Patent Application
20080135162
The present invention relates to a method of manufacturing a functional film including a dielectric material, piezoelectric material, pyroelectric material, magnetic material, semiconductor material or the like, and specifically to a method of manufacturing the functional film having a pattern. Further, the present invention relates to a structure for functional film pattern formation to be used in a manufacturing process of the functional film.
Recent years, in response to the needs for electronic devices such as miniaturization, speeding up, integration, and multifunctionality, the manufacture of devices containing functional materials such as electronic ceramics, which express predetermined functions by being applied with electric fields or magnetic fields and include a dielectric material, piezoelectric material, magnetic material, pyroelectric material and semiconductor material, by using various film formation technologies has been actively studied.
For example, in order to enable high-definition and high-quality printing in an inkjet printer, it is necessary to miniaturize and highly integrate ink nozzles of inkjet heads. Accordingly, it is also necessary to similarly miniaturize and highly integrate piezoelectric actuators for driving the respective ink nozzles. In such a case, a film formation technology, that enables formation of a thinner layer than a bulk material and formation of fine patterns, is desired, and film formation technologies such as a sputtering method, a sol-gel method, and an aerosol deposition method have been studied.
Conventionally, photolithography has been used for patterning a film of functional material (also simply referred to as “functional film”). That is, schematically, a functional film layer is formed on a substrate, a mask pattern is formed by applying a resist onto the film and performing exposure to light and development thereon, and further, the functional film layer is dry etched or wet etched, and thereby, a functional film pattern is obtained.
However, it is known that the functional film formed by film formation does not sufficiently exert its function in a condition after the film formation, and the film is inferior to a bulk material in performance. Accordingly, in order to sufficiently express the function of a functional film, heat treatment at relatively high temperature (e.g., about 500° C. to 1000° C.) is required after film formation. Further, since a film formation substrate is simultaneously heat-treated when the heat treatment is performed on the functional film, high heat tolerance is required for the material of film formation substrate. On the other hand, in the case where a fabricated function film is utilized, there is demand for using various kinds of substrates according to instruments such as a flexibly substrate made of resin, for example. Accordingly, a method has been studied by which a functional film formed on a film formation substrate can be peeled or transferred from the film formation substrate without hindering its function.
As a related technology, Japanese Patent Application Publication JP-P2005-64289A discloses a method for forming a high-density micropattern. The method includes the steps of forming an organic monomolecular film on a first substrate, microfabricating the organic monomolecular film by photolithography to form an organic monomolecular film pattern, selectively growing a thin film on the organic monomolecular film pattern, and transferring the thin film onto a second substrate to form a micropattern of the thin film on the second substrate (page 2).
According to the method disclosed in JP-P2005-64289A, the patterned functional film (the thin film 15 shown in FIG. 4 of JP-P2005-64289A) can be transferred relatively easily. However, the organic monomolecular film is used in this method, and therefore, it is impossible to form the functional film by a high-temperature process nor perform high-temperature heat treatment on the formed functional film.
Accordingly, in view of the above-mentioned problems, a first purpose of the present invention is to provide a method of manufacturing a functional film by which a fine pattern can be formed. Further, a second purpose of the present invention is to provide a method of manufacturing a functional film by which a functional film formed through a high temperature process can be provided on a desired substrate. Furthermore, a third purpose of the present invention is to provide a structure for functional film pattern formation to be used in a manufacturing process of such a functional film.
In order to accomplish the purposes, a structure for functional film pattern formation according to one aspect of the present invention includes: a substrate in which a predetermined pattern is formed; a separation layer directly or indirectly provided on the substrate; and a layer to be peeled provided on the separation layer and containing a functional film formed by using a functional material, wherein the layer to be peeled is peeled from the substrate or bonding strength between the layer to be peeled and the substrate becomes lower by heating the separation layer, applying an electromagnetic wave toward the separation layer, or applying an external force to the separation layer.
