Substrate for an organic field effect transistor, use of said substrate, method of increasing the charge carrier mobility, and organic field effect transistor (OFET)

Information

  • Patent Grant
  • 7709865
  • Patent Number
    7,709,865
  • Date Filed
    Friday, June 6, 2003
    21 years ago
  • Date Issued
    Tuesday, May 4, 2010
    14 years ago
Abstract
An organic field effect transistor includes a well-ordered substrate layer on which organic functional material is deposited. A method of increasing the charge carrier mobility of the organic field effect transistor substrate layer is achieved by depositing onto the substrate an organic functional material, the substrate being in the form of a well-ordered layer. The method and transistor include using a well-ordered plastics film as the substrate layer.
Description

The invention relates to a substrate for an organic field effect transistor, to the use of said substrate, to a method of increasing the charge carrier mobility and to an organic field effect transistor onto which an organic functional material can be deposited in the form of a well-ordered layer.


When fabricating electric circuits based on organic materials, as in the case of organic diodes, condensers and, in particular, organic field effect transistors (OFETs) for example, thin layers of an organic functional material are applied to suitable substrates of silicon, glass or plastics material by various methods, such as spin-coating, knife coating, spraying, plotting, printing, vapor deposition, sputtering, etc. In order to obtain favorable material characteristics conducive to good electrical performance, i.e., characteristics such as high electrical conductivity or a high charge carrier mobility, it is advantageous to produce a certain degree of molecular orderliness in the organic functional material.


In the literature there are described simple substrates of silicon [Z. Bao et at, Appl. Phys. Lett. 69 (26) (1996) 4108]; polycarbonate [O. H. Gelinck et at, Appl. Phys. Lett. 77 (10) (2000) 1487] or polyimide [C. J. Drury et at, Appl. Phys. Lett. 73 (1) (1998) 108], and, in addition, mechanically pretreated, ie brushed polyimide substrates, which facilitate a well-25 ordered deposition of conjugated polymers as semiconductors and thus lead to higher field effects in OFETs compared with unprocessed polyimide [H. Sirringhaus et at, Science 290 (2000) 2123]. Mechanical pretreatment is cost-intensive, ie it involves an additional processing step and can cause damage to the surface of the substrate.


U.S. 2002041427 discloses a process for the production of a crystalline, nonlinear optical (NLO) film, in which the well-ordered application of the NLO film is facilitated by means of an intermediate layer (alignment layer) applied just for this purpose.


Except for these attempts to facilitate a well-ordered application of a functional material and/or to guarantee the same to a certain degree, there is as yet no method of applying a functional material to a substrate in an orderly fashion. However, the well-ordered application of an organic functional material is a decisive factor influencing the charge carrier mobility thereof. Thus there is a constant need to provide methods by means of which layers of functional material can be produced that are better ordered.


It is thus an object of the present invention to provide a substrate or an undersurface, which has a well-ordered surface allowing the application/deposition of an oriented and well-ordered organic functional material.


The present invention relates to a substrate and/or underlayer of an electronic component, which substrate or underlayer is to be coated with an organic functional layer, wherein said substrate or underlayer comprises an oriented, stretched (well-ordered) plastics film such that the orderliness of the plastics film enables the application of the functional material in the form of a well-ordered layer.


By substrate, undersurface or underlayer