The present invention relates to a solid-state photodetector.
Conventionally, a solid-state imaging device (solid-state photodetector) including a photoelectric converter that outputs a signal in accordance with the intensity of received light has been disclosed. Such a solid-state photodetector is disclosed in U.S. Patent Application Publication No. 2010/0148289, Japanese Patent Laid-Open No. 2016-58507, and Japanese Translation of PCT International Application Publication No. 2013-518414, for example.
A front surface incidence type solid-state imaging device described in U.S. Patent Application Publication No. 2010/0148289 includes a semiconductor substrate including a photoelectric converter that outputs a signal in accordance with the intensity of received light, a light receiving surface, and readout wiring disposed on the light receiving surface. The photoelectric converter and the readout wiring are covered with a surface film, and light is incident on the photoelectric converter from the photoelectric converter surface (surface) side via the surface film.
However, in the front surface incidence type solid-state imaging device described in U.S. Patent Application Publication No. 2010/0148289, light reflected by a surface of the photoelectric converter and light incident from a different portion of a light incident surface of the surface film (a portion different from a portion on which the reflected light is incident) interfere (multiple reflection interfere) with each other, and the sensitivity disadvantageously becomes unstable.
In a back surface incidence type solid-state imaging device disclosed in Japanese Patent Laid-Open No. 2016-58507, a light shielding film provided on a surface film on the surface side of a semiconductor substrate is uneven. Thus, the phase of light reflected by the light shielding film changes due to the uneven shape, and thus the phase of the light reflected by the light shielding film and the phase of light incident on a light receiving surface (back surface) from a different portion of the semiconductor substrate can be different from each other. Consequently, interference (multiple reflection interference in the semiconductor substrate) between the light incident on the light receiving surface of a photoelectric converter and the light reflected on the light shielding film side is significantly reduced or prevented. Thus, a variation in the intensity of a signal detected by the photoelectric converter due to the light interference is significantly reduced or prevented.
In a back surface incidence type solid-state imaging device disclosed in Japanese Translation of PCT International Application Publication No. 2013-518414, a fringe suppression layer made of a refractory metal oxide or a fluoride dielectric is provided on a light receiving surface of a photoelectric converter (the back surface of a semiconductor substrate). Thus, interference (multiple reflection interference in the semiconductor substrate) between light incident on the light receiving surface of the photoelectric converter (the back surface of the semiconductor substrate) and light reflected on the surface side of the semiconductor substrate (a surface opposite to the light receiving surface) is significantly reduced or prevented by the fringe suppression layer. Consequently, a variation in the intensity of a signal detected by the photoelectric converter due to the light interference is significantly reduced or prevented.
Patent Document 1: U.S. Patent Application Publication No. 2010/0148289
Patent Document 2: Japanese Patent Laid-Open No. 2016-58507
Patent Document 3: Japanese Translation of PCT International Application Publication No. 2013-518414
However, a method for significantly reducing or preventing interference according to Japanese Patent Laid-Open No. 2016-58507 and Japanese Translation of PCT International Application Publication No. 2013-518414 is a method for significantly reducing or preventing interference (multiple reflection interference in the semiconductor substrate) between the light reflected by the surface opposite to the light receiving surface via the semiconductor substrate and the light incident on the light receiving surface, and in the case of interference (multiple reflection interference) generated in the surface film provided on the surface of the photoelectric converter in the front surface incidence type solid-state imaging device, the effect of significantly reducing or preventing light interference cannot be obtained.
The present invention is intended to solve at least one of the above problems. The present invention aims to provide a solid-state photodetector capable of significantly reducing or preventing multiple reflection interference in a surface film that protects a light receiving surface.
In order to attain the aforementioned object, a solid-state photodetector according to an aspect of the present invention includes a plurality of photoelectric converters configured to output signals in accordance with an intensity of received light, a surface film arranged for protecting the photoelectric converters, and a functional layer provided on a surface of the surface film. The functional layer is configured to prevent either traveling directions or wave front shapes of a first wave front, a second wave front, and a third wave front from being aligned or matched with each other by preventing mutual interference between the first wave front, the second wave front, and the third wave front. The first wave front of plane waves of light is incident on the functional layer and then transmits from a light receiving surface into the photoelectric converters. The second wave front of the plane waves of the light is incident on the functional layer, then is reflected by the light receiving surface to generate no transmitting light into the photoelectric converters, then is reflected by a surface of the functional layer, and transmits into the photoelectric converters. The third wave front of the plane waves of the light is incident on the functional layer, then is reflected by a refractive index interface that is present in the functional layer and the surface film before the second wave front is generated, and then transmits into the photoelectric converters. The refractive index boundary does not necessarily indicate a material boundary, and even when there is a material boundary, it is not necessary to consider it as a refractive index boundary if the amplitude reflectance is substantially 0.002 or less.
