Span mask generation

TECHNICAL FIELD

The present disclosure relates generally to semiconductor memory apparatuses and methods, and more particularly, to apparatuses and methods related to span mask generation.

BACKGROUND

Memory devices are typically provided as internal, semiconductor, integrated circuits in computers or other electronic systems. There are many different types of memory including volatile and non-volatile memory. Volatile memory can require power to maintain its data (e.g., host data, error data, etc.) and includes random access memory (RAM), dynamic random access memory (DRAM), static random access memory (SRAM), synchronous dynamic random access memory (SDRAM), and thyristor random access memory (TRAM), among others. Non-volatile memory can provide persistent data by retaining stored data when not powered and can include NAND flash memory, NOR flash memory, and resistance variable memory such as phase change random access memory (PCRAM), resistive random access memory (RRAM), and magnetoresistive random access memory (MRAM), such as spin torque transfer random access memory (STT RAM), among others.

Electronic systems often include a number of processing resources (e.g., one or more processors), which may retrieve and execute instructions and store the results of the executed instructions to a suitable location. A processor can comprise a number of functional units (e.g., herein referred to as functional unit circuitry such as arithmetic logic unit (ALU) circuitry, floating point unit (FPU) circuitry, and/or a combinatorial logic block, for example, which can execute instructions to perform logical operations such as AND, OR, NOT, NAND, NOR, and XOR logical operations on data (e.g., one or more operands).

A number of components in an electronic system may be involved in providing instructions to the functional unit circuitry for execution. The instructions may be generated, for instance, by a processing resource such as a controller and/or host processor. Data (e.g., the operands on which the instructions will be executed to perform the logical operations) may be stored in a memory array that is accessible by the functional unit circuitry. The instructions and/or data may be retrieved from the memory array and sequenced and/or buffered before the functional unit circuitry begins to execute instructions on the data. Furthermore, as different types of operations may be executed in one or multiple clock cycles through the functional unit circuitry, intermediate results of the operations and/or data may also be sequenced and/or buffered. A sequence to complete an operation in one or more clock cycles may be referred to as an operation cycle. Time consumed to complete an operation cycle costs in terms of processing and computing performance and power consumption, of a computing apparatus and/or system.

In many instances, the processing resources (e.g., processor and/or associated functional unit circuitry) may be external to the memory array, and data is accessed via a bus between the processing resources and the memory array to execute instructions. Data can be moved from the memory array to registers external to the memory array via a bus.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram of an apparatus in the form of a computing system including a memory device in accordance with a number of embodiments of the present disclosure.

FIG. 2A illustrates a schematic diagram of a portion of a memory array in accordance with a number of embodiments of the present disclosure.

FIG. 2B is a schematic diagram illustrating a portion of sensing circuitry in accordance with a number of embodiments of the present disclosure.

FIG. 3 illustrates a schematic diagram of a portion of a memory array in accordance with a number of embodiments of the present disclosure.

FIG. 4 illustrates a table showing the states of memory cells of an array during span mask generation in accordance with a number of embodiments of the present disclosure.

FIGS. 5A-5D illustrate timing diagrams associated with performing a number of logical operations using sensing circuitry in accordance with a number of embodiments of the present disclosure.

FIGS. 6A-6B illustrate timing diagrams associated with performing a number of logical operations using sensing circuitry in accordance with a number of embodiments of the present disclosure.

DETAILED DESCRIPTION

The present disclosure includes apparatuses and methods related to span mask generation. An example method comprises creating, using sensing circuitry, a number of bit vectors, wherein each of the number of bit vectors includes a repeating pattern based on a size of the number of bit vectors and a particular mask depth. As used herein, the term “bit vector” is intended to mean a physically contiguous number of bits in memory, whether physically contiguous in rows (e.g., horizontally oriented) or columns (e.g., vertically oriented) in an array of memory cells. A bit vector can include a number elements that are each comprised of portions of the number of bits in the bit vector. Span mask generation can be performed in memory. As used herein a “span mask” is intended to mean a mask that is used to hide or reveal a number of bits in a bit vector, or a number of bits in an element of a bit vector, during a logical operation on the bit vector. For example, span masks can be generated based on the number of bits in the bit vector and the number of bits in the elements of the bit vector. Span masks can include repeating patterns of bits and the span masks can be used during operations (e.g., logical operations) performed in memory on other bit vectors. Span masks can include repeating patterns with bit patterns that includes 2ⁱbits, where i indicates which iteration of a span mask generation algorithm is being performed. In various embodiments, the repeating pattern can include a number of bits up to a selected number, e.g., half, of the number of bits in each element.

A number of embodiments of the present disclosure can provide a reduction of the number of computations and/or time involved in generating span masks relative to previous approaches. For instance, the number of computations and/or the time to generate span masks can be reduced by performing operations in memory in parallel (e.g., simultaneously). Generating span masks as described herein can also reduce power consumption as compared to previous approaches. In accordance with a number of embodiments, generating span masks can be performed on elements (e.g., data in the form of bit vectors) without transferring data out of the memory array and/or sensing circuitry via a bus (e.g., data bus, address bus, control bus, etc.). Span mask generation can involve performing a number of operations (e.g., AND operations, OR operations, shift operations, invert operations, and, etc.). The generated span masks can be used in subsequent operations and can provide a reduction of the number of computations and/or time involved in performing the subsequent operations. However, embodiments are not limited to these examples.

In various previous approaches, bit vectors may be transferred from the array and sensing circuitry to a number of registers via a bus comprising input/output (I/O) lines. The number of registers can be used by a processing resource such as a processor, microprocessor, and/or compute engine, which may comprise ALU circuitry and/or other functional unit circuitry configured to perform the appropriate logical operations. However, often only a single function can be performed by the ALU circuitry, and transferring data to/from memory from/to registers via a bus can involve significant power consumption and time requirements. Even if the processing resource is located on a same chip as the memory array, significant power can be consumed in moving data out of the array to the compute circuitry (e.g., ALU), which can involve performing a sense line address access (e.g., firing of a column decode signal) in order to transfer data from sense lines onto I/O lines, moving the data to the array periphery, and providing the data to a register in association with generating span masks, for instance.

In the following detailed description of the present disclosure, reference is made to the accompanying drawings that form a part hereof, and in which is shown by way of illustration how one or more embodiments of the disclosure may be practiced. These embodiments are described in sufficient detail to enable those of ordinary skill in the art to practice the embodiments of this disclosure, and it is to be understood that other embodiments may be utilized and that process, electrical, and/or structural changes may be made without departing from the scope of the present disclosure. As used herein, the designators “S,” “T,” “U,” “V,” “W,” etc., particularly with respect to reference numerals in the drawings, indicates that a number of the particular feature so designated can be included. As used herein, “a number of” a particular thing can refer to one or more of such things (e.g., a number of memory arrays can refer to one or more memory arrays).

The figures herein follow a numbering convention in which the first digit or digits correspond to the drawing figure number and the remaining digits identify an element or component in the drawing. Similar elements or components between different figures may be identified by the use of similar digits. For example, 231 may reference element “31” in FIG. 2, and a similar element may be referenced as 331 in FIG. 3. As will be appreciated, elements shown in the various embodiments herein can be added, exchanged, and/or eliminated so as to provide a number of additional embodiments of the present disclosure. In addition, as will be appreciated, the proportion and the relative scale of the elements provided in the figures are intended to illustrate certain embodiments of the present invention, and should not be taken in a limiting sense

FIG. 1 is a block diagram of an apparatus in the form of a computing system 100 including a memory device 120 in accordance with a number of embodiments of the present disclosure. As used herein, a memory device 120, a memory array 130, controller 140, and/or sensing circuitry 150 might also be separately considered an “apparatus.”

System 100 includes a host 110 coupled to memory device 120, which includes a memory array 130. Host 110 can be a host system such as a personal laptop computer, a desktop computer, a digital camera, a mobile telephone, or a memory card reader, among various other types of hosts. Host 110 can include a system motherboard and/or backplane and can include a number of processing resources (e.g., one or more processors, microprocessors, or some other type of controlling circuitry). The system 100 can include separate integrated circuits or both the host 110 and the memory device 120 can be on the same integrated circuit. The system 100 can be, for instance, a server system and/or a high performance computing (HPC) system and/or a portion thereof. Although the example shown in FIG. 1 illustrates a system having a Von Neumann architecture, embodiments of the present disclosure can be implemented in non-Von Neumann architectures (e.g., a Turing machine), which may not include one or more components (e.g., CPU, ALU, etc.) often associated with a Von Neumann architecture.

For clarity, the system 100 has been simplified to focus on features with particular relevance to the present disclosure. The memory array 130 can be a DRAM array, SRAM array, STT RAM array, PCRAM array, TRAM array, RRAM array, NAND flash array, and/or NOR flash array, for instance. The array 130 can comprise memory cells arranged in rows coupled by access lines (which may be referred to herein as word lines or select lines) and columns coupled by sense lines (which may be referred to herein as digit lines or data lines). Although a single array 130 is shown in FIG. 1, embodiments are not so limited. For instance, memory device 120 may include a number of arrays 130 (e.g., a number of banks of DRAM cells). An example DRAM array is described in association with FIGS. 2 and 3.

The memory device 120 includes address circuitry 142 to latch address signals provided over an I/O bus 156 (e.g., a data bus) through I/O circuitry 144. Address signals are received and decoded by a row decoder 146 and a column decoder 152 to access the memory array 130. Data can be read from memory array 130 by sensing voltage and/or current changes on the sense lines using sensing circuitry 150. The sensing circuitry 150 can read and latch a page (e.g., row) of data from the memory array 130. The I/O circuitry 144 can be used for bi-directional data communication with host 110 over the I/O bus 156. The write circuitry 148 is used to write data to the memory array 130.

Controller 140 decodes signals provided by control bus 154 from the host 110. These signals can include chip enable signals, write enable signals, and address latch signals that are used to control operations performed on the memory array 130, including data read, data write, and data erase operations. In various embodiments, the control circuitry 140 is responsible for executing instructions from the host 110. The controller 140 can be a state machine, a sequencer, or some other type of controller.

An example of the sensing circuitry 150 is described further below in association with FIGS. 2A and 2B. For instance, in a number of embodiments, the sensing circuitry 150 can comprise a number of sense amplifiers and a number of compute components, which may comprise a latch serving as a Comp_Compulator and can be used to perform logical operations (e.g., on data associated with complementary sense lines). In a number of embodiments, the sensing circuitry (e.g., 150) can be used to generate span masks using data stored in array 130 as inputs and store the results of the bit vector population count determination back to the array 130 without transferring via a sense line address access (e.g., without firing a column decode signal). As such, span mask generation can be performed using sensing circuitry 150 rather than and/or in addition to being performed by processing resources external to the sensing circuitry 150 (e.g., by a processor associated with host 110 and/or other processing circuitry, such as ALU circuitry, located on device 120 (e.g., on controller 140 or elsewhere)).

In various previous approaches, data would be read from memory via sensing circuitry and provided to an external ALU (e.g., via a bus). The external ALU circuitry would be used to perform span mask generation using the elements (which may be referred to as operands or inputs) and the result could be transferred back to the array via the local I/O lines. In contrast, in a number of embodiments of the present disclosure, sensing circuitry (e.g., 150) is configured to generate span masks using data stored in memory cells in memory array 130 and store the result back to the array 130 without enabling a local I/O line coupled to the sensing circuitry.

As such, in a number of embodiments, registers and/or an ALU external to array 130 and sensing circuitry 150 may not be needed to perform the span mask generation as the sensing circuitry 150 can be operated to perform the appropriate operations involved in generating span masks using the address space of memory array 130. Additionally, generating span masks can be performed without the use of an external processing resource.

FIG. 2A illustrates a schematic diagram of a portion of a memory array 230 in accordance with a number of embodiments of the present disclosure. A memory cell comprises a storage element (e.g., capacitor) and an access device (e.g., transistor). For instance, memory cell 201-1 comprises transistor 202-1 and capacitor 203-1, memory cell 201-2 comprises transistor 202-2 and capacitor 203-2, memory cell 201-3 comprises transistor 202-3 and capacitor 203-3, and memory cell 201-4 comprises transistor 202-4 and capacitor 203-4, etc. In this example, the memory array 230 is a DRAM array of 1T1C (one transistor one capacitor) memory cells. In a number of embodiments, the memory cells may be destructive read memory cells (e.g., reading the data stored in the cell destroys the data such that the data originally stored in the cell is refreshed after being read). The cells of the memory array 230 are arranged in rows coupled by word lines 204-X (Row X), 204-Y (Row Y), etc., and columns coupled by pairs of complementary data lines DIGIT(n−1)/DIGIT(n−1)_, DIGIT(n)/DIGIT(n)_, DIGIT(n+1)/DIGIT(n+1)_. The individual data lines corresponding to each pair of complementary data lines can also be referred to as data lines 205-1 (D) and 205-2 (D_) respectively. Although only three pair of complementary data lines are shown in FIG. 2A, embodiments of the present disclosure are not so limited, and an array of memory cells can include additional columns of memory cells and/or data lines (e.g., 4,096, 8,192, 16,384, etc.).

Memory cells can be coupled to different data lines and/or word lines. For example, a first source/drain region of a transistor 202-3 can be coupled to data line 205-1 (D), a second source/drain region of transistor 202-3 can be coupled to capacitor 203-3, and a gate of a transistor 202-3 can be coupled to word line 204-Y. A first source/drain region of a transistor 202-4 can be coupled to data line 205-2 (D_), a second source/drain region of transistor 202-4 can be coupled to capacitor 203-4, and a gate of a transistor 202-4 can be coupled to word line 204-X. The cell plate, as shown in FIG. 2A, can be coupled to each of capacitors 203-3 and 203-4. The cell plate can be a common node to which a reference voltage (e.g., ground) can be applied in various memory array configurations.

The memory array 230 is coupled to sensing circuitry 250-1, 250-2, 250-3, etc., in accordance with a number of embodiments of the present disclosure. Sensing circuitry comprises a sense amplifier and a compute component corresponding to respective columns of memory cells (e.g., coupled to respective pairs of complementary data lines). In this example, the sensing circuitry 250-1 comprises a sense amplifier 206-1 and a compute component 231-1 corresponding to respective columns of memory cells (e.g., memory cells 201-1 and 201-2 coupled to respective pairs of complementary data lines). Sensing circuitry 250-2 comprises a sense amplifier 206-2 and a compute component 231-2 corresponding to respective columns of memory cells (e.g., memory cells 201-3 and 201-4 coupled to respective pairs of complementary data lines). Sensing circuitry 250-3 comprises a sense amplifier 206-3 and a compute component 231-3 corresponding to respective columns of memory cells (e.g., memory cells 201-5 and 201-6 coupled to respective pairs of complementary data lines). A sense amplifier (e.g., sense amplifier 206-1) can comprise a cross coupled latch, which can be referred to herein as a primary latch. The sense amplifier (e.g., sense amplifier 206-1) can be configured, for example, as described with respect to FIG. 2B.

