of field-effect transistors with insulated gate

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H01L29/0847

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/0847of field-effect transistors with insulated gate

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Source/drain epitaxial layers for transistors
- Patent number 12,243,931
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Min Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon phosphide semiconductor device
- Patent number 12,243,784
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Ching Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact-over-active-gate transistor structures with contacts landed...
- Patent number 12,243,923
- Issue date Mar 4, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fin end spacer dummy gate and method of m...
- Patent number 12,243,930
- Issue date Mar 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kai-Tai Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for fabricating the same
- Patent number 12,237,398
- Issue date Feb 25, 2025
- United Microelectronics Corp.
- Chia-Ming Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Minimizing shorting between FinFET epitaxial regions
- Patent number 12,237,328
- Issue date Feb 25, 2025
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for increasing germanium concentration of surfaces of a sil...
- Patent number 12,237,404
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Che-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming semiconductor devices
- Patent number 12,237,402
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shu-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device having increased forward biased safe operating area using so...
- Patent number 12,230,686
- Issue date Feb 18, 2025
- Infineon Technologies Americas Corp.
- Praveen Shenoy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and methods of forming the same
- Patent number 12,230,713
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chia-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Word line structure of three-dimensional memory device
- Patent number 12,232,320
- Issue date Feb 18, 2025
- Yangtze Memory Technologies Co., Ltd.
- Qiang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit with continuous active region and raised source/...
- Patent number 12,230,684
- Issue date Feb 18, 2025
- Samsung Electronics Co., Ltd.
- Jinha Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method therefor
- Patent number 12,230,693
- Issue date Feb 18, 2025
- CSMC Technologies Fab2 Co., Ltd.
- Nailong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making nanostructure transistors with source/drain trenc...
- Patent number 12,230,694
- Issue date Feb 18, 2025
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming micro interconnect struc...
- Patent number 12,230,559
- Issue date Feb 18, 2025
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Francis J. Carney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Body tie optimization for stacked transistor amplifier
- Patent number 12,231,087
- Issue date Feb 18, 2025
- pSemi Corporation
- Simon Edward Willard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radiation hardened high voltage superjunction MOSFET
- Patent number 12,230,674
- Issue date Feb 18, 2025
- IceMos Technology Limited
- Kiraneswar Muthuseenu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS with field plates
- Patent number 12,230,710
- Issue date Feb 18, 2025
- ABLIC INC.
- Shinichirou Wada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked transistors with different channel widths
- Patent number 12,230,544
- Issue date Feb 18, 2025
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including insulated gate bipolar transistor
- Patent number 12,224,316
- Issue date Feb 11, 2025
- Infineon Technologies Austria AG
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact architecture for capacitance reduction and satisfactory con...
- Patent number 12,224,326
- Issue date Feb 11, 2025
- Intel Corporation
- Rishabh Mehandru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned gate endcap (SAGE) architectures with gate-all-around...
- Patent number 12,224,350
- Issue date Feb 11, 2025
- Intel Corporation
- Biswajeet Guha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide thin film transistor, display panel and preparation method th...
- Patent number 12,224,354
- Issue date Feb 11, 2025
- WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
- Ding Ding
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, and method for manufacturing semiconductor de...
- Patent number 12,218,237
- Issue date Feb 4, 2025
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Yuki Yanagisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source/drain regions of FinFET devices and methods of forming same
- Patent number 12,218,240
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Kun-Mu Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated chip with a gate structure disposed within a trench
- Patent number 12,219,770
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yong-Sheng Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor devices with multiple silicid...
- Patent number 12,218,012
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Yip Loh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanostructures formed over a substrate and a gate structure wrappin...
- Patent number 12,218,218
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi-Ruei Jhan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 12,218,046
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Eui Bok Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a field effect transistor using carbon nano...
- Patent number 12,218,198
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Matthias Passlack
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DEVICE AND METHOD TO REDUCE MG TO SD CAPACITANCE BY AN AIR GAP BETW...
- Publication number 20250072052
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- Chun Yi CHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED BODY TIED TO SOURCE LOW NOISE AMPLIFIER DEVICE
- Publication number 20250072059
- Publication date Feb 27, 2025
- QUALCOMM Incorporated
- Ravi Pramod Kumar VEDULA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20250072077
- Publication date Feb 27, 2025
- United Semiconductor (Xiamen) Co., Ltd.
- Wei-Chun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN ISOLATION OF TOP AND BOTTOM TIERS OF 3D FIELD-EFFECT T...
- Publication number 20250072098
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- Mehdi Saremi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH DECREASED SOURCE AND DRAIN RESISTANCE AND...
- Publication number 20250072061
- Publication date Feb 27, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Zijin YAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH ISOLATED SOURCE/DRAINS AND METHOD
- Publication number 20250072065
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Jung-Hung CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH HYBRID SUBSTRATE AND MANUFACTURING METHOD...
- Publication number 20250072037
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Lun Min
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
- Publication number 20250072070
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- Chen An Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR CELL AND STRUCTURE THEREOF
- Publication number 20250072108
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Yao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESSED VIA WITH CONDUCTIVE LINK TO ADJACENT CONTACT
- Publication number 20250072069
- Publication date Feb 27, 2025
- Intel Corporation
- Leonard P. Guler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...
- Publication number 20250072078
- Publication date Feb 27, 2025
- Intel Corporation
- Andrew W. YEOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250072080
- Publication date Feb 27, 2025
- UNITED MICROELECTRONICS CORP.
- Chang-Yih Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING DISCHARGING PATH AND METHODS O...
- Publication number 20250063825
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- JAEHONG LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20250063781
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Shiang HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCAL TRAPPED METAL CONTACT FOR STACKED FET
- Publication number 20250063795
- Publication date Feb 20, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTORS HAVING VERTICALLY STACKED NANO-SHEET
- Publication number 20250063809
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wang-Chun Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES AND METHODS FOR FORMING DEVICES WITH INNER SPACERS
- Publication number 20250063779
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che-Lun Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURE FOR SEMICONDUCTOR DEVICE AND METHOD
- Publication number 20250063783
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yan-Ming Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME
- Publication number 20250063772
- Publication date Feb 20, 2025
- Industrial Technology Research Institute
- Po-Chun Yeh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICE INCLUDING WIMPY TRANSISTOR STACK WITH THI...
- Publication number 20250063782
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Panjae PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20250063788
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Sang Min CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPECIALIZED TRANSISTORS
- Publication number 20250063791
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tsung-Lin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT GATE ISOLATION
- Publication number 20250063792
- Publication date Feb 20, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jia-Chuan YOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE/DRAIN REGIONS IN COMPLEMENTARY FIELD EFFECT TRANSISTORS AND...
- Publication number 20250056852
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yu-Chang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250056861
- Publication date Feb 13, 2025
- Samsung Electronics Co., Ltd.
- SOOJIN JEONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Publication number 20250056840
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE/NANOSHEET DEVICE WITH CRYSTAL SPACER AND METHOD OF MANUFAC...
- Publication number 20250056850
- Publication date Feb 13, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH FLUSH SOURCE/DRAIN...
- Publication number 20250056824
- Publication date Feb 13, 2025
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH OFFSET SOURCE/DRAI...
- Publication number 20250056825
- Publication date Feb 13, 2025
- ATOMERA INCORPORATED
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE THAT INCLUDES A MULTI-BRIDGE CHANNEL FIELD EFF...
- Publication number 20250056843
- Publication date Feb 13, 2025
- Samsung Electronics Co., Ltd.
- Jong Min SHIN
- H01 - BASIC ELECTRIC ELEMENTS

of field-effect transistors with insulated gate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Source/drain epitaxial layers for transistors

Silicon phosphide semiconductor device

Contact-over-active-gate transistor structures with contacts landed...

Semiconductor device with fin end spacer dummy gate and method of m...

Semiconductor device and method for fabricating the same

Minimizing shorting between FinFET epitaxial regions

Methods for increasing germanium concentration of surfaces of a sil...

Methods of forming semiconductor devices

Device having increased forward biased safe operating area using so...

Semiconductor device structure and methods of forming the same

Word line structure of three-dimensional memory device

Integrated circuit with continuous active region and raised source/...

Semiconductor device and manufacturing method therefor

Method for making nanostructure transistors with source/drain trenc...

Semiconductor device and method of forming micro interconnect struc...

Body tie optimization for stacked transistor amplifier

Radiation hardened high voltage superjunction MOSFET

LDMOS with field plates

Stacked transistors with different channel widths

Semiconductor device including insulated gate bipolar transistor

Contact architecture for capacitance reduction and satisfactory con...

Self-aligned gate endcap (SAGE) architectures with gate-all-around...

Oxide thin film transistor, display panel and preparation method th...

Semiconductor device, and method for manufacturing semiconductor de...

Source/drain regions of FinFET devices and methods of forming same

Integrated chip with a gate structure disposed within a trench

Method of manufacturing semiconductor devices with multiple silicid...

Nanostructures formed over a substrate and a gate structure wrappin...

Semiconductor device and method of fabricating the same

Method of manufacturing a field effect transistor using carbon nano...

Patents Applicationslast 30 patents

DEVICE AND METHOD TO REDUCE MG TO SD CAPACITANCE BY AN AIR GAP BETW...

ENHANCED BODY TIED TO SOURCE LOW NOISE AMPLIFIER DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SOURCE/DRAIN ISOLATION OF TOP AND BOTTOM TIERS OF 3D FIELD-EFFECT T...

SEMICONDUCTOR DEVICE WITH DECREASED SOURCE AND DRAIN RESISTANCE AND...

FIELD EFFECT TRANSISTOR WITH ISOLATED SOURCE/DRAINS AND METHOD

SEMICONDUCTOR DEVICE WITH HYBRID SUBSTRATE AND MANUFACTURING METHOD...

SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

CAPACITOR CELL AND STRUCTURE THEREOF

RECESSED VIA WITH CONDUCTIVE LINK TO ADJACENT CONTACT

HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCU...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

INTEGRATED CIRCUIT DEVICES INCLUDING DISCHARGING PATH AND METHODS O...

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

LOCAL TRAPPED METAL CONTACT FOR STACKED FET

FIN FIELD EFFECT TRANSISTORS HAVING VERTICALLY STACKED NANO-SHEET

DEVICES AND METHODS FOR FORMING DEVICES WITH INNER SPACERS

CONTACT STRUCTURE FOR SEMICONDUCTOR DEVICE AND METHOD

SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME

INTEGRATED CIRCUIT DEVICE INCLUDING WIMPY TRANSISTOR STACK WITH THI...

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SPECIALIZED TRANSISTORS

CONTACT GATE ISOLATION

SOURCE/DRAIN REGIONS IN COMPLEMENTARY FIELD EFFECT TRANSISTORS AND...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

NANOWIRE/NANOSHEET DEVICE WITH CRYSTAL SPACER AND METHOD OF MANUFAC...

METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH FLUSH SOURCE/DRAIN...

METHOD FOR MAKING NANOSTRUCTURE TRANSISTORS WITH OFFSET SOURCE/DRAI...

SEMICONDUCTOR DEVICE THAT INCLUDES A MULTI-BRIDGE CHANNEL FIELD EFF...