Claims
- 1. A method of forming a feature on a substrate, comprising:a) depositing a barrier/wetting layer over the surfaces of an aperture in the substrate; b) physical vapor depositing a conformal first metal layer over the surface of the barrier/wetting layer without capping or filling the aperture at a chamber pressure less than about 1 milliTorr; and c) physical vapor depositing a second metal layer on the conformal first metal layer at a temperature below about 350° C.
- 2. The method of claim 1, further comprising reflowing the second metal layer.
- 3. The method of claim 2, wherein the second metal layer is reflowed at a temperature less than about 500° C.
- 4. The method of claim 2, wherein the conformal first metal layer is deposited at about room temperature.
- 5. The method of claim 4, wherein the conformal first metal layer is sputtered at a chamber pressure less than about 0.35 milliTorr.
- 6. The method of claim 4, wherein a) through c) are performed sequentially in an integrated processing system.
- 7. The method of claim 4, wherein a) through c) are performed in separate chambers.
- 8. The method of claim 4, wherein the conformal first metal layer is formed by sputtering from a target located at least 100 mm away from the substrate.
- 9. The method of claim 8, wherein the conformal first metal layer has a thickness between about 200 Angstroms and about 1 micron.
- 10. The method of claim 9, wherein the conformal first metal layer and the second metal layer comprise aluminum or copper.
- 11. The method of claim 1, wherein the conformal first metal layer is deposited at about room temperature.
- 12. The method of claim 11, wherein the conformal first metal layer is formed by sputtering from a target located at least 100 mm from the substrate.
- 13. The method of claim 12, further comprising reflowing the second metal layer at a temperature less than about 500° C.
- 14. The method of claim 1, wherein the barrier/wetting layer is selected from a group consisting of tungsten (W), niobium (Nb), aluminum silicates, tantalum (Ta), titanium (Ti), tantalum nitride (TaN), titanium nitride (TiN), PVD Ti/N2-stuffed, TiSiN, WSiN, and combinations thereof.
- 15. The method of claim 1, wherein the conformal first metal layer is not exposed to air prior to filling the aperture.
- 16. The method of claim 15, wherein a) through c) are performed sequentially in an integrated processing system.
- 17. The method of claim 15, wherein a) through c) are performed in separate chambers.
- 18. A process for filling a via, trench, or dual damascene structure on a substrate, comprising:depositing a conformal barrier/wetting layer on the substrate; depositing a conformal metal layer over the barrier/wetting layer at a chamber pressure less than about 1 milliTorr; depositing a PVD metal layer on the conformal metal layer at a temperature below about 350° C.; and reflowing the PVD metal layer.
- 19. The process of claim 18, wherein the PVD metal layer is reflowed at a temperature less than 500° C.
- 20. The process of claim 19, wherein the conformal metal layer has a blanket thickness from about 200 Angstroms to about 1 micron.
- 21. The process of claim 20, wherein the barrier/wetting layer has a thickness from about 5 Angstroms to about 700 Angstroms.
- 22. The process of claim 21, wherein the barrier/wetting layer is selected from a group consisting of tungsten (W), niobium (Nb), aluminum silicates, tantalum (Ta), titanium (Ti), tantalum nitride (TaN), titanium nitride (TiN), PVD Ti/N2-stuffed, TiSiN, WSIN, and combinations thereof.
- 23. The process of claim 18, wherein the conformal metal layer is deposited using physical vapor deposition.
- 24. The process of claim 23, wherein the conformal metal layer is deposited at about room temperature.
- 25. The process of claim 24, wherein the conformal metal layer is sputtered from a target located at least 100 mm from the substrate.
- 26. The process of claim 25, wherein the PVD metal layer is deposited using a power greater than about 10 kw.
- 27. A controller for a multi-chamber processing apparatus for performing physical vapor deposition processes, wherein the controller contains programming which, when executed, configures the controller to perform operations of forming a feature on a substrate, the operations comprising:depositing a barrier/wetting layer over the surfaces of an aperture in the substrate; physical vapor depositing a conformal first metal layer over the surface of the barrier/wetting layer without capping or filling the aperture at a chamber pressure less than about 1 milliTorr; and physical vapor depositing a second metal layer on the conformal first metal layer at a temperature below about 350° C.
- 28. The controller of claim 27, wherein the operations further comprises reflowing the second metal layer.
- 29. The controller of claim 28, wherein reflowing the second metal layer occurs at a temperature less than about 500° C.
- 30. The controller of claim 28, wherein depositing the conformal first metal layer occurs at about room temperature.
- 31. The controller of claim 30, wherein depositing the conformal first metal layer occurs at a chamber pressure less than about 0.35 milliTorr.
- 32. The controller of claim 30, wherein the conformal first metal layer is deposited using a target to substrate spacing greater than about 100 mm.
- 33. The controller of claim 32, wherein the conformal first metal layer has a thinkness between about 200 Angstroms and about 1 micron.
- 34. The controller of claim 30, wherein the operations are performed sequentially in an integrated processing system.
- 35. The controller of claim 30, wherein the conformal first metal layer and the second metal layer comprise aluminum or copper.
CROSS-REFERENCE TO RELATED APPLICATIONS
This application is a continuation of U.S. patent application Ser. No. 09/340,977, filed Jun. 28, 1999, now U.S. Pat. No. 6,352,620 B2, entitled “Staged Aluminum Deposition Process for Filling Vias,” which is herein incorporated by reference.
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Continuations (1)
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Number |
Date |
Country |
Parent |
09/340977 |
Jun 1999 |
US |
Child |
10/038199 |
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US |