Claims
- 1. A transistor structure comprising:a substrate; a gate electrode in communication with a gate address line; a drain electrode in communication with a drain address line; a source electrode in communication with a device electrode; a channel defined between said source and drain electrodes; and a variably doped contact layer system variably doped throughout its thickness, said variably doped contact layer system being located at least between said drain electrode and a semiconductor layer.
- 2. The transistor structure of claim 1, wherein said contact layer system directly contacts each of said source electrode, said drain electrode, and said semiconductor layer, and wherein said contact layer system is from about 150-1,200 Å thick at a portion thereof.
- 3. The transistor structure of claim 1, wherein said contact layer system has a first doping density adjacent said semiconductor layer and a second doping density adjacent at least one of said source and drain electrodes, and wherein said second doping density includes more dopant than said first doping density so that said contact layer system is more heavily doped adjacent at least one of said source and drain electrodes than adjacent said semiconductor layer.
Parent Case Info
This is a continuation of application Ser. No. 09/079,225 now U.S. Pat. No. 5,917,199, filed May 15, 1998, and incoporated herein by reference.
US Referenced Citations (9)
Continuations (1)
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Number |
Date |
Country |
Parent |
09/079225 |
May 1998 |
US |
Child |
09/229317 |
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US |