As described above, the solid-state photodetector according to this aspect of the present invention includes the functional layer configured to prevent either the traveling directions or the wave front shapes of the wave fronts from being aligned or matched with each other. One of the wave fronts of the plane waves of the light is incident on the surface of the surface film, then is reflected by the refractive index interface that is present in the functional layer and the surface film, and then transmits into the photoelectric converters. The remainder of the wave fronts of the plane waves of the light is incident on the surface of the surface film, then enters the functional layer, and then transmits into the photoelectric converters without being reflected at the refractive index interface. Accordingly, mutual strengthening (or weakening) of the incident light and the reflected light generated in the surface film, which occurs in the surface film in the conventional configuration, i.e. interference, is significantly reduced or prevented. Consequently, it is possible to significantly reduce or prevent multiple reflection interference in the surface film that protects the light receiving surface. Thus, instability of the sensitivity can be significantly reduced or prevented.
In the aforementioned solid-state photodetector according to this aspect, the functional layer preferably has a refractive index substantially equal to a refractive index of the surface film, or the functional layer and the surface film are preferably made of a same material. According to this configuration, light reflection at the interface between the functional layer and the surface film can be significantly reduced or prevented. Consequently, multiple reflection interference in the surface film can be further significantly reduced or prevented.
In the aforementioned solid-state photodetector according to this aspect, the functional layer preferably has a lens shape. According to this configuration, due to the lens shape, in the plane waves, the traveling direction and the wave front shape of the wave front incident on the surface of the functional layer, reflected by the light receiving surface after being incident on the functional layer, and further reflected by the surface of the functional layer are not concurrently aligned or matched with the traveling direction and the wave front shape of the wave front incident on the surface of the functional layer.
In this case, the functional layer having the lens shape preferably has a function of condensing, on the light receiving surface, parallel luminous fluxes incident on the functional layer. According to this configuration, the functional layer is provided such that the photoelectric converters can receive incident light with a smaller area, a dark current generated from the photoelectric converters (photodiodes) can be reduced, and a solid-state photodetector with higher performance can be provided.
In the aforementioned solid-state photodetector in which the functional layer has the lens shape, the functional layer preferably has a shape forming a single lens. According to this configuration, the functional layer having the shape forming a single lens can be easily formed.
In the aforementioned solid-state photodetector in which the functional layer has the lens shape, the functional layer preferably has a shape forming a plurality of lenses. According to this configuration, the thickness of the functional layer can be reduced, and a thinner solid-state photodetector can be provided.
Furthermore, each of the functional layer and the photoelectric converters may have a repeated structure, and the repeated structure of the functional layer and the repeated structure of the photoelectric converters may be unaligned or unmatched with each other. According to this configuration, it is easy to form the functional layer as compared with the case in which the repeated structure of the functional layer and the repeated structure of the photoelectric converters are aligned or matched with each other.
In the aforementioned solid-state photodetector according to this aspect, the surface film and the functional layer are preferably integrally formed with each other. According to this configuration, the surface film and the functional layer can be manufactured in the same process, and thus the manufacturing process of the solid-state photodetector can be simplified.
The aforementioned solid-state photodetector according to this aspect, the functional layer is preferably preformed to prevent either the traveling directions or the wave front shapes of the first wave front, the second wave front, and the third wave front from being aligned or matched with each other by preventing mutual interference between the first wave front, the second wave front, and the third wave front. The first wave front of the plane waves of the light is incident on the functional layer and then transmits from the light receiving surface into the photoelectric converters. The second wave front of the plane waves of the light is incident on the functional layer, then is reflected by the light receiving surface to generate no transmitting light into the photoelectric converters, then is reflected by the surface of the functional layer, and transmits into the photoelectric converters. The third wave front of the plane waves of the light is incident on the functional layer, then is reflected by the refractive index interface that is present in the functional layer and the surface film before the second wave front is generated, and then transmits into the photoelectric converters. According to this configuration, multiple reflection interference can be easily significantly reduced or prevented simply by disposing the preformed functional layer on the surface film.