A method of manufacturing a function film according to one aspect of the present invention includes the steps of: (a) preparing a substrate in which a predetermined pattern is formed; (b) forming a separation layer directly or indirectly on the substrate; (c) forming a layer to be peeled containing a functional film, which is formed by using a functional material, on the separation layer; and (d) peeling the layer to be peeled from the substrate or reducing bonding strength between the layer to be peeled and the substrate by heating the separation layer, applying an electromagnetic wave toward the separation layer, or applying an external force to the separation layer.
Here, “reaction” refers to a process in which, from one material or material system, another material or material system different from the initial material or material system in composition or structure is produced. And “reaction” includes a process in which one kind of compound changes into two or more kinds of simpler materials, and a process in which, based on two kinds of materials including at least one kind of compound, two or more kinds of materials different from the initial materials are produced. Further, the former case is specifically referred to as “decomposition”, and the decomposition brought about by heating is referred to as “thermal decomposition”.
According to the present invention, the functional film is formed on the substrate in which the pattern has been formed in advance, and thereby, the process of performing dry etching or wet etching on the functional film can be omitted. Although sometimes damage is caused to the functional film in the etching step depending on the material, such damage is not caused according to the present invention. Further, the functional film is formed on the substrate via the separation layer, and therefore, by applying heat, an electromagnetic wave or an external force to the layer to be peeled, the substrate and the functional film can be easily peeled, or the bonding strength between them is reduced such that they can be dynamically and easily peeled at the subsequent step. Accordingly, the fine functional film pattern formed through the high temperature process can be easily transferred to a flexible substrate, for example, having relatively low heat tolerance and utilized. Therefore, elements having advantageous properties can be suitably mounted on instruments according to application and the performance of the entire instruments utilizing such elements can be improved.
Advantages and features of the present invention will be apparent by considering the following detailed description and the drawings in relation. In these drawings, the same reference numerals indicate the same component elements.
First, at step S1 in
As a material of the substrate 101, a single crystal material including a semiconductor single crystal material and an oxide single crystal material, a ceramics material, a glass material, or a metal material may be used. The substrate material is selected in consideration of heat tolerance or the like to a process temperature in the film formation process when the functional film is formed and the heat treatment process performed according to need.
As an oxide single crystal material, specifically, magnesium oxide (MgO), alumina (Al2O3), titanium oxide (TiO2), zinc oxide (ZnO), spinel (magnesium aluminate, MgAl2O4), strontium titanate (SrTiO3), lanthanum aluminate (LaAlO3), lithium niobate (LiNbO3), lithium tantalate (LiTaO3) and so on are cited. In the case where the oxide single crystal material is used, by selecting a material having a predetermined lattice constant according to a functional film as a target of manufacturing, the functional film can be formed by epitaxial growth. Further, since these materials are stable in an oxidizing atmosphere, they can be used for film formation or heat-treated at high temperature (e.g., about 1000° C. for magnesium oxide) in the air atmosphere.
As a semiconductor single crystal material, specifically, silicon (Si), germanium (Ge), gallium arsenide (GaAs), gallium phosphide (GaP), indium phosphide (InP) and so on are cited. In the case where the semiconductor single crystal material is used, by selecting a material having a predetermined lattice constant according to a functional film as a target of manufacturing, the functional film can be formed by epitaxial growth. Further, since these materials are stable in a reducing atmosphere, they can be used for film formation or heat-treated at high temperature (e.g., about 1000° C. for silicon) in the reducing atmosphere.
As a ceramics material, alumina (Al2O3), zirconia (ZrO2), aluminum nitride (AlN) and soon a recited. Since the ceramics material is more inexpensive than the single crystal material, the cost of manufacturing can be reduced. Further, since these materials are stable in the air atmosphere and have high heat tolerance, they can be used for film formation or heat-treated at high temperature (e.g., about 1100° C. for alumina) in the air atmosphere.
As a glass material, specifically, silicate glass, alkaline silicate glass, borosilicate glass, soda-lime glass, lead glass and so on are cited. Since the glass material is more inexpensive than the single crystal material, the cost of manufacturing can be reduced. Further, since these materials are stable in an oxidizing atmosphere, they can be used for film formation or heat-treated at high temperature (e.g., about 900° C. for silicate glass) in the air atmosphere.
