1. Field of the Invention
The present invention is directed to a system and method for generating plasma discharge and, in particular, to a slot discharge, non-thermal plasma process and apparatus the produces a higher volume of plasma.
2. Description of Related Art
A “plasma” is a partially ionized gas composed of ions, electrons, and neutral species. This state of matter is produced by relatively high temperatures or relatively strong electric fields either constant (DC) or time varying (e.g., RF or microwave) electromagnetic fields. A plasma discharge is produced when free electrons are energized by electric fields in a background of neutral atoms/molecules. These electrons cause electron atom/molecule collisions which transfer energy to the atoms/molecules and form a variety of species which may include photons, metastables, atomic excited states, free radicals, molecular fragments, monomers, electrons, and ions. The neutral gas becomes partially or fully ionized and is able to conduct currents. The plasma species are chemically active and/or can physically modify the surface of materials and may therefore serve to form new chemical compounds and/or modify existing compounds. Discharge plasmas can also produce useful amounts of optical radiation to be used for lighting. Numerous other uses for plasma discharge are available.
U.S. Pat. Nos. 5,872,426; 6,005,349; and 6,147,452, each of which is herein incorporated by reference in their entirety, describe a glow plasma discharge device for stabilizing glow plasma discharges by suppressing the transition from glow-to-arc. A dielectric plate having an upper surface and a lower surface and a plurality of holes extending therethrough is positioned over a cathode plate and held in place by a collar. Each hole in the dielectric acts as a separate active current limiting micro-channel that prevents the overall current density from increasing above the threshold for the glow-to-arc transition. The use of capillaries in a cathode plate while successful in limiting the current in order to suppress the glow-to-arc transition also limits the amount of plasma produced. To increase the amount of plasma produced we need to increase the percentage of overall cathode area that the current limiting system occupies.
It is therefore desirable to develop a device that solves the aforementioned problem while generating a relatively large volume of non-thermal plasma.
The present invention consists of a system for generating non-thermal plasma reactor system to facilitate chemical reactions. Chemical reactions are promoted by making use of the non-thermal plasma generated in a slot discharge non-thermal plasma reactor, which can operate under various pressure and temperature regimes including ambient pressure and temperature. The device uses a relatively large volume, high density, non-thermal plasma to promote chemical reaction upon whatever gas, fluid and/or solid surface is passed through the plasma (either passed through the slot or passed through the resulting plasma jet emitted from the slot). Several examples of the chemistry capable of being performed using the apparatus and method in accordance with the present invention include the destruction of pollutants in a fluid stream, the generation of ozone, the pretreatment of air for modifying or improving combustion, the destruction of various organic compounds, or as a source of light. Additionally, chemistry can be performed on the surface of dielectric or conductive materials by the dissociation and oxidation of their molecules. In the case of pure hydrocarbons complete molecular conversion will result in the formation of carbon dioxide and water, which can be released directly to the atmosphere without any harmful health consequences.
The reactor in accordance with the present invention is designed so that the gaseous and/or liquid stream containing chemical agents such as pollutants are exposed to the relatively high density plasma region where various processes such as oxidation, reduction, ion induced decomposition, or electron induced decomposition efficiently allow for chemical reactions to take place. The ability to vary the plasma characteristics allows for tailored chemical reactions to take place by using conditions that effectively initiates or promotes the desired chemical reaction without heating up the bulk gases.
A plasma reactor includes a first dielectric having at least one slot defined therethrough and a first electrode, preferably a segmented electrode including a plurality of electrode segments, wherein each electrode segment is disposed proximate an associated slot. Each electrode segment may be formed in different shapes, for example, a plate, bar, rim, or plug. The electrode segment may be hollow, solid, or made from a porous material. The reactor may include a second electrode and dielectric with the first and second dielectrics separated by a predetermined distance to form a channel therebetween into which the plasma exiting from the slots defined in the first dielectric is discharged. The fluid to be treated is passed through the channel and exposed to the plasma discharge. If the electrode segment is hollow or made of a porous material, then the fluid/gas to be treated may be fed into the slots defined in the first dielectric and exposed therein to the maximum plasma density. Thus, the fluid/gas to be treated may be exposed to the plasma discharge both in the slots as well as in the channel between the two dielectrics. The plasma reactor is more energy efficient than conventional devices and does not require a carrier gas to remain stable at atmospheric pressure. The plasma reactor has a wide range of application, such as the destruction of pollutants in a fluid, the generation of ozone, the pretreatment of air for modifying or improving combustion, and the destruction of various organic compounds, and surface cleaning of objects.