In this case, the solid-state photodetector may further include a bonding layer disposed between the functional layer and the surface film, the bonding layer being configured to bond, onto the surface film, the functional layer that has been preformed. According to this configuration, the preformed functional layer can be easily disposed on the surface of the surface film.
The aforementioned solid-state photodetector including the bonding layer may further include a thick film having a thickness larger than a thickness of the surface film, the thick film being disposed between the bonding layer and the surface film. According to this configuration, even when the refractive index of the functional layer and the refractive index of the surface film are significantly different from each other, multiple reflection interference can be significantly reduced or prevented.
The aforementioned solid-state photodetector including the thick film may include at least one of a bonding layer disposed between the surface film and the thick film, the bonding layer being configured to bond the surface film onto the thick film, and a bonding layer disposed between the functional layer and the thick film, the bonding layer being configured to bond the functional layer onto the thick film. According to this configuration, the surface film and the thick film (the functional layer and the thick film) can be easily bonded onto each other.
In this case, the bonding layer may be disposed both between the surface film and the thick film and between the functional layer and the thick film. According to this configuration, both the bonding of the surface film and the thick film and the bonding of the functional layer and the thick film can be easily performed.
In the aforementioned solid-state photodetector including the bonding layer, the functional layer may have a non-flat surface that faces the bonding layer disposed between the functional layer and the surface film. According to this configuration, the light receiving surface and the bonded surface of the functional layer that faces the bonding layer do not function as parallel planes, and thus the occurrence of multiple reflection interference can be significantly reduced or prevented.
According to the present invention, as described above, it is possible to significantly reduce or prevent light interference in the surface film that protects the light receiving surface.
Embodiments embodying the present invention are hereinafter described on the basis of the drawings.
The configuration of a solid-state photodetector 10 according to a first embodiment of the present invention is now described with reference to
The solid-state photo detector 10 includes a complementary metal oxide semiconductor (CMOS) sensor and a charge coupled device (CCD) sensor, both of which include photoelectric converters 11 (photodiodes), for example. In the first embodiment, the solid-state photodetector 10 is of a front surface incidence type in which light is incident from the side on which a wiring pattern 8 is provided.
As shown in
As shown in
A surface film 12 arranged for protecting the light receiving surfaces 11a is provided on the light receiving surface 11a. The surface film 12 is made of a material such as a silicon oxide, a silicon nitride, or sapphire, for example. In the surface film 12, the wiring pattern 8 is formed. The thickness d0 of the surface film 12 is substantially constant (flat).
In the first embodiment, a functional layer 13 is provided on a surface (a surface on the opposite side to the photoelectric converter 11 side) of the surface film 12. The functional layer 13 is configured to prevent either the traveling directions or the wave front shapes of a first wave front, a second wave front, and a third wave front from being aligned or matched with each other by preventing mutual interference between the first wave front, the second wave front, and the third wave front. The first wave front of plane waves of light is incident on the functional layer 13 and then transmits from the light receiving surface 11a into the photoelectric converters 11. The second wave front of the plane waves of the light is incident on the functional layer 13, then is reflected by the light receiving surface 11a to generate no transmitting light into the photoelectric converters 11, then is reflected by a surface of the functional layer 13, and transmits into the photoelectric converters 11. The third wave front of the plane waves of the light is incident on the functional layer 13, then is reflected by a refractive index interface that is present in the functional layer 13 and the surface film 12 before the second wave front is generated, and then transmits into the photoelectric converters 11. Details of the function of the functional layer 13 are described below.
In the first embodiment, the functional layer 13 has a lens shape. Specifically, the functional layer 13 has a convex lens shape that protrudes to the light incident side. The functional layer 13 having a shape including one convex lens corresponds to the plurality of photoelectric converters 11.
In the first embodiment, the refractive index of the functional layer 13 and the refractive index of the surface film 12 are substantially equal to each other. Specifically, the functional layer 13 is made of the same material (a material such as a silicon oxide, a silicon nitride, or sapphire) as that of the surface film 12. The material of the functional layer 13 and the material of the surface film 12 may be different from each other as long as the refractive indexes are substantially equal to each other.
Referring to
The functional layer 13 is formed by forming a layer (not shown), from which the functional layer 13 derives, on the surface of the surface film 12 and thereafter etching the layer from which the functional layer 13 derives, for example. Alternatively, the preformed functional layer 13 may be bonded onto the surface of the surface film 12.