In the example illustrated in FIG. 2A, the circuitry corresponding to compute component 231-2 comprises a static latch 264 and an additional ten transistors that implement, among other things, a dynamic latch. For ease of reference, compute component 231-2 has been illustrated in an expanded format to describe the functioning of the compute component. Additional compute components (e.g., compute components 231-1 and 231-3) include elements of the expanded format of compute component 231-2 but are not illustrated in FIG. 2A. The dynamic latch and/or static latch of the compute component 231-2 can be collectively referred to herein as a secondary latch, which can serve as an accumulator. As such, the compute component 231-2 can operate as and/or be referred to herein as an accumulator. The compute component 231-2 can be coupled to each of the data lines D 205-1 and D_205-2 as shown in FIG. 2A. However, embodiments are not limited to this example. The transistors of compute component 231-2 can all be n-channel transistors (e.g., NMOS transistors), for example.

In this example, data line D 205-1 can be coupled to a first source/drain region of transistors 216-1 and 239-1, as well as to a first source/drain region of load/pass transistor 218-1. Data line D_205-2 can be coupled to a first source/drain region of transistors 216-2 and 239-2, as well as to a first source/drain region of load/pass transistor 218-2.

The gates of load/pass transistor 218-1 and 218-2 can be commonly coupled to a LOAD control signal, or respectively coupled to a PASSD/PASSDB control signal, as discussed further below. A second source/drain region of load/pass transistor 218-1 can be directly coupled to the gates of transistors 216-1 and 239-2. A second source/drain region of load/pass transistor 218-2 can be directly coupled to the gates of transistors 216-2 and 239-1.

A second source/drain region of transistor 216-1 can be directly coupled to a first source/drain region of pull-down transistor 214-1. A second source/drain region of transistor 239-1 can be directly coupled to a first source/drain region of pull-down transistor 207-1. A second source/drain region of transistor 216-2 can be directly coupled to a first source/drain region of pull-down transistor 214-2. A second source/drain region of transistor 239-2 can be directly coupled to a first source/drain region of pull-down transistor 207-2. A second source/drain region of each of pull-down transistors 207-1, 207-2, 214-1, and 214-2 can be commonly coupled together to a reference voltage (e.g., ground (GND)). A gate of pull-down transistor 207-1 can be coupled to an AND control signal line, a gate of pull-down transistor 214-1 can be coupled to an ANDinv control signal line 213-1, a gate of pull-down transistor 214-2 can be coupled to an ORinv control signal line 213-2, and a gate of pull-down transistor 207-2 can be coupled to an OR control signal line.

The gate of transistor 239-1 can be referred to as node S1, and the gate of transistor 239-2 can be referred to as node S2. The circuit shown in FIG. 2A stores accumulator data dynamically on nodes S1 and S2. Activating the LOAD control signal causes load/pass transistors 218-1 and 218-2 to conduct, and thereby load complementary data onto nodes S1 and S2. The LOAD control signal can be elevated to a voltage greater than V_DDto pass a full V_DDlevel to S1/S2. However, elevating the LOAD control signal to a voltage greater than V_DDis optional, and functionality of the circuit shown in FIG. 2A is not contingent on the LOAD control signal being elevated to a voltage greater than V_DD.

The configuration of compute component 231-2 shown in FIG. 2A has the benefit of balancing the sense amplifier for functionality when the pull-down transistors 207-1, 207-2, 214-1, and 214-2 are conducting before the sense amplifier 206-2 is fired (e.g., during pre-seeding of the sense amplifier 206-2). As used herein, firing the sense amplifier 206-2 refers to enabling the sense amplifier 206-2 to set the primary latch and subsequently disabling the sense amplifier 206-2 to retain the set primary latch. Performing logical operations after equilibration is disabled (in the sense amp), but before the sense amplifier fires, can save power usage because the latch of the sense amplifier does not have to be “flipped” using full rail voltages (e.g., V_DD, GND).

Inverting transistors can pull-down a respective data line in performing certain logical operations. For example, transistor 216-1 (having a gate coupled to S2 of the dynamic latch) in series with transistor 214-1 (having a gate coupled to an ANDinv control signal line 213-1) can be operated to pull-down data line 205-1 (D), and transistor 216-2 (having a gate coupled to S1 of the dynamic latch) in series with transistor 214-2 (having a gate coupled to an ANDinv control signal line 213-2) can be operated to pull-down data line 205-2 (D_).

The latch 264 can be controllably enabled by coupling to an active negative control signal line 212-1 (COMP_COMPB) and an active positive control signal line 212-2 (COMP_COMP) rather than be configured to be continuously enabled by coupling to ground and V_DD. In various embodiments, load/pass transistors 208-1 and 208-2 can each having a gate coupled to one of a LOAD control signal or a PASSD/PASSDB control signal.

According to some embodiments, the gates of load/pass transistors 218-1 and 218-2 can be commonly coupled to a LOAD control signal. In the configuration where the gates of load/pass transistors 218-1 and 218-2 are commonly coupled to the LOAD control signal, transistors 218-1 and 218-2 can be load transistors. Activating the LOAD control signal causes the load transistors to conduct, and thereby load complementary data onto nodes S1 and S2. The LOAD control signal can be elevated to a voltage greater than V_DDto pass a full V_DDlevel to S1/S2. However, the LOAD control signal need not be elevated to a voltage greater than V_DDis optional, and functionality of the circuit shown in FIG. 2A is not contingent on the LOAD control signal being elevated to a voltage greater than V_DD.

According to some embodiments, the gate of load/pass transistor 218-1 can be coupled to a PASSD control signal, and the gate of load/pass transistor 218-2 can be coupled to a PASSDB control signal. In the configuration where the gates of transistors 218-1 and 218-2 are respectively coupled to one of the PASSD and PASSDB control signals, transistors 218-1 and 218-2 can be pass transistors. Pass transistors can be operated differently (e.g., at different times and/or under different voltage/current conditions) than load transistors. As such, the configuration of pass transistors can be different than the configuration of load transistors.

Load transistors are constructed to handle loading associated with coupling data lines to the local dynamic nodes S1 and S2, for example. Pass transistors are constructed to handle heavier loading associated with coupling data lines to an adjacent Comp Compulator (e.g., through the shift circuitry 223-2 in memory array 230, as shown in FIG. 2A). According to some embodiments, load/pass transistors 218-1 and 218-2 can be configured to accommodate the heavier loading corresponding to a pass transistor but be coupled and operated as a load transistor. Load/pass transistors 218-1 and 218-2 configured as pass transistors can also be utilized as load transistors. However, load/pass transistors 218-1 and 218-2 configured as load transistors may not be capable of being utilized as pass transistors.

In a number of embodiments, the compute component 231-2, including the latch 264, can comprise a number of transistors formed on pitch with the transistors of the corresponding memory cells of an array (e.g., array 230 shown in FIG. 2A) to which they are coupled, which may conform to a particular feature size (e.g., 4F², 6F², etc.). According to various embodiments, latch 264 includes four transistors 208-1, 208-2, 209-1, and 209-2 coupled to a pair of complementary data lines D 205-1 and D_205-2 through load/pass transistors 218-1 and 218-2. However, embodiments are not limited to this configuration. The latch 264 can be a cross coupled latch (e.g., gates of a pair of transistors, such as n-channel transistors (e.g., NMOS transistors) 209-1 and 209-2 are cross coupled with the gates of another pair of transistors, such as p-channel transistors (e.g., PMOS transistors) 208-1 and 208-2). As described further herein, the cross coupled latch 264 can be referred to as a static latch.

The voltages or currents on the respective data lines D and D_ can be provided to the respective latch inputs 217-1 and 217-2 of the cross coupled latch 264 (e.g., the input of the secondary latch). In this example, the latch input 217-1 is coupled to a first source/drain region of transistors 208-1 and 209-1 as well as to the gates of transistors 208-2 and 209-2. Similarly, the latch input 217-2 can be coupled to a first source/drain region of transistors 208-2 and 209-2 as well as to the gates of transistors 208-1 and 209-1.

In this example, a second source/drain region of transistor 209-1 and 209-2 is commonly coupled to a negative control signal line 1312-1 (e.g., ground (GND) or COMP_COMPB control signal similar to control signal RnIF shown in FIG. 2B with respect to the primary latch). A second source/drain region of transistors 208-1 and 208-2 is commonly coupled to a positive control signal line 212-2 (e.g., V_DDor COMP_COMP control signal similar to control signal ACT shown in FIG. 2B with respect to the primary latch). The positive control signal 212-2 can provide a supply voltage (e.g., V_DD) and the negative control signal 212-1 can be a reference voltage (e.g., ground) to enable the cross coupled latch 264. According to some embodiments, the second source/drain region of transistors 208-1 and 208-2 are commonly coupled directly to the supply voltage (e.g., V_DD), and the second source/drain region of transistor 209-1 and 209-2 are commonly coupled directly to the reference voltage (e.g., ground) so as to continuously enable latch 264.

The enabled cross coupled latch 264 operates to amplify a differential voltage between latch input 217-1 (e.g., first common node) and latch input 217-2 (e.g., second common node) such that latch input 217-1 is driven to either the activated positive control signal voltage (e.g., V_DD) or the activated negative control signal voltage (e.g., ground), and latch input 217-2 is driven to the other of the activated positive control signal voltage (e.g., V_DD) or the activated negative control signal voltage (e.g., ground).

As shown in FIG. 2A, the sense amplifier 206-2 and the compute component 231-2 can be coupled to the array 230 via shift circuitry 223-2. In this example, the shift circuitry 223-2 comprises a pair of isolation devices (e.g., isolation transistors 221-1 and 221-2) coupled to data lines 205-1 (D) and 205-2 (D_), respectively). The isolation transistors 221-1 and 221-2 are coupled to a control signal 222 (NORM) that, when activated, enables (e.g., turns on) the isolation transistors 221-1 and 221-2 to couple the corresponding sense amplifier 206-2 and compute component 231-2 to a corresponding column of memory cells (e.g., to a corresponding pair of complementary data lines 205-1 (D) and 205-2 (D_)). According to various embodiments, conduction of isolation transistors 221-1 and 221-2 can be referred to as a “normal” configuration of the shift circuitry 223-2.

In the example illustrated in FIG. 2A, the shift circuitry 223-2 includes another (e.g., a second) pair of isolation devices (e.g., isolation transistors 221-3 and 221-4) coupled to a complementary control signal 219 (SHIFT), which can be activated, for example, when NORM is deactivated. The isolation transistors 221-3 and 221-4 can be operated (e.g., via control signal 219) such that a particular sense amplifier 206-2 and compute component 231-2 are coupled to a different pair of complementary data lines (e.g., a pair of complementary data lines different than the pair of complementary data lines to which isolation transistors 221-1 and 221-2 couple the particular sense amplifier 206-2 and compute component 231-2), or can couple a particular sense amplifier 206-2 and compute component 231-2 to another memory array (and isolate the particular sense amplifier 206-2 and compute component 231-2 from a first memory array). According to various embodiments, the shift circuitry 223-2 can be considered to be a portion of (e.g., within) the sensing circuitry 250-2, for instance.

Although the shift circuitry 223-2 shown in FIG. 2A includes isolation transistors 221-1 and 221-2 used to couple particular sensing circuitry 250-2 (e.g., a particular sense amplifier 206-2 and corresponding compute component 231-2) to a particular pair of complementary data lines 205-1 (D) and 205-2 (D_) (e.g., DIGIT(n) and DIGIT(n)_) and isolation transistors 221-3 and 221-4 are arranged to couple the particular sensing circuitry 250-2 to an adjacent pair of complementary data lines in one particular direction (e.g., adjacent data lines DIGIT(n+1) and DIGIT(n+1)_ shown to the right in FIG. 2A), embodiments of the present disclosure are not so limited. For instance, shift circuitry can include isolation transistors 221-1 and 221-2 used to couple particular sensing circuitry to a particular pair of complementary data lines (e.g., DIGIT(n) and DIGIT(n) and isolation transistors 221-3 and 221-4 arranged so as to be used to couple the particular sensing circuitry to an adjacent pair of complementary data lines in another particular direction (e.g., adjacent data lines DIGIT(n−1) and DIGIT(n−1)_ shown to the left in FIG. 2A). Shift circuitry 223-1 can include isolation transistors used to couple particular sensing circuitry 250-1 to a particular pair of complementary data lines (e.g., DIGIT(n−1) and DIGIT(n−1)_) and isolation transistors arranged to couple the particular sensing circuitry 250-1 to an adjacent pair of complementary data lines in one particular direction (e.g., adjacent data lines DIGIT(n) and DIGIT(n) shown in FIG. 2A). Shift circuitry 223-3 can include isolation transistors used to couple particular 250-3 to a particular pair of complementary data lines (e.g., DIGIT(n+1) and DIGIT(n+1)_) and isolation transistors arranged to couple the particular sensing circuitry 250-3 to an adjacent pair of complementary data lines in one particular direction (e.g., adjacent data lines DIGIT (n) and DIGIT(n) to the left and DIGIT(n+2) and DIGIT(n+2) to the right (not shown)).

Embodiments of the present disclosure are not limited to the configuration of shift circuitry 223-2 shown in FIG. 2A. For example, determining whether to shift in a particular direction to perform a shift operation is independent of the circuitry implementation. In a number of embodiments, shift circuitry 223-2 such as that shown in FIG. 2A can be operated (e.g., in conjunction with sense amplifiers 206-2 and compute components 231-2) in association with performing mathematical operations such as adding and subtracting operations without transferring data out of the sensing circuitry 250 via an I/O line (e.g., local I/O line (IO/IO_)), for instance.

Although not shown in FIG. 2A, each column of memory cells can be coupled to a column decode line that can be activated to transfer, via local I/O line, a data value from a corresponding sense amplifier 206-2 and/or compute component 231-2 to a control component external to the array such as an external processing resource (e.g., host processor and/or other functional unit circuitry). The column decode line can be coupled to a column decoder (e.g., column decoder). However, as described herein, in a number of embodiments, data need not be transferred via such I/O lines to perform logical operations in accordance with embodiments of the present disclosure. In a number of embodiments, shift circuitry 223-2 can be operated in conjunction with sense amplifiers 206-2 and compute components 231-2 to perform without transferring data to a control component external to the array, for instance.

FIG. 2B is a schematic diagram illustrating a portion of sensing circuitry in accordance with a number of embodiments of the present disclosure. According to various embodiments, sense amplifier 206 can comprise a cross coupled latch. However, embodiments of the sense amplifier 206 are not limited to a cross coupled latch. As an example, the sense amplifier 206 in FIG. 2B can be current-mode sense amplifier and/or single-ended sense amplifier (e.g., sense amplifier coupled to one data line). Also, embodiments of the present disclosure are not limited to a folded data line architecture.

