repeatability and allows no fine adjustment of position before jointing actually occurs. Thus to manufacture, for example, a silicon carbide-based precision optical bench for flight in a satellite environment, no suitable joining method is currently available.
A preferred object of the present invention is to provide an improved method for bonding to silicon carbide.
Accordingly, in a general aspect, the present invention provides bonding for silicon carbide via interaction between a silica layer and hydroxide ions.
In a first preferred aspect, the present invention provides a method for bonding at least two parts, at least one part comprising silicon carbide, the method comprising:
In a second preferred aspect, the present invention provides an assembly of bonded parts obtained or obtainable by the method of the first aspect.
In a third preferred aspect, the present invention provides a device or assembly comprising silicon carbide bonded to another part, for example another silicon carbide part, by an interface material that comprises silica treated with a solution, preferably an aqueous solution, which includes hydroxide ions.
In a fourth preferred aspect, the present invention provides a device or assembly comprising silicon carbide bonded to another part, for example another silicon carbide part, by an interface material that comprises a siloxane network.
Preferred and/or optional features will now be set out. These are applicable singly or in any combination with any of the aspects of the invention, unless the context demands otherwise.
Preferably, the step of forming a layer of silica involves oxidising the silicon carbide surface.
Preferably, the method further includes the step of curing the bond.
The method may further comprise the step of cleaning the bonding surfaces of contaminants. Preferably, the step of cleaning uses at least one of the following: methanol, acetone, opticlear and an ultrasonic bath. A cleaning solution to be used in this step may consist of at least one of the following: piranha solution, sodium hydroxide solution, micro-D-90, cerium oxide, bi-carbonated soda.
Preferably, the bonding solution is an aqueous solution. The bonding solution may comprises a source of hydroxide ions selected from the group: lithium hydroxide, sodium hydroxide, potassium hydroxide, rubidium hydroxide, caesium hydroxide. The bonding solution may comprises an aqueous solution including a silicate material such as sodium silicate.
Preferably, the bonding solution is alkaline.
In the case where the two parts are both silicon carbide, a silica layer is preferably formed on the surface of each of these parts, before the bond is formed.
Utilising the invention, pieces of figured, polished silicon carbide may be joined in a very precise way to each other. To achieve this joining, the pieces should first be oxidised. Subsequently, when cool, the pieces are preferably pushed together with a very small quantity of hydroxide solution between them, creating the join or bond. This joining can also be achieved between the oxidised silicon carbide and a variety of other materials, provided that they too are suitably figured and polished. These materials include silica, sapphire, alumina-based materials, ULE and zerodur. Joining is also possible with aluminium, silicon and zinc, however the process occurs more reliably if these materials are oxidised first in the same manner as silicon carbide. Using this technique, the pieces being bonded may be adjusted in relative position for a short period of time (approximately 30 secs) before bonding takes place. This is advantageous for applications where precision positioning is needed, as minor adjustments can be made. The resulting bond is very strong, very stable, and non-polluting. There is no mechanical or thermal distortion associated with this method as the bonding takes place at room temperature. If desired, curing can be enhanced by gently heating but only to a level where thermal distortion effects are negligible.
Preferred embodiments of the invention are described by way of example and with reference to the accompanying drawings, in which:
The present invention relates to the use of hydroxide-catalysis bonding for joining pieces of silicon carbide. Hydroxide-catalysis bonding typically involves introducing small volumes of a hydroxide solution with/without colloidal SiO2 between pieces of a chemically reactive substrate such that the pieces are bonded together due to the production of chemical chains such as siloxane. The pieces to be jointed should be figured such that the relative figures of the two surfaces differs by no more than λ/4. This technique has been applied to fused silica, sapphire and a number of other substances. Hydroxide-catalysis bonding is the subject of U.S. Pat. No. 6,548,176 and U.S. Pat. No. 6,284,085, the contents of each being incorporated herein by reference in their entirety. This type of bonding has not, however, been used before to bond to silicon carbide.
In order to bond pieces of silicon carbide together, or indeed to other materials, such as silicon or sapphire, it is firstly necessary to treat the surfaces to be chemically reactive to the hydroxide solution, so that siloxane chains can be formed. This can be achieved by forming a silica layer on each silicon carbide surface to be bonded. This silica layer should preferably be formed on a surface that is reasonably well figured. The relative figures of the pieces to be jointed typically should be better than a quarter of a wavelength of light where λ=633 nm, and preferably a tenth of the wavelength over each surface. Typically this level of flatness can be achieved by polishing the silicon carbide.