The function of the functional layer 13 is now described with reference to
As shown in
The lightwave reflected at the boundary between the surface film 212 and the photoelectric converter 211 is reflected at the boundary between the air layer and the surface film 212, travels toward the photoelectric converter 211 via the surface film 212 again, and transmits into the photoelectric converter 211 (wave front W2″). All the incidence boundaries and the reflection boundaries up to this point are flat and parallel to each other, and thus the traveling directions of the wave front W1″ and the wave front W2″ are the same, and both are plane waves. Therefore, the wave front W1″ and the wave front W2″ interfere with each other (strengthen or weaken each other).
Light interference of the surface film (silicon oxide (SiO2) film) formed on a semiconductor substrate (silicon (Si) substrate) is now described with reference to
When there is light interference (multiple reflection interference), the transmittance is violently vibrated (rippled) like a vibration waveform. Therefore, the intensity of light that reaches the photoelectric converter 211 fluctuates, and thus it becomes difficult to stabilize a signal output from the photoelectric converter 211.
Referring to
As shown in
The case in which light is perpendicularly incident on the functional layer 13 is now described with reference to
The phenomenon that the curvatures of the wave fronts W1″ and W2″ are also different from each other does not relate to whether or not the focal point of the functional layer 13 is in the vicinity of the light receiving surface 11a. In order for W1″ and W2″ to have the same curvature, W1′ and W2′ need to have the same curvature. The wave front W2 reflected by the surface of the functional layer is W2′, and thus in order for the curvatures of these wave fronts to match each other, the curvature of the functional layer 13 is required to be equal to those of the wave fronts W1′ and W2′ on the surface of the functional layer 13. This condition is allowing the normal of the wave front W1′ to coincide with the center of curvature of the functional layer 13. That is, this indicates that the refraction angle in the functional layer 13 should be 0 degrees at an arbitrary point on the surface of the functional layer 13. According to Snell's law, the incident angle of the wave front W1 is also 0 degrees at the arbitrary point on the surface of the functional layer 13, which means that the surface curvature of the functional layer 13 matches the curvature of W1. That is, W1 is required not to be a plane wave, and thus the curvatures of the wave fronts W1″ and W2″ do not match each other as long as the plane wave is incident. That is, it indicates that interference does not occur.
Thus, the functional layer 13 is added such that multiple reflection interference in the surface film 12 does not occur in principle. Also in the functional layer 13, multiple reflection interference does not occur similarly. Therefore, there are no ripples of the transmittance of the surface film 12 and the functional layer 13 with respect to the wavelength of incident light that reaches the photoelectric converter 11, and the energy of light received by the photoelectric converter 11 becomes less likely to change. That is, it becomes possible to stabilize the sensitivity of the solid-state photodetector 10. In the above description, it is assumed that a plane wave incident on the surface of the functional layer 13 having a lens function due to its spherical shape is refracted on the surface of the functional layer 13 to become a spherical wave. Strictly speaking, the wave front after passing through the functional layer 13 is not perfectly spherical, but is described as a “spherical wave front” in order to simplify the explanation. Even when it is non-spherical and arbitrarily curved, similarly, the above two wave fronts W1″ and W2″ do not match each other.
According to the first embodiment of the present invention, the following advantages are obtained.
According to the first embodiment, as described above, the solid-state photodetector 10 includes the functional layer 13 configured to prevent either the traveling directions or the wave front shapes of the wave fronts from being aligned or matched with each other. One of the wave fronts of the plane waves of the light is incident on the surface of the surface film 12, then is reflected by the refractive index interface that is present in the functional layer 13 and the surface film 12, and then transmits into the photoelectric converters 11. The remainder of the wave fronts of the plane waves of the light is incident on the surface of the surface film 12, then enters the functional layer, and then transmits into the photoelectric converters 11 without being reflected at the refractive index interface. Accordingly, mutual strengthening (or weakening) of multiple reflected light that transmits into the photoelectric converters 11, which occurs in the surface film 12 in the conventional configuration is significantly reduced or prevented. Consequently, it is possible to significantly reduce or prevent multiple reflection interference in the surface film 12 that protects the light receiving surface 11a. Thus, instability of the sensitivity of the solid-state photodetector 10 can be significantly reduced or prevented.