As a metal material, specifically, metal such as platinum (Pt), copper (Cu), nickel (Ni), iron (Fe) and so on, and alloy such as stainless steel are cited. Since the metal material is more inexpensive than the single crystal material, the cost of manufacturing can be reduced. Further, since these materials are stable in a reducing atmosphere, they can be used for film formation or heat-treated at high temperature (e.g., about 1000° C. for platinum) in the reducing atmosphere.
The substrate 101 can be fabricated by forming a pattern in a substrate made of the above-mentioned material by using dry etching, electron beam lithography or the like. In this regard, for example, a mold fabrication technology used in nanoimprint technology may be applied. Alternatively, a commercially available nanoimprint mold may be used.
Next, at step S2, a separation layer 102 is formed on the substrate 101, as shown in
Alternatively, metal nitride containing at least one element of Ti, V, Cr, Mn, Fe, Co, Ni, Ga (gallium nitride is decomposed at about 900° C.), Zr, Mo (molybdenum nitride is decomposed at about 900° C.), Ta and W, metal sulfide containing at least one element of V, Cr, Mn, Fe, Co, Ni, Mo, Ta and W, and metal carbide such as TiC may be used. These compounds are applied with an electromagnetic wave having a predetermined wavelength to react with components in the atmosphere or an adjacent layer, i.e., components contained in the substrate 101 or a layer to be peeled 103, which will be described later, to generate a gas. For example, in the case where a substrate containing oxide and a separation layer containing metal nitride are used, the separation layer reacts with the oxide to generate nitrogen (N2).
As a method of forming the separation layer, a known method such as spin coating, sputtering and CVD (chemical vapor deposition) methods may be used.
Next, at step S3, a layer to be peeled 103 containing a material of a functional film as a target of manufacturing (functional material) is formed on the separation layer 102, as shown in
In the embodiment, specifically, the following materials are used as functional materials.
As a material of a functional film to be used for a memory element, Pb(Zr,Ti)O3, SrBi2 (Ta,Nb)2O9, Bi4Ti3O12 and so on are cited.
As a material of a functional film to be used for a piezoelectric element such as an actuator, Pb(Zr,Ti)O3, Pb (Mg1/3Nb2/3)O3, Pb (Zn1-3 Nb2/3)O3, Pb (Ni1/3 Nb2/3)O3 and so on, and solid solutions thereof are cited.
As a material of a functional film to be used for a pyroelectric element such as an infrared sensor, Pb (Zr,Ti)O3, (Pb,La)(Zr,Ti)O3 and so on are cited.
As a material of a functional film to be used for a passive component such as a capacitor, BaSrTiO3, (Pb,La)(Zr,Ti)O3 and so on are cited.
As a material of a functional film to be used for an optical element such as an optical switch, (Pb,La)(Zr,Ti)O3, LiNbO3 and so on are cited.
As a material of a functional film to be used for a superconducting element such as a superconducting quantum interference device (SQUID), YBa2Cu3O7, Bi2Sr2Ca2Cu3O10 and so on are cited. Here, SQUID refers to a highly sensitive magnetic sensor element utilizing superconductivity.
As a material of a functional film to be used for a photoelectric conversion element such as a solar cell, amorphous silicon and compound semiconductor are cited.
As a material of a functional film to be used for a micro magnetic element such as a magnetic head, PdPtMn, CoPtCr and so on are cited.
As a material of a functional film to be used for a semiconductor element such as a TFT, amorphous silicon and so on are cited.
The structure for functional film pattern formation according to the embodiment includes the substrate 101, the separation layer 102 and the layer to be peeled 103 formed at those steps S1 to S3.