The foregoing and other features of the present invention will be more readily apparent from the following detailed description and drawings of illustrative embodiments of the invention wherein like reference numbers refer to similar elements throughout the several views and in which:
a is a longitudinal cross-sectional view of an exemplary single annular slot discharge plasma reactor system in accordance with the present invention;
b is a lateral cross-sectional view of the plasma reactor system of
c is a top view of a single electrode segment and associated slot in the plasma reactor system in
d is a lateral cross-sectional view of the arrangement of a single electrode segment and associated slot in the reactor system in
e is a lateral cross-sectional view of another embodiment of a single annular segmented electrode slot discharge plasma reactor system in accordance with the present invention with a hollow inner segmented electrode having a substantially uniform thickness and varied slot density in the first dielectric;
f is a longitudinal cross-sectional view of yet another embodiment of a single annular segmented electrode slot discharge plasma reactor system in accordance with the present invention with a first dielectric having a nonuniform thickness and substantially uniform slot hole density;
a is a longitudinal cross-sectional view of an exemplary embodiment of a system having two annular slot discharge plasma reactors in accordance with the present invention;
b is a lateral cross-sectional lateral view of an exemplary embodiment of a system having eight annular slot discharge plasma reactors in accordance with the present invention;
a is a cross-sectional view of an exemplary hollow rectangular plug electrode segment partially inserted into an associated slot defined in the first dielectric;
b is a top view of the electrode segment of
a is a cross-sectional view of an exemplary solid rectangular plug electrode segment having a blunt edge partially inserted into an associated slot defined in the first dielectric;
b is a top view of the electrode segment of
a is a cross-sectional view of an exemplary solid rectangular plug electrode segment terminating in a razor edge partially inserted into an associated slot defined in the first dielectric;
b is a top view of the electrode segment of
a is a cross-sectional view of an exemplary solid substantially flat rectangular bar electrode segment substantially flush with an associated slot defined in the first dielectric;
b is a top view of the electrode segment of
c is a cross-sectional view of an exemplary solid T-shaped plug electrode segment a portion of which extends into an associated slot defined in the first dielectric;
d is a top view of the electrode segment of
e is a cross-sectional view of an exemplary rectangular rim electrode segment substantially flush with disposed about the perimeter of an associated slot defined in the first dielectric;
f is a top view of the electrode segment of
a is a cross-sectional view of an electrode segment associated with one slot of the first dielectric also having auxiliary slots defined therein for the injection of a reagent fluid;
b is a top view of the embodiment of
a is a cross-sectional view of an alternative embodiment of an electrode segment associated with a central slot of a first dielectric having auxiliary slots in fluid communication with the central slot for the injection of a reagent fluid;
b is a top view of the embodiment of
The slot discharge non-thermal plasma reactor in accordance with the present invention is designed so that a solid and/or a fluid (e.g., a liquid, vapor, gas, or any combination thereof) containing chemical agents, for example, an atomic element or a compound, is exposed to a relatively high density plasma in which various processes, such as oxidation, reduction, ion induced composition and/or electron induced composition, efficiently allow for chemical reactions to take place. By way of example, the chemical agents may be Volatile Organic Compounds (VOCs), Combustion Air or Combustion Exhaust Gases. The ability to vary the energy density allows for tailored chemical reactions to take place by using enough energy to effectively initiate or promote desired chemical reactions without heating up the bulk gas.
By way of example, the present invention is shown and described with respect to the application of using the plasma reactor to purify or treat a contaminated fluid. It is, however, within the intended scope of the invention to use the device and method for other applications such as the treatment of fluids, vapors, gases, or any combination thereof. Furthermore, the inventive plasma reactor may be used for the treatment of solid or porous surfaces.