According to the first embodiment, as described above, the functional layer 13 has a refractive index substantially equal to the refractive index of the surface film 12, or the functional layer 13 and the surface film 12 are made of the same material. Accordingly, light reflection at the interface between the functional layer 13 and the surface film 12 is significantly reduced or prevented. Consequently, multiple reflection interference in the surface film 12 can be almost completely prevented.
According to the first embodiment, as described above, the functional layer 13 has a convex lens shape. Accordingly, the functional layer 13 has a function of condensing, on the light receiving surface 11a, parallel luminous fluxes incident on the functional layer 13, and thus light can be efficiently focused into the lens center. Furthermore, due to the lens shape, in the plane waves, the traveling direction and the wave front shape of the wave front incident on the surface of the functional layer 13, reflected by the light receiving surface 11a after being incident on the functional layer 13, and further reflected by the surface of the functional layer 13 are not concurrently aligned or matched with the traveling direction and the wave front shape of the wave front incident on the surface of the functional layer 13.
According to the first embodiment, as described above, the functional layer 13 having a lens shape has a function of condensing, on the light receiving surface 11a, the parallel luminous fluxes incident on the functional layer 13. Accordingly, the functional layer 13 is provided such that the photoelectric converters 11 can receive incident light with a smaller area, a dark current generated from the photoelectric converters 11 (photodiodes) can be reduced, and a solid-state photodetector 10 with higher performance can be provided.
A second embodiment is now described with reference to
As shown in
The advantages of the second embodiment are similar to those of the first embodiment.
A third embodiment is now described with reference to
As shown in
Alternatively, as in a functional layer 93b shown in
According to the third embodiment, the following advantages are obtained.
According to the third embodiment, as described above, the functional layer 93 having a single shape is provided across the plurality of photoelectric converters 11. Accordingly, the size of the functional layer 93 is increased as compared with the case in which the functional layer 93 is formed for each photoelectric converter 11, and thus the functional layer 93 can be easily formed.
A fourth embodiment is now described with reference to
As shown in
The functional layer 103 and the surface film 12 are each made of a silicon oxide, a silicon nitride, sapphire or the like. In addition, the bonding layer 104 is made of a material that transmits light having a specific wavelength. The functional layer 103 may alternatively be bonded onto the surface of the surface film 12 by a spin-on glass (SOG) method, for example.
In bonding between the functional layer 103 and the surface film 12, the bonding layer 104 may not be used. That is, the functional layer 103 and the surface film 12 may alternatively be directly bonded onto each other by a method such as optical contact.
When the refractive index of the functional layer 103 needs to be sufficiently larger than the refractive index of the above silicon oxide, silicon nitride, sapphire, or the like in order to ensure the desired light collection performance, a material having a higher refractive index, such as alumina, may be used. In this case, the refractive index of the functional layer 103 and the refractive index of the surface film 12 are significantly different from each other, and thus multiple reflection interference occurs in the surface film 12. In this case, as in a solid-state photodetector 110 according to a modified example of the fourth embodiment shown in
When plane wave light is incident on the functional layer 103, its wave front is converted from a plane to a spherical wave. The light that propagates inside the functional layer 103 in the state of a spherical wave is refracted at an interface with the bonding layer 104. At this time, while the wave front is deformed by the interface, its radius of curvature is only changed, and it remains that the wave front is a spherical wave. This holds true for both of the following refraction and reflection.
Thereafter, as shown in
Assuming that the radius of curvature of the wave front at a point I1 (the position of a black circle point slightly advanced from an intersection of the interface between the surface film 12 and the photoelectric converters 11 and the light beam) of the wave front W1″ is R1, the radius of curvature R2 of the wave front W2″ at a point I2 is about R1-2d. The spherical wave has the property of converging to a certain point, and thus the radius of curvature of the wave front is equal to a distance to the convergence point. A distance (optical path length) traveled by the wave front W2″ is longer than that traveled by the wave front W1″, and thus the radius of curvature of the wave front W2″ becomes smaller due to the longer travel distance of the wave front W2″.