Next, at step S4, a substrate for transfer 104 is prepared, and the structure for functional film pattern formation 101 to 103 is provided and fixed such that the layer to be peeled 103 faces the substrate for transfer 104, as shown in
Next, at step S5, heat treatment is performed on the structure for functional film pattern formation 101 to 103. The temperature of the heat treatment is set to the same level with the reaction temperature of the separation layer 102 or more in order to cause the reaction such as thermal composition or the like in the separation layer 102. Thereby, as shown in
Further, at step S5, heat treatment (post anneal) for promoting grain growth in the functional film or improving crystallinity to improve the function of the film may be performed. For example, in the case of manufacturing a functional film of Pb(Zr,Ti)O3, (Pb,La)(Zr,Ti)O3, BaSrTi3 or the like, heat treatment is performed at temperature of 500° C. or more. Further, in the case of manufacturing a functional film of SrBi2 (Ta,Nb)2O9, Bi4Ti3O12, YBa2Cu3O7, Bi2Sr2Ca2Cu3O10 or the like, heat treatment is performed at temperature of 700° C. or more. In this case, it is necessary to select the materials of the substrate for transfer 104 and adhesive agent in consideration of heat tolerance to the heat treatment temperature.
As described above, according to the first embodiment of the present invention, since the separation layer is provided between the substrate and the functional film, the functional film can be peeled from the substrate by heat treatment or they can be made easier to be peeled by reducing the bonding strength between them. Accordingly, a high-performance functional film fabricated by a film formation technology can be provided in a desired pattern on a desired substrate. Further, since the heat treatment process and the peeling (transfer) process can be performed at the same time by selecting the appropriate separation layer material according to the heat treatment temperature and heat treatment atmosphere for the functional film, the manufacturing process becomes simpler and the cost of manufacturing can be reduced.
Next, a method of manufacturing a functional film according to the second embodiment will be explained by referring to
First, at steps S1 to S3 of
As the material of the substrate 201, suitable one is selected from a single crystal material including a semiconductor single crystal material and an oxide single crystal material, a ceramics material and a glass material according to a wavelength of the electromagnetic wave to be used and so on. For example, in the case where light such as ultraviolet is used at step S5, it is desired to use a substrate through which a predetermined wavelength component is propagated or transmitted. Unlike the first embodiment, a metal material is not very preferable because it reflects almost all electromagnetic waves. Further, it is desirable that heat tolerance to process temperature in the film formation process and the heat treatment process performed according to need is also considered.
As a material of the separation layer 202, a material is used that causes, by being applied with an electromagnetic wave, reaction such as thermal decomposition or the like to generate a gas. Further, it desirably has heat tolerance to about 350° C. or more in consideration of process temperature in the film formation process or the like. Specifically, similarly to those as explained in the first embodiment, a compound containing carbonate, sulfate or nitrate, or a metal compound such as metal nitride, metal sulfide or metal carbide is used. The former decomposes to generate a gas by being applied with an electromagnetic wave having a predetermined wavelength. Further, the latter reacts with a component in an atmosphere or a material contained in an adjacent layer, i.e., the substrate 201 or the layer to be peeled 203, which will be describe later, to generate a gas by being applied with an electromagnetic wave having a predetermined wavelength.
The material of the layer to be peeled 203 is the same as that has explained in the first embodiment. Further, the method of fabricating the substrate 201 and the methods of forming the separation layer 202 and the layer to be peeled 203 are also the same as those have been explained in the first embodiment. Subsequently, heat treatment for improving the function of the function film may be performed on the structure for functional film pattern formation 201 to 203 according to need.
Next, at step S4 in
Next, at step S5, an electromagnetic wave is applied to the structure for functional film pattern formation 201 to 203. Thereby, as shown in
As the electromagnetic wave, an electromagnetic wave capable of causing the reaction such as deposition in the separation layer 202 is selected among microwave, an infrared ray, a visible ray, an ultraviolet ray and an X-ray. Here, the microwave is an electromagnetic wave having a wavelength of about 1 m to 1 mm, and includes UHF wave (decimeter wave), SHF wave (centimeter wave), EHF wave (millimeter wave) and submillimeter wave.
For example, in the case where an infrared ray containing an absorption wavelength of the separation layer material is applied to the separation layer 202, molecules contained in the separation layer material absorb infrared energy to greatly vibrate, and consequently, reaction such as decomposition occurs in the separation layer. Specifically, the case where an infrared ray having a wavelength of about 6.8 μm or 11.6 μm is applied to calcium carbonate is cited. Further, in the case where an ultraviolet ray containing a component having the absorption wavelength of the separation layer material is applied to the separation layer 202, atoms contained in the separation layer material absorb ultraviolet energy and outer electrons transition and become activated, and consequently, reaction such as decomposition occurs in the separation layer. Specifically, the case where an ultraviolet ray having a wavelength of about 248 nm is applied to calcium carbonate is cited. In this case, there is an advantage that the substrate 201 and the layer to be peeled 203 are not affected by heat. In the case where light such as an infrared or ultraviolet ray is used, it is desired that the electromagnetic wave is applied from the substrate 201 side toward the separation layer 202 as shown in
By the way, in the case where a microwave is applied to the separation layer 202, the separation layer 202 generates heat and reaction occurs according to the principle of microwave heating. Here, the absorption energy P of the microwave is expressed by the following equation (1).
P=(1/2)σ|E|2+πf∈0∈r″|E|2+πfμ0μr″|H|2 (1)
In equation (1), σ represents an electric conductivity, f (Hz) represents a frequency of the microwave, ∈0 represents a dielectric constant of vacuum, ∈r″ represents a relative dielectric constant (complex), μ0 represents a permeability of vacuum, μr″ represents a relative permeability (complex), E represents an electric field intensity, and H represents a magnetic field intensity. Further, the first term of the equation (1) represents joule loss (resistance loss), the second term represents dielectric loss, and the third item represents magnetic hysteresis loss.
When an electromagnetic field is applied by applying a microwave to the separation layer 102, heat corresponding to energy expressed by the equation (1) is generated. As a result, reaction such as decomposition occurs in the separation layer 102. Therefore, in the case of using a microwave, in order to efficiently generate heat, it is desired that a material having a large relative dielectric constant (complex) ∈r″, a material having a larger relative permeability (complex) ∈r″, or a material having a large electric conductivity σ is used as the separation layer 102.
According to the principle of microwave heating, the electromagnetic wave absorbing layer 202 is rapidly and uniformly heated to the interior thereof by being applied with microwave. Accordingly, reaction such as decomposition is quickly caused in the separation layer 202, and the layer to be peeled 203 can be peeled from the substrate 201 in a short period of time, or the bonding strength of them can be reduced. Further, while the microwave is applied, only the region applied with the microwave is locally heated, and when the application of microwave is stopped, the region is rapidly cooled, and therefore, the influence on other layers (e.g., the layer to be peeled 203 and the substrate for transfer 204) can be minimized. In the case of using a microwave, the microwave can reach the interior of the functional film containing structure without especially limiting an orientation of the microwave to be applied to the functional film containing structure.
First, a quartz mold is fabricated. For the purpose, a resist is applied to a quartz substrate, and exposure to light and development are performed, and thereby, a resist pattern is formed. Then, a pattern is formed on the quartz substrate by dry etching by using the resist pattern as a mask. Furthermore, ashing (resist peeling) is performed.
On the thus fabricated quartz mold, a tantalum nitride (TaN) film having a thickness of about 0.1 μm is formed as a separation layer by using a PLD (pulse laser deposition) method. A lower electrode of platinum (Pt) is formed on the tantalum nitride film by using the sputtering method, and a BST (barium strontium titanate) film having a thickness of about 200 nm is formed thereon by using the PLD method. At this time, the substrate temperature is heated to about 550° C. Furthermore, an upper electrode of platinum is formed on the BST film by using the sputtering method, and thereby, a Pt/BST/Pt thin film capacitor is fabricated.
Then, an adhesive agent is applied onto the upper electrode of the Pt/BST/Pt thin film capacitor formed on the projecting portions of the mold, and bonded to an epoxy substrate for transfer. Furthermore, when a KrF excimer laser beam (wavelength 248 nm) is applied from the rear side of the mold toward the tantalum nitride film, the tantalum nitride film reacts and generates a gas. Thereby, the Pt/BST/Pt thin film capacitor is peeled from the mold and transferred to the substrate for transfer.
As described above, according to the second embodiment of the present invention, the functional film can be easily peeled from the substrate or the bonding strength between them can be reduced for easy peeling at relatively low temperature (about 10° C. to about 100° C.) by applying an electromagnetic wave to the separation layer. Therefore, an element containing a functional film formed by using the film formation technology such as the evaporation method and the AD method through predetermined process temperature (e.g., about 350° C. or more) or a functional film provided with a high function by heat treatment at high temperature (e.g., about 800° C.) can be easily transferred to a desired substrate and utilized. That is, the transfer can be performed to a resin substrate having relatively low heat tolerance, and therefore, the range of choices of substrates can be expanded to a flexible substrate, for example, according to application.
In the embodiment, at the transfer step (step S5 in
Next, a modified example of the method of manufacturing a functional film according to the second embodiment of the present invention will be explained.
In the modified example, as shown in
Such a structure for functional film pattern formation is provided on the substrate for transfer 204, and the electromagnetic wave is applied toward the electromagnetic wave absorbing layer 210. Thereby, as shown in
According to the modified example, even in the case where the separation layer itself has little sensitivity to an electromagnetic wave, that is, its reactivity to an electromagnetic wave is not high, reaction because of heat can be produced in the separation layer. Therefore, the range of choices of kinds (wavelengths) of electromagnetic waves and separation layer materials can be expanded.
Next, a method of manufacturing a functional film according to the third embodiment of the present invention will be explained by referring to
First, as shown in
As the material of the substrate 301, a single crystal substrate including a semiconductor single crystal substrate and an oxide single crystal substrate, a ceramic substrate, a glass substrate or a metal substrate as those have been cited in the first embodiment may be used, and a material having heat tolerance to a process temperature in the film formation process when the functional film is formed and heat treatment process performed according to need is selected among them.
As the material of the separation layer 302, a material that easily fractures by being applied with an external force like a material having cleavage characteristics is used. Further, in consideration of process temperature at the subsequent process (e.g., about 350° C. or more), it is desired that a material having heat tolerance is used. As such a material, hexagonal boron nitride (h-BN), mica, graphite, transition metal chalcogenide including molybdenum disulfide (MoS2) and so on are cited. Further, as a method of forming the separation layer 302, a known method such as sputtering and CVD (chemical vapor deposition) methods may be used.
The material of the layer to be peeled 303 is the same as that has explained in the first embodiment. Further, the method of fabricating the substrate 301 and the method of forming the layer to be peeled 303 are also the same as those have been explained in the first embodiment.
As the substrate for transfer 304, a substrate having a certain degree of elasticity such as a synthesized resin substrate of epoxy or the like is desirably used. Further, electrodes and interconnections may be formed at the substrate for transfer 304 side in advance. Furthermore, the layer to be peeled 303 and the substrate for transfer 304 may be fixed using an adhesive agent or the like.
Next, at step S5, an external force is applied to the separation layer 302. As a method of applying an external force, the substrate for transfer 304 may be relatively displaced or deformed to the separation layer 302. Specifically, as shown in
First, a quartz mold is fabricated. For the purpose, a resist is applied to a quartz substrate, and a resist pattern is formed by performing exposure to light and development. Then, a pattern is formed on the quartz substrate by dry etching by using the resist pattern as a mask. Furthermore, ashing (resist peeling) is performed.
On the thus fabricated quartz mold, a hexagonal boron nitride (h-BN) film having a thickness of about 0.2 μm is formed as a separation layer by using a reactive sputtering method. A lower electrode of platinum (Pt) is formed on the hexagonal boron nitride film by using the sputtering method, and a BST (barium strontium titanate) film having a thickness of about 200 nm is formed thereon by using the PLD method. At this time, the substrate is heated to a temperature of about 550° C. Furthermore, an upper electrode of platinum is formed on the BST film by using the sputtering method, and thereby, a Pt/BST/Pt thin film capacitor is fabricated.
