Number | Date | Country | Kind |
---|---|---|---|
22538 A/80 | Jun 1980 | ITX |
Number | Name | Date | Kind |
---|---|---|---|
4087795 | Rossler | May 1978 | |
4132904 | Harari | Jan 1979 | |
4257056 | Shum | Mar 1981 | |
4300212 | Simko | Nov 1981 |
Number | Date | Country |
---|---|---|
2931031 | Feb 1980 | DEX |
55-52592 | Apr 1980 | JPX |
2073488 | Oct 1981 | GBX |
Entry |
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IEEE Journal of Solid-State Circuits, vol. SC-14, No. 2, Apr. 1979, pp. 498-508, An Electrically Alterable, Nonvolatile Memory Cell Using a Floating-Gate Structure, Guterman et al. |
IBM Technical Disclosure Bulletin, vol. 23, No. 1, Jun. 1980, pp. 227-228, Double Polysilicon Electrically Alterable Read-Only Structure Cell, Hsieh et al. |