of field-effect transistors with insulated gate

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H01L29/0847

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/0847of field-effect transistors with insulated gate

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Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,315,864
- Issue date May 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Chi Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure and method for manufacturing the same
- Patent number 12,315,861
- Issue date May 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Ling Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,308,371
- Issue date May 20, 2025
- NATIONAL TAIWAN UNIVERSITY
- Fang-Liang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor including downward extending silicide
- Patent number 12,300,723
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jung-Chien Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate device with air gap spacer and fabrication methods thereof
- Patent number 12,300,720
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Pei-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 12,300,728
- Issue date May 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sai-Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having doped epitaxial region and its methods...
- Patent number 12,294,027
- Issue date May 6, 2025
- Intel Corporation
- Anand S. Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having insulator subs...
- Patent number 12,294,006
- Issue date May 6, 2025
- Intel Corporation
- Chung-Hsun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gap patterning for metal-to-source/drain plugs in a semiconductor d...
- Patent number 12,293,947
- Issue date May 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures having wells with protruding sections for...
- Patent number 12,288,784
- Issue date Apr 29, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yung Feng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High aspect ratio source or drain structures with abrupt dopant pro...
- Patent number 12,288,808
- Issue date Apr 29, 2025
- Intel Corporation
- Ryan Keech
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having insulator fin...
- Patent number 12,288,813
- Issue date Apr 29, 2025
- Intel Corporation
- Aaron D. Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including top-gate bottom-contact transistor
- Patent number 12,288,824
- Issue date Apr 29, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin bending reduction through structure design
- Patent number 12,288,721
- Issue date Apr 29, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- De-Wei Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Amorphization and regrowth of source-drain regions from the bottom-...
- Patent number 12,288,807
- Issue date Apr 29, 2025
- Intel Corporation
- Aaron Lilak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Backside contact structures and fabrication for metal on both sides...
- Patent number 12,288,810
- Issue date Apr 29, 2025
- Intel Corporation
- Patrick Morrow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having tipless epitaxial source/drain regions
- Patent number 12,288,821
- Issue date Apr 29, 2025
- Intel Corporation
- Mark T. Bohr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with doped structure
- Patent number 12,288,809
- Issue date Apr 29, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Miao-Syuan Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and formation method of semiconductor device with epitaxi...
- Patent number 12,283,610
- Issue date Apr 22, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Tai Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with isolation structure
- Patent number 12,278,235
- Issue date Apr 15, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shi-Ning Ju
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and stack of semiconductor chips
- Patent number 12,279,408
- Issue date Apr 15, 2025
- Samsung Electronics Co., Ltd.
- Shaofeng Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field-effect transistor and method of forming the same
- Patent number 12,278,277
- Issue date Apr 15, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Sheng-Liang Pan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with helmet structure between two semiconducto...
- Patent number 12,278,236
- Issue date Apr 15, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Cheng Ching
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,278,233
- Issue date Apr 15, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-fin FINFET device including epitaxial growth barrier on outsi...
- Patent number 12,278,234
- Issue date Apr 15, 2025
- Bell Semiconductor, LLC
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming semiconductor memory device
- Patent number 12,274,077
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Chih Wen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming contact features in field-effect transistors
- Patent number 12,272,605
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yi-Hsiung Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor level interconnection methodologies utilizing 3D interco...
- Patent number 12,272,730
- Issue date Apr 8, 2025
- Adeia Semiconductor Inc.
- Javier A. Delacruz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having embedded GeSnB...
- Patent number 12,272,727
- Issue date Apr 8, 2025
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device for source/drain backside contact and method of f...
- Patent number 12,272,733
- Issue date Apr 8, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Hsiu Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20250072077
- Publication date Feb 27, 2025
- United Semiconductor (Xiamen) Co., Ltd.
- Wei-Chun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN ISOLATION OF TOP AND BOTTOM TIERS OF 3D FIELD-EFFECT T...
- Publication number 20250072098
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- Mehdi Saremi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE AND METHOD TO REDUCE MG TO SD CAPACITANCE BY AN AIR GAP BETW...
- Publication number 20250072052
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- Chun Yi CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED BODY TIED TO SOURCE LOW NOISE AMPLIFIER DEVICE
- Publication number 20250072059
- Publication date Feb 27, 2025
- QUALCOMM Incorporated
- Ravi Pramod Kumar VEDULA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH DECREASED SOURCE AND DRAIN RESISTANCE AND...
- Publication number 20250072061
- Publication date Feb 27, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Zijin YAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH ISOLATED SOURCE/DRAINS AND METHOD
- Publication number 20250072065
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jung-Hung CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH HYBRID SUBSTRATE AND MANUFACTURING METHOD...
- Publication number 20250072037
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Lun Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
- Publication number 20250072070
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- Chen An Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR CELL AND STRUCTURE THEREOF
- Publication number 20250072108
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Yao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESSED VIA WITH CONDUCTIVE LINK TO ADJACENT CONTACT
- Publication number 20250072069
- Publication date Feb 27, 2025
- Intel Corporation
- Leonard P. Guler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...
- Publication number 20250072078
- Publication date Feb 27, 2025
- Intel Corporation
- Andrew W. YEOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250072080
- Publication date Feb 27, 2025
- UNITED MICROELECTRONICS CORP.
- Chang-Yih Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING DISCHARGING PATH AND METHODS O...
- Publication number 20250063825
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- JAEHONG LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250063781
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Shiang HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCAL TRAPPED METAL CONTACT FOR STACKED FET
- Publication number 20250063795
- Publication date Feb 20, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTORS HAVING VERTICALLY STACKED NANO-SHEET
- Publication number 20250063809
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wang-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND METHODS FOR FORMING DEVICES WITH INNER SPACERS
- Publication number 20250063779
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che-Lun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURE FOR SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20250063783
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yan-Ming Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME
- Publication number 20250063772
- Publication date Feb 20, 2025
- Industrial Technology Research Institute
- Po-Chun Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE INCLUDING WIMPY TRANSISTOR STACK WITH THI...
- Publication number 20250063782
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Panjae PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20250063788
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Sang Min CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPECIALIZED TRANSISTORS
- Publication number 20250063791
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT GATE ISOLATION
- Publication number 20250063792
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jia-Chuan YOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20250056840
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250056861
- Publication date Feb 13, 2025
- Samsung Electronics Co., Ltd.
- SOOJIN JEONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN REGIONS IN COMPLEMENTARY FIELD EFFECT TRANSISTORS AND...
- Publication number 20250056852
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE/NANOSHEET DEVICE WITH CRYSTAL SPACER AND METHOD OF MANUFAC...
- Publication number 20250056850
- Publication date Feb 13, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH FLUSH SOURCE/DRAIN...
- Publication number 20250056824
- Publication date Feb 13, 2025
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH OFFSET SOURCE/DRAI...
- Publication number 20250056825
- Publication date Feb 13, 2025
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE THAT INCLUDES A MULTI-BRIDGE CHANNEL FIELD EFF...
- Publication number 20250056843
- Publication date Feb 13, 2025
- Samsung Electronics Co., Ltd.
- Jong Min SHIN
- H01 - BASIC ELECTRIC ELEMENTS

of field-effect transistors with insulated gate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method of manufacturing a semiconductor device and a semiconductor...

Integrated circuit structure and method for manufacturing the same

Semiconductor device and manufacturing method thereof

Transistor including downward extending silicide

Multi-gate device with air gap spacer and fabrication methods thereof

Semiconductor devices

Semiconductor device having doped epitaxial region and its methods...

Gate-all-around integrated circuit structures having insulator subs...

Gap patterning for metal-to-source/drain plugs in a semiconductor d...

Semiconductor structures having wells with protruding sections for...

High aspect ratio source or drain structures with abrupt dopant pro...

Gate-all-around integrated circuit structures having insulator fin...

Semiconductor device including top-gate bottom-contact transistor

Fin bending reduction through structure design

Amorphization and regrowth of source-drain regions from the bottom-...

Backside contact structures and fabrication for metal on both sides...

Semiconductor device having tipless epitaxial source/drain regions

Semiconductor device with doped structure

Structure and formation method of semiconductor device with epitaxi...

Semiconductor device with isolation structure

Semiconductor device and stack of semiconductor chips

Fin field-effect transistor and method of forming the same

Semiconductor device with helmet structure between two semiconducto...

Semiconductor device and manufacturing method thereof

Multi-fin FINFET device including epitaxial growth barrier on outsi...

Method of forming semiconductor memory device

Methods of forming contact features in field-effect transistors

Transistor level interconnection methodologies utilizing 3D interco...

Gate-all-around integrated circuit structures having embedded GeSnB...

Transistor device for source/drain backside contact and method of f...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SOURCE/DRAIN ISOLATION OF TOP AND BOTTOM TIERS OF 3D FIELD-EFFECT T...

DEVICE AND METHOD TO REDUCE MG TO SD CAPACITANCE BY AN AIR GAP BETW...

ENHANCED BODY TIED TO SOURCE LOW NOISE AMPLIFIER DEVICE

SEMICONDUCTOR DEVICE WITH DECREASED SOURCE AND DRAIN RESISTANCE AND...

FIELD EFFECT TRANSISTOR WITH ISOLATED SOURCE/DRAINS AND METHOD

SEMICONDUCTOR DEVICE WITH HYBRID SUBSTRATE AND MANUFACTURING METHOD...

SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

CAPACITOR CELL AND STRUCTURE THEREOF

RECESSED VIA WITH CONDUCTIVE LINK TO ADJACENT CONTACT

HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

INTEGRATED CIRCUIT DEVICES INCLUDING DISCHARGING PATH AND METHODS O...

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

LOCAL TRAPPED METAL CONTACT FOR STACKED FET

FIN FIELD EFFECT TRANSISTORS HAVING VERTICALLY STACKED NANO-SHEET

DEVICES AND METHODS FOR FORMING DEVICES WITH INNER SPACERS

CONTACT STRUCTURE FOR SEMICONDUCTOR DEVICE AND METHOD

SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME

INTEGRATED CIRCUIT DEVICE INCLUDING WIMPY TRANSISTOR STACK WITH THI...

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SPECIALIZED TRANSISTORS

CONTACT GATE ISOLATION

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE

SOURCE/DRAIN REGIONS IN COMPLEMENTARY FIELD EFFECT TRANSISTORS AND...

NANOWIRE/NANOSHEET DEVICE WITH CRYSTAL SPACER AND METHOD OF MANUFAC...

METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH FLUSH SOURCE/DRAIN...

METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH OFFSET SOURCE/DRAI...

SEMICONDUCTOR DEVICE THAT INCLUDES A MULTI-BRIDGE CHANNEL FIELD EFF...