In a number of embodiments, a sense amplifier (e.g., 206) can comprise a number of transistors formed on pitch with the transistors of the corresponding compute component 231-2 and/or the memory cells of an array (e.g., 230 shown in FIG. 2A) to which they are coupled, which may conform to a particular feature size (e.g., 4F², 6F², etc.). The sense amplifier 206 comprises a latch 215 including four transistors coupled to a pair of complementary data lines D 205-1 and D_205-2. The latch 215 can be a cross coupled latch (e.g., gates of a pair of transistors, such as n-channel transistors (e.g., NMOS transistors) 227-1 and 227-2 are cross coupled with the gates of another pair of transistors, such as p-channel transistors (e.g., PMOS transistors) 229-1 and 229-2). As described further herein, the latch 215 comprising transistors 227-1, 227-2, 229-1, and 229-2 can be referred to as a primary latch. However, embodiments are not limited to this example.

The voltages or currents on the respective data lines D and D_ can be provided to the respective latch inputs 233-1 and 233-2 of the cross coupled latch 215 (e.g., the input of the secondary latch). In this example, the latch input 233-1 is coupled to a first source/drain region of transistors 227-1 and 229-1 as well as to the gates of transistors 227-2 and 229-2. Similarly, the latch input 233-2 can be coupled to a first source/drain region of transistors 227-2 and 229-2 as well as to the gates of transistors 227-1 and 229-1. The compute component 231-2, which may be referred to herein as an Comp_Compulator, can be coupled to latch inputs 233-1 and 233-2 of the cross coupled latch 215 as shown; however, embodiments are not limited to the example shown in FIG. 2B.

In this example, a second source/drain region of transistor 227-1 and 227-2 is commonly coupled to an active negative control signal 228 (RnIF). A second source/drain region of transistors 229-1 and 229-2 is commonly coupled to an active positive control signal 290 (ACT). The ACT signal 290 can be a supply voltage (e.g., VDD) and the RnIF signal can be a reference voltage (e.g., ground). Activating signals 228 and 290 enables the cross coupled latch 215.

The enabled cross coupled latch 215 operates to amplify a differential voltage between latch input 233-1 (e.g., first common node) and latch input 233-2 (e.g., second common node) such that latch input 233-1 is driven to one of the ACT signal voltage and the RnIF signal voltage (e.g., to one of V_DDand ground), and latch input 233-2 is driven to the other of the ACT signal voltage and the RnIF signal voltage.

The sense amplifier 206 can also include circuitry configured to equilibrate the data lines D and D_ (e.g., in association with preparing the sense amplifier for a sensing operation). In this example, the equilibration circuitry comprises a transistor 224 having a first source/drain region coupled to a first source/drain region of transistor 225-1 and data line D 205-1. A second source/drain region of transistor 224 can be coupled to a first source/drain region of transistor 225-2 and data line D_ 205-2. A gate of transistor 224 can be coupled to gates of transistors 225-1 and 225-2.

The second source drain regions of transistors 225-1 and 225-2 are coupled to an equilibration voltage 238 (e.g., V_DD/2), which can be equal to V_DD/2, where V_DDis a supply voltage associated with the array. The gates of transistors 224, 225-1, and 225-2 can be coupled to control signal 225 (EQ). As such, activating EQ enables the transistors 224, 225-1, and 225-2, which effectively shorts data line D to data line D_ such that the data lines D and D_ are equilibrated to equilibration voltage V_DD/2. According to a number of embodiments of the present disclosure, a number of logical operations can be performed using the sense amplifier 206 and compute component 231-2, and the result can be stored in the sense amplifier and/or compute component.

The sensing circuitry 250 can be operated in several modes to perform logical operations, including a first mode in which a result of the logical operation is initially stored in the sense amplifier 206, and a second mode in which a result of the logical operation is initially stored in the compute component 231-2. Additionally with respect to the first operating mode, sensing circuitry 250 can be operated in both pre-sensing (e.g., sense amps fired before logical operation control signal active) and post-sensing (e.g., sense amps fired after logical operation control signal active) modes with a result of a logical operation being initially stored in the sense amplifier 206.

As described further below, the sense amplifier 206 can, in conjunction with the compute component 231-2, be operated to perform various logical operations using data from an array as input. In a number of embodiments, the result of a logical operation can be stored back to the array without transferring the data via a data line address access (e.g., without firing a column decode signal such that data is transferred to circuitry external from the array and sensing circuitry via local I/O lines). As such, a number of embodiments of the present disclosure can enable performing various operations (e.g., logical operations, mathematical operations, etc.) using less power than various previous approaches. Additionally, since a number of embodiments eliminate the need to transfer data across I/O lines in order to perform operations (e.g., between memory and discrete processor), a number of embodiments can enable an increased parallel processing capability as compared to previous approaches.

FIG. 3 illustrates a schematic diagram of a portion of a memory array 301 in accordance with a number of embodiments of the present disclosure. The array 301 includes memory cells (referred to generally as memory cells 303, and more specifically as 303-0 to 303-J) coupled to rows of access lines 304-0, . . . , 304-R and columns of sense lines 305-0, 305-1, 305-2, 305-3, 305-4, 305-5, 305-6, 305-7, . . . , 305-S. Memory array 330 is not limited to a particular number of access lines and/or sense lines, and use of the terms “rows” and “columns” does not intend a particular physical structure and/or orientation of the access lines and/or sense lines. Although not pictured, each column of memory cells can be associated with a corresponding pair of complementary sense lines (e.g., complementary sense lines 205-1 and 205-2 in FIG. 2A).

Each column of memory cells can be coupled to sensing circuitry (e.g., sensing circuitry 150 shown in FIG. 1). In this example, the sensing circuitry comprises a number of sense amplifiers 306-0, 306-1, 306-2, 306-3, 306-4, 306-5, 306-6, 306-7, . . . , 306-U (refereed generally as sense amplifiers 306) coupled to the respective sense lines 305-0, 305-1, 305-2, 305-3, 305-4, 305-5, 305-6, 305-7, . . . , 305-S. The sense amplifiers 306 are coupled to input/output (I/O) line 334 (e.g., a local I/O line) via access devices (e.g., transistors) 308-0, 308-1, 308-2, 308-3, 308-4, 308-5, 308-6, 308-7, . . . , 308-V. In this example, the sensing circuitry also comprises a number of compute components 331-0, 331-1, 331-2, 331-3, 331-4, 331-5, 331-6, 331-7, . . . , 331-X (referred to generally as compute components 331) coupled to the respective sense lines. Column decode lines 310-1 to 310-W are coupled to the gates of transistors 308-1 to 308-V, respectively, and can be selectively activated to transfer data sensed by respective sense amps 306-0 to 306-U and/or stored in respective compute components 331-0 to 331-X to a secondary sense amplifier 312. In a number of embodiments, the compute components 331 can be formed on pitch with the memory cells of their corresponding columns and/or with the corresponding sense amplifiers 306. In this way, in an array comprising 16K columns, 16K vertically stored data elements could be processed in parallel by the corresponding 16K 1-bit processors. For example, each column can process 1-bit information in parallel.

The memory cells 303 can store a number of bit vectors. For example, memory cells 303 that are couple to a particular sense line 305 can store a vertical bit vector. For example, in FIG. 3 the memory cells that are coupled to sense line 305-0 and coupled to access lines 304-0 to 304-R can store a vertical bit vector having R+1 bits. Also, memory cells 303 that are coupled to a particular access line 304 can store a horizontal bit vector. For example, in FIG. 3 the memory cells that are coupled to access line 304-0 and sense lines 305-0 to 305-S can store a horizontal bit vectors having S+1 bits. In a number of embodiments, the sensing circuitry (e.g., compute components 331 and sense amplifiers 306) is configured to generate span masks using a number of elements stored as bit vectors in array 301.

FIG. 4 illustrates a table showing the states of memory cells of an array during span mask generation in accordance with a number of embodiments of the present disclosure. An example of span mask generation is described below in association with FIG. 4, which illustrates a table showing the states of memory cells of an array (e.g., array 330) during span mask generation in accordance with a number of embodiments described herein. The reference numbers of the rows of the tables shown in FIG. 4 correspond to respective steps of the example described below (e.g., row 461 corresponds to a first step of the example, row 463 corresponds to a second step of the example, etc.). Each row of the tables indicates the values of a number of bit vectors 633 (Comp_Comp), 435 (Temp), 437 (Elem_Mask), 439 (Mask) at a particular step of span mask generation.

The example described in association with FIG. 4 is associated with span mask generation for a bit vector that includes a number of elements each comprising a number of bits. In a number of embodiments, span mask generation can include performing a number of iterations of a portion of a span mask generation algorithm. Each of the number of iterations can generate a span mask. Span mask generation can include performing 1+log₂(mask depth) iterations, where the mask depth indicates the maximum number of bits in the span masks and is a number that is multiple of two up to half of the number bits in the number of elements. In the example described in association with FIG. 4, a first span mask is generated as indicated in the mask 439 at step 467-3 as 0xAAAAAAAA and a second span mask is generated as indicated in mask 439 at step 4679-3 as 0xCCCCCCCC.

In this example, the bit-bit vectors Comp_Comp 433, Temp 435, Elem_Mask 437, and Mask 439 have a length of 32 bits and the element size is 4 bits, therefore the bit vector includes 8 elements. The result of an iteration of the span mask generation algorithm can be stored in the array of memory cells (e.g., as Mask bit vector 439). For instance, in the example of FIG. 4, the memory cells corresponding to Mask 439 are used to store the result of a span mask generation iteration. The result of the span mask generation iteration can be also be stored and/or transferred to other bit vectors an array and/or can be transferred external to the array (e.g., to functional unit circuitry of a host).

The bit vectors 433 (Comp_Comp), 435 (Temp), 437 (Elem_Mask), and 439 (Mask) can be used in association with span mask generation. The bit vectors 433, 435, 437, and 439 can be stored in respective groups of memory cells coupled to particular access lines, which may be referred to as temporary storage rows (e.g., rows storing data that may be updated during various phases of span mask generation and may not be accessible to a user).

In a number of examples, span mask generation can include performing a number of AND operations, OR operations, shift operations, and invert operations. Span mask generation can include performing the AND operations, OR operations, shift operations, and invert operations without transferring data via an input/output (I/O) line to span mask generation. The number of AND operations, OR operations, invert operations, and shift operations can be performed using sensing circuitry on pitch with each of a number of columns of complementary sense lines.

The pseudo code below represents instructions executable to perform span mask generation accordance with a number of embodiments of the present disclosure. A first portion of the pseudo code can include:

- Obtain Temp Rows
- Select Mask Depth
- Exit if Maximum Possible Iterations is More Than the Element Width

The first portion of the pseudo code listed above is associated with initializing a number of groups of memory cells for use as temporary storage rows. Initializing refers to designating and/or assigning particular access lines used to store particular bit vectors for span mask generation. For example, the number of groups of memory cells can be initialized and/or designated groups of cells coupled to respective access lines (e.g., rows) that store data (e.g., on a temporary basis) in association with span mask generation. For example, a first group of memory cells corresponding to a Comp_Comp 433 bit vector can be coupled to particular access line and can store a bit vector referred to as a “Comp_Comp” bit vector. The Comp_Comp bit vector can the data stored in the accumulator. A second group of memory cells corresponding to a Temp 435 bit vector can be coupled to a particular access line (e.g., 304-R, illustrated as ROW N) and can store a bit-bit vector referred to as a “Temp” bit vector. A third group of memory cells corresponding to an Elem_Mask 437 bit vector can be coupled to a particular access line and can store a bit vector referred to as an “Elem_Mask” bit vector. A fourth group of memory cells corresponding to a Mask 439 bit vector can be coupled to a particular access line and can store a bit-bit vector referred to as a “Mask” bit vector. Obtaining the temp rows is illustrated in FIG. 4 at step 461 by values of 0x0 in bit vectors 433, 435, 437, and 439. Embodiments are not limited to a particular number of temporary storage rows and/or to storage of the corresponding bit vectors on particular access lines. Also, although the groups of memory cells used to store bit vectors may be referred to as “rows,” the respective groups of memory cells may comprise fewer than all of the cells coupled to a particular access line. Furthermore, in a number of embodiments, temporary storage rows can refer to access lines which may not be addressable by a user (e.g., access lines that are outside of a user-addressable address space).

The first portion of pseudo code can also include selecting the mask depth and a check on the whether the span mask generation algorithm can be performed for a given element width and a selected mask depth. In various embodiments, the mask depth can be no more than half of the element width. The mask depth and the element width can determine how elements are dispersed. For example, a mask depth of 1 would indicate that the generated pattern includes 1 element and would be space as [10101010] The pseudo code can include checking to make sure the maximum possible iterations for a selected mask depth is not more than the element width by performing a left shift on a binary representation of the mask depth and comparing the result to the element width. If the result of left shift of the binary representation of the mask depth is less than the element width, the span mask generation algorithm can proceed. If the result of left shift of the binary representation of the mask depth is greater than the element width, the span mask generation algorithm is terminated.

A second portion of the pseudo code associated with span mask generation can include:

- Get MSB bit in Comp_Comp
- Obtain Element Mask by Shifting MSB bit by the Element Width and Performing an OR Operation with Comp_Comp

The second portion of the pseudo code above illustrates obtaining the most significant bit (MSB) of a bit vector in Comp_Comp 433. In FIG. 4, the MSB of bit vector is illustrated at step 463 as 0x80000000 in Comp_Comp 433, which indicates the leftmost bit in the 32 bit vector is the MSB. The result of obtaining the MSB of the bit vectors is also stored in Mask 439. The second portion of the pseudo code also includes creating an element mask. The element mask is created by shift the MSB of the bit vector by the element width and performing an OR operation with the Comp_Comp 433 bit vector. This shift and OR operation is repeated until the MSB of the bit vector is in each of the element in the bit vector. In FIG. 4, Elem_Mask 437 is shown at step 465 as bit vector 0x88888888, where the MSB of the bit vector is in the first position of each of the four bit elements in the bit vector.

A third portion of the pseudo code can be associated with performing a number of iterations the span mask generation algorithm and includes:

- For all Mask Depth Perform 1+log₂(Mask Depth) Iterations, Starting at i=1
  - Copy Elem_Mask to Mask and Comp_Comp
  - Calculate Shift for Copy
  - Create Starting Mask by Shifting Elem_Mask to the Right by 1 Position and Performing an OR Operation with Comp_Comp, from 2 to Shift for Copy
  - Calculate Span Width
  - Calculate Copy Bit Ratio
  - Create Span Mask by Shifting Temp to the Right by 2*i,
- when Copy Bit Ratio −1 is greater than 0.

The third portion of the pseudo code above illustrates a number of iterations the span mask generation algorithm. The third portion of the pseudo code is performed for each iteration of the span mask generation algorithm, where the number of iterations is determined by adding 1 to log₂(Mask Depth). The example illustrated in FIG. 4 includes 2 iterations (e.g., 1+log₂(2)=2). The third portion of the pseudo code includes loading the Element Mask, which is obtained according the description above, to Mask 439 and Comp_Comp 433, as illustrated at step 467-1 in FIG. 4. The third portion of pseudo code includes obtaining a shift for copy, which is 2^i-1, and creating a starting mask by shifting the Element Mask to the right by 1 position and performing an OR operation with Comp_Comp. This shift and OR operation is repeated a number of times based on the shift for copy value, from 2 to the shift for copy value times. For example, the shift and OR operation is repeated 3 times when the shift for copy value is 4 and repeated 7 times when the shift for copy value is 8, and so on. In the example illustrated in FIG. 1, this shift and OR operation is not performed in the first iteration because shift for copy is 1, which is less than 2, and the shift and OR operation is performed once because shift for copy is 2, as shown in Temp 435 at step 469-2.

The third portion of the pseudo code also includes calculating span width, which is 2′, and calculating the copy bit ratio, which is the element width divided by the span width. The starting mask which created, as described above, is shift by 2*I, when the copy bit ration minus 1 is greater than 0, and performing an OR operation with Comp_Comp. This shift and OR operation is repeated based on the copy bit ratio value and is repeated 1 minus the copy bit ratio value times. The example illustrated in FIG. 4 includes in the first iteration shifting the starting mask by 2 as shown in Mask 439 at step 467-3 as 0xAAAAAAAA. In the example illustrated in FIG. 4, the shift of the starting mask by 2*i is not performed because the copy bit ratio for the second iteration is 1. The example illustrated in FIG. 4 includes creating a span mask associated with the first iteration shown in Mask 439 at step 467-3 as 0xAAAAAAAA and a span mask associated with the second iteration shown as Mask 439 at step 469-3 as 0xCCCCCCCC.

FIG. 5A illustrates a timing diagram associated with performing a number of logical operations using sensing circuitry in accordance with a number of embodiments of the present disclosure. The functionality of the sensing circuitry 250 of FIG. 2A is described below with respect to performing logical operations and initially storing a result in the compute component 231 (e.g., secondary latch of the Comp_Compulator). The timing diagram shown in FIG. 5A illustrates signals (e.g., voltage signals) associated with performing a first operation phase of a logical operation (e.g., an R-input logical operation) using the sensing circuitry illustrated in FIG. 2A. The first operation phase described with respect to FIG. 5A can be a first operation phase of an AND, NAND, OR, or NOR operation, for instance. Performing the operation phase illustrated in FIG. 5A can involve consuming significantly less energy (e.g., about half) than previous processing approaches that may involve providing a full swing between voltage rails (e.g., between a supply and ground).

In the example illustrated in FIG. 5a, the voltage rails corresponding to complementary logic values (e.g., “1” and “0”) are a supply voltage (V_DD) and a reference voltage (e.g., ground (Gnd)). Prior to performing a logical operation, an equilibration can occur such that the complementary data lines D and D_ are shorted together at an equilibration voltage (V_DD/2), as previously described.

The first operation phase of a logical operation described below involves loading a first operand of the logical operation into the Comp_Compulator. The time references (e.g., t₁, etc.) shown in FIG. 5A do not necessarily represent a same absolute or relative time as similar time references in other timing diagrams.

At time t₁, the equilibration signal 526 is deactivated, and then a selected row is enabled (e.g., the row corresponding to a memory cell whose data value is to be sensed and used as a first input). Signal 504-0 represents the voltage signal applied to the selected row (e.g., Row Y 204-Y shown in FIG. 2A). When row signal 504-0 reaches the threshold voltage (Vt) of the access transistor (e.g., 202-1 shown in FIG. 2A) corresponding to the selected cell, the access transistor turns on and couples the data line D to the selected memory cell (e.g., to the capacitor 203-1 shown in FIG. 2A if the cell is a 1T1C DRAM cell), which creates a differential voltage signal between the data lines D and D_ (e.g., as indicated by signals 505-1 and 505-2 on the data lines, respectively) between times t₂and t3. The voltage of the selected cell is represented by signal 503. Due to conservation of energy, creating the differential signal between data lines D and D_ (e.g., by coupling the cell to data line D) does not consume energy, since the energy associated with enabling/disabling the row signal 504-0 can be amortized over the plurality of memory cells coupled to the row.

At time t₃, the sense amplifier (e.g., 206 shown in FIG. 2A) is enabled (e.g., a positive control signal 590 (e.g., corresponding to ACT 290 shown in FIG. 2B) goes high and the negative control signal 528 (e.g., corresponding to RnIF 228 shown in FIG. 2B) goes low), which amplifies the differential signal between data lines D and D_, resulting in a voltage (e.g., V_DD) corresponding to a logic “1” or a voltage (e.g., ground) corresponding to a logic “0” being on data line D (and the other voltage being on complementary data line D_), such that the sensed data value is stored in the primary latch of sense amplifier 206. The primary energy consumption occurs in charging the data line D (205-1) from the equilibration voltage V_DD/2 to the rail voltage V_DD. FIG. 5A shows, in example, the data line voltages 505-1 and 505-2 that correspond to a logic “1” being on data line D.

According to some embodiments, the primary latch of sense amplifier 206 can be coupled to the complementary data lines D and D_ through respective pass transistors (not shown in FIG. 2A but in a similar configuration as the manner in which latch 264 is coupled to the data lines D and D_ through load/pass transistors 218-1 and 218-2 shown in FIG. 2A). The Passd control signal 511 controls one pass transistor. The Passdb control signal controls the other pass transistor, and here the Passdb control signal can behave here the same as the Passd control signal.

At time t₄, the pass transistors (if present) can be enabled (e.g., via respective Passd and Passdb control signals 511 applied to control lines coupled to the respective gates of the pass transistors going high). At time t₅, the Comp_Compulator positive control signal 512-1 (e.g., Comp_Comp) and the Comp_Compulator positive control signal 512-2 (e.g., Comp_Comp) are activated via respective control lines 212-1 and 212-2 shown in FIG. 2A. As described below, the Comp_Compulator control signals COMP_COMPB 1412-1 and COMP_COMP 512-2 may remain activated for subsequent operation phases. As such, in this example, activating the control signals COMP_COMPB 512-1 and COMP_COMP 512-2 enables the secondary latch (e.g., Comp_Compulator) of compute component 231 shown in FIG. 2A. The sensed data value stored in sense amplifier 206 is transferred (e.g., copied) to the secondary latch, including the dynamic latch and latch 264.

At time t₆, the Passd control signal 511 (and the Passdb control signal) goes low thereby turning off the pass transistors (if present). However, since the Comp_Compulator control signals COMP_COMPB 512-1 and COMP_COMP 512-2 remain activated, an Comp_Compulated result is stored (e.g., latched) in the secondary latches (e.g., Comp_Compulator). At time t₇, the row signal 504-0 is deactivated, and the array sense amps are disabled at time t₈(e.g., sense amplifier control signals 528 and 590 are deactivated).

At time t₉, the data lines D and D_ are equilibrated (e.g., equilibration signal 526 is activated), as illustrated by data line voltage signals 505-1 and 505-2 moving from their respective rail values to the equilibration voltage (V_DD/2). The equilibration consumes little energy due to the law of conservation of energy. As described above in association with FIG. 2B, equilibration can involve shorting the complementary data lines D and D_ together at an equilibration voltage, which is V_DD/2, in this example. Equilibration can occur, for instance, prior to a memory cell sensing operation.

FIGS. 5B and 5C respectively illustrate timing diagrams associated with performing a number of logical operations using sensing circuitry in accordance with a number of embodiments of the present disclosure. Timing diagrams shown in FIGS. 5B and 5C illustrate signals (e.g., voltage signals) associated with performing a number of intermediate operation phases of a logical operation (e.g., an R-input logical operation). For instance, timing diagram shown in FIG. 5B corresponds to a number of intermediate operation phases of an R-input NAND operation or an R-input AND operation, and timing diagram shown in FIG. 5C corresponds to a number of intermediate operation phases of an R-input NOR operation or an R-input OR operation. For example, performing an AND or NAND operation can include performing the operation phase shown in FIG. 5B one or more times subsequent to an initial operation phase such as that described with respect to FIG. 5A. Similarly, performing an OR or NOR operation can include performing the operation phase shown and described with respect to FIG. 5C one or more times subsequent to an initial operation phase such as that described with respect to FIG. 5A.

As shown in the timing diagrams illustrated in FIGS. 5B and 5C, at time t₁, equilibration is disabled (e.g., the equilibration signal 526 is deactivated), and then a selected row is enabled (e.g., the row corresponding to a memory cell whose data value is to be sensed and used as an input such as a second input, third input, etc.). Signal 504-1 represents the voltage signal applied to the selected row (e.g., Row Y 204-Y shown in FIG. 2A). When row signal 504-1 reaches the threshold voltage (Vt) of the access transistor (e.g., 202-1 shown in FIG. 2A) corresponding to the selected cell, the access transistor turns on and couples the data line D to the selected memory cell (e.g., to the capacitor 203-1 if the cell is a 1T1C DRAM cell), which creates a differential voltage signal between the data lines D and D_ (e.g., as indicated by signals 505-1 and 505-2, respectively) between times t₂and t₃. The voltage of the selected cell is represented by signal 503. Due to conservation of energy, creating the differential signal between D and D_ (e.g., by coupling the cell to data line D) does not consume energy, since the energy associated with activating/deactivating the row signal 504-1 can be amortized over the plurality of memory cells coupled to the row.

At time t₃, the sense amplifier (e.g., 206 shown in FIG. 2A) is enabled (e.g., a positive control signal 590 (e.g., corresponding to ACT 233 shown in FIG. 2B) goes high, and the negative control signal 528 (e.g., RnIF 228 shown in FIG. 2B) goes low), which amplifies the differential signal between D and D_, resulting in a voltage (e.g., V_DD) corresponding to a logic 1 or a voltage (e.g., ground) corresponding to a logic 0 being on data line D (and the other voltage being on complementary data line D_), such that the sensed data value is stored in the primary latch of sense amplifier 206. The primary energy consumption occurs in charging the data line D (205-1) from the equilibration voltage V_DD/2 to the rail voltage V_DD.

As shown in timing diagrams illustrated in FIGS. 5B and 5C, at time t₄(e.g., after the selected cell is sensed), only one of control signals 511-1 (Passd) shown in FIGS. 5B and 511-2 (Passdb) shown in FIG. 5C is activated (e.g., only one of pass transistors (if present) is enabled), depending on the particular logic operation. For example, since the timing diagram illustrated in FIG. 5B corresponds to an intermediate phase of a NAND or AND operation, control signal 511-1 (Passd) is activated at time t₄to turn on the pass transistor coupling the primary latch to data line D and the Passdb control signal remains deactivated leaving the pass transistor coupling the primary latch to data line D_ turned off. Conversely, since the timing diagram illustrated in FIG. 5C corresponds to an intermediate phase of a NOR or OR operation, control signal 511-2 (Passdb) is activated at time t4 to turn on the pass transistor coupling the primary latch to data line D_ and control signal Passd remains deactivated leaving the pass transistor coupling the primary latch to data line D turned off. Recall from above that the Comp_Compulator control signals 512-1 (Comp_Comp) and 512-2 (Comp_Comp) were activated during the initial operation phase described with respect to FIG. 5A, and they remain activated during the intermediate operation phase(s).

Since the Comp_Compulator was previously enabled, activating only Passd (511-1 as shown in FIG. 5B) results in Comp_Compulating the data value corresponding to the voltage signal 505-1 shown in FIG. 5B corresponding to data line D. Similarly, activating only Passdb (511-2 as shown in FIG. 5C) results in Comp_Compulating the data value corresponding to the voltage signal 505-2 corresponding to data line D_. For instance, in an example AND/NAND operation shown in the timing diagram illustrated in FIG. 5B in which only Passd (511-1) is activated, if the data value stored in the second selected memory cell is a logic “0,” then the Comp_Compulated value associated with the secondary latch is asserted low such that the secondary latch stores logic “0.” If the data value stored in the second selected memory cell is not a logic“0,” then the secondary latch retains its stored first selected memory cell data value (e.g., a logic “1” or a logic “0”). As such, in this AND/NAND operation example, the secondary latch is serving as a zeroes (0s) Comp_Compulator.

Similarly, in an example OR/NOR operation shown in the timing diagram illustrated in FIG. 5C in which only Passdb 511-2 is activated, if the data value stored in the second selected memory cell is a logic “1,” then the Comp_Compulated value associated with the secondary latch is asserted high such that the secondary latch stores logic “1.” If the data value stored in the second selected memory cell is not a logic “1,” then the secondary latch retains its stored first selected memory cell data value (e.g., a logic “1” or a logic “0”). As such, in this OR/NOR operation example, the secondary latch is effectively serving as a ones (1s) Comp_Compulator since voltage signal 505-2 on D_ is setting the true data value of the Comp_Compulator.

At the conclusion of an intermediate operation phase such as that shown in FIG. 5B or 5C, the Passd signal 511-1 (e.g., for AND/NAND) or the Passdb signal 511-2 (e.g., for OR/NOR) is deactivated (e.g., at time t5), the selected row is disabled (e.g., at time t6), the sense amplifier is disabled (e.g., at time t7), and equilibration occurs (e.g., at time t8). An intermediate operation phase such as that illustrated in FIG. 5B or 5C can be repeated in order to Comp_Compulate results from a number of additional rows. As an example, the sequence of timing diagram illustrated in FIGS. 5B and/or 5C can be performed a subsequent (e.g., second) time for a third memory cell, a subsequent (e.g., third) time for a fourth memory cell, etc. For instance, for a 10-input NOR operation, the intermediate phase shown in FIG. 5C can occur 9 times to provide 9 inputs of the 10-input logical operation, with the tenth input being determined during the initial operation phase (e.g., as described with respect to FIG. 5A).

FIG. 5D illustrates a timing diagram associated with performing a number of logical operations using sensing circuitry in accordance with a number of embodiments of the present disclosure. The timing diagram illustrated in FIG. 5D shows signals (e.g., voltage signals) associated with performing a last operation phase of a logical operation (e.g., an R-input logical operation). For instance, the timing diagram illustrated in FIG. 5D corresponds to a last operation phase of an R-input AND operation or an R-input OR operation.

For example, performing a last operation phase of an R-input can include performing the operation phase shown in FIG. 5D subsequent to a number of iterations of the intermediate operation phase(s) described in association with FIGS. 5B and/or 5C. Table 3 shown below indicates the Figures corresponding to the sequence of operation phases associated with performing a number of R-input logical operations in accordance with a number of embodiments described herein.

TABLE 3

Operation
FIG. 5A
FIG. 5B
FIG. 5C
FIG. 5D

AND
First phase
R-1

Last phase

iterations

NAND
First phase
R-1

iterations

OR
First phase

R-1
Last phase

iterations

NOR
First phase

R-1

iterations

A NAND operation can be implemented, for example, by storing the result of the R−1 iterations for an AND operation in the sense amplifier, then inverting the sense amplifier before conducting the last operation phase to store the result (described below). A NOR operation can be implemented, for example, by storing the result of the R−1 iterations for an OR operation in the sense amplifier, then inverting the sense amplifier before conducting the last operation phase to store the result (described below).

