Buried channel CCD

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CPC
H01L29/76833

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/76833Buried channel CCD

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Methods and systems for high bandwidth communications interface
- Patent number 12,206,531
- Issue date Jan 21, 2025
- KANDOU LABS, S.A.
- John Fox
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and systems for high bandwidth communications interface
- Patent number 11,374,801
- Issue date Jun 28, 2022
- KANDOU LABS, S.A.
- John Fox
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Image sensor with buried-channel drain (BCD) transistors
- Patent number 9,685,482
- Issue date Jun 20, 2017
- Semiconductor Components Industries, LLC
- Eric Stevens
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Semiconductor element and solid-state imaging device
- Patent number 9,202,902
- Issue date Dec 1, 2015
- National University Corporation Shizuoka University
- Shoji Kawahito
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Charge transfer device
- Patent number 7,993,952
- Issue date Aug 9, 2011
- Renesas Electronics Corporation
- Eiji Matsuyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid state imaging device and method for fabricating the same
- Patent number 7,964,451
- Issue date Jun 21, 2011
- Panasonic Corporation
- Naoto Niisoe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 7,948,048
- Issue date May 24, 2011
- Panasonic Corporation
- Takao Kuroda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid-state image sensor
- Patent number 7,880,259
- Issue date Feb 1, 2011
- Sanyo Electric Co., LTD
- Takayuki Kaida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radiation detector for detecting low-intensity radiation by means o...
- Patent number 7,847,230
- Issue date Dec 7, 2010
- Max-Planck Gesellschaft zur Foerderung der Wissenschaften e.V.
- Gerhard Lutz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid-state imaging device and method of driving the same
- Patent number 7,842,979
- Issue date Nov 30, 2010
- NEC Electronics Corporation
- Hiroyoshi Kudou
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
CCD with improved charge transfer
- Patent number 7,807,514
- Issue date Oct 5, 2010
- Eastman Kodak Company
- Christopher Parks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid state imaging apparatus, imaging apparatus and solid state im...
- Patent number 7,759,151
- Issue date Jul 20, 2010
- FUJIFILM Corporation
- Jiro Matsuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Image sensor having reset transistor
- Patent number 7,719,037
- Issue date May 18, 2010
- NEC Electronics Corporation
- Yoshizumi Haraguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radiation tolerant CCD structure
- Patent number 7,675,092
- Issue date Mar 9, 2010
- E2V Technologies (UK) Limited
- Peter James Pool
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid-state imaging device and method of driving the same
- Patent number 7,514,729
- Issue date Apr 7, 2009
- NEC Electronics Corporation
- Hiroyoshi Kudou
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
CCD device having a sequence of electrodes for charge multiplication
- Patent number 7,291,821
- Issue date Nov 6, 2007
- E2V Technologies (UK) Limited
- Mark Stanford Robbins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Image sensor with reduced sensitivity to gamma rays
- Patent number 7,173,294
- Issue date Feb 6, 2007
- The United States of America as represented by the Secretary of the Air Force
- Barry E. Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid state image sensor device and method of fabricating the same
- Patent number 6,482,667
- Issue date Nov 19, 2002
- LG Semicon Co., Ltd.
- Sun Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-layer-electrode type two-phase charge coupled device having...
- Patent number 6,432,738
- Issue date Aug 13, 2002
- NEC Corporation
- Keisuke Hatano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single-layer-electrode type two-phase charge coupled device having...
- Patent number 6,252,265
- Issue date Jun 26, 2001
- NEC Corporation
- Keisuke Hatano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge coupled device and a driving method thereof
- Patent number 6,242,768
- Issue date Jun 5, 2001
- LG Semicon Co., Ltd.
- Young-June Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid state image sensor device and method of fabricating the same
- Patent number 6,236,074
- Issue date May 22, 2001
- LG Semicon Co., Ltd.
- Sun Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Analogue misfet with threshold voltage adjuster
- Patent number 6,198,138
- Issue date Mar 6, 2001
- Sony Corporation
- Isao Hirota
- G11 - INFORMATION STORAGE
Information Patent Grant
Fabrication of solid-state imaging device having no transfer error...
- Patent number 6,194,242
- Issue date Feb 27, 2001
- NEC Corporation
- Satoshi Uchiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid-state imaging device having no transfer error of the signal c...
- Patent number 6,114,717
- Issue date Sep 5, 2000
- NEC Corporation
- Satoshi Uchiya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge coupled device and method of fabricating the same
- Patent number 6,107,124
- Issue date Aug 22, 2000
- Lg Semicon Co., Ltd.
- Yong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Analogue MISFET with threshold voltage adjuster
- Patent number 6,104,072
- Issue date Aug 15, 2000
- Sony Corporation
- Isao Hirota
- G11 - INFORMATION STORAGE
Information Patent Grant
Multi-tapped bi-directional CCD readout register
- Patent number 6,100,552
- Issue date Aug 8, 2000
- Dalsa, Inc.
- Simon Gareth Ingram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Analogue misfet with threshold voltage adjuster
- Patent number 6,084,273
- Issue date Jul 4, 2000
- Sony Corporation
- Isao Hirota
- G11 - INFORMATION STORAGE
Information Patent Grant
Charge coupled device and method of fabricating the same
- Patent number 6,043,523
- Issue date Mar 28, 2000
- Lg Semicon Co., Ltd.
- Yong Park
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS AND SYSTEMS FOR HIGH BANDWIDTH COMMUNICATIONS INTERFACE
- Publication number 20220329467
- Publication date Oct 13, 2022
- Kandou Labs, SA
- John Fox
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ELEMENT AND SOLID-STATE IMAGING DEVICE
- Publication number 20150187923
- Publication date Jul 2, 2015
- NATIONAL UNIVERSITY CORPORATION SHIZUOKA UNIVERSITY
- Shoji Kawahito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHARGE TRANSFER DEVICE
- Publication number 20100210044
- Publication date Aug 19, 2010
- NEC ELECTRONICS CORPORATION
- Eiji Matsuyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOLID-STATE IMAGING DEVICE AND METHOD OF DRIVING THE SAME
- Publication number 20090206372
- Publication date Aug 20, 2009
- NEC ELECTRONICS CORPORATION
- Hiroyoshi KUDOU
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
SOLID STATE IMAGING DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20090194795
- Publication date Aug 6, 2009
- Naoto Niisoe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOLID STATE IMAGING DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20090045442
- Publication date Feb 19, 2009
- Naoto Niisoe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHARGE TRANSFER DEVICE
- Publication number 20080237651
- Publication date Oct 2, 2008
- NEC Electronics Corporation
- Eiji Matsuyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Radiation Detector For Detecting Low-Intensity Radiation By Means o...
- Publication number 20080191123
- Publication date Aug 14, 2008
- Max-Planck-Gesellschaft zur Foerderung der Wissenschaften e.v
- Gerhard Lutz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOLID STATE IMAGING APPARATUS, IMAGING APPARATUS AND SOLID STATE IM...
- Publication number 20080173902
- Publication date Jul 24, 2008
- Jiro MATSUDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device And Method For Manufacturing Same
- Publication number 20080012048
- Publication date Jan 17, 2008
- MATSHSHITA ELECTRIC INDUSTRIAL CO., LTD.
- Takao Kuroda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Image sensor having reset transistor
- Publication number 20070278537
- Publication date Dec 6, 2007
- NEC ELECTRONICS CORPORATION
- Yoshizumi Haraguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CCD with improved charge transfer
- Publication number 20070254413
- Publication date Nov 1, 2007
- Eastman Kodak Company
- Christopher Parks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Radiation tolerant ccd structure
- Publication number 20070194351
- Publication date Aug 23, 2007
- E2V Technologies (UK) Limited
- Peter James Poole
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Solid-state imaging device and method of driving the same
- Publication number 20070096159
- Publication date May 3, 2007
- NEC ELECTRONICS CORPORATION
- Hiroyoshi Kudou
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
CCD device
- Publication number 20060231738
- Publication date Oct 19, 2006
- E2V TECHNOLOGIES (UK) LIMITED
- Mark Stanford Robbins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Solid-state image sensor
- Publication number 20060049431
- Publication date Mar 9, 2006
- SANYO ELECTRIC CO., LTD.
- Takayuki Kaida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Single-layer-electrode type two-phase charge coupled device having...
- Publication number 20010024850
- Publication date Sep 27, 2001
- Keisuke Hatano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Solid state image sensor device and method of fabricating the same
- Publication number 20010010942
- Publication date Aug 2, 2001
- LG Semicon Co., Ltd.
- Sun Choi
- H01 - BASIC ELECTRIC ELEMENTS

Buried channel CCD

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Methods and systems for high bandwidth communications interface

Methods and systems for high bandwidth communications interface

Image sensor with buried-channel drain (BCD) transistors

Semiconductor element and solid-state imaging device

Charge transfer device

Solid state imaging device and method for fabricating the same

Semiconductor device and method for manufacturing same

Solid-state image sensor

Radiation detector for detecting low-intensity radiation by means o...

Solid-state imaging device and method of driving the same

CCD with improved charge transfer

Solid state imaging apparatus, imaging apparatus and solid state im...

Image sensor having reset transistor

Radiation tolerant CCD structure

Solid-state imaging device and method of driving the same

CCD device having a sequence of electrodes for charge multiplication

Image sensor with reduced sensitivity to gamma rays

Solid state image sensor device and method of fabricating the same

Single-layer-electrode type two-phase charge coupled device having...

Single-layer-electrode type two-phase charge coupled device having...

Charge coupled device and a driving method thereof

Solid state image sensor device and method of fabricating the same

Analogue misfet with threshold voltage adjuster

Fabrication of solid-state imaging device having no transfer error...

Solid-state imaging device having no transfer error of the signal c...

Charge coupled device and method of fabricating the same

Analogue MISFET with threshold voltage adjuster

Multi-tapped bi-directional CCD readout register

Analogue misfet with threshold voltage adjuster

Charge coupled device and method of fabricating the same

Patents Applicationslast 30 patents

METHODS AND SYSTEMS FOR HIGH BANDWIDTH COMMUNICATIONS INTERFACE

SEMICONDUCTOR ELEMENT AND SOLID-STATE IMAGING DEVICE

CHARGE TRANSFER DEVICE

SOLID-STATE IMAGING DEVICE AND METHOD OF DRIVING THE SAME

SOLID STATE IMAGING DEVICE AND METHOD FOR FABRICATING THE SAME

SOLID STATE IMAGING DEVICE AND METHOD FOR FABRICATING THE SAME

CHARGE TRANSFER DEVICE

Radiation Detector For Detecting Low-Intensity Radiation By Means o...

SOLID STATE IMAGING APPARATUS, IMAGING APPARATUS AND SOLID STATE IM...

Semiconductor Device And Method For Manufacturing Same

Image sensor having reset transistor

CCD with improved charge transfer

Radiation tolerant ccd structure

Solid-state imaging device and method of driving the same

CCD device

Solid-state image sensor

Single-layer-electrode type two-phase charge coupled device having...

Solid state image sensor device and method of fabricating the same