Longitudinal and lateral cross-sectional views of an exemplary single annular slot discharge plasma reactor system in accordance with the present invention are shown in
Within the reaction chamber 155 is an annular first dielectric 135 having a plurality of longitudinally arranged slots 146 defined radially outward therethrough. A “slot” is defined as an aperture or opening whose length is greater than its width and whose maximum length is limited only by the dimensions of the dielectric in which it is defined. For example, the slot may have a width of about 1/32 inch and about 16 inches in length (i.e., a ratio of length to width of 512:1) in the first dielectric plate. A one inch border may be retained between the end of the slot and the end of the dielectric plate. The slots may be arranged so that adjacent slots are separate from one another by about ⅛ inch. This example and its dimensions are not intended to limit the scope of the present invention. In a preferred embodiment, the length to width ratio is at least approximately 10:1. Greater length to width ratios are possible even ratios larger in size by orders of magnitude such as at least approximately 100:1 or at least approximately 1000:1. In another embodiment, the length to width ratio is approximately 10:1 to approximately 100:1, 1000:1, or 10000:1 or approximately 100:1 to approximately 1000:1 or 10000:1. These are but a few examples, other length to width slot ratios are contemplated and within the intended scope of the invention.
In a capillary discharge plasma reactor the capillary dimensions are substantially equal to one another in the x-y plane defined as the lateral plane substantially transverse to the longitudinal or axial direction of the capillary. Thus, there is little, if any, difference in which radial direction the electron drifts as it travels down the capillary since the probability of quenching (colliding with a wall) prior to emerging from the capillary is substantially equivalent in both the x- and y-directions. In the case of a slot the length, e.g., the y-direction, is substantially greater than that of its width, e.g., the x-direction. Preferably, the length to width ratio of the slot is at least approximately 10 to 1. As a result of this substantially greater length to width ratio, the probability that an electron while drifting in a z-direction down the slot through the dielectric will collide or interact with the wall before emerging from the slot is significantly reduced. This reduction in the probability of wall collisions means less quenching and thus a higher plasma density per unit area of slot cross-section as compared to plasma density per unit area of a capillary discharge configuration. Despite the decreased quenching the slot still adequately suppresses glow-to-arc transition.
In addition, regardless of the number of capillaries arranged in series one after the other packed together, the slot configuration in accordance with the present invention is able to generate a greater volume of high density plasma relative to that of the capillary discharge design. Thus, a significantly greater area and volume of high density plasma may be realized using the slot configuration in comparison to that of the capillary configuration described in the parent application (U.S. patent application Ser. No. 09/738,923, filed Dec. 15, 2000). As a result of the increased volume of high density plasma generated, a relatively large volume of fluid/gas to be treated may be exposed to the plasma. Moreover this slot configuration may be readily and inexpensively manufactured.
Referring to
Although shown in
As previously mentioned,
Plasma is generated in a channel 125 between the dielectrics 115, 135 and in the slots 146 defined in the first dielectric 135. The slots 146 defined in the first dielectric 135 can vary in diameter, preferably from a few microns to a few millimeters, and can also vary in density or spacing relative to one another. The density or spacing of the slots 146 may be varied, as desired, so as to generate a plasma discharge over a portion or the entire width of the reaction chamber 155. In addition, the width of the slots 146 may be selected so as to obtain a desired slot plasma action.
In operation, fluid to be treated is received at the inlet 150 and passed through the transition conduit 110 into the channel 125 of the reaction chamber 155. If the electrode segments 140 are hollow (or porous) and substantially aligned with the slots 146, as shown in
e and 1f show exemplary alternative embodiments of a single annular slot discharge plasma reactor in accordance with the present invention. Despite their overall similar configuration, the embodiments shown in
Multiple annular reactors may be combined in a single system. By way of example,
Instead of the reactor having an annular or tubular shape as shown and described in the embodiments thus far, the reactor may have a rectangular shape as shown in
Multiple rectangular plate reactors such as the one shown in
In the embodiments shown in
Below are four exemplary reaction mechanisms that play an important role in plasma enhanced chemistry. Common to all mechanisms are electron impact dissociation and ionization to form reactive radicals. The four reaction mechanisms are summarized in the examples below:
In the foregoing embodiments the electrode segments comprising the first electrode have been shown and described as a rectangular shaped rim with a hollow opening disposed about the perimeter of each slot. However, the present invention contemplates that the electrode segments may be configured in many different ways.