The last operation phase illustrated in the timing diagram of FIG. 5D is described in association with storing a result of an R-input logical operation to a row of the array (e.g., array 230 shown in FIG. 2A). However, as described above, in a number of embodiments, the result can be stored to a suitable location other than back to the array (e.g., to an external register associated with a controller and/or host processor, to a memory array of a different memory device, etc., via I/O lines).

As shown in timing diagram illustrated in FIG. 5D, at time t₁, equilibration is disabled (e.g., the equilibration signal 526 is deactivated) such that data lines D and D_ are floating. At time t₂, the Passd control signal 511 (and Passdb signal) is activated for an AND or OR operation.

Activating the Passd control signal 511 (and Passdb signal) (e.g., in association with an AND or OR operation) transfers the Comp_Compulated output stored in the secondary latch of compute component 231 shown in FIG. 2A to the primary latch of sense amplifier 206. For instance, for an AND operation, if any of the memory cells sensed in the prior operation phases (e.g., the first operation phase illustrated in FIG. 5A and one or more iterations of the intermediate operation phase illustrated in FIG. 5B) stored a logic “0” (e.g., if any of the R-inputs of the AND operation were a logic “0”), then the data line D_ will carry a voltage corresponding to logic “1” (e.g., V_DD) and data line D will carry a voltage corresponding to logic “0” (e.g., ground). For this AND operation example, if all of the memory cells sensed in the prior operation phases stored a logic “1” (e.g., all of the R-inputs of the AND operation were logic “1”), then the data line D_ will carry a voltage corresponding to logic “0” and data line D will carry a voltage corresponding to logic “1”. At time t₃, the primary latch of sense amplifier 206 is then enabled (e.g., a positive control signal 290 (e.g., corresponding to ACT 290 shown in FIG. 2B) goes high and the negative control signal 528 (e.g., corresponding to RnIF 228 shown in FIG. 2B) goes low), which amplifies the differential signal between data lines D and D_ such that the data line D now carries the ANDed result of the respective input data values as determined from the memory cells sensed during the prior operation phases. As such, data line D will be at ground if any of the input data values are a logic “0” and data line D will be at V_DDif all of the input data values are a logic “1.”

For an OR operation, if any of the memory cells sensed in the prior operation phases (e.g., the first operation phase of FIG. 5A and one or more iterations of the intermediate operation phase shown in FIG. 5C) stored a logic “1” (e.g., if any of the R-inputs of the OR operation were a logic “1”), then the data line D_ will carry a voltage corresponding to logic “0” (e.g., ground) and data line D will carry a voltage corresponding to logic “1” (e.g., VDD). For this OR example, if all of the memory cells sensed in the prior operation phases stored a logic “0” (e.g., all of the R-inputs of the OR operation were logic “0”), then the data line D will carry a voltage corresponding to logic “0” and data line D_ will carry a voltage corresponding to logic “1.” At time t3, the primary latch of sense amplifier 206 is then enabled and the data line D now carries the ORed result of the respective input data values as determined from the memory cells sensed during the prior operation phases. As such, data line D will be at V_DDif any of the input data values are a logic “1” and data line D will be at ground if all of the input data values are a logic “0”.

The result of the R-input AND or OR logical operations can then be stored back to a memory cell of array 230 shown in FIG. 2A. In the examples shown in FIG. 5D, the result of the R-input logical operation is stored to a memory cell coupled to the last row enabled (e.g., row of the last logical operation operand). Storing the result of the logical operation to a memory cell simply involves enabling the associated row access transistor by enabling the particular row. The capacitor of the memory cell will be driven to a voltage corresponding to the data value on the data line D (e.g., logic “1” or logic “0”), which essentially overwrites whatever data value was previously stored in the selected memory cell. It is noted that the selected memory cell can be a same memory cell that stored a data value used as an input for the logical operation. For instance, the result of the logical operation can be stored back to a memory cell that stored an operand of the logical operation.

The timing diagram illustrated in FIG. 5D show, at time t3, the positive control signal 590 and the negative control signal 528 being deactivated (e.g., signal 590 goes high and signal 528 goes low) to disable the sense amplifier 206 shown in FIG. 2A. At time t4 the Passd control signal 511 (and Passdb signal) that was activated at time t2 is deactivated. Embodiments are not limited to this example. For instance, in a number of embodiments, the sense amplifier 206 shown in FIG. 2A may be enabled subsequent to time t4 (e.g., after he Passd control signal 511 (and Passdb signal) are deactivated).

As shown in FIG. 5D, at time t5, a selected row is enabled (e.g., by row activation signal 504 going high, which drives the capacitor of the selected cell to the voltage corresponding to the logic value stored in the Comp_Compulator. At time t6 the selected row is disabled. At time t7 the sense amplifier 206 shown in FIG. 2A is disabled (e.g., positive control signal 528 and negative control signal 590 are deactivated in FIG. 5D), and at time t8 equilibration occurs (e.g., signal 526 is activated and the voltages on the complementary data lines 505-1 (D) and 505-2 (D_) are brought to the equilibration voltage, as shown in FIG. 5D).

Although the example of performing a last operation phase of an R-input was discussed above with respect to FIG. 5D for performing AND and OR logical operations, embodiments are not limited to these logical operations. For example, the NAND and NOR operations can also involve a last operation phase of an R-input that is stored back to a memory cell of array 230 using control signals to operate the sensing circuitry illustrated in FIG. 2A.

The functionality of the sensing circuitry 250 of FIG. 2A is described below and summarized in Table 1 below with respect to performing logical operations and initially storing a result in the sense amplifier 206. Initially storing the result of a particular logical operation in the primary latch of sense amplifier 206 can provide improved versatility as compared to previous approaches in which the result may initially reside in a secondary latch (e.g., Comp_Compulator) of a compute component 231, and then be subsequently transferred to the sense amplifier 206, for instance.

TABLE 1

Operation
Comp_Compulator
Sense Amp

AND
Unchanged
Result

OR
Unchanged
Result

NOT
Unchanged
Result

SHIFT
Unchanged
Shifted Data

Initially storing the result of a particular operation in the sense amplifier 206 (e.g., without having to perform an additional operation to move the result from the compute component 231 (e.g., Comp_Compulator) to the sense amplifier 206) is advantageous because, for instance, the result can be written to a row (of the array of memory cells) or back into the Comp_Compulator without performing a precharge cycle (e.g., on the complementary data lines 205-1 (D) and/or 205-2 (D_)).

FIG. 6A illustrates a timing diagram associated with performing a number of logical operations using sensing circuitry in accordance with a number of embodiments of the present disclosure. FIG. 6A illustrates a timing diagram associated with initiating an AND logical operation on a first operand and a second operand. In this example, the first operand is stored in a memory cell coupled to a first access line (e.g., ROW X) and the second operand is stored in a memory cell coupled to a second access line (e.g., ROW Y). Although the example refers to performing an AND on data stored in cells corresponding to one particular column, embodiments are not so limited. For instance, an entire row of data values can be ANDed, in parallel, with a different row of data values. For example, if an array comprises 2,048 columns, then 2,048 AND operations could be performed in parallel.

FIG. 6A illustrates a number of control signals associated with operating sensing circuitry (e.g., 250 in FIG. 2A) to perform the AND logical operation. “EQ” corresponds to an equilibrate signal applied to the sense amp 206, “ROW X” corresponds to an activation signal applied to access line 204-X, “ROW Y” corresponds to an activation signal applied to access line 204-Y, “Act” and “RnIF” correspond to a respective active positive and negative control signal applied to the sense amp 206, “LOAD” corresponds to a load control signal (e.g., LOAD/PASSD and LOAD/PASSDb shown in FIG. 2A), and “AND” corresponds to the AND control signal shown in FIG. 2A. FIG. 6A also illustrates the waveform diagrams showing the signals (e.g., voltage signals) on the digit lines D and D_ corresponding to sense amp 206 and on the nodes S1 and S2 corresponding to the compute component 231 (e.g., Comp_Comp) during an AND logical operation for the various data value combinations of the Row X and Row Y data values (e.g., diagrams correspond to respective data value combinations 00, 10, 01, 11). The particular timing diagram waveforms are discussed below with respect to the pseudo code associated with an AND operation of the circuit shown in FIG. 2A.

An example of pseudo code associated with loading (e.g., copying) a first data value stored in a cell coupled to row 204-X into the Comp_Compulator can be summarized as follows:

- Copy Row X into the Comp_Compulator:
  - Deactivate EQ
  - Open Row X
  - Fire Sense Amps (after which Row X data resides in the sense amps)
  - Activate LOAD (sense amplifier data (Row X) is transferred to nodes S1 and S2 of the Comp_Compulator and resides there dynamically)
  - Deactivate LOAD
  - Close Row X
  - Precharge

In the pseudo code above, “Deactivate EQ” indicates that an equilibration signal (EQ signal shown in FIG. 6A) corresponding to the sense amplifier 206 is disabled at t₁as shown in FIG. 6A (e.g., such that the complementary data lines (e.g., 205-1 (D) and 205-2 (D_) are no longer shorted to V_DD/2). After equilibration is disabled, a selected row (e.g., ROW X) is enabled (e.g., selected, opened such as by activating a signal to select a particular row) as indicated by “Open Row X” in the pseudo code and shown at t₂for signal Row X in FIG. 6A. When the voltage signal applied to ROW X reaches the threshold voltage (Vt) of the access transistor (e.g., 202-2) corresponding to the selected cell, the access transistor turns on and couples the data line (e.g., 205-2 (D_)) to the selected cell (e.g., to capacitor 203-2) which creates a differential voltage signal between the data lines.

After Row X is enabled, in the pseudo code above, “Fire Sense Amps” indicates that the sense amplifier 206 is enabled to set the primary latch and subsequently disabled. For example, as shown at t3 in FIG. 6A, the ACT positive control signal (e.g., 290 shown in FIG. 2B) goes high and the RnIF negative control signal (e.g., 228 shown in FIG. 2B) goes low, which amplifies the differential signal between 205-1 (D) and D_205-2, resulting in a voltage (e.g., V_DD) corresponding to a logic 1 or a voltage (e.g., GND) corresponding to a logic 0 being on data line 205-1 (D) (and the voltage corresponding to the other logic state being on complementary data line 205-2 (D_)). The sensed data value is stored in the primary latch of sense amplifier 206. The primary energy consumption occurs in charging the data lines (e.g., 205-1 (D) or 205-2 (D_)) from the equilibration voltage V_DD/2 to the rail voltage V_DD.

The four sets of possible sense amplifier and Comp_Compulator signals illustrated in FIG. 6A (e.g., one for each combination of Row X and Row Y data values) shows the behavior of signals on data lines D and D_. The Row X data value is stored in the primary latch of the sense amp. It should be noted that FIG. 2A shows that the memory cell including storage element 202-2, corresponding to Row X, is coupled to the complementary data line D_, while the memory cell including storage element 202-1, corresponding to Row Y, is coupled to data line D. However, as can be seen in FIG. 2A, the charge stored in memory cell 202-2 (corresponding to Row X) corresponding to a “0” data value causes the voltage on data line D_ (to which memory cell 202-2 is coupled) to go high and the charge stored in memory cell 202-2 corresponding to a “1” data value causes the voltage on data line D_ to go low, which is opposite correspondence between data states and charge stored in memory cell 202-2, corresponding to Row Y, that is coupled to data line D. These differences in storing charge in memory cells coupled to different data lines is appropriately accounted for when writing data values to the respective memory cells.

After firing the sense amps, in the pseudo code above, “Activate LOAD” indicates that the LOAD control signal goes high as shown at t₄in FIG. 6A, causing load/pass transistors 218-1 and 218-2 to conduct. In this manner, activating the LOAD control signal enables the secondary latch in the Comp_Compulator of the compute component 231. The sensed data value stored in the sense amplifier 206 is transferred (e.g., copied) to the secondary latch. As shown for each of the four sets of possible sense amplifier and Comp_Compulator signals illustrated in FIG. 6A, the behavior at inputs of the secondary latch of the Comp_Compulator indicates the secondary latch is loaded with the Row X data value. As shown in FIG. 6A, the secondary latch of the Comp_Compulator may flip (e.g., see Comp_Compulator signals for Row X=“0” and Row Y=“0” and for Row X=“1” and Row Y=“0”), or not flip (e.g., see Comp_Compulator signals for Row X=“0” and Row Y=“1” and for Row X=“1” and Row Y=“1”), depending on the data value previously stored in the dynamic latch.

After setting the secondary latch from the data values stored in the sense amplifier (and present on the data lines 205-1 (D) and 205-2 (D_) in FIG. 2A) in the pseudo code above, “Deactivate LOAD” indicates that the LOAD control signal goes back low as shown at t₅in FIG. 6A to cause the load/pass transistors 218-1 and 218-2 to stop conducting and thereby isolate the dynamic latch from the complementary data lines. However, the data value remains dynamically stored in secondary latch of the Comp_Compulator.

After storing the data value on the secondary latch, the selected row (e.g., ROW X) is disabled (e.g., deselected, closed such as by deactivating a select signal for a particular row) as indicated by “Close Row X” and indicated at t₆in FIG. 6A, which can be accomplished by the access transistor turning off to decouple the selected cell from the corresponding data line. Once the selected row is closed and the memory cell is isolated from the data lines, the data lines can be precharged as indicated by the “Precharge” in the pseudo code above. A precharge of the data lines can be accomplished by an equilibrate operation, as indicated in FIG. 6A by the EQ signal going high at t₇. As shown in each of the four sets of possible sense amplifier and Comp_Compulator signals illustrated in FIG. 6A at t₇, the equilibrate operation causes the voltage on data lines D and D_ to each return to V_DD/2. Equilibration can occur, for instance, prior to a memory cell sensing operation or the logical operations (described below).

A subsequent operation phase associated with performing the AND or the OR operation on the first data value (now stored in the sense amplifier 206 and the secondary latch of the compute component 231 shown in FIG. 2A) and the second data value (stored in a memory cell 202-1 coupled to Row Y 204-Y) includes performing particular steps which depend on the whether an AND or an OR is to be performed. Examples of pseudo code associated with “ANDing” and “ORing” the data value residing in the Comp_Compulator (e.g., the first data value stored in the memory cell 202-2 coupled to Row X 204-X) and the second data value (e.g., the data value stored in the memory cell 202-1 coupled to Row Y 204-Y) are summarized below. Example pseudo code associated with “ANDing” the data values can include:

Deactivate EQ

Open Row Y

Fire Sense Amps (after which Row Y data resides in the sense amps)

Close Row Y

- The result of the logic operation, in the next operation, will be placed on the sense amp, which will overwrite any row that is active.
- Even when Row Y is closed, the sense amplifier still contains the Row Y data value.

