This invention relates to an SOI substrate, a semiconductor device using the SOI substrate, and a method of manufacturing the same. Herein, an SOI substrate is normally used as an abbreviation of a Silicon On Insulator substrate and the following description will be given of examples using silicon. However, this invention is also usable as a substrate containing a semiconductor other than silicon, such as germanium, gallium, or arsenic (i.e. a Semiconductor On Insulator substrate).
Currently, a MOS device using Si (silicon) is widely used as a semiconductor device and it is proposed to perform a reduction in parasitic capacitance or the like, an improvement in threshold value, or the like by forming such a device on a semiconductor layer of an SOI substrate instead of forming it on a Si wafer. As the SOI substrate for use in such an application, since the manufacture is easy, use is often made of an SOI substrate in which a base for support is formed of Si, a SiO2 insulator layer is provided thereon, and a semiconductor layer made of Si is provided on the insulator layer for element formation. That is, conventionally, the SOI substrate is usually such that the base for support and the semiconductor layer for element formation are both formed of Si.
For example, Patent Document 1 discloses a method of manufacturing an SOI substrate in which an element-side Si substrate and a support-side Si substrate are bonded together through an oxide film. Specifically, Patent Document 1 defines a method of manufacturing an SOI substrate by forming a high-concentration impurity region and a polishing stopper on a surface of an element-side Si substrate, growing a silicon oxide film on the high-concentration impurity region and the polishing stopper, bonding a support-side Si substrate to the silicon oxide film, and then polishing the element-side Si substrate from its other surface to the polishing stopper. According to this manufacturing method, it is possible to obtain SOI substrates with a Si layer thickness of 0.1 μm or less and a variation of 5% or less.
Further, Patent Document 2 discloses a method of manufacturing an SOI substrate in which a silicon nitride film, instead of a silicon oxide film, is deposited on a polished surface of a silicon wafer and another silicon wafer is overlapped and bonded to a surface of the silicon nitride film under heat and pressure. According to this method, since the two silicon wafers are bonded together through the interposed silicon nitride film having a thermal expansion coefficient close to that of silicon, it is possible to prevent the occurrence of bending in the SOI substrate.
On the other hand, in the technical field of this type of semiconductor device, it is required to increase as much as possible the size of substrates for use in the device manufacture, thereby reducing the cost.
Patent Document 1: JP-A-H8-115975
Patent Document 2: JP-A-H5-160087
If the methods proposed in Patent Documents 1 and 2, etc. are used in terms of such a requirement for the increase in size of SOI substrates, there often arises a situation in which it is not possible to satisfy a recent requirement. For example, if an attempt is made to form a circular substrate with a diameter of 450 mm or a square substrate with a side of 500 mm, there arises a problem that the substrate is easily cracked or warped. That is, the fact is found that if use is made of a substrate in which the support side and the element side are both formed of the same Si, it is not possible to sufficiently satisfy the requirement for the increase in size.
Further, there is a problem that since the heat conduction of a material of a base is poor in a conventional SOI substrate, the heat generated from many devices formed on a semiconductor layer is hard to dissipate through the base so that the operating speed of the devices is reduced.
Further, if Si for use as the above-mentioned base is produced by a floating zone method (FZ method), the Si formed by the FZ method has a purity higher than that of Si formed by a CZ method being a general Si production method, but, because of its low oxygen concentration, is mechanically fragile and tends to be warped. In view of this, it is reportedly difficult to increase the size using Si by the FZ method.
Therefore, it is an object of this invention to provide an SOI substrate that is hard to crack and warp.
It is another object of this invention to provide an SOI substrate excellent in heat conduction.
It is still another object of this invention to provide a large-size SOI substrate using Si produced by the FZ method.
This invention is featured by an SOI substrate comprising a base, an insulator layer provided on one surface of the base, and a semiconductor layer provided on the insulator layer, wherein a material of the base comprises a material that is hard to crack as compared with a material of the semiconductor layer.
Furthermore, this invention is featured in that the material of the base has a bending strength of 200 MPa or more.
Moreover, this invention is featured in that the material of the base has a Young's modulus of 290 GPa or more.
Further, this invention is featured in that the material of the base has a thermal conductivity of 180 W/m·K or more.
