of field-effect transistors with insulated gate

Industry

CPC
H01L29/0847

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/0847of field-effect transistors with insulated gate

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 12,176,290
- Issue date Dec 24, 2024
- Samsung Electronics Co., Ltd.
- Sungyu Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a transistor device with a gate structure having...
- Patent number 12,176,407
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Liang Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked nanosheet transistor with defect free channel
- Patent number 12,176,416
- Issue date Dec 24, 2024
- International Business Machines Corporation
- Lan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure having an isolation layer to isolate...
- Patent number 12,176,391
- Issue date Dec 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Lung-Kun Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with fin transistors and manufacturing method...
- Patent number 12,170,282
- Issue date Dec 17, 2024
- Sony Corporation
- Koichi Matsumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded metal lines
- Patent number 12,170,268
- Issue date Dec 17, 2024
- ADEIA SEMICONDUCTOR TECHNOLOGIES LLC
- Stephen Morein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor cell and structure thereof
- Patent number 12,170,283
- Issue date Dec 17, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chien-Yao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,165,929
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chun-Han Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor structure and manufacturing method
- Patent number 12,166,070
- Issue date Dec 10, 2024
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Jifeng Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet channel-to-source and drain isolation
- Patent number 12,166,110
- Issue date Dec 10, 2024
- Adeia Semiconductor Solutions LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structure for semiconductor device and method
- Patent number 12,166,078
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yan-Ming Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having source or drai...
- Patent number 12,159,901
- Issue date Dec 3, 2024
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and methods of forming the same
- Patent number 12,159,902
- Issue date Dec 3, 2024
- TAIWAN SEMICONDUCTOR MANUFACURING COMPANY, LTD.
- Lin-Yu Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cell placement optimization
- Patent number 12,159,904
- Issue date Dec 3, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chia-Chung Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with diffusion suppression and LDD implants an...
- Patent number 12,154,901
- Issue date Nov 26, 2024
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacturing via structures on source/drain contacts
- Patent number 12,154,856
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Kuo-Chiang Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor contacts and methods of forming the same
- Patent number 12,154,949
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei-Ting Chien
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-oxide-semiconductor field-effect transistor with stacked sour...
- Patent number 12,154,988
- Issue date Nov 26, 2024
- Samsung Electronics Co., Ltd.
- Sujin Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,154,902
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Yuan Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming epitaxial source/drain features in semiconductor...
- Patent number 12,154,947
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Tzu-Hsiang Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with reduced contact resistance
- Patent number 12,148,800
- Issue date Nov 19, 2024
- Samsung Electronics Co., Ltd.
- Sahwan Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tiered-profile contact for semiconductor
- Patent number 12,148,663
- Issue date Nov 19, 2024
- International Business Machines Corporation
- Kisik Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor device with gate spacer structure
- Patent number 12,148,813
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Che Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices having a semiconductor material that is semimetal in bulk a...
- Patent number 12,148,816
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jean-Pierre Colinge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and a method for fabricating the same
- Patent number 12,148,831
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Lien Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with treated interfacial layer on silicon germ...
- Patent number 12,148,843
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chih-Yu Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tuning threshold voltage through meta stable plasma treatment
- Patent number 12,148,620
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shao-Jyun Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET structure having a gate contact above a metal gate and strad...
- Patent number 12,148,834
- Issue date Nov 19, 2024
- Huawei Technologies Co., Ltd.
- Xinfang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with transistor local interconnects
- Patent number 12,148,702
- Issue date Nov 19, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Mahbub Rashed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double gate metal-ferroelectric-metal-insulator-semiconductor field...
- Patent number 12,150,309
- Issue date Nov 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yen-Chieh Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240421207
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Jiho YOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT DEVICES INCLUDING A BACKSIDE POWER DISTRIBUTION...
- Publication number 20240421154
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Jongjin Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240421186
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ta-Chun LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH CONNECTION OVER DISCONNECTED EPITAXIAL STRUCTURE USING DIREC...
- Publication number 20240421201
- Publication date Dec 19, 2024
- Intel Corporation
- Leonard P. GULER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE
- Publication number 20240421216
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Sunggyu Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR USE IN IMPROVING LINEARITY OF MOSFETS USIN...
- Publication number 20240421227
- Publication date Dec 19, 2024
- pSemi Corporation
- Christopher N. Brindle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240421190
- Publication date Dec 19, 2024
- Samsung Electronics Co., Ltd.
- Seong Heum Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FUNNELED SOURCE/DRAIN INTERFACIAL REGION
- Publication number 20240421191
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Shogo Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE CONTACTS FOR GATE, SOURCE, AND DRAIN
- Publication number 20240421003
- Publication date Dec 19, 2024
- International Business Machines Corporation
- Tsung-Sheng Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED MULTI-GATE DEVICE WITH AN INSULATING LAYER BETWEEN TOP AND...
- Publication number 20240413220
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wan Chen Hsieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240413158
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- SUNGMIN KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH REDUCED LEAKAGE CURRENT AND METHOD FOR...
- Publication number 20240413223
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-En TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING AIR GAP BETWEEN GATE DIELECTRIC LAYER AND SPACER
- Publication number 20240413199
- Publication date Dec 12, 2024
- UNITED MICROELECTRONICS CORP.
- Zhi-Cheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING METHOD FOR REDUCING RANDOM DOPAN...
- Publication number 20240413004
- Publication date Dec 12, 2024
- NANYA TECHNOLOGY CORPORATION
- Yu Jie JIANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEAT SINK FOR STACKED MULTI-GATE DEVICE
- Publication number 20240413039
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Che Chi Shih
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED MULTI-GATE DEVICE WITH DIFFUSION STOPPING LAYER AND MANUFAC...
- Publication number 20240413155
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Yu LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20240413200
- Publication date Dec 12, 2024
- UNITED MICROELECTRONICS CORP.
- Zhi-Cheng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
- Publication number 20240413202
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Heng TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH DOPED SOURCE/DRAIN REGION
- Publication number 20240413206
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- Yong Jun Nam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240413086
- Publication date Dec 12, 2024
- Samsung Electronics Co., Ltd.
- JINBUM KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT
- Publication number 20240413149
- Publication date Dec 12, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ching-Yu HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240405126
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Bo-Huan HSIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240405073
- Publication date Dec 5, 2024
- Samsung Electronics Co., Ltd.
- Hyumin Yoo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFINED EPITAXIAL REGIONS FOR SEMICONDUCTOR DEVICES AND METHODS OF...
- Publication number 20240405101
- Publication date Dec 5, 2024
- Intel Corporation
- Szuya S. LIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH LEAKAGE CURRENT GUIDE PATH AND METHOD FOR...
- Publication number 20240405064
- Publication date Dec 5, 2024
- NANYA TECHNOLOGY CORPORATION
- WEI-ZHONG LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240405113
- Publication date Dec 5, 2024
- Samsung Electronics Co., Ltd.
- Yang XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THEREOF
- Publication number 20240405114
- Publication date Dec 5, 2024
- Huawei Technologies Co., Ltd
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID ORIENTATION CHANNELS AND MIXED ORIENTATION BOTTOM EPITAXY
- Publication number 20240395816
- Publication date Nov 28, 2024
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20240395861
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Pei-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING EPITAXIAL SOURCE/DRAIN FEATURES IN SEMICONDUCTOR...
- Publication number 20240395866
- Publication date Nov 28, 2024
- Taiwan Semiconductor Manufacturing Co., LTD
- Tzu-Hsiang Hsu
- H01 - BASIC ELECTRIC ELEMENTS

of field-effect transistors with insulated gate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device

Method of forming a transistor device with a gate structure having...

Stacked nanosheet transistor with defect free channel

Semiconductor device structure having an isolation layer to isolate...

Semiconductor device with fin transistors and manufacturing method...

Embedded metal lines

Capacitor cell and structure thereof

Semiconductor device and method

Semiconductor transistor structure and manufacturing method

Nanosheet channel-to-source and drain isolation

Contact structure for semiconductor device and method

Gate-all-around integrated circuit structures having source or drai...

Semiconductor device structure and methods of forming the same

Cell placement optimization

Semiconductor device with diffusion suppression and LDD implants an...

Methods of manufacturing via structures on source/drain contacts

Transistor contacts and methods of forming the same

Multi-oxide-semiconductor field-effect transistor with stacked sour...

Semiconductor device and manufacturing method thereof

Methods of forming epitaxial source/drain features in semiconductor...

Semiconductor device with reduced contact resistance

Tiered-profile contact for semiconductor

Field-effect transistor device with gate spacer structure

Devices having a semiconductor material that is semimetal in bulk a...

Semiconductor device and a method for fabricating the same

Semiconductor device with treated interfacial layer on silicon germ...

Tuning threshold voltage through meta stable plasma treatment

FinFET structure having a gate contact above a metal gate and strad...

Semiconductor device with transistor local interconnects

Double gate metal-ferroelectric-metal-insulator-semiconductor field...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

INTEGRATED CIRCUIT DEVICES INCLUDING A BACKSIDE POWER DISTRIBUTION...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

TRENCH CONNECTION OVER DISCONNECTED EPITAXIAL STRUCTURE USING DIREC...

INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE

METHOD AND APPARATUS FOR USE IN IMPROVING LINEARITY OF MOSFETS USIN...

SEMICONDUCTOR DEVICES

FUNNELED SOURCE/DRAIN INTERFACIAL REGION

BACKSIDE CONTACTS FOR GATE, SOURCE, AND DRAIN

STACKED MULTI-GATE DEVICE WITH AN INSULATING LAYER BETWEEN TOP AND...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE WITH REDUCED LEAKAGE CURRENT AND METHOD FOR...

METHOD FOR FORMING AIR GAP BETWEEN GATE DIELECTRIC LAYER AND SPACER

SEMICONDUCTOR DEVICE MANUFACTURING METHOD FOR REDUCING RANDOM DOPAN...

HEAT SINK FOR STACKED MULTI-GATE DEVICE

STACKED MULTI-GATE DEVICE WITH DIFFUSION STOPPING LAYER AND MANUFAC...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

SEMICONDUCTOR DEVICE WITH DOPED SOURCE/DRAIN REGION

SEMICONDUCTOR DEVICE

INTEGRATED CIRCUIT

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE

CONFINED EPITAXIAL REGIONS FOR SEMICONDUCTOR DEVICES AND METHODS OF...

SEMICONDUCTOR DEVICE WITH LEAKAGE CURRENT GUIDE PATH AND METHOD FOR...

SEMICONDUCTOR DEVICE

FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THEREOF

HYBRID ORIENTATION CHANNELS AND MIXED ORIENTATION BOTTOM EPITAXY

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

METHODS OF FORMING EPITAXIAL SOURCE/DRAIN FEATURES IN SEMICONDUCTOR...