Activate AND

- This results in the sense amplifier being written to the value of the function (e.g., Row X AND Row Y)
- If the Comp_Compulator contains a “0” (i.e., a voltage corresponding to a “0” on node S2 and a voltage corresponding to a “1” on node S1), the sense amplifier data is written to a “0”
- If the Comp_Compulator contains a “1” (i.e., a voltage corresponding to a “1” on node S2 and a voltage corresponding to a “0” on node S1), the sense amplifier data remains unchanged (Row Y data)
- This operation leaves the data in the Comp_Compulator unchanged.

Deactivate AND

Precharge

In the pseudo code above, “Deactivate EQ” indicates that an equilibration signal corresponding to the sense amplifier 206 is disabled (e.g., such that the complementary data lines 205-1 (D) and 205-2 (D_) are no longer shorted to V_DD/2), which is illustrated in FIG. 6A at t₈. After equilibration is disabled, a selected row (e.g., ROW Y) is enabled as indicated in the pseudo code above by “Open Row Y” and shown in FIG. 6A at t₉. When the voltage signal applied to ROW Y reaches the threshold voltage (Vt) of the access transistor (e.g., 202-1) corresponding to the selected cell, the access transistor turns on and couples the data line (e.g., D_205-1) to the selected cell (e.g., to capacitor 203-1) which creates a differential voltage signal between the data lines.

After Row Y is enabled, in the pseudo code above, “Fire Sense Amps” indicates that the sense amplifier 206 is enabled to amplify the differential signal between 205-1 (D) and 205-2 (D_), resulting in a voltage (e.g., V_DD) corresponding to a logic 1 or a voltage (e.g., GND) corresponding to a logic 0 being on data line 205-1 (D) (and the voltage corresponding to the other logic state being on complementary data line 205-2 (D_)). As shown at t₁₀in FIG. 6A, the ACT positive control signal (e.g., 290 shown in FIG. 2B) goes high and the RnIF negative control signal (e.g., 228 shown in FIG. 2B) goes low to fire the sense amps. The sensed data value from memory cell 202-1 is stored in the primary latch of sense amplifier 206, as previously described. The secondary latch still corresponds to the data value from memory cell 202-2 since the dynamic latch is unchanged.

After the second data value sensed from the memory cell 202-1 coupled to Row Y is stored in the primary latch of sense amplifier 206, in the pseudo code above, “Close Row Y” indicates that the selected row (e.g., ROW Y) can be disabled if it is not desired to store the result of the AND logical operation back in the memory cell corresponding to Row Y. However, FIG. 6A shows that Row Y is left enabled such that the result of the logical operation can be stored back in the memory cell corresponding to Row Y. Isolating the memory cell corresponding to Row Y can be accomplished by the access transistor turning off to decouple the selected cell 202-1 from the data line 205-1 (D). After the selected Row Y is configured (e.g., to isolate the memory cell or not isolate the memory cell), “Activate AND” in the pseudo code above indicates that the AND control signal goes high as shown in FIG. 6A at t₁₁, causing pass transistor 207-1 to conduct. In this manner, activating the AND control signal causes the value of the function (e.g., Row X AND Row Y) to be written to the sense amp.

With the first data value (e.g., Row X) stored in the dynamic latch of the Comp_Compulator 231 and the second data value (e.g., Row Y) stored in the sense amplifier 206, if the dynamic latch of the compute component 231 contains a “0” (i.e., a voltage corresponding to a “0” on node S2 and a voltage corresponding to a “1” on node S1), the sense amplifier data is written to a “0” (regardless of the data value previously stored in the sense amp) since the voltage corresponding to a “1” on node S1 causes transistor 209-1 to conduct thereby coupling the sense amplifier 206 to ground through transistor 209-1, pass transistor 207-1 and data line 205-1 (D). When either data value of an AND operation is “0,” the result is a “0.” Here, when the second data value (in the dynamic latch) is a “0,” the result of the AND operation is a “0” regardless of the state of the first data value, and so the configuration of the sensing circuitry causes the “0” result to be written and initially stored in the sense amplifier 206. This operation leaves the data value in the Comp_Compulator unchanged (e.g., from Row X).

If the secondary latch of the Comp_Compulator contains a “1” (e.g., from Row X), then the result of the AND operation depends on the data value stored in the sense amplifier 206 (e.g., from Row Y). The result of the AND operation should be a “1” if the data value stored in the sense amplifier 206 (e.g., from Row Y) is also a “1,” but the result of the AND operation should be a “0” if the data value stored in the sense amplifier 206 (e.g., from Row Y) is also a “0.” The sensing circuitry 250 is configured such that if the dynamic latch of the Comp_Compulator contains a “1” (i.e., a voltage corresponding to a “1” on node S2 and a voltage corresponding to a “0” on node S1), transistor 209-1 does not conduct, the sense amplifier is not coupled to ground (as described above), and the data value previously stored in the sense amplifier 206 remains unchanged (e.g., Row Y data value so the AND operation result is a “1” if the Row Y data value is a “1” and the AND operation result is a “0” if the Row Y data value is a “0”). This operation leaves the data value in the Comp_Compulator unchanged (e.g., from Row X).

After the result of the AND operation is initially stored in the sense amplifier 206, “Deactivate AND” in the pseudo code above indicates that the AND control signal goes low as shown at t₁₂in FIG. 6A, causing pass transistor 207-1 to stop conducting to isolate the sense amplifier 206 (and data line 205-1 (D)) from ground. If not previously done, Row Y can be closed (as shown at t₁₃in FIG. 6A) and the sense amplifier can be disabled (as shown at t₁₄in FIG. 6A by the ACT positive control signal going low and the RnIF negative control signal goes high). With the data lines isolated, “Precharge” in the pseudo code above can cause a precharge of the data lines by an equilibrate operation, as described previously (e.g., commencing at t₁₄shown in FIG. 6A).

FIG. 6A shows, in the alternative, the behavior of voltage signals on the data lines (e.g., 205-1 (D) and 205-2 (D_) shown in FIG. 2A) coupled to the sense amplifier (e.g., 206 shown in FIG. 2A) and the behavior of voltage signals on nodes S1 and S1 of the secondary latch of the compute component (e.g., 231 shown in FIG. 2A) for an AND logical operation involving each of the possible combination of operands (e.g., Row X/Row Y data values 00, 10, 01, and 11).

Although the timing diagrams illustrated in FIG. 6A and the pseudo code described above indicate initiating the AND logical operation after starting to load the second operand (e.g., Row Y data value) into the sense amplifier, the circuit shown in FIG. 2A can be successfully operated by initiating the AND logical operation before starting to load the second operand (e.g., Row Y data value) into the sense amplifier.

FIG. 6B illustrates a timing diagram associated with performing a number of logical operations using sensing circuitry in accordance with a number of embodiments of the present disclosure. FIG. 6B illustrates a timing diagram associated with initiating an OR logical operation after starting to load the second operand (e.g., Row Y data value) into the sense amplifier. FIG. 6B illustrates the sense amplifier and Comp_Compulator signals for various combinations of first and second operand data values. The particular timing diagram signals are discussed below with respect to the pseudo code associated with an AND logical operation of the circuit shown in FIG. 2A.

A subsequent operation phase can alternately be associated with performing the OR operation on the first data value (now stored in the sense amplifier 206 and the secondary latch of the compute component 231) and the second data value (stored in a memory cell 202-1 coupled to Row Y 204-Y). The operations to load the Row X data into the sense amplifier and Comp_Compulator that were previously described with respect to times t₁-t₇shown in FIG. 6A are not repeated with respect to FIG. 6B. Example pseudo code associated with “ORing” the data values can include:

Deactivate EQ

Open Row Y

Fire Sense Amps (after which Row Y data resides in the sense amps)

Close Row Y

When Row Y is closed, the sense amplifier still contains the Row Y data value.

Activate OR

This results in the sense amplifier being written to the value of the function (e.g., Row X OR Row Y), which may overwrite the data value from Row Y previously stored in the sense amplifier as follows:

If the Comp_Compulator contains a “0” (i.e., a voltage corresponding to a “0” on node S2 and a voltage corresponding to a “1” on node S1), the sense amplifier data remains unchanged (Row Y data)

If the Comp_Compulator contains a “1” (i.e., a voltage corresponding to a “1” on node S2 and a voltage corresponding to a “0” on node S1), the sense amplifier data is written to a “1”

This operation leaves the data in the Comp_Compulator unchanged.

Deactivate OR

Precharge

The “Deactivate EQ” (shown at t₈in FIG. 6B), “Open Row Y” (shown at t₉in FIG. 6B), “Fire Sense Amps” (shown at t₁₀in FIG. 6B), and “Close Row Y” (shown at t₁₃in FIG. 6B, and which may occur prior to initiating the particular logical function control signal), shown in the pseudo code above indicate the same functionality as previously described with respect to the AND operation pseudo code. Once the configuration of selected Row Y is appropriately configured (e.g., enabled if logical operation result is to be stored in memory cell corresponding to Row Y or closed to isolate memory cell if result if logical operation result is not to be stored in memory cell corresponding to Row Y), “Activate OR” in the pseudo code above indicates that the OR control signal goes high as shown at t₁₁in FIG. 6B, which causes pass transistor 207-2 to conduct. In this manner, activating the OR control signal causes the value of the function (e.g., Row X OR Row Y) to be written to the sense amp.

With the first data value (e.g., Row X) stored in the secondary latch of the compute component 231 and the second data value (e.g., Row Y) stored in the sense amplifier 206, if the dynamic latch of the Comp_Compulator contains a “0” (i.e., a voltage corresponding to a “0” on node S2 and a voltage corresponding to a “1” on node S1), then the result of the OR operation depends on the data value stored in the sense amplifier 206 (e.g., from Row Y). The result of the OR operation should be a “1” if the data value stored in the sense amplifier 206 (e.g., from Row Y) is a “1,” but the result of the OR operation should be a “0” if the data value stored in the sense amplifier 206 (e.g., from Row Y) is also a “0.” The sensing circuitry 250 is configured such that if the dynamic latch of the Comp_Compulator contains a “0,” with the voltage corresponding to a “0” on node S2, transistor 209-2 is off and does not conduct (and pass transistor 207-1 is also off since the AND control signal is not asserted) so the sense amplifier 206 is not coupled to ground (either side), and the data value previously stored in the sense amplifier 206 remains unchanged (e.g., Row Y data value such that the OR operation result is a “1” if the Row Y data value is a “1” and the OR operation result is a “0” if the Row Y data value is a “0”).

If the dynamic latch of the Comp_Compulator contains a “1” (i.e., a voltage corresponding to a “1” on node S2 and a voltage corresponding to a “0” on node S1), transistor 209-2 does conduct (as does pass transistor 207-2 since the OR control signal is asserted), and the sense amplifier 206 input coupled to data line 205-2 (D_) is coupled to ground since the voltage corresponding to a “1” on node S2 causes transistor 209-2 to conduct along with pass transistor 207-2 (which also conducts since the OR control signal is asserted). In this manner, a “1” is initially stored in the sense amplifier 206 as a result of the OR operation when the secondary latch of the Comp_Compulator contains a “1” regardless of the data value previously stored in the sense amp. This operation leaves the data in the Comp_Compulator unchanged. FIG. 6B shows, in the alternative, the behavior of voltage signals on the data lines (e.g., 205-1 (D) and 205-2 (D_) shown in FIG. 2A) coupled to the sense amplifier (e.g., 206 shown in FIG. 2A) and the behavior of voltage signals on nodes S1 and S2 of the secondary latch of the compute component 231 for an OR logical operation involving each of the possible combination of operands (e.g., Row X/Row Y data values 00, 10, 01, and 11).

After the result of the OR operation is initially stored in the sense amplifier 206, “Deactivate OR” in the pseudo code above indicates that the OR control signal goes low as shown at t₁₂in FIG. 6B, causing pass transistor 207-2 to stop conducting to isolate the sense amplifier 206 (and data line D 205-2) from ground. If not previously done, Row Y can be closed (as shown at t₁₃in FIG. 6B) and the sense amplifier can be disabled (as shown at t₁₄in FIG. 4 by the ACT positive control signal going low and the RnIF negative control signal going high). With the data lines isolated, “Precharge” in the pseudo code above can cause a precharge of the data lines by an equilibrate operation, as described previously and shown at t₁₄in FIG. 6B.

The sensing circuitry 250 illustrated in FIG. 2A can provide additional logical operations flexibility as follows. By substituting operation of the ANDinv control signal for operation of the AND control signal, and/or substituting operation of the ORinv control signal for operation of the OR control signal in the AND and OR operations described above, the logical operations can be changed from {Row X AND Row Y} to {˜Row X AND Row Y} (where “˜Row X” indicates an opposite of the Row X data value, e.g., NOT Row X) and can be changed from {Row X OR Row Y} to {˜Row X OR Row Y}. For example, during an AND operation involving the inverted data values, the ANDinv control signal can be asserted instead of the AND control signal, and during an OR operation involving the inverted data values, the ORInv control signal can be asserted instead of the OR control signal. Activating the ORinv control signal causes transistor 214-1 to conduct and activating the ANDinv control signal causes transistor 214-2 to conduct. In each case, asserting the appropriate inverted control signal can flip the sense amplifier and cause the result initially stored in the sense amplifier 206 to be that of the AND operation using inverted Row X and true Row Y data values or that of the OR operation using the inverted Row X and true Row Y data values. A true or compliment version of one data value can be used in the Comp_Compulator to perform the logical operation (e.g., AND, OR), for example, by loading a data value to be inverted first and a data value that is not to be inverted second.

In a similar approach to that described above with respect to inverting the data values for the AND and OR operations described above, the sensing circuitry shown in FIG. 2A can perform a NOT (e.g., invert) operation by putting the non-inverted data value into the dynamic latch of the Comp_Compulator and using that data to invert the data value in the sense amplifier 206. As previously mentioned, activating the ORinv control signal causes transistor 214-1 to conduct and activating the ANDinv control signal causes transistor 214-2 to conduct. The ORinv and/or ANDinv control signals are used in implementing the NOT function, as described further below:

Copy Row X into the Comp_Compulator

Deactivate EQ

Open Row X

Fire Sense Amps (after which Row X data resides in the sense amps)

Activate LOAD (sense amplifier data (Row X) is transferred to nodes S1 and S2 of the Comp_Compulator and resides there dynamically

Deactivate LOAD

Activate ANDinv and ORinv (which puts the compliment data value on the data lines)

This results in the data value in the sense amplifier being inverted (e.g., the sense amplifier latch is flipped)

- This operation leaves the data in the Comp_Compulator unchanged

Deactivate ANDinv and ORinv

Close Row X

Precharge

The “Deactivate EQ,” “Open Row X,” “Fire Sense Amps,” “Activate LOAD,” and “Deactivate LOAD” shown in the pseudo code above indicate the same functionality as the same operations in the pseudo code for the “Copy Row X into the Comp_Compulator” initial operation phase described above prior to pseudo code for the AND operation and OR operation. However, rather than closing the Row X and Precharging after the Row X data is loaded into the sense amplifier 206 and copied into the dynamic latch, a compliment version of the data value in the dynamic latch of the Comp_Compulator can be placed on the data line and thus transferred to the sense amplifier 206 by enabling (e.g., causing transistor to conduct) and disabling the invert transistors (e.g., ANDinv and ORinv). This results in the sense amplifier 206 being flipped from the true data value that was previously stored in the sense amplifier to a compliment data value (e.g., inverted data value) stored in the sense amp. For example, a true or compliment version of the data value in the Comp_Compulator can be transferred to the sense amplifier by activating and deactivating ANDinv and ORinv. This operation leaves the data in the Comp_Compulator unchanged.

