SOLID-STATE IMAGE SENSING DEVICE INCLUDING ANTI-REFLECTION STRUCTURE INCLUDING POLYSILICON AND METHOD OF MANUFACTURING THE SAME

Abstract

A solid-state image sensing device including an anti-reflection structure that uses polysilicon and a method of manufacturing the same, in which the solid-state image sensing device includes a photodiode region and a transistor region. The photodiode region includes a semiconductor substrate, a first anti-refection layer, a second anti-reflection layer, and a top layer. The first anti-reflection layer is formed on the semiconductor substrate, and the second anti-reflection layer is formed on the first anti-reflection layer. The top layer is formed on the second anti-reflection layer. Each of the semiconductor substrate and the second anti-reflection layer is formed of a first material, and each of the first anti-reflection layer and the top layer is formed of a second material different from the first material.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

Exemplary embodiments of the present invention will be understood in more detail from the following descriptions taken in conjunction with the attached drawings in which:

FIG. 1A is a sectional view of a known, generic solid-state image sensing device;

FIG. 1B is a sectional view of a photodiode region of the device taken along a line I-I′ of FIG. 1A;

FIG. 2 is a graph illustrating transmittance reduction of the solid-state image sensing device of FIG. 1 in a blue wavelength region;

FIG. 3A is a sectional view of a solid-state image sensing device according to an exemplary embodiment of the present invention;

FIG. 3B is a sectional view of a solid-state image sensing device according to an exemplary embodiment of the present invention;

FIGS. 4A and 4B are graphs illustrating optical characteristics of silicon;

FIGS. 5A through 5C are sectional views illustrating a process of manufacturing a solid-state image sensing device according to an exemplary embodiment of the present invention;

FIGS. 6A through 6C are sectional views illustrating a process of manufacturing a solid-state image sensing device according to an exemplary embodiment of the present invention; and

FIG. 7 is a graph comparing the transmittance of a solid-state image sensing device according to an exemplary embodiment of the present invention and that of a known solid state image sensing device.

Claims

1. A solid-state image sensing device having a photodiode region and a transistor region, the photodiode region comprising: a semiconductor substrate;a first anti-reflection layer formed on the semiconductor substrate;a second anti-reflection layer formed on the first anti-reflection layer; anda top layer formed on the second anti-reflection layer,

2. The solid-state image sensing device of claim 1, wherein the first material comprises polysilicon, and the second material comprises silicon oxide.

3. A solid-state image sensing device having a photodiode region and a transistor region, the photodiode region comprising: a semiconductor substrate formed of a first material;a top layer formed in an upper portion of the photodiode region and formed of a second material different from the first material; anda plurality of anti-reflection layers formed between the semiconductor substrate and the top layer,

4. The solid-state image sensing device of claim 3, wherein the first material comprises polysilicon, and the second material comprises silicon oxide.

5. A solid-state image sensing device having a photodiode region and a transistor region, the photodiode region comprising: a semiconductor substrate formed of a first material;a top layer formed in an upper portion of the photodiode region and formed of a second material different from the first material; anda plurality of anti-reflection layers formed between the semiconductor substrate and the top layer,

6. The solid-state image sensing device of claim 5, wherein the first material comprises polysilicon, and the second material comprises silicon oxide.

7. A method of manufacturing a solid-state image sensing device having a photodiode region and a transistor region, the method comprising: forming an insulation layer formed of a second material on a semiconductor substrate formed of a first material;forming a gate on a portion of the insulation layer in the transistor region;forming a first anti-reflection layer formed of the second material on the semiconductor substrate according to a profile of the gate;forming a second anti-reflection layer formed of the first material on the first anti-reflection layer;forming a top layer formed of the second material on the second anti-reflection layer; andetching the first anti-reflection layer, the second anti-reflection layer, and the top layer formed on the transistor region to selectively remove the first anti-reflection layer, the second anti-reflection layer, and the top layer on the gate, and to create a transistor spacer including the first anti-reflection layer, the second anti-reflection layer, and the top layer on lateral sides of the gate.

8. The method of claim 7, wherein the etching step is performed using a mask process.

9. The method of claim 7, wherein the first material comprises polysilicon, and the second material comprises silicon oxide.

10. A method of manufacturing a solid-state image sensing device having a photodiode region and a transistor region, the method comprising: forming an insulation layer formed of a second material on a semiconductor substrate formed of a first material;forming a gate on a portion of the insulation layer in the transistor region;forming a first anti-reflection layer formed of the second material on the semiconductor substrate according to a profile of the gate;forming a spacer precursor layer formed of a third material on the first anti-reflection layer;selectively removing the spacer precursor layer excluding a portion of the spacer precursor layer that is located on lateral sides of the gate to create a transistor spacer;forming a second anti-reflection layer formed of the first material on the semiconductor substrate according to the profile of the gate and the transistor spacer;forming a top layer formed of the second material on the second anti-reflection layer; andremoving portions of the first anti-reflection layer, the second anti-reflection layer, and the top layer formed on the transistor region.

11. The method of claim 10, wherein the removing step comprises forming a photoresist on the photodiode region.

12. The method of claim 11, wherein the first material comprises polysilicon, the second material comprises silicon oxide, and the third material comprises silicon nitride.