It is preferable that the material of the base contains at least one selected from the group consisting of SiC, sapphire, silicon nitride, and aluminum nitride, and especially selected from either SiC or aluminum nitride. The material of the insulator layer may contain at least one of silicon oxide and silicon nitride. The material of the semiconductor layer is, for example, Si and, in this invention, is not limited to Si produced by the CZ method, but may be Si produced by the FZ method.
It is preferable that the substrate has a plane including, on its inside, a circle with a diameter of 400 mm or more, or a square which may have especially angles of four corners of the substrate between 85 to 95 degrees, respectively.
This invention also provides a semiconductor device which has a region wherein at least a part of a semiconductor element is formed in the semiconductor layer of the SOI substrate mentioned above.
According to this invention, there is obtained an SOI substrate that is hard to crack and warp. Further, according to this invention, there is obtained a substrate excellent in heat conduction.
Hereinbelow, a preferred embodiment to which this invention is applied will be described in detail with reference to the drawings.
First, referring to
Then, as shown in
As illustrated, the SiO2 film 2 is formed not only at the front and back surfaces of the silicon substrate 1, but also at the side surfaces thereof, i.e. the SiO2 film 2 is formed over all the surfaces of the silicon substrate 1. Subsequently, as shown in
On the other hand, as shown in
Then, as shown in
In the above-mentioned example, the description has been given of the case where H (hydrogen) ions are implanted on the surface side, bonded to the silicon substrate 1, of the silicon carbide substrate 12, but any one kind of H (hydrogen) ions, Ar (argon) ions, He (helium) ions, Kr (krypton) ions, and Ne (neon) ions may be implanted or a plurality of kinds of ions combining those ions may be implanted.
In this manner, as shown in
On the other hand, as shown in
Next, as a modification of the above-mentioned embodiment, a description will be given, referring to
First, dilute hydrofluoric acid cleaning is carried out in a pretreatment process and, as a result, SiC dangling bonds on a surface of a silicon carbide substrate 12 are terminated with hydrogen. In
Then, a Kr/O2 mixed gas is introduced at 400/80 sccm into the same plasma processing chamber and simultaneously a SiH4 gas is introduced at 0.2 sccm. In this event, the pressure in the processing chamber is maintained at about 133 Pa (1 Torr). The temperature may be set to room temperature. In a high-density excited plasma in which the Kr gas and the O2 gas are mixed, Kr radicals and O2 molecules in an intermediate excited state collide with each other so that, a large amount of atomic oxygen O radicals can be efficiently produced.
By CVD reaction using the atomic oxygen O radicals and the SiH4 gas, a silicon oxide film 22 with a thickness of about 100 nm is deposited/formed on the surface of the silicon carbide substrate 12 as shown in
Then, after purging the inside of the processing chamber with Kr, a Kr/O2/NO mixed gas is introduced at 1000/30/0.001 sccm and, while setting the pressure in the processing chamber to about 133 Pa (1 Torr) and the temperature of the silicon carbide substrate 12 to 600° C., the microwave is supplied again to generate a high-density plasma, thereby changing the properties of the silicon oxide film 22 shown in
On the silicon layer 23 serving as a semiconductor layer of the above-mentioned SOI substrate, an insulating film in the form of, for example, an oxide film, a nitride film, or a high-k film is formed as a gate insulating film, a gate electrode is deposited thereon, and by further performing a patterning process, an ion implantation process, a protective film forming process, a wiring layer forming process, a hydrogen sintering process, and so on, it is possible to form a semiconductor integrated circuit including transistors and capacitors. That is, the semiconductor layer is used as one region for semiconductor element formation.
In the above-mentioned embodiment, the description has been given of the example in which SiC is used as the material of the base of the SOI substrate. However, instead of SiC, sapphire, silicon nitride, aluminum nitride, or the like may be used alone or in combination with SiC.
Herein, referring to
Further, as shown in
Further, while the thermal conductivity of the silicons (Si) shown in
Using an SOI substrate according to this invention, it is possible to form high-speed high-density semiconductor elements or semiconductor devices. Particularly, this invention is suitable for forming an integrated circuit in which semiconductor elements such as CMOSs are integrated in a high density.
Number | Date | Country | Kind |
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2007-184896 | Jul 2007 | JP | national |
Filing Document | Filing Date | Country | Kind | 371c Date |
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PCT/JP2008/055486 | 2/25/2008 | WO | 00 | 1/4/2010 |