The present disclosure relates to a magnetron sputtering deposition process, and more particularly, to a structure capable of adjusting its intensity distributions of magnetic field and the magnetic circuits that are caused at the motion limits of its movable base so as to reduce the bombardment happening at such motion limits and thus increasing the utilization rate of the target.
Sputtering is a process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic particles, such as ions excited in the plasma generated in the reaction chamber of sputtering device. It is commonly used for forming a thin film on a substrate surface by deposition.
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Since the magnetic base 83 is designed to move reciprocatively for scanning the back of the target 82, the intensity distribution of the magnetic field on the target that is caused by the magnetic base 83 will be varying with the scanning of the magnetic base 83, and thus the way relating to how the ions are going to bombard the target 82 will be changed accordingly which is going to affect the deposition rate of thin film on the substrate 85.
However, the aforesaid conventional magnetron sputtering device with movable base is advantageous in its low utilization rate of the target 82, that is, as the magnetic base 83 will be enabled to move in an opposite direction after it reaches it motion limit, the two portion of the target 82 relating to the motion limits of the magnetic base 83 will be bombarded more severely than the other portions, as shown in
It is noted that the improvement of conventional magnetron sputtering device is enforced only after the intensity distribution of magnetic field are detected and analyzed so as to be used as basis for determining how the magnets of different intensities are to be located or how a material of magnetic permeability are to be distributed. However, the locations of magnets or the distribution of magnetic-permeable material in a magnetron sputter has to be changed every time when the intensity of magnetic field has changed or when a different sputtering process with different sputtering conditions is required to be performed. Therefore, it is in need of an improvement that can overcome the aforesaid shortcomings
The present disclosure is to provide a target structure capable of overcoming the aforesaid shortcomings by the arrangement of magnetic conductors respectively at two motion limits with respect to the reciprocating range of a magnetic base so as to enable a surface magnetic field intensity to reduce and thus increase the utilization rate of the target.
The present disclosure provides a structure for increasing utilization rate of target, which comprises: a magnetic base, capable of moving relative to a target in a reciprocating manner; and two magnetic conductors, disposed respectively at two motion limits with respect to the reciprocating range of the magnetic base.
In an embodiment of the present disclosure, the magnetic base further comprises: a frame, which is configured with a support seat at a side thereof adjacent to the target whereas the support seat is configured with a first polarity magnetic element and a plurality of second polarity magnetic elements in a manner that the first polarity magnetic element is arranged at the center of the support seat while arranging the second polarity magnetic elements surrounding the first polarity magnetic element in a ring-like formation.
In another embodiment, the two magnetic conductors are arranged at locations respectively between the target and a position under the outer sides the adjacent second polarity magnetic elements at the time when the magnetic base reaches its two motion limits. Nevertheless, in further another embodiment, the magnetic conductors are arranged at positions respectively adjacent to the second polarity magnetic elements at the time when the magnetic base reaches its two motion limits.
Further scope of applicability of the present application will become more apparent from the detailed description given hereinafter. However, it should be understood that the detailed description and specific examples, while indicating exemplary embodiments of the disclosure, are given by way of illustration only, since various changes and modifications within the spirit and scope of the disclosure will become apparent to those skilled in the art from this detailed description.
The present disclosure will become more fully understood from the detailed description given herein below and the accompanying drawings which are given by way of illustration only, and thus are not limitative of the present disclosure and wherein:
For your esteemed members of reviewing committee to further understand and recognize the fulfilled functions and structural characteristics of the disclosure, several exemplary embodiments cooperating with detailed description are presented as the follows.
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It is noted that the structure for increasing utilization rate of target disclosed in the present disclosure can be adapted for single-target magnetron sputtering devices and multiple-target magnetron sputtering device. In those embodiment, a structure, being adapted for a single-target magnetron sputtering device, is used for illustration which comprises: a magnetic base 2, positioned over a target 1 while enabling the same to move relative to a target in a reciprocating manner; and two magnetic conductors 3, disposed respectively at two motion limits with respect to the reciprocating range of the magnetic base 2.
Moreover, the magnetic base 2 has a frame 20, which is configured with a first polarity magnetic element 21 and a plurality of second polarity magnetic elements 22 in a manner that the first polarity magnetic element 21 is arranged at the center of the frame 20 on the side thereof facing toward the target 1 while arranging the second polarity magnetic elements 22 surrounding the first polarity magnetic element in a ring-like formation. For fixing the first polarity magnetic element 21 and the plural second polarity magnetic elements 22, the frame 20 further has a support seat 23 mounted on the frame 20, that is provided for the first polarity magnetic element 21 and the second polarity magnetic elements to fixed thereat.
In this embodiment, the frame 20 is a rectangle-shaped object made of a magnetic conductive material; the first polarity magnetic element as well as each polarity magnetic element is made up of permanent magnets; the support seat is made of a non-magnetic conductive material; and each magnetic conductor is made of a material selected from the group consisting of: iron, cobalt, nickel and the alloys thereof. In addition, the two magnetic conductors 3 are arranged at locations respectively under the outer sides the adjacent second polarity magnetic elements 22 at the time when the magnetic base reaches its two motion limits for enabling the same to be sandwiched between the adjacent second polarity magnetic elements 22 and the target 1.
As shown in
By the compressing of magnetic lines and the changing of the corresponding magnetic circuit as the magnetic based 2 is moving approaching the motion limits and closing to the magnetic conductors 3, the surface magnetic field intensity of the target that is caused by the magnetic base 2 is weakened. As shown in
As the magnetic field intensity on the target that is caused by the magnetic base 3 is reduced significantly at the time when the magnetic base 2 reaches its motion limits, the phenomenon, that the two portion of the target 1 relating to the motion limits of the magnetic base 2 will be bombarded more severely than the other portions as the magnetic base 2 is enabled to move back in an opposite direction after it reaches it motion limit, can be eased off significantly. As shown in
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The disclosure being thus described, it will be obvious that the same may be varied in many ways. Such variations are not to be regarded as a departure from the spirit and scope of the disclosure, and all such modifications as would be obvious to one skilled in the art are intended to be included within the scope of the following claims.
Number | Date | Country | Kind |
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098141490 | Dec 2009 | TW | national |