Claims
- 1. A continuous free-standing substantially transparent polycrystalline diamond film having a thickness of at least 50 microns.
- 2. A continuous free-standing substantially transparent polycrystalline diamond film having a thickness of at least 50 microns and a thermal conductivity of at least about 4 W/cm-K.
- 3. A continuous free-standing substantially transparent polycrystalline diamond film in accordance with claim 1, having a thermal conductivity in the range of about 4 W/cm-K to about 21 W/cm-K.
- 4. A continuous free-standing, substantially transparent, polycrystalline diamond film having a thickness of at least 50 microns, and when examined for transparency at a thickness of about 300 microns, it has an absorbance of less than about 1.6 when using light having a wavelength in the range of between about 300 to 1400 nanometers, and it has an absorbance of less than about 0.2 when using light having a wavelength in the range of between about 1400 to about 2400 nanometers.
- 5. A substantially transparent diamond film in accordance with claim 1, wherein the diamond film has a thickness between about 100 microns and about 1000 microns.
- 6. A substantially transparent diamond film in accordance with claim 1, wherein the diamond film has a thickness between about 200 microns and about 500 microns.
- 7. A substantially transparent diamond film in accordance with claim 1, wherein the diamond film comprises substantially vertical columnar diamond crystals having a preferred <110> orientation perpendicular to the base of the film.
- 8. A substantially transparent diamond film in accordance with claim 7, having diamond grain boundaries separating the columnar diamond crystals wherein said boundaries have a 70.degree. to 90.degree. orientation to the base of the film.
- 9. A method of growing a continuous free standing, non-adherent substantially transparent polycrystalline film on the surface of a substrate, which diamond film has a thickness of at least 50 microns, comprising, passing a hydrogen-methane mixture at a pressure of about 1 to about 50 torr through a heated filament reaction zone which is sufficient to generate active carbon-hydrogen species and provide a temperature of about 600.degree. C. to 1000.degree. C. on the surface of the substrate where the hydrogen-methane mixture introduced into the heated filament reaction zone has from about 0.1 to about 2 volume % of methane based on the total volume of hydrogen and methane.
- 10. A continuous free-standing translucent polycrystalline diamond film having a thickness of at least 50 microns.
- 11. A continuous free-standing translucent polycrystalline diamond film having a thickness of at least 50 microns and a thermal conductivity of at least about 4 W/cm-K.
- 12. A continuous free-standing translucent polycrystalline diamond film in accordance with claim 11, having a thermal conductivity in the range of about 4 W/cm-K to about 21 W/cm-K.
- 13. A continuous free-standing, translucent, polycrystalline diamond film having a thickness of at least 50 microns, and when examined for transparency at a thickness of about 300 microns, it has an absorbance of less than about 1.6 when using light having a wavelength in the range of between about 300 to 1400 nanometers, and it has an absorbance of less than about 0.2 when using light having a wavelength in the range of between about 1400 to about 2400 nanometers.
- 14. A translucent diamond film in accordance with claim 11, wherein the diamond film has a thickness between about 100 microns and about 1000 microns.
- 15. A translucent diamond film in accordance with claim 11, wherein the diamond film has a thickness between about 200 microns and about 500 microns.
- 16. A translucent diamond film in accordance with claim 11, wherein the diamond film comprises substantially vertical columnar diamond crystals having a preferred <110> orientation perpendicular to the base of the film.
- 17. A translucent diamond film in accordance with claim 16, having diamond grain boundaries separating the columnar diamond crystals wherein said boundaries have a 70.degree. to 90.degree. orientation to the base of the film.
- 18. A method of growing a continuous free standing, non-adherent translucent polycrystalline film on the surface of a substrate, which diamond film has a thickness of at least 50 microns, comprising, passing a hydrogen-methane mixture at a pressure of about 1 to about 50 torr through a heated filament reaction zone which is sufficient to generate active carbon-hydrogen species and provide a temperature of about 600.degree. C. to 1000.degree. C. on the surface of the substrate where the hydrogen-methane mixture introduced into the heated filament reaction zone has from about 0.1 to about 2 volume % of methane based on the total volume of hydrogen and methane.
CROSS REFERENCE TO RELATED APPLICATION
This application is a continuation in part of copending application Ser. No. 07/407,179, filed Sep. 14, 1989 now U.S. Pat. No. 5,110,579 and incorporated herein by reference. Reference also is made to copending application Ser. No. 07/661,965, filed Feb. 28, 1991.
US Referenced Citations (8)
Non-Patent Literature Citations (2)
Entry |
Unusually High Thermal Conductivity in Diamond Films, J. E. Graebner et al., Submitted to Applied Physics Letters (1991) pp. 1-10, plus Figures and Abstract. |
Diamond-Ceramic Coating of the Future, Karl E. Spear-J. Am. Ceram. 1 Soc., 72 (2) 171-91 (1989) 4 random pages-171, 173, 186 and 187. |
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
407179 |
Sep 1989 |
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