Then, an adhesive agent is applied onto the upper electrode of the Pt/BST/Pt thin film capacitor formed on the projecting portions of the mold, and bonded to an epoxy substrate for transfer. Furthermore, when the mold is fixed and an external force is applied to the hexagonal boron nitride film by pulling up the substrate for transfer, fracture is produced in the film. Thereby, the Pt/BST/Pt thin film capacitor is peeled from the mold and transferred to the substrate for transfer.
As described above, according to the third embodiment of the present invention, the functional film can be easily peeled from the film formation substrate or the bonding strength between them can be reduced for easy peeling by applying an external force to the separation layer. At that time, temperature never rises not only outside of the structure for functional film pattern formation but also inside thereof, and the functional film and the element containing the functional film can be transferred to a resin substrate having relatively low heat tolerance and utilized.
Further, since the material of the separation layer 302 to be used in the embodiment has relatively high heat tolerance, heat treatment can be performed on the functional film at a high temperature before the layer to be peeled 304 is provided. For example, h-BN is stable in an oxygen atmosphere and has heat tolerance to about 800° C. to 1000° C. Accordingly, in the case where a PZT film is fabricated by using h-BN as the separation layer, the piezoelectric property of the PZT film can be improved by performing heat treatment at about 800° C., for example.
As a modified example of the method of manufacturing a functional film according to the embodiment, an external force may be applied to the separation layer 302 while heating the structure for functional film pattern formation. Thereby, fracture is easily produced in the separation layer 302, and the layer to be peeled 303 can be peeled with weaker force. In this regard, improvement in the function of the functional film is expected by adjusting the heat treatment temperature according to the material of the functional film. In this case, the materials of the substrate for transfer 304 and adhesive agent are desirably selected according to the heat treatment temperature.
Alternatively, as another modified example of the method of manufacturing a functional film according to the embodiment, an external force may be applied to the separation layer 302 while applying an electromagnetic wave to the structure for functional film pattern formation. For example, since the material contained in the separation layer 302 is activated by being applied with an ultraviolet ray and the separation layer 302 is heated by being applied with an infrared ray or a microwave, fracture can be produced in the separation layer 302 with weaker force. In the case of applying light such as an ultraviolet ray and an infrared ray, it is desired to use a substrate material that is transparent to the electromagnetic wave to be used and the electromagnetic wave is applied from the rear side of the substrate 301 toward the separation layer 302.
As a modified example of the structure for functional film pattern formation to be used in the manufacturing process of the functional film according to the first to third embodiments of the present invention, at least one electrode may be formed on an upper surface or a lower surface of the functional film. For example, as shown in
Further, in the first to third embodiments, the layer to be peeled has been transferred to the substrate for transfer at the same time as being peeled from the substrate. However, only the peeling of the layer to be peeled may be performed without using the substrate for transfer. Thereby, a functional film molded in a desired shape in advance, or a functional element containing a functional film and an electrode can be obtained. In addition, in the case where a material having cleavage characteristics is used as the separation layer, an external force hay be applied to the separation layer by applying physical stimulation (e.g., impact) to the side surface of the separation layer or the like.
The substrate (101, 201, 301) to be used in the above-mentioned first to third embodiments can be reused by removing the residual separation layer by cleansing, etching or the like after peeling the layer to be peeled. Therefore, a number of the substrates can be suppressed and the cost of manufacture can be reduced.
The present invention can be applied to memory elements, piezoelectric elements, pyroelectric elements, passive elements such as capacitors, optical elements, superconducting elements, photoelectric conversion elements, micro magnetic elements and semiconductor elements containing functional materials such as dielectric materials, piezoelectric materials, pyroelectric materials, magnetic material and semiconductor materials, and instruments to which those elements are applied.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2005-166400 | Jun 2005 | JP | national |
| Filing Document | Filing Date | Country | Kind | 371c Date |
|---|---|---|---|---|
| PCT/JP2006/311666 | 6/5/2006 | WO | 00 | 8/29/2007 |