a and 6b show a cross-sectional view and a top view, respectively, of a solid rectangular bar segmented electrode 610 having a blunt end inserted partially into a slot 600 defined in a first dielectric 605. In an alternative embodiment, the electrode segment 610 may be disposed above, substantially flush with, or inserted to any desired depth into the slot 600. The rectangular bar electrode segment 610 may be solid or porous. If a porous electrode 610 is used, the fluid to be treated may be passed directly through the electrode segment thereby optimizing exposure to the plasma discharge that occurs within the slot. Since the fluid to be treated when passed through the electrode segment may be treated by the plasma discharge created in the slot 600 itself, in this case, the second electrode and second dielectric may be eliminated altogether. Another advantage to using a porous electrode 610 is that it also serves as a conduit for the supply of a reagent gas to improve the stability, optimize the chemical reactions with the plasma, or perform chemical reactions within the plasma.
In
a-8f show still other embodiments of the configuration of the segmented electrode. In particular,
Different configurations for the electrode segment and its associated slot may be used based on any one or more of the following conditions: i) whether the electrode segment is solid, hollow, or porous; ii) the outer and/or inner shape of the electrode segment; iii) the dimensions of the electrode segment; and iv) whether the electrode segment is disposed above, substantially flush with the dielectric, or inserted at a predetermined depth into the slot.
The portion of the reaction chamber shown in
It is also within the intended scope of the invention to define auxiliary channels of any shape, dimension, or angle of direction in the first dielectric that do not have an associated electrode segment.
Each of the aforementioned segmented electrode configurations have been shown and described by way of example. The features of each embodiment may be modified or combined with those of other embodiments as desired. The invention is not to be limited to the particular shape, dimension, number, or orientation of the electrodes or slots shown by way of example in the figures.
The aforementioned embodiments have been described with reference to the treatment or purification of a contaminated fluid. Another application for the use of the plasma reactor in accordance with the present invention is for treating or cleaning a solid or porous surface.
In yet another application, the slot discharge plasma system in accordance with the present invention may be used to purify gases.
The slot discharge, non-thermal plasma reactors in accordance with the present invention can be used to perform a variety of chemical reactions by exposing a fluid or surface containing the desired reactants to the high density plasma region where various processes such as oxidation, reduction, ion induced decomposition, or electron induced decomposition efficiently allow for chemical reactions to take place. The fluid to be treated may be fed either through the channel between the two dielectrics (transversely to the flow of the plasma discharged from the slots defined in the dielectric) and/or through the slots themselves (the point of origin of the plasma). Examples of reactions include: chemistry on various organic compounds such as Volatile Organic Compounds (VOCs) either single compounds or mixtures thereof; semi-volatile organic compounds, Oxides of Nitrogen (NOx), Oxides of Sulfur (SOx), high toxic organics, and any other organic compound that can be in the form of vapors of aerosols. In addition, the reactor can be used to pretreat combustion air to inhibit formation of NOx and increase fuel efficiency. Additional uses of the plasma includes the generation of ozone and ultraviolet light, and treatment of contaminated surfaces.
All references, publications, patents, and pending applications referred to herein are each incorporated by reference in their entirety.
Thus, while there have been shown, described, and pointed out fundamental novel features of the invention as applied to a preferred embodiment thereof, it will be understood that various omissions, substitutions, and changes in the form and details of the devices illustrated, and in their operation, may be made by those skilled in the art without departing from the spirit and scope of the invention. For example, it is expressly intended that all combinations of those elements and/or steps which perform substantially the same function, in substantially the same way, to achieve the same results are within the scope of the invention. Substitutions of elements from one described embodiment to another are also fully intended and contemplated. It is also to be understood that the drawings are not necessarily drawn to scale, but that they are merely conceptual in nature. It is the intention, therefore, to be limited only as indicated by the scope of the claims appended hereto.
This application claims the benefit of U.S. Provisional Application No. 60/358,340, filed Feb. 19, 2002, and is a continuation-in-part of U.S. patent application Ser. No. 09/738,923, filed Dec. 15, 2000 now U.S. Pat. No. 6,818,193, which claims the benefit of U.S. Provisional Application No. 60/171,198, filed Dec. 15, 1999 and U.S. Provisional Application No. 60/171,324, filed Dec. 21, 1999, which are all hereby incorporated by reference in their entirety.
Number | Name | Date | Kind |
---|---|---|---|
3594065 | Marks | Jul 1971 | A |
3948601 | Fraser et al. | Apr 1976 | A |
4147522 | Gonas et al. | Apr 1979 | A |
4357151 | Helfritch et al. | Nov 1982 | A |
4698551 | Hoag | Oct 1987 | A |
4818488 | Jacob | Apr 1989 | A |
4885074 | Susko et al. | Dec 1989 | A |
4898715 | Jacob | Feb 1990 | A |
4931261 | Jacob | Jun 1990 | A |
5033355 | Goldstein et al. | Jul 1991 | A |
5062708 | Liang et al. | Nov 1991 | A |
5084239 | Moulton et al. | Jan 1992 | A |
5115166 | Campbell et al. | May 1992 | A |
5178829 | Moulton et al. | Jan 1993 | A |
5184046 | Campbell | Feb 1993 | A |
5186893 | Moulton et al. | Feb 1993 | A |
5288460 | Caputo et al. | Feb 1994 | A |
5325020 | Campbell et al. | Jun 1994 | A |
5376332 | Martens et al. | Dec 1994 | A |
5387842 | Roth et al. | Feb 1995 | A |
5408160 | Fox | Apr 1995 | A |
5413758 | Caputo et al. | May 1995 | A |
5413759 | Campbell et al. | May 1995 | A |
5413760 | Campbell et al. | May 1995 | A |
5414324 | Roth et al. | May 1995 | A |
5451368 | Jacob | Sep 1995 | A |
5472664 | Campbell et al. | Dec 1995 | A |
5476501 | Stewart et al. | Dec 1995 | A |
5482684 | Martens et al. | Jan 1996 | A |
5498526 | Caputo et al. | Mar 1996 | A |
5549735 | Coppom | Aug 1996 | A |
5593476 | Coppom | Jan 1997 | A |
5593550 | Stewart et al. | Jan 1997 | A |
5593649 | Fisher et al. | Jan 1997 | A |
5594446 | Vidmar et al. | Jan 1997 | A |
5603895 | Martens et al. | Feb 1997 | A |
5620656 | Wensky et al. | Apr 1997 | A |
5637198 | Breault | Jun 1997 | A |
5645796 | Caputo et al. | Jul 1997 | A |
5650693 | Campbell et al. | Jul 1997 | A |
5667753 | Jacobs et al. | Sep 1997 | A |
5669583 | Roth | Sep 1997 | A |
5686789 | Schoenbach et al. | Nov 1997 | A |
5695619 | Williamson et al. | Dec 1997 | A |
5733360 | Feldman et al. | Mar 1998 | A |
5753196 | Martens et al. | May 1998 | A |
5872426 | Kunhardt et al. | Feb 1999 | A |
5939829 | Schoenbach et al. | Aug 1999 | A |
6007742 | Czernichowski et al. | Dec 1999 | A |
6016027 | DeTemple et al. | Jan 2000 | A |
6027616 | Babko-Malyi | Feb 2000 | A |
6055349 | Seino et al. | Apr 2000 | A |
6113851 | Soloshenko et al. | Sep 2000 | A |
6146724 | Roth | Nov 2000 | A |
6147452 | Kunhardt et al. | Nov 2000 | A |
6170668 | Babko-Malyi | Jan 2001 | B1 |
6228330 | Herrmann et al. | May 2001 | B1 |
6232723 | Alexeff | May 2001 | B1 |
6245126 | Feldman et al. | Jun 2001 | B1 |