To form the silica layer, the polished silicon carbide surface is oxidised using any suitable oxidation technique that causes a chemical reaction of the type:
SiC+2O2→SiO2+CO2
Before doing this, however, the polished surface of the silicon carbide is cleaned of contaminants that may degrade the hydration/dehydration process of the hydroxide catalysis bonding procedure, as shown in
Once the bonding solution is applied to the first silica coated piece of silicon carbide the other piece is then gently placed on top of it, with the silica surfaces facing each other, as shown in
Bonds can be dismounted by immersing the samples in a <30% solution of sodium hydroxide in an ultrasonic bath for 30 minutes or longer. An alternative is to immerse the bond in a detergent solution instead of sodium hydroxide. Significant surface damage results from both methods so surface preparation needs to re-occur. The dismantling of the bonds is possible both during and after curing.
To demonstrate the effectiveness of this technique, two pieces of silicon carbide were bonded together for use in an optical bench. The starting material had a flatness of λ/10, and for this particular application, it was important that this be preserved. The silicon carbide pieces were firstly cleaned by submerging them in a beaker of Opticlear and immersing the beaker in an ultrasonic bath. This was repeated with each of methanol and acetone. The pieces were then placed in a quartz tube furnace at a temperature of 1150 degrees Celsius, and an oxygen environment was created to allow for the formation of the silica layer. To be more precise a wet oxidation process was used whereby zero-grade nitrogen was bubbled through de-ionised water at a temperature of 80 degrees Celsius, and then fed through the furnace at a rate of 6 litres per minute. This reacted with the silicon carbide surface to form a silica layer. Since the underlying surface layer of silicon carbide possessed a flatness of λ/10 and this was to be preserved for bonding, it was necessary to limit the thickness growth to within 250 nm. This was achieved with a furnace exposure time of 4 hours.
After oxidation, each sample was transported to a Class-100 clean room and each of the silica-coated bond surfaces was cleaned with methanol. The silica-coated surfaces were then checked to ensure that the oxide layer had not significantly degraded the surface flatness. Then, the bonding solution of a 1:4 ratio of sodium silicate solution (Na2Si3O7, approx. 27% SiO2 in 14% NaOH in H2O) to de-ionised water was dispensed on the surface of one of the bond areas, in a scale of 0.4 micro litres per cm2. The other piece was then gently placed on top of the solution-bearing piece and was slightly compressed (lightly pressed) to ensure a uniform bond. The pieces were carefully aligned and held in position for about 30-50 seconds to allow the bond to settle. Finally the bonds were cured for approximately three weeks at room temperature.
The bonds made using this technique are very strong. Four silicon-carbide to silicon-carbide bonded samples, each with a bond area of 10 mm×20 mm, were tested for strength. Each bond was made using 0.4 micro-litres per cm2 of sodium silicate bonding solution mixed with de-ionised water in a ratio of 1:4 (sodium silicate : de-ionised water). Although the time since manufacture of the bonds was less than 3 days, hanging 10 kg from each bond for 1 hour caused no sign of deterioration. The samples were then subjected to longer periods of loading and the results were as follows (Table 1):
By processing silicon carbide to have a silica based surface layer, hydroxide-catalysis bonding can be used to secure two pieces of silicon carbide together. The resulting bond is very strong, very stable, and non-polluting. There need be no mechanical distortion associated with this method as the bonding can take place at room temperature. Furthermore, the technique allows for bonding to silicon carbide in such a manner that precision positioning of the bonded parts can be achieved with relative ease. This provides an opportunity to use silicon carbide for many new applications.
The skilled reader will appreciate that variations of the disclosed arrangements are possible without departing from the scope of the invention. For example, the bonding solution/material may include additional components, such as a filler material, e.g. a silicate, and/or a property-modifying component. Accordingly the above description of the specific embodiment is made by way of example only and not for the purposes of limitation. It will be clear to the skilled person that minor modifications may be made without significant changes to the operation described.
| Number | Date | Country | Kind |
|---|---|---|---|
| 0407953.9 | Apr 2004 | GB | national |
| Filing Document | Filing Date | Country | Kind | 371c Date |
|---|---|---|---|---|
| PCT/GB05/01362 | 4/6/2005 | WO | 10/10/2006 |
