BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a cross-sectional view showing a relevant portion of a solid-state imaging device according to a first embodiment of the present invention.
FIGS. 2A to 2J are cross-sectional views illustrating the steps of a method for manufacturing the solid-state imaging device of the first embodiment.
FIGS. 3A to 3E are enlarged cross-sectional views of relevant portions of FIGS. 2B to 2F, respectively.
FIG. 4 is a cross-sectional view illustrating another configuration of a high concentration implanted isolation layer of FIG. 3E.
FIG. 5 is a schematic plan view illustrating a configuration of a pixel cell of a solid-state imaging device according to a second embodiment of the present invention.
FIG. 6A is a schematic plan view of a floating diffusion layer of the solid-state imaging device of the second embodiment showing the shape of the floating diffusion layer and a portion thereof on which stress concentrates.
FIG. 6B is a schematic plan view of a floating diffusion layer of a solid-state imaging device of a comparative example showing the shape of the floating diffusion layer and a portion thereof on which stress concentrates.
FIG. 7 is a schematic plan view showing a part of a pixel cell of a conventional solid-state imaging device.
FIG. 8 is a circuit diagram showing a configuration of a MOS-type solid-state imaging device.
FIG. 9 is a plan view showing a configuration of a region of a photodiode and a MOS transistor formed in the solid-state imaging device of FIG. 8.
FIG. 10 is a cross-sectional view taken along the line A-A of FIG. 9.