Claims
- 1. A sputtering target formed of refractory metallic silicide having a composition MSi.sub.x, said MSi.sub.x comprising:
- an MSi.sub.2 phase in the form of particles where M is at least one refractory metal selected from the group consisting of tungsten, molybdenum, titanium, zirconium, hafnium, niobium and tantalum;
- an Si phase provided as a matrix phase; and
- an interface layer, comprised of at least one element selected from the group consisting of B, P, Sb and As collected by diffusion from the Si phase and having a predetermined thickness of at least 100 .ANG., provided between the MSi.sub.2 phase and the Si phase.
- 2. A sputtering target according to claim 1, wherein a value X of the composition formula MSi.sub.x ranges from 2.0 to 4.0.
- 3. A sputtering target according to claim 1, wherein a thickness of the interface layers formed at the interfaces between the MSi.sub.2 phase and the Si phase ranges from 100 to 5000 .ANG..
- 4. A sputtering target according to claim 1, wherein a spatial dispersion of the composition formula MSi.sub.x is within a range of .+-.0.05 in terms of Si/M atomic ratio, and a density ratio of the target is equal to or larger than 99%.
- 5. A sputtering target according to claim 1, wherein the Si phase contains at least one element selected from a group consisting of B, P, Sb and As, and has an electrical resistivity of 0.01 to 1 .OMEGA..multidot.cm.
- 6. A sputtering target according to claim 1, wherein a roughness of a surface portion of the sputtering target expressed as center line roughness (Ra) is equal to or less than 0.05 .mu.m.
- 7. A sputtering target according to claim 1, wherein a residual compressive stress in a surface portion of said target is equal to or less than 5 kg/mm.sup.2.
- 8. A sputtering target according to claim 1, wherein said target is in the form of a plate and is formed of refractory metallic silicide expressed by a composition formula MSi.sub.x, said target having a composition distribution such that a value X increases from a peripheral portion of the target toward a center of the same.
- 9. A sputtering target according to claim 1, wherein the composition is set in such a manner that a value X of the composition formula MSi.sub.x continuously changes within a range of 2.0 to 4.0.
- 10. A sputtering target according to claim 1, wherein the target is formed of refractory metallic silicide expressed by a composition formula MSi.sub.x, said target having a composition distribution such that a value X ranges from 2.0 to 4.0 and continuously decreases from a portion of a region eroded by sputtering toward a periphery of the same.
Priority Claims (5)
Number |
Date |
Country |
Kind |
63-322423 |
Dec 1988 |
JPX |
|
63-325310 |
Dec 1988 |
JPX |
|
63-328441 |
Dec 1988 |
JPX |
|
1-194344 |
Jul 1989 |
JPX |
|
1-194346 |
Jul 1989 |
JPX |
|
Parent Case Info
This application is a continuation of application Ser. No. 07/769,168, filed on Sep. 30, 1991, now abandoned, which was a continuation of Ser. No. 07/454,393, filed on Dec. 21, 1989, now abandoned.
US Referenced Citations (3)
Number |
Name |
Date |
Kind |
4424101 |
Nowicki |
Jan 1984 |
|
4619697 |
Hijikata et al. |
Oct 1986 |
|
4663120 |
Parent et al. |
May 1987 |
|
Foreign Referenced Citations (2)
Number |
Date |
Country |
61-179534 |
Jan 1985 |
JPX |
63-219580 |
Mar 1987 |
JPX |
Non-Patent Literature Citations (1)
Entry |
"Self-burning sintering method" Y. Miyamoto, Functional Material 8 (1) Jan., 1989. |
Continuations (2)
|
Number |
Date |
Country |
Parent |
769168 |
Sep 1991 |
|
Parent |
454393 |
Dec 1989 |
|