The radii of curvature of the wave fronts W1″ and W2″ are R1 and R1-2d, respectively, while the thickness d of the surface film 12 and the bonding layer 104 is on the order of μm at most and sufficiently small relative to the radius of curvature R1. Therefore, it can be regarded that R1≈R2. Furthermore, a distance W between the two wave fronts is approximately the same as d, and thus it is on approximately the same order as the target wavelength. Therefore, the wave front W1″ and the wave front W2″ having radii of curvature substantially equal to each other travel in parallel at the near distance W, and thus interference occurs (see a solid line A1 in
Also in the modified example of the fourth embodiment shown in
When the refractive index of the functional layer 103 is higher than the refractive index of the surface film 12, in order to significantly reduce or prevent multiple reflection interference in the surface film 12, a surface of the functional layer 103 in contact with the bonding layer 104 may be formed as a non-flat surface (may not be flat) (the average exhibits a plane parallel to the surface film 12, and the non-flat surface is a surface different in orientation from the average plane), as shown in
The principle that the surface of the functional layer 103 in contact with the bonding layer 104 is a non-flat surface such that multiple reflection interference is significantly reduced or prevented is based on that the surface of the functional layer 103 in contact with the bonding layer 104 and the surface of the surface film 12 in contact with the light receiving surface 11a do not become parallel planes. The refractive index of the functional layer 103 is different from the refractive index of the bonding layer 104, and thus an interface B1 between the functional layer 103 and the bonding layer 104 functions as a refractive index boundary. On the other hand, the refractive indexes of the bonding layer 104 and the surface film 12 are substantially equal to each other, and thus an interface B2 between the bonding layer 104 and the surface film 12 does not function as a refractive index boundary. Therefore, multiple reflection interference does not occur between the surface of the surface film 12 in contact with the light receiving surface 11a and the interface B2 between the bonding layer 104 and the surface film 12.
According to the fourth embodiment, the following advantages are obtained.
According to the fourth embodiment, as described above, the functional layer 103 is preformed to prevent the traveling directions and the wave front shapes of the wave front of the plane waves of the incident light, the wave front being incident on the surface of the functional layer 103, being reflected by the light receiving surface 11a after being incident on the functional layer 103, and further being reflected by the surface of the functional layer 103, and the wave front of the plane waves of the incident light, the wave front being incident on the surface of the functional layer 103, from being concurrently aligned or matched with each other. Accordingly, the conventional solid-state photodetector in which multiple reflection interference occurs can be configured as the solid-state photodetector 100 in which multiple reflection interference is significantly reduced or prevented simply by disposing the preformed functional layer 103 on the surface of the surface film 12.
According to the modified example of the fourth embodiment, as described above, the thick film 105 is disposed between the functional layer 103 and the surface film 12. Alternatively, the bonding layer 104 is disposed between the functional layer 103 and the surface film 12, and the surface of the functional layer 103 in contact with the bonding layer 104 is a non-flat surface. Accordingly, due to the functional layer 103, a material having a high refractive index can be used, and the light collection characteristics of the functional layer 103 can be improved while multiple reflection interference in the surface film 12 is significantly reduced or prevented.
The embodiments disclosed this time must be considered as illustrative in all points and not restrictive. The scope of the present invention is not shown by the above description of the embodiments but by the scope of claims for patent, and all modifications (modified examples) within the meaning and scope equivalent to the scope of claims for patent are further included.
For example, while the example in which the functional layer according to the present invention is applied to the front surface incidence type solid-state photodetector has been shown in each of the aforementioned first to fourth embodiments, the present invention is not limited to this. For example, the functional layer (the functional layer 13, for example) according to the present invention may be provided in a back surface incidence type solid-state photodetector in which light is incident from the side opposite to the side on which a wiring pattern is provided. In this example, the functional layer is provided on the back surface (light incident surface).
While the example in which the refractive index of the functional layer and the refractive index of the surface film are substantially equal to each other has been shown in each of the aforementioned first to third embodiments and part of the aforementioned fourth embodiment, the present invention is not limited to this. For example, the refractive index of the functional layer and the refractive index of the surface film may be different from each other to some extent.
While the examples in which the functional layer has a convex lens shape and a cylindrical lens shape have respectively been shown in the aforementioned first and second embodiments, the present invention is not limited to this. For example, as in a functional layer 133 of a solid-state photodetector 130 shown in a first modified example of
While the example in which the functional layer and the surface film are provided separately from each other has been shown in each of the aforementioned first to third embodiments, the present invention is not limited to this. For example, as in a solid-state photodetector 150 according to a second modified example of
While the examples in which the functional layer is formed by etching and cutting-out have respectively been shown in the aforementioned first and second embodiments, the present invention is not limited to this. For example, the functional layer may be formed by polishing, vapor deposition, crystal growth, lithography, thermoforming, or the like.
104: bonding layer
Filing Document | Filing Date | Country | Kind |
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PCT/JP2017/006367 | 2/21/2017 | WO | 00 |