of field-effect transistors with insulated gate

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H01L29/0847

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/0847of field-effect transistors with insulated gate

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and a method for fabricating the same
- Patent number 12,211,845
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsiang-Ku Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid channel semiconductor device and method
- Patent number 12,211,900
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Pei-Yu Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around transistor with strained channels
- Patent number 12,211,897
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-En Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device and method of forming same
- Patent number 12,211,938
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shahaji B. More
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a doped fin well
- Patent number 12,211,901
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Bau-Ming Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC including standard cells and SRAM cells
- Patent number 12,213,296
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jhon-Jhy Liaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,213,309
- Issue date Jan 28, 2025
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Gongyi Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cut EPI process and structures
- Patent number 12,211,749
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Feng-Ching Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor biosensor
- Patent number 12,209,987
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yi-Hsing Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing FinFETs by fin-recessing processes to form...
- Patent number 12,211,842
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Che-Cheng Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device contact sizing in integrated circuit structures
- Patent number 12,211,898
- Issue date Jan 28, 2025
- Intel Corporation
- Guillaume Bouche
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of fin-type field effect transistor structure
- Patent number 12,211,843
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Hsiung Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and a semiconductor...
- Patent number 12,211,895
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yu-Lin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including gate oxide layer
- Patent number 12,211,915
- Issue date Jan 28, 2025
- United Microelectronics Corp.
- Ming-Hua Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate air spacer for fin-like field effect transistor
- Patent number 12,211,922
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chien-Ning Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around integrated circuit structures having nanowires with...
- Patent number 12,206,027
- Issue date Jan 21, 2025
- Intel Corporation
- Glenn Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar buried channel structure integrated with non-planar structures
- Patent number 12,205,947
- Issue date Jan 21, 2025
- Intel Corporation
- Guannan Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including multi-thickness nanowires
- Patent number 12,206,026
- Issue date Jan 21, 2025
- Samsung Electronics Co., Ltd.
- Seung Hun Lee
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor integrated circuit device
- Patent number 12,205,953
- Issue date Jan 21, 2025
- SOCIONEXT INC.
- Toshio Hino
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Butted body contact for SOI transistor and amplifier circuit
- Patent number 12,205,954
- Issue date Jan 21, 2025
- pSemi Corporation
- Simon Edward Willard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors including crystalline raised active regions and methods...
- Patent number 12,206,024
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company Limited
- Georgios Vellianitis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure with source/drain structure and meth...
- Patent number 12,205,849
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ta-Chun Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post-formation mends of dielectric features
- Patent number 12,206,013
- Issue date Jan 21, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wan-Yi Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FINFETS having step sided contact plugs and methods of manufacturin...
- Patent number 12,206,022
- Issue date Jan 21, 2025
- Samsung Electronics Co., Ltd.
- Sun Hom Paak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a multi-gate device having a semiconductor...
- Patent number 12,199,170
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Wei Ju Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate line plug structures for advanced integrated circuit structure...
- Patent number 12,199,167
- Issue date Jan 14, 2025
- Intel Corporation
- Byron Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Elevationally-extending transistors, devices comprising elevational...
- Patent number 12,199,182
- Issue date Jan 14, 2025
- Micron Technology, Inc.
- Scott E. Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer semiconductor structure, semiconductor device, and metho...
- Patent number 12,198,934
- Issue date Jan 14, 2025
- Sumitomo Electric Industries, Ltd.
- Takahide Hirasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,199,040
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Hyeongyu You
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and formation method of semiconductor device structure wi...
- Patent number 12,199,169
- Issue date Jan 14, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chao-Ching Cheng
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
Backside Contact and Metal over Diffusion
- Publication number 20250038070
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yi-Yi Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250040188
- Publication date Jan 30, 2025
- Samsung Electronics Co., Ltd.
- Yang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD-EFFECT TRANSISTOR DEVICE WITH HYBRID CONDUCTION MECHANISM
- Publication number 20250040196
- Publication date Jan 30, 2025
- Fudan University
- Chunlei WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250040206
- Publication date Jan 30, 2025
- Samsung Electronics Co., Ltd.
- Dahye Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250040216
- Publication date Jan 30, 2025
- Samsung Electronics Co., Ltd.
- Sungil PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-STACKED SEMICONDUCTOR DEVICE INCLUDING MIDDLE ISOLATION STRUCTUR...
- Publication number 20250040242
- Publication date Jan 30, 2025
- Samsung Electronics Co., Ltd.
- Keumseok Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH TRANSISTOR LOCAL INTERCONNECTS
- Publication number 20250038111
- Publication date Jan 30, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Mahbub Rashed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED METAL LINES
- Publication number 20250038152
- Publication date Jan 30, 2025
- ADEIA SEMICONDUCTOR TECHNOLOGIES LLC
- Stephen Morein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH MULTIPLE GATES AND RELATED METHOD
- Publication number 20250040243
- Publication date Jan 30, 2025
- Avago Technologies International Sales Pte. Limited
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate All-Around Laterally Diffused Metal-Oxide Semiconductor Field...
- Publication number 20250040169
- Publication date Jan 30, 2025
- Avago Technologies International Sales Pte. Limited
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Area Efficient Fin-Based Laterally-Diffused Metal-Oxide Semiconduct...
- Publication number 20250040177
- Publication date Jan 30, 2025
- Avago Technologies International Sales Pte. Limited
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20250040234
- Publication date Jan 30, 2025
- MEDIATEK INC.
- Je-Min WEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHARED SOURCE/DRAIN CONTACT FOR STACKED TRANSISTORS
- Publication number 20250040199
- Publication date Jan 30, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250040215
- Publication date Jan 30, 2025
- SAMSUNG ELECTRONICS CO,. LTD.
- Dong Hoon HWANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH DIFFERENT SIDEWALL SPACE...
- Publication number 20250040217
- Publication date Jan 30, 2025
- Western Digital Technologies, Inc.
- Masashi ISHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250029897
- Publication date Jan 23, 2025
- Samsung Electronics Co., Ltd.
- Jun Ki PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D-STACKED SEMICONDUCTOR DEVICE MANUFACTURED USING CHANNEL SPACER
- Publication number 20250031444
- Publication date Jan 23, 2025
- Samsung Electronics Co., Ltd.
- Seungchan Yun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250031405
- Publication date Jan 23, 2025
- Samsung Electronics Co., Ltd.
- Hojun CHOI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE HEIGHT OPTIMIZATION
- Publication number 20250031426
- Publication date Jan 23, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Heng Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING STACKED TRENCH CONTACTS AND STRUCTURES FORMED THE...
- Publication number 20250029926
- Publication date Jan 23, 2025
- Intel Corporation
- Bernhard SELL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250031406
- Publication date Jan 23, 2025
- SK keyfoundry Inc.
- Hanseob CHA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20250031417
- Publication date Jan 23, 2025
- Institute of Microelectronics, Chinese Academy of Sciences
- Huaxiang YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20250024679
- Publication date Jan 16, 2025
- Yangtze Memory Technologies Co., Ltd.
- Yali SONG
- G11 - INFORMATION STORAGE
Information Patent Application
GATE HARD MASK DESIGN FOR IMPROVED SOURCE/DRAIN FORMATION
- Publication number 20250022938
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yao-Hsuan Lai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH IMPROVED GATE CONTROL
- Publication number 20250022940
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Che-Chun LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING NANOSTRUCTURE TRANSISTOR AND METHODS OF...
- Publication number 20250022945
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chung-En TSAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...
- Publication number 20250022939
- Publication date Jan 16, 2025
- Intel Corporation
- Andrew W. Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH IMPROVED SOURCE/DRAIN PROFILE AND METHODS...
- Publication number 20250022914
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Kuei-Yu KAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES
- Publication number 20250022959
- Publication date Jan 16, 2025
- Samsung Electronics Co., Ltd.
- Sung Uk JANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME
- Publication number 20250015185
- Publication date Jan 9, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yu-Lien HUANG
- H01 - BASIC ELECTRIC ELEMENTS

