Claims
- 1. A method for forming a magnetic random access memory (MRAM) array, the method comprising:forming at least a first rowline of a first plane of said MRAM array; coupling a first side of said first rowline of said first plane to a first source/drain terminal of a transistor of a rowline select circuit of said MRAM array; and directly coupling a second source/drain terminal of said transistor to a current supply.
- 2. The method of claim 1 further comprising:switchably coupling a second side of said first rowline of said first plane to a voltage source.
- 3. The method of claim 1 further comprising:switchably coupling a second side of said first rowline of said first plane to ground.
- 4. The method of claim 1 further comprising:forming a first rowline for each of a plurality of planes of said MRAM array; and coupling the first side of each of said first rowlines for each of said plurality of planes to said first source/drain terminal of said transistor of said rowline select circuit.
- 5. A method for forming a magnetic random access memory (MRAM) array, the method comprising:forming a plurality of respective first rowlines of a corresponding plurality of planes of said MRAM array; coupling a first side of each of said respective first rowlines to a first source/drain terminal of a transistor of a rowline select circuit; coupling a second source drain terminal of said transistor to a current supply; switchably coupling a second side of each of said respective first rowlines to a respective plurality of voltage terminals; and switchably coupling said second side of each of said respective first rowlines to a respective plurality of ground terminals.
- 6. A method for reading a memory cell of a magnetic random access memory (MRAM) array, the method comprising:selecting a rowline of said MRAM array associated with said memory cell; connecting a first side of said selected rowline to a voltage supply; and connecting a second side of a plurality of rowlines in a stack of rowlines residing in different planes of said MRAM array, including said selected rowline, to a current supply.
- 7. A method for writing to a memory cell of a magnetic random access memory (MRAM) array, the method comprising:selecting a rowline of said MRAM array associated with said memory cell; connecting a first side of said selected rowline to ground; and connecting a second side of a plurality of rowlines in a stack of rowlines residing in different planes of said MRAM array, including said selected rowline, to a current supply.
Parent Case Info
This application is a continuation of application Ser. No. 09/941,646, filed Aug. 30, 2001, now U.S. Pat. No. 6,574,137, the entire disclosure of which is incorporated herein by reference.
US Referenced Citations (6)
Continuations (1)
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Number |
Date |
Country |
Parent |
09/941646 |
Aug 2001 |
US |
Child |
10/435029 |
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US |