Because the sensing circuitry 250 shown in FIG. 2A initially stores the result of the AND, OR, and NOT logical operations in the sense amplifier 206 (e.g., on the sense amplifier nodes), these logical operation results can be communicated easily and quickly to any enabled row, any row activated after the logical operation is complete, and/or into the secondary latch of the compute component 231. The sense amplifier 206 and sequencing for the AND, OR, and/or NOT logical operations can also be interchanged by appropriate firing of the AND, OR, ANDinv, and/or ORinv control signals (and operation of corresponding transistors having a gate coupled to the particular control signal) before the sense amplifier 206 fires.

When performing logical operations in this manner, the sense amplifier 206 can be pre-seeded with a data value from the dynamic latch of the Comp_Compulator to reduce overall current utilized because the sense amps 206 are not at full rail voltages (e.g., supply voltage or ground/reference voltage) when Comp_Compulator function is copied to the sense amplifier 206. An operation sequence with a pre-seeded sense amplifier 206 either forces one of the data lines to the reference voltage (leaving the complementary data line at V_DD/2, or leaves the complementary data lines unchanged. The sense amplifier 206 pulls the respective data lines to full rails when the sense amplifier 206 fires. Using this sequence of operations will overwrite data in an enabled row.

A SHIFT operation can be accomplished by multiplexing (“muxing”) two neighboring data line complementary pairs using a traditional DRAM isolation (ISO) scheme. According to embodiments of the present disclosure, the shift circuitry 223 can be used for shifting data values stored in memory cells coupled to a particular pair of complementary data lines to the sensing circuitry 250 (e.g., sense amplifier 206) corresponding to a different pair of complementary data lines (e.g., such as a sense amplifier 206 corresponding to a left or right adjacent pair of complementary data lines. As used herein, a sense amplifier 206 corresponds to the pair of complementary data lines to which the sense amplifier is coupled when isolation transistors 221-1 and 221-2 are conducting. The SHIFT operations (right or left) do not pre-copy the Row X data value into the Comp_Compulator. Operations to shift right Row X can be summarized as follows:

Deactivate Norm and Activate Shift

Deactivate EQ

Open Row X

Fire Sense Amps (after which shifted Row X data resides in the sense amps)

Activate Norm and Deactivate Shift

Close Row X

Precharge

In the pseudo code above, “Deactivate Norm and Activate Shift” indicates that a NORM control signal goes low causing isolation transistors 221-1 and 221-2 of the shift circuitry 223 to not conduct (e.g., isolate the sense amplifier from the corresponding pair of complementary data lines). The SHIFT control signal goes high causing isolation transistors 221-3 and 221-4 to conduct, thereby coupling the sense amplifier 206 to the left adjacent pair of complementary data lines (e.g., on the memory array side of non-conducting isolation transistors 221-1 and 221-2 for the left adjacent pair of complementary data lines).

After the shift circuitry 223 is configured, the “Deactivate EQ,” “Open Row X,” and “Fire Sense Amps” shown in the pseudo code above indicate the same functionality as the same operations in the pseudo code for the “Copy Row X into the Comp_Compulator” initial operation phase described above prior to pseudo code for the AND operation and OR operation. After these operations, the Row X data value for the memory cell coupled to the left adjacent pair of complementary data lines is shifted right and stored in the sense amplifier 206.

In the pseudo code above, “Activate Norm and Deactivate Shift” indicates that a NORM control signal goes high causing isolation transistors 221-1 and 221-2 of the shift circuitry 223 to conduct (e.g., coupling the sense amplifier to the corresponding pair of complementary data lines), and the SHIFT control signal goes low causing isolation transistors 221-3 and 221-4 to not conduct and isolating the sense amplifier 206 from the left adjacent pair of complementary data lines (e.g., on the memory array side of non-conducting isolation transistors 221-1 and 221-2 for the left adjacent pair of complementary data lines). Since Row X is still active, the Row X data value that has been shifted right is transferred to Row X of the corresponding pair of complementary data lines through isolation transistors 221-1 and 221-2.

After the Row X data values are shifted right to the corresponding pair of complementary data lines, the selected row (e.g., ROW X) is disabled as indicated by “Close Row X” in the pseudo code above, which can be accomplished by the access transistor turning off to decouple the selected cell from the corresponding data line. Once the selected row is closed and the memory cell is isolated from the data lines, the data lines can be precharged as indicated by the “Precharge” in the pseudo code above. A precharge of the data lines can be accomplished by an equilibrate operation, as described above.

Operations to shift left Row X can be summarized as follows:

Activate Norm and Deactivate Shift

Deactivate EQ

Open Row X

Fire Sense Amps (after which Row X data resides in the sense amps)

Deactivate Norm and Activate Shift

Sense amplifier data (shifted left Row X) is transferred to Row X

Close Row X

Precharge

In the pseudo code above, “Activate Norm and Deactivate Shift” indicates that a NORM control signal goes high causing isolation transistors 221-1 and 221-2 of the shift circuitry 223 to conduct, and the SHIFT control signal goes low causing isolation transistors 221-3 and 221-4 to not conduct. This configuration couples the sense amplifier 206 to a corresponding pair of complementary data lines and isolates the sense amplifier from the right adjacent pair of complementary data lines.

After the shift circuitry is configured, the “Deactivate EQ,” “Open Row X,” and “Fire Sense Amps” shown in the pseudo code above indicate the same functionality as the same operations in the pseudo code for the “Copy Row X into the Comp_Compulator” initial operation phase described above prior to pseudo code for the AND operation and OR operation. After these operations, the Row X data value for the memory cell coupled to the pair of complementary data lines corresponding to the sense circuitry 250 is stored in the sense amplifier 206.

In the pseudo code above, “Deactivate Norm and Activate Shift” indicates that a NORM control signal goes low causing isolation transistors 221-1 and 221-2 of the shift circuitry 223 to not conduct (e.g., isolate the sense amplifier from the corresponding pair of complementary data lines), and the SHIFT control signal goes high causing isolation transistors 221-3 and 221-4 to conduct coupling the sense amplifier to the left adjacent pair of complementary data lines (e.g., on the memory array side of non-conducting isolation transistors 221-1 and 221-2 for the left adjacent pair of complementary data lines. Since Row X is still active, the Row X data value that has been shifted left is transferred to Row X of the left adjacent pair of complementary data lines.

After the Row X data values are shifted left to the left adjacent pair of complementary data lines, the selected row (e.g., ROW X) is disabled as indicated by “Close Row X,” which can be accomplished by the access transistor turning off to decouple the selected cell from the corresponding data line. Once the selected row is closed and the memory cell is isolated from the data lines, the data lines can be precharged as indicated by the “Precharge” in the pseudo code above. A precharge of the data lines can be accomplished by an equilibrate operation, as described above.

According to various embodiments, general computing can be enabled in a memory array core of a processor-in-memory (PIM) device such as a DRAM one transistor per memory cell (e.g., 1T1C) configuration at 6F{circumflex over ( )}2 or 4F{circumflex over ( )}2 memory cell sizes, for example. The advantage of the apparatuses and methods described herein is not realized in terms of single instruction speed, but rather the cumulative speed that can be achieved by an entire bank of data being computed in parallel without ever transferring data out of the memory array (e.g., DRAM) or firing a column decode. In other words, data transfer time can be eliminated. For example, apparatus of the present disclosure can perform ANDS or ORs simultaneously using data values in memory cells coupled to a data line (e.g., a column of 16K memory cells).

In previous approach sensing circuits where data is moved out for logical operation processing (e.g., using 32 or 64 bit registers), fewer operations can be performed in parallel compared to the apparatus of the present disclosure. In this manner, significantly higher throughput is effectively provided in contrast to conventional configurations involving a central processing unit (CPU) discrete from the memory such that data must be transferred there between. An apparatus and/or methods according to the present disclosure can also use less energy/area than configurations where the CPU is discrete from the memory. Furthermore, an apparatus and/or methods of the present disclosure can improve upon the smaller energy/area advantages since the in-memory-array logical operations save energy by eliminating certain data value transfers.

Although specific embodiments have been illustrated and described herein, those of ordinary skill in the art will appreciate that an arrangement calculated to achieve the same results can be substituted for the specific embodiments shown. This disclosure is intended to cover adaptations or variations of one or more embodiments of the present disclosure. It is to be understood that the above description has been made in an illustrative fashion, and not a restrictive one. Combination of the above embodiments, and other embodiments not specifically described herein will be apparent to those of skill in the art upon reviewing the above description. The scope of the one or more embodiments of the present disclosure includes other applications in which the above structures and methods are used. Therefore, the scope of one or more embodiments of the present disclosure should be determined with reference to the appended claims, along with the full range of equivalents to which such claims are entitled.

In the foregoing Detailed Description, some features are grouped together in a single embodiment for the purpose of streamlining the disclosure. This method of disclosure is not to be interpreted as reflecting an intention that the disclosed embodiments of the present disclosure have to use more features than are expressly recited in each claim. Rather, as the following claims reflect, inventive subject matter lies in less than all features of a single disclosed embodiment. Thus, the following claims are hereby incorporated into the Detailed Description, with each claim standing on its own as a separate embodiment.

Number	Date	Country
102141905	Aug 2011	CN
0214718	Mar 1987	EP
2026209	Feb 2009	EP
H0831168	Feb 1996	JP
2009259193	Mar 2015	JP
10-0211482	Aug 1998	KR
100821616	Apr 2008	KR
10-2010-0134235	Dec 2010	KR
10-2013-0049421	May 2013	KR
485601	May 2002	TW
200532708	Oct 2005	TW
201218070	May 2012	TW
201346724	Nov 2013	TW
2001065359	Sep 2001	WO
2010079451	Jul 2010	WO
2013062596	May 2013	WO
2013081588	Jun 2013	WO
2013095592	Jun 2013	WO

Span mask generation

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CPC

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CPC

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Abstract

Description

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US Referenced Citations (301)

Foreign Referenced Citations (18)

Non-Patent Literature Citations (19)

Related Publications (1)

Number	Name	Date	Kind
4380046	Fung	Apr 1983	A
4435792	Bechtolsheim	Mar 1984	A
4435793	Ochii	Mar 1984	A
4727474	Batcher	Feb 1988	A
4843264	Galbraith	Jun 1989	A
4958378	Bell	Sep 1990	A
4977542	Matsuda et al.	Dec 1990	A
5023838	Herbert	Jun 1991	A
5034636	Reis et al.	Jul 1991	A
5201039	Sakamura	Apr 1993	A
5210850	Kelly et al.	May 1993	A
5253308	Johnson	Oct 1993	A
5276643	Hoffman et al.	Jan 1994	A
5325519	Long et al.	Jun 1994	A
5367488	An	Nov 1994	A
5379257	Matsumura et al.	Jan 1995	A
5386379	Ali-Yahia et al.	Jan 1995	A
5398213	Yeon et al.	Mar 1995	A
5430687	Hung et al.	Jul 1995	A
5440482	Davis	Aug 1995	A
5446690	Tanaka et al.	Aug 1995	A
5473576	Matsui	Dec 1995	A
5481500	Reohr et al.	Jan 1996	A
5485373	Davis et al.	Jan 1996	A
5506811	McLaury	Apr 1996	A
5615404	Knoll et al.	Mar 1997	A
5638128	Hoogenboom	Jun 1997	A
5638317	Tran	Jun 1997	A
5654936	Cho	Aug 1997	A
5678021	Pawate et al.	Oct 1997	A
5724291	Matano	Mar 1998	A
5724366	Furutani	Mar 1998	A
5751987	Mahant-Shetti et al.	May 1998	A
5787458	Miwa	Jul 1998	A
5854636	Watanabe et al.	Dec 1998	A
5867429	Chen et al.	Feb 1999	A
5870504	Nemoto et al.	Feb 1999	A
5915084	Wendell	Jun 1999	A
5935263	Keeth et al.	Aug 1999	A
5953738	Rao	Sep 1999	A
5986942	Sugibayashi	Nov 1999	A
5991209	Chow	Nov 1999	A
5991785	Alidina et al.	Nov 1999	A
6005799	Rao	Dec 1999	A
6009020	Nagata	Dec 1999	A
6092186	Betker et al.	Jul 2000	A
6122211	Morgan et al.	Sep 2000	A
6125071	Kohno et al.	Sep 2000	A
6134164	Lattimore et al.	Oct 2000	A
6147514	Shiratake	Nov 2000	A
6151244	Fujino et al.	Nov 2000	A
6157578	Brady	Dec 2000	A
6163862	Adams et al.	Dec 2000	A
6166942	Vo et al.	Dec 2000	A
6172918	Hidaka	Jan 2001	B1
6175514	Henderson	Jan 2001	B1
6181698	Hariguchi	Jan 2001	B1
6208544	Beadle et al.	Mar 2001	B1
6226215	Yoon	May 2001	B1
6301153	Takeuchi et al.	Oct 2001	B1
6301164	Manning et al.	Oct 2001	B1
6304477	Naji	Oct 2001	B1
6389507	Sherman	May 2002	B1
6418498	Martwick	Jul 2002	B1
6466499	Blodgett	Oct 2002	B1
6510098	Taylor	Jan 2003	B1
6563754	Lien et al.	May 2003	B1
6578058	Nygaard	Jun 2003	B1
6731542	Le et al.	May 2004	B1
6754746	Leung et al.	Jun 2004	B1
6768679	Le et al.	Jul 2004	B1
6785329	Pan	Aug 2004	B1
6807614	Chung	Oct 2004	B2
6816422	Hamade et al.	Nov 2004	B2
6819612	Achter	Nov 2004	B1
6894549	Eliason	May 2005	B2
6943579	Hazanchuk et al.	Sep 2005	B1
6948056	Roth	Sep 2005	B1
6950771	Fan et al.	Sep 2005	B1
6950898	Merritt et al.	Sep 2005	B2
6956770	Khalid et al.	Oct 2005	B2
6961272	Schreck	Nov 2005	B2
6965648	Smith et al.	Nov 2005	B1
6985394	Kim	Jan 2006	B2
6987693	Cernea et al.	Jan 2006	B2
7020017	Chen et al.	Mar 2006	B2
7028170	Saulsbury	Apr 2006	B2
7045834	Tran et al.	May 2006	B2
7054178	Shiah et al.	May 2006	B1
7058880	Ding et al.	Jun 2006	B1
7061817	Raad et al.	Jun 2006	B2
7079407	Dimitrelis	Jul 2006	B1
7173857	Kato et al.	Feb 2007	B2
7187585	Li et al.	Mar 2007	B2
7196928	Chen	Mar 2007	B2
7260565	Lee et al.	Aug 2007	B2
7260672	Garney	Aug 2007	B2
7372715	Han	May 2008	B2
7400532	Aritome	Jul 2008	B2
7406494	Magee	Jul 2008	B2
7447720	Beaumont	Nov 2008	B2
7454451	Beaumont	Nov 2008	B2
7457181	Lee et al.	Nov 2008	B2
7532529	Dadashev et al.	May 2009	B2
7535769	Cernea	May 2009	B2
7546438	Chung	Jun 2009	B2
7562198	Noda et al.	Jul 2009	B2
7574466	Beaumont	Aug 2009	B2
7602647	Li et al.	Oct 2009	B2
7663928	Tsai et al.	Feb 2010	B2
7692466	Ahmadi	Apr 2010	B2
7685365	Rajwar et al.	May 2010	B2
7752417	Manczak et al.	Jul 2010	B2
7791962	Noda et al.	Sep 2010	B2
7796453	Riho et al.	Sep 2010	B2
7805587	Van Dyke et al.	Sep 2010	B1
7808854	Takase	Oct 2010	B2
7827372	Bink et al.	Nov 2010	B2
7869273	Lee et al.	Jan 2011	B2
7898864	Dong	Mar 2011	B2
7924628	Danon et al.	Apr 2011	B2
7937535	Ozer et al.	May 2011	B2
7957206	Bauser	Jun 2011	B2
7979667	Allen et al.	Jul 2011	B2
7996749	Ding et al.	Aug 2011	B2
8042082	Solomon	Oct 2011	B2
8045391	Mokhlesi	Oct 2011	B2
8059438	Chang et al.	Nov 2011	B2
8095825	Hirotsu et al.	Jan 2012	B2
8117462	Snapp et al.	Feb 2012	B2
8164942	Gebara et al.	Apr 2012	B2
8208328	Hong	Jun 2012	B2
8213248	Moon et al.	Jul 2012	B2
8223568	Seo	Jul 2012	B2
8238173	Akerib et al.	Aug 2012	B2
8274841	Shinano et al.	Sep 2012	B2
8279683	Klein	Oct 2012	B2
8310884	Iwai et al.	Nov 2012	B2
8332367	Bhattacherjee et al.	Dec 2012	B2
8339824	Cooke	Dec 2012	B2
8339883	Yu et al.	Dec 2012	B2
8347154	Bahali et al.	Jan 2013	B2
8351292	Matano	Jan 2013	B2
8356144	Hessel et al.	Jan 2013	B2
8417921	Gonion et al.	Apr 2013	B2
8462532	Argyres	Jun 2013	B1
8484276	Carlson et al.	Jul 2013	B2
8495438	Roine	Jul 2013	B2
8503250	Demone	Aug 2013	B2
8526239	Kim	Sep 2013	B2
8533245	Cheung	Sep 2013	B1
8555037	Gonion	Oct 2013	B2
8599613	Abiko et al.	Dec 2013	B2
8605015	Guttag et al.	Dec 2013	B2
8625376	Jung et al.	Jan 2014	B2
8644101	Jun et al.	Feb 2014	B2
8650232	Stortz et al.	Feb 2014	B2
8683183	Sprangle	Mar 2014	B2
8873272	Lee	Oct 2014	B2
8964496	Manning	Feb 2015	B2
8971124	Manning	Mar 2015	B1
9015390	Klein	Apr 2015	B2
9047193	Lin et al.	Jun 2015	B2
9165023	Moskovich et al.	Oct 2015	B2
9235414	Gopal et al.	Jan 2016	B2
9317741	Guigues	Apr 2016	B2
20010007112	Porterfield	Jul 2001	A1
20010008492	Higashiho	Jul 2001	A1
20010010057	Yamada	Jul 2001	A1
20010028584	Nakayama et al.	Oct 2001	A1
20010043089	Forbes et al.	Nov 2001	A1
20020059355	Peleg et al.	May 2002	A1
20030167426	Slobodnik	Sep 2003	A1
20030196030	Elliott et al.	Oct 2003	A1
20030222879	Rong et al.	Dec 2003	A1
20040073592	Kim et al.	Apr 2004	A1
20040073773	Demjanenko	Apr 2004	A1
20040085840	Vali et al.	May 2004	A1
20040095826	Perner	May 2004	A1
20040154002	Ball et al.	Aug 2004	A1
20040205289	Srinivasan	Oct 2004	A1
20040240251	Nozawa et al.	Dec 2004	A1
20050015557	Wang et al.	Jan 2005	A1
20050078514	Scheuerlein et al.	Apr 2005	A1
20050097417	Agrawal et al.	May 2005	A1
20060047937	Selvaggi et al.	Mar 2006	A1
20060069849	Rudelic	Mar 2006	A1
20060146623	Mizuno et al.	Jul 2006	A1
20060149804	Luick et al.	Jul 2006	A1
20060181917	Kang et al.	Aug 2006	A1
20060215432	Wickeraad et al.	Sep 2006	A1
20060225072	Lari et al.	Oct 2006	A1
20060291282	Liu et al.	Dec 2006	A1
20070103986	Chen	May 2007	A1
20070171747	Hunter et al.	Jul 2007	A1
20070180006	Gyoten et al.	Aug 2007	A1
20070180184	Sakashita et al.	Aug 2007	A1
20070195602	Fong et al.	Aug 2007	A1
20070285131	Sohn	Dec 2007	A1
20070285979	Turner	Dec 2007	A1
20070291532	Tsuji	Dec 2007	A1
20080025073	Arsovski	Jan 2008	A1
20080037333	Kim et al.	Feb 2008	A1
20080052711	Forin et al.	Feb 2008	A1
20080137388	Krishnan et al.	Jun 2008	A1
20080178053	Gorman et al.	Jul 2008	A1
20080215937	Dreibelbis et al.	Sep 2008	A1
20080165601	Matick et al.	Dec 2008	A1
20090067218	Graber	Mar 2009	A1
20090154238	Lee	Jun 2009	A1
20090154273	Borot et al.	Jun 2009	A1
20090254697	Akerib	Oct 2009	A1
20100067296	Li	Mar 2010	A1
20100091582	Vali et al.	Apr 2010	A1
20100169382	Sheaffer	Jul 2010	A1
20100172190	Lavi et al.	Jul 2010	A1
20100210076	Gruber et al.	Aug 2010	A1
20100226183	Kim	Sep 2010	A1
20100308858	Noda et al.	Dec 2010	A1
20100332895	Billing et al.	Dec 2010	A1
20110051523	Manabe et al.	Mar 2011	A1
20110063919	Chandrasekhar et al.	Mar 2011	A1
20110093662	Walker et al.	Apr 2011	A1
20110103151	Kim et al.	May 2011	A1
20110119467	Cadambi et al.	May 2011	A1
20110122695	Li et al.	May 2011	A1
20110140741	Zerbe et al.	Jun 2011	A1
20110142419	Zou et al.	Jun 2011	A1
20110219260	Nobunaga et al.	Sep 2011	A1
20110267883	Lee et al.	Nov 2011	A1
20110317496	Bunce et al.	Dec 2011	A1
20120005397	Lim et al.	Jan 2012	A1
20120017039	Margetts	Jan 2012	A1
20120023281	Kawasaki et al.	Jan 2012	A1
20120120705	Mitsubori et al.	May 2012	A1
20120134216	Singh	May 2012	A1
20120134226	Chow	May 2012	A1
20120135225	Chow	May 2012	A1
20120140540	Agam et al.	Jun 2012	A1
20120182798	Hosono et al.	Jul 2012	A1
20120195146	Jun et al.	Aug 2012	A1
20120198310	Tran et al.	Aug 2012	A1
20120246380	Akerib et al.	Sep 2012	A1
20120265964	Murata et al.	Oct 2012	A1
20120281486	Rao et al.	Nov 2012	A1
20120303627	Keeton et al.	Nov 2012	A1
20130003467	Klein	Jan 2013	A1
20130061006	Hein	Mar 2013	A1
20130107623	Kavalipurapu et al.	May 2013	A1
20130117541	Choquette et al.	May 2013	A1
20130124783	Yoon et al.	May 2013	A1
20130132702	Patel et al.	May 2013	A1
20130138646	Sirer et al.	May 2013	A1
20130163362	Kim	Jun 2013	A1
20130173888	Hansen et al.	Jul 2013	A1
20130205114	Badam et al.	Aug 2013	A1
20130219112	Okin et al.	Aug 2013	A1
20130227361	Bowers et al.	Aug 2013	A1
20130283122	Anholt et al.	Oct 2013	A1
20130286705	Grover et al.	Oct 2013	A1
20130326154	Haswell	Dec 2013	A1
20130332707	Gueron et al.	Dec 2013	A1
20140032848	Zhao	Jan 2014	A1
20140185395	Seo	Jul 2014	A1
20140215185	Danielsen	Jul 2014	A1
20140247673	Muralimanohar et al.	Sep 2014	A1
20140250279	Manning	Sep 2014	A1
20140281371	Thantry et al.	Sep 2014	A1
20140344934	Jorgensen	Nov 2014	A1
20150029798	Manning	Jan 2015	A1
20150042380	Manning	Feb 2015	A1
20150063052	Manning	Mar 2015	A1
20150078108	Cowles et al.	Mar 2015	A1
20150089166	Kogge	Mar 2015	A1
20150279466	Manning	Mar 2015	A1
20150120987	Wheeler	Apr 2015	A1
20150134713	Wheeler	May 2015	A1
20150270015	Murphy et al.	Sep 2015	A1
20150324290	Leidel	Nov 2015	A1
20150325272	Murphy	Nov 2015	A1
20150356009	Wheeler et al.	Dec 2015	A1
20150356022	Leidel et al.	Dec 2015	A1
20150357007	Manning et al.	Dec 2015	A1
20150357008	Manning et al.	Dec 2015	A1
20150357019	Wheeler et al.	Dec 2015	A1
20150357020	Manning	Dec 2015	A1
20150357021	Hush	Dec 2015	A1
20150357022	Hush	Dec 2015	A1
20150357023	Hush	Dec 2015	A1
20150357024	Hush et al.	Dec 2015	A1
20150357047	Tiwari	Dec 2015	A1
20150379185	Morisaki	Dec 2015	A1
20160062672	Wheeler	Mar 2016	A1
20160062673	Tiwari	Mar 2016	A1
20160062692	Finkbeiner et al.	Mar 2016	A1
20160062733	Tiwari	Mar 2016	A1
20160063284	Tiwari	Mar 2016	A1
20160064045	La Fratta	Mar 2016	A1
20160064047	Tiwari	Mar 2016	A1
20160170936	Sun	Jun 2016	A1
20160267951	Tiwari	Sep 2016	A1

Entry
Warren Jr., Henry S., “Hacker's Delight”, Second Edition, Oct. 2013, pp. 181-184 and 194.
Elliot, et al., “Computational RAM: Implementing Processors in Memory”, Jan.-Mar. 1999, (10 pgs.), vol. 16, Issue 1, IEEE Design and Test of Computers Magazine.
“4.9.3 MINLOC and MAXLOC”, Jun. 12, 1995, (5pgs.), Message Passing Interface Forum 1.1, retrieved from http://www.mpi-forum.org/docs/mpi-1.1/mpi-11-html/node79.html.
Stojmenovic, “Multiplicative Circulant Networks Topological Properties and Communication Algorithms”, (25 pgs.), Discrete Applied Mathematics 77 (1997) 281-305.
Boyd et al., “On the General Applicability of Instruction-Set Randomization”, Jul.-Sep. 2010, (14 pgs.), vol. 7, Issue 3, IEEE Transactions on Dependable and Secure Computing.
Dybdahl, et al., “Destructive-Read in Embedded DRAM, Impact on Power Consumption,” Apr. 2006, (10 pgs.), vol. 2, Issue 2, Journal of Embedded Computing-Issues in embedded single-chip multicore architectures.
Kogge, et al., “Processing in Memory: Chips to Petaflops,” May 23, 1997, (8 pgs.), retrieved from: http://www.cs.ucf.edu/courses/cda5106/summer02/papers/kogge97PIM.pdf.
Draper, et al., “The Architecture of the DIVA Processing-In-Memory Chip,” Jun. 22-26, 2002, (12 pgs.), ICS '02, retrieved from: http://www.isi.edu/˜draper/papers/ics02.pdf.
Adibi, et al., “Processing-In-Memory Technology for Knowledge Discovery Algorithms,” Jun. 25, 2006, (10 pgs.), Proceeding of the Second International Workshop on Data Management on New Hardware, retrieved from: http://www.cs.cmu.edu/˜damon2006/pdf/adibi06inmemory.pdf.
U.S. Appl. No. 13/449,082, entitled, “Methods and Apparatus for Pattern Matching,” filed Apr. 17, 2012, (37 pgs.).
U.S. Appl. No. 13/743,686, entitled, “Weighted Search and Compare in a Memory Device,” filed Jan. 17, 2013, (25 pgs).
U.S. Appl. No. 13/774,636, entitled, “Memory as a Programmable Logic Device,” filed Feb. 22, 2013, (30 pgs.).
U.S. Appl. No. 13/774,553, entitled, “Neural Network in a Memory Device,” filed Feb. 22, 2013, (63 pgs.).
U.S. Appl. No. 13/796,189, entitled, “Performing Complex Arithmetic Functions in a Memory Device,” filed Mar. 12, 2013, (23 pgs.).
International Search Report and Written Opinion for PCT Application No. PCT/US2013/043702, dated Sep. 26, 2013, (11 pgs.).
Pagiamtzis, et al., “Content-Addressable Memory (CAM) Circuits and Architectures: A Tutorial and Survey”, Mar. 2006, (16 pgs.), vol. 41, No. 3, IEEE Journal of Solid-State Circuits.
Pagiamtzis, Kostas, “Content-Addressable Memory Introduction”, Jun. 25, 2007, (6 pgs.), retrieved from: http://www.pagiamtzis.com/cam/camintro.
Debnath, Biplob, Bloomflash: Bloom Filter on Flash-Based Storage, 2011 31st Annual Conference on Distributed Computing Systems, Jun. 20-24, 2011, 10 pgs.
Derby, et al., “A High-Performance Embedded DSP Core with Novel SIMD Features”, Apr. 6-10, 2003, (4 pgs), vol. 2, pp. 301-304, 2003 IEEE International Conference on Accoustics, Speech, and Signal Processing.