of field-effect transistors with insulated gate

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device and a method for fabricating the same

Hybrid channel semiconductor device and method

Gate-all-around transistor with strained channels

FinFET device and method of forming same

Semiconductor device having a doped fin well

IC including standard cells and SRAM cells

Semiconductor device and manufacturing method thereof

Cut EPI process and structures

Semiconductor biosensor

Method for manufacturing FinFETs by fin-recessing processes to form...

Device contact sizing in integrated circuit structures

Manufacturing method of fin-type field effect transistor structure

Method of manufacturing a semiconductor device and a semiconductor...

Semiconductor device including gate oxide layer

Gate air spacer for fin-like field effect transistor

Gate-all-around integrated circuit structures having nanowires with...

Planar buried channel structure integrated with non-planar structures

Semiconductor device including multi-thickness nanowires

Semiconductor integrated circuit device

Butted body contact for SOI transistor and amplifier circuit

Transistors including crystalline raised active regions and methods...

Semiconductor device structure with source/drain structure and meth...

Post-formation mends of dielectric features

FINFETS having step sided contact plugs and methods of manufacturin...

Method of manufacturing a multi-gate device having a semiconductor...

Gate line plug structures for advanced integrated circuit structure...

Elevationally-extending transistors, devices comprising elevational...

Multilayer semiconductor structure, semiconductor device, and metho...

Semiconductor device

Structure and formation method of semiconductor device structure wi...

Patents Applicationslast 30 patents

Backside Contact and Metal over Diffusion

SEMICONDUCTOR DEVICE

FIN FIELD-EFFECT TRANSISTOR DEVICE WITH HYBRID CONDUCTION MECHANISM

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

3D-STACKED SEMICONDUCTOR DEVICE INCLUDING MIDDLE ISOLATION STRUCTUR...

SEMICONDUCTOR DEVICE WITH TRANSISTOR LOCAL INTERCONNECTS

EMBEDDED METAL LINES

SEMICONDUCTOR DEVICE WITH MULTIPLE GATES AND RELATED METHOD

Gate All-Around Laterally Diffused Metal-Oxide Semiconductor Field...

Area Efficient Fin-Based Laterally-Diffused Metal-Oxide Semiconduct...

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

SHARED SOURCE/DRAIN CONTACT FOR STACKED TRANSISTORS

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

HIGH VOLTAGE FIELD EFFECT TRANSISTORS WITH DIFFERENT SIDEWALL SPACE...

SEMICONDUCTOR DEVICE

3D-STACKED SEMICONDUCTOR DEVICE MANUFACTURED USING CHANNEL SPACER

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

GATE HEIGHT OPTIMIZATION

METHOD OF FORMING STACKED TRENCH CONTACTS AND STRUCTURES FORMED THE...

HIGH VOLTAGE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

GATE HARD MASK DESIGN FOR IMPROVED SOURCE/DRAIN FORMATION

SEMICONDUCTOR DEVICES WITH IMPROVED GATE CONTROL

SEMICONDUCTOR DEVICE HAVING NANOSTRUCTURE TRANSISTOR AND METHODS OF...

CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT...

SEMICONDUCTOR DEVICE WITH IMPROVED SOURCE/DRAIN PROFILE AND METHODS...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME