Claims
- 1. A channel structure for a plasma addressed liquid crystal panel, comprising
- a channel member defining at least one channel,
- at least one cathode having an upper surface exposed in said one channel, and
- at least one anode having an upper surface exposed in said one channel, said upper surface of said one anode being of substantially uniform composition and having a conductivity perpendicular to said upper surface of at least about 10.sup.-4 ohm.sup.-1 cm.sup.-1.
- 2. A channel structure according to claim 1, wherein the cathode has a metal-based core and a coating of refractory material.
- 3. A channel structure according to claim 1, wherein the anode has a metal-based core and a metal top layer.
- 4. A channel structure for a PALC panel, comprising
- a channel member defining at least one channel, and
- at least one cathode and at least one anode each having an upper surface exposed in said one channel for establishing an electric field in the channel between the anode and the cathode,
- and wherein said upper surface of the anode is of substantially uniform composition and has a conductivity of at least about 10.sup.-4 ohm.sup.-1 cm.sup.-1 parallel to the field established in the channel.
- 5. A channel structure according to claim 4, wherein the cathode has a metal-based core and a coating of refractory material.
- 6. A channel structure according to claim 4, wherein the anode has a metal-based core and a metal top layer.
- 7. A channel subassembly for a PALC panel comprising:
- a channel structure defining a plurality of channels,
- a cover sheet attached to the channel structure,
- a gas filling in the channels defined by the channel structure and the cover sheet, the gas filling containing helium doped with hydrogen at a concentration in the range from about 0.01% to about 10%,
- at least one cathode exposed in each channel, and
- at least one anode exposed in each channel, each anode having a surface layer of substantially uniform composition and having a conductivity of at least about 10.sup.-4 ohm.sup.-1 cm.sup.-1.
- 8. A channel subassembly according to claim 7, wherein the cathode has a metal-based core and a coating of refractory material.
- 9. A channel subassembly according to claim 7, wherein the anode has a metal-based core and a metal top layer.
- 10. A channel subassembly according to claim 7, wherein the gas filling contains hydrogen at a concentration in the range from about 0.5 percent to about 5 percent.
- 11. A channel subassembly according to claim 7, wherein the gas filling contains hydrogen at a concentration in the range from about 1 percent to about 3 percent.
CROSS REFERENCED TO RELATED APPLICATIONS
This application claims the benefit of U.S. Provisional Application No. 60/026,661, filed Sep. 30, 1996.
US Referenced Citations (13)
Foreign Referenced Citations (2)
Number |
Date |
Country |
31 06 368 |
Jan 1982 |
DEX |
30 40 761 |
May 1982 |
DEX |