The invention generally relates to photomultipliers. More particularly, the invention relates to silicon photomultipliers (SiPM) with passive quenching and tail compensation using Reflective Pulse Compression (RPC).
A silicon photomultiplier (SiPM) device or multipixel photon counter (MPPC) is an array of small avalanche photodiodes (APDs) capable of detecting single photons and having a high gain >106. However, one non-ideal attribute of SiPM devices is the characteristic recovery time for each APD in the array after it detects a photon. This recovery period creates a pulse-response falling edge “tail”, having a relatively longer time constant than the rising edge. The recovery tail shape may even consist of multiple time-constant components or time constants that are temperature dependent, making some matched circuit techniques less effective (such as Pole-Zero cancellation, PZC).
The following general descriptions are concerned with the single-photon operation of a single SiPM APD cell, but are not intended to describe in-depth operation of a SiPM device. Prior to arrival of a photon the switch is open and capacitor Cd is initially charged from Vbias as shown in the equivalent circuit in
An arriving photon causes avalanche current to flow in the SiPM APD cell as simulated by the equivalent circuit switch closing. The capacitor Cd discharges through resistor Rd, whose small resistance value provides for a surge in current flow while the potential across the capacitor Cd decays exponentially with time constant τ(rise)=RdCd, towards the breakdown voltage Vbd. The avalanche process is quenched by the voltage drop across quenching resistor Rq.
Once the avalanche is quenched, the switch in the equivalent circuit returns to the open state, and the capacitor Cd is recharged through the resistor Rq exponentially to its initial value due to Vbias. The re-charge time has a time constant of τ(fall)=Rq(Cd+Cq).
The recharge process of the capacitor Cd and Cq is commonly known as recovery, and the recovery time depends on the product of the resistance of Rq and capacitance of Cd and Cq. During the period of avalanche multiplication and the subsequent recovery time, a SiPM APD cell is unavailable to detect a new photoelectric event.
This recovery time is reasonably consistent, but not exactly the same, for all the APD cells in the SiPM. Further when one or more SiPM APD cells are triggered during the recovery phase of the first cell, the output currents are the superposition sum of each SiPM cell response. There may be thousands to tens of thousands of cells in a SiPM device. In usage cases where there is ongoing photon flux, the first issue is that the overlap of the recovery period with subsequent SiPM APD cell pulses may occur during the recovery time of the first SiPM APD cell. The overlapping tail recovery of the first SiPM APD cell and the newly arriving photon at another SiPM APD cell will be additive in the final output response of the device making discrimination/measurement of individual photon-responses difficult as shown in
One method to compensate for the tail response is to use a pole zero circuit (PZC) in the receiver signal conditioning (after or part of an amplification stage). This can significantly reduce the length of the recovery tail. This aids greatly the first issue and improves temporal resolution of the final usable signal out of the detector/amplifier system. Since the PZC is after the TIA stage, it suffers from non-linearities associated with amplifier saturation. This method also significantly relies on the precise matching of a PZC circuit to the tail time constant of the SiPM, which can be strongly influenced by temperature and device-to-device inconcinnities. The dynamic range and the precision of tail compensation of this technique are limited.
Therefore, there is long felt need for an inventive solution to solve the recovery time and amplifier saturation problems discussed above.
One embodiment of the present invention provides a photon detection device including: a silicon photomultiplier (SiPM) configured to generate a detected signal when the SiPM absorbs a photon; an amplifier; and a transmission line stub between the SiPM and amplifier input. The SiPM connection is configured to transmit the detected signal to the amplifier and a transmission line stub is also configured to receive the SiPM signal and generate a time-delayed reflected signal back into the amplifier input; wherein the amplifier is configured to amplify a combination of the detected signal and the time-delayed reflected signal. The end of the transmission line stub is terminated with a complex impedance that can simultaneously absorb some components of the SiPM pulse response, and reflect others. A preferable arrangement is for the fast-transient response is absorbed and not reflected (terminated in the characteristic impedance of the transmission line) and the slow tail response is reflected with a 180° phase (polarity inversion). The returning inverted slow tail will be subtracted from the SiPM tail at the amplifier input, thus cancelling and compensating the tail. The total time delay of the transmission line stub, in two directions, will determine the final output pulse width. An example output pulse shape of the described invention is shown in
One embodiment of the present invention provides a photon detection method including: generating, by a silicon photomultiplier (SiPM), a detected signal when the SiPM absorbs a photon; transmitting, via a circuit interconnect, the detected signal to an amplifier and to a transmission line stub; propagating through the transmission line delay; and then termination in a complex impedance at the end of the transmission line stub that is chosen to absorb and reflect certain components of the SiPM output pulse shape; a further propagation in the transmission line stub back toward the amplifier of advantageously chosen signal shape compensation; and amplifying a combination of the detected signal and reflected compensation signal.
The description of illustrative embodiments according to principles of the present invention is intended to be read in connection with the accompanying drawings, which are to be considered part of the entire written description. In the description of embodiments of the invention disclosed herein, any reference to direction or orientation is merely intended for convenience of description and is not intended in any way to limit the scope of the present invention. Relative terms such as “lower,” “upper,” “horizontal,” “vertical,” “above,” “below,” “up,” “down,” “top” and “bottom” as well as derivative thereof (e.g., “horizontally,” “downwardly,” “upwardly,” etc.) should be construed to refer to the orientation as then described or as shown in the drawing under discussion. These relative terms are for convenience of description only and do not require that the apparatus be constructed or operated in a particular orientation unless explicitly indicated as such. Terms such as “attached,” “affixed,” “connected,” “coupled,” “interconnected,” and similar refer to a relationship wherein structures are secured or attached to one another either directly or indirectly through intervening structures, as well as both movable or rigid attachments or relationships, unless expressly described otherwise. Moreover, the features and benefits of the invention are illustrated by reference to the exemplified embodiments. Accordingly, the invention expressly should not be limited to such exemplary embodiments illustrating some possible non-limiting combination of features that may exist alone or in other combinations of features; the scope of the invention being defined by the claims appended hereto.
This disclosure describes the best mode or modes of practicing the invention as presently contemplated. This description is not intended to be understood in a limiting sense, but provides an example of the invention presented solely for illustrative purposes by reference to the accompanying drawings to advise one of ordinary skill in the art of the advantages and construction of the invention. In the various views of the drawings, like reference characters designate like or similar parts.
By using an almost shorted transmission line stub of appropriate length directly on the output of the SiPM, the recovery tail portion of the output can be subtracted from the SiPM prior to the first amplification stage. This SiPM reflective pulse compression process results in a narrower signal profile. The output from the SiPM with stub is a nearly symmetrical pulse that can be amplified appropriately and provide good temporal resolution on each photon as well as use the full dynamic range the SiPM is capable of.
This circuit shows using an amplifier, but the SiPM with RPC would work equally well with a transimpedance amplifier (TIA), a low noise amplifier (LNA) are any suitable circuit that provides amplification. One advantage of this RPC topology is that many types of amplifiers can be used without significant restrictions (AC-coupled, DC-coupled, transimpedance, etc.). Note that the portion of this circuit after the output of the first amplifier U1 can be modified or redesigned by a skilled person based on specific needs.
In one embodiment, the stub is terminated with a very low-impedance R∥L or RC∥L network, to appropriately shape the reflection and consequently the pulse shape. Example terminations are shown in
Note that the present circuit is not necessary to stay in a standard 50-Ohm impedance. An embodiment works with other termination impedances, which is important for some designs that have optimal noise with input resistance greater than 50 ohms.
Note that the transmission line TL1 may be implemented in many various ways, coaxial cable, PCB micro-strip, 2-wire cable, or may even be replaced by any delay-line device that provides signal propagation delay.
The output of the SiPM may be connected to a transmission line TL21050 in place of or in addition to, before or after, R1 as shown in
While the present invention has been described at some length and with some particularity with respect to the several described embodiments, it is not intended that it should be limited to any such particulars or embodiments or any particular embodiment, but it is to be construed with references to the appended claims so as to provide the broadest possible interpretation of such claims in view of the prior art and, therefore, to effectively encompass the intended scope of the invention. Furthermore, the foregoing describes the invention in terms of embodiments foreseen by the inventor for which an enabling description was available, notwithstanding that insubstantial modifications of the invention, not presently foreseen, may nonetheless represent equivalents thereto.
This application claims the benefit of U.S. Provisional Patent Application No. 63/109,723 filed on Nov. 4, 2020. The disclosure and entire teachings of U.S. Provisional Patent Application 63/109,723 are hereby incorporated by reference.
Number | Name | Date | Kind |
---|---|---|---|
5046139 | Kahn | Sep 1991 | A |
6218657 | Bethune et al. | Apr 2001 | B1 |
9818064 | Abdo | Nov 2017 | B1 |
20100111305 | Yuan et al. | May 2010 | A1 |
20140183339 | Dolinsky | Jul 2014 | A1 |
20180337324 | Fong et al. | Nov 2018 | A1 |
20200366381 | Van Weeren | Nov 2020 | A1 |
Number | Date | Country |
---|---|---|
1116470 | Feb 1996 | CN |
101288229 | Oct 2008 | CN |
102197496 | Sep 2011 | CN |
105547470 | May 2016 | CN |
106537792 | Mar 2017 | CN |
106716993 | May 2017 | CN |
113167875 | Jul 2021 | CN |
2466299 | Jun 2010 | GB |
2006287307 | Oct 2006 | JP |
2012013600 | Jan 2012 | JP |
2597668 | Sep 2016 | RU |
0163803 | Aug 2001 | WO |
Entry |
---|
Dance, J. B., Pulse Shaping in Nuclear Amplifiers, Instrument Practice, Jan. 1968, pp. 57-64, vol. 22, No. 1. |
Yebras, J. M., et al., “Strategies for shortening the output pulse of silicon photomultipliers”, Optical Engineering, Jul. 6, 2012, pp. 2-8, vol. 51, No. 7, SPIE. |
European Search Report with European search opinion issued by The European Patent Office for Application No. 21204975.3, mailed on Apr. 22, 2022. |
Yebras et al. “Strategies for shortening the output pulse of silicon photomultipliers”, Optical Engineering, Jul. 6, 2012, pp. 1-8, vol. 51, No. 7, SPIE (cited in the CNOA but previously made of record in an IDS filed on May 3, 2022. |
First Notification of Office Action issued by the China National Intellectual Property Administration for International Patent Application No. 202111289022.0, dated Feb. 28, 2024, with English translation attached. |
Number | Date | Country | |
---|---|---|---|
20220137244 A1 | May 2022 | US |
Number | Date | Country | |
---|---|---|---|
63109723 | Nov 2020 | US |