6245132 | Feldman et al. | Jun 2001 | B1 |
6255777 | Kim et al. | Jul 2001 | B1 |
6322757 | Cohn et al. | Nov 2001 | B1 |
6325972 | Jacobs et al. | Dec 2001 | B1 |
6333002 | Jacobs et al. | Dec 2001 | B1 |
6365112 | Babko-Malyi et al. | Apr 2002 | B1 |
6372192 | Paulauskas et al. | Apr 2002 | B1 |
6375832 | Eliasson et al. | Apr 2002 | B1 |
6383345 | Kim et al. | May 2002 | B1 |
6395197 | Detering et al. | May 2002 | B1 |
6399159 | Grace et al. | Jun 2002 | B1 |
6433480 | Stark et al. | Aug 2002 | B1 |
6451254 | Wang et al. | Sep 2002 | B1 |
6458321 | Platt, Jr. et al. | Oct 2002 | B1 |
6475049 | Kim et al. | Nov 2002 | B2 |
6497839 | Kasegawa et al. | Dec 2002 | B1 |
6509689 | Kim et al. | Jan 2003 | B1 |
6545411 | Kim et al. | Apr 2003 | B1 |
6548957 | Kim et al. | Apr 2003 | B1 |
6570172 | Kim et al. | May 2003 | B2 |
6580217 | Kim et al. | Jun 2003 | B2 |
6598481 | Schultz | Jul 2003 | B1 |
6599471 | Jacobs et al. | Jul 2003 | B2 |
6627150 | Wang et al. | Sep 2003 | B1 |
6632323 | Kim et al. | Oct 2003 | B2 |
6635153 | Whitehead | Oct 2003 | B1 |
6673522 | Kim et al. | Jan 2004 | B2 |
6685523 | Kim et al. | Feb 2004 | B2 |
6818193 | Christodoulatos et al. | Nov 2004 | B2 |
20010031234 | Christodoulatos et al. | Oct 2001 | A1 |
20020011203 | Kim | Jan 2002 | A1 |
20020011770 | Kim et al. | Jan 2002 | A1 |
20020045396 | Kim | Apr 2002 | A1 |
20020092616 | Kim | Jul 2002 | A1 |
20020105259 | Kim | Aug 2002 | A1 |
20020105262 | Kim | Aug 2002 | A1 |
20020122896 | Kim et al. | Sep 2002 | A1 |
20020124947 | Kim | Sep 2002 | A1 |
20020126068 | Kim et al. | Sep 2002 | A1 |
20020127972 | Kim et al. | Sep 2002 | A1 |
20020139659 | Yu et al. | Oct 2002 | A1 |
20020144903 | Kim et al. | Oct 2002 | A1 |
20020148816 | Jung et al. | Oct 2002 | A1 |
20020187066 | Yu et al. | Dec 2002 | A1 |
20030003767 | Kim et al. | Jan 2003 | A1 |
20030015505 | Yu et al. | Jan 2003 | A1 |
20030035754 | Sias et al. | Feb 2003 | A1 |
20030048240 | Shin et al. | Mar 2003 | A1 |
20030048241 | Shin et al. | Mar 2003 | A1 |
20030062837 | Shin et al. | Apr 2003 | A1 |
20030070760 | Kim et al. | Apr 2003 | A1 |
20030071571 | Yu et al. | Apr 2003 | A1 |
20030085656 | Kunhardt et al. | May 2003 | A1 |
20030127984 | Kim et al. | Jul 2003 | A1 |
20030134506 | Kim et al. | Jul 2003 | A1 |
20030141187 | Sohn et al. | Jul 2003 | A1 |
20040022673 | Protic | Feb 2004 | A1 |
Number | Date | Country |
---|---|---|
1 084 713 | Mar 2001 | EP |
1 378 253 | Jan 2004 | EP |
0144790 | Jun 2001 | WO |
WO-0249767 | Jun 2002 | WO |
Number | Date | Country | |
---|---|---|---|
20040037756 A1 | Feb 2004 | US |
Number | Date | Country | |
---|---|---|---|
60358340 | Feb 2002 | US | |
60171324 | Dec 1999 | US | |
60171198 | Dec 1999 | US |
Number | Date | Country | |
---|---|---|---|
Parent | 09738923 | Dec 2000 | US |
Child | 10371243 | US |