Number | Date | Country | Kind |
---|---|---|---|
2191260 | Nov 1996 | CAX |
Number | Name | Date | Kind |
---|---|---|---|
5232871 | Huei-Min | Aug 1993 | |
5747361 | Ouellet | May 1998 | |
5895266 | Fu et al. | Feb 1996 |
Number | Date | Country |
---|---|---|
0 680 077 | Nov 1995 | EPX |
0 738 002 | Oct 1996 | EPX |
0 776 033 | May 1997 | EPX |
0 791 663 | Aug 1997 | EPX |
Entry |
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Dixit G A et al: "Reactively Sputtered Titanium Nitride Films for Submicron Contact Barrier Metallization" Applied Physics Letters, vol. 62, No. 4, Jan. 25, 1993, pp. 357-359, XP000335994 see whole document relevant to Claim 1, 10, 12. |
Patent Abstracts of Japan vol. 096, No. 009, Sep. 30, 1996 & JP 08 130302 A (Toshiba Corp.) May 21, 1996 see Abstract. |