Claims
- 1. A charge coupled device comprising:a semiconductor substrate of a first conductivity type; a first insulating layer formed on said semiconductor substrate; a plurality of pairs of floating electrodes formed on said first insulating layer; a plurality of pairs of second insulating layers each formed on one of said floating electrodes; and a plurality of pairs of charge transfer electrodes each formed on one of said second insulating layers, an amount of stationary charges trapped at one of each pair of said pairs of floating electrodes being different from an amount of stationary charges trapped at the other of each pair of said pairs of floating electrodes.
- 2. The device as set forth in claim 1, wherein said stationary charges are injected by charges moving from said semiconductor substrate to said charge transfer electrodes.
- 3. The device as set forth in claim 1, wherein said stationary charges are injected by charges moving from said charge transfer electrodes to said semiconductor substrate.
- 4. The device as set forth in claim 1, further comprising a semiconductor layer of a second conductivity type formed between said semiconductor substrate and said first insulating layer.
- 5. The device as set forth in claim 4, wherein said stationary charges are injected by charges moving from said semiconductor layer to said charge transfer electrodes.
- 6. The device as set forth in claim 4, wherein said stationary charges are injected by charges moving from said charge transfer electrodes to said semiconductor layer.
Priority Claims (1)
Number |
Date |
Country |
Kind |
8-188905 |
Jun 1996 |
JP |
|
Parent Case Info
This is a divisional of application Ser. No. 08/885,463 filed on Jun. 27, 1997, now U.S. Pat. No. 6,018,170 and which designated the U.S.
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Yamada |
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5530275 |
Widdershoven |
Jun 1996 |
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