Claims
- 1. A method of manufacturing a sputtering target comprising a metal silicide of a stoichiometric composition expressed by MSi.sub.2 where M represents a metal coupled in link form so as to provide a metal silicide phase having gaps and a Si phase made of Si grains dispersed in the gaps of the silicide phase discontinuously so as to provide a compact mixed structure of the target, the compact mixed structure having a carbon content of less than 100 ppm, said method comprising:
- I. a step of mixing metal powder M and Si powder Si at a Si/M atom ratio ranging from 2.0 to 4.0 so as to form a mixed powder;
- II. a step of filling the mixed powder obtained in step I in a mold, and heating the mixed powder in a vacuum of less than 10.sup.-4 Torr at a temperature of from 1000.degree. to 1300.degree. C. to reduce carbon and oxygen amounts in the mixed powder;
- III. a step wherein the heated and degassed mixed powder obtained in step II is heated in a vacuum of less than 10.sup.-4 Torr and under a press-pressure of from 10 to 100 Kg/cm.sup.2 to execute synthesis and sintering of the metal silicide; and
- IV. a step where the material obtained in step III. is further heated in a vacuum of less than 10.sup.-4 Torr or an inert gas and under a press-pressure of from 100-300 Kg/cm.sup.2 to a temperature T, wherein T.sub.s -50.ltoreq.T<T.sub.s where T.sub.s is the eutectic temperature in .degree. C., to promote compactness of the target.
- 2. The sputtering target manufacturing method according to claim 1 wherein the metal powder used in this method is a metal powder having maximum grain diameter less than 10 .mu.m, wherein the Si powder is a Si powder having maximum grain diameter less than 30 .mu.m.
- 3. The manufacturing method according to claim 1 wherein the mixed powder made of metal powder (m) and Si powder Si is subjected to a reaction, melting and sintering process, so that silicide synthesis, sintering and tightening of structure are carried out simultaneously.
- 4. The manufacturing method according to claim 3 wherein said reaction, melting and sintering process is executed by use of a hot-press method or a hot isostatic press method.
- 5. The manufacturing method according to claim 2, wherein said metal powder and said Si powder are high purity powders having a purity of at least 99.999%.
- 6. The manufacturing method according to claim 1, wherein:
- in step II the mixed powder is heated at a temperature of from 1100.degree.-1300.degree. C. for from 1 to 10 hours;
- in step III the heated and degassed mixed powder obtained in step II is heated to a temperature of from 1100.degree.-1300.degree. C. and the press-pressure is from 30-60 Kg/cm.sup.2 ; and
- in step IV the press-pressure is from 150-250 Kg/cm.sup.2.
Priority Claims (1)
Number |
Date |
Country |
Kind |
2-123054 |
May 1990 |
JPX |
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Parent Case Info
This is a division of application Ser. No. 07/793,384 filed on Mar. 13, 1992, now U.S. Pat. No. 5,409,517, which was filed as International Application No. PCT/JP91/00639 on May 15, 1991.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
4941920 |
Inui et al. |
Jul 1990 |
|
5002728 |
Achikita et al. |
Mar 1991 |
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Divisions (1)
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Number |
Date |
Country |
Parent |
793384 |
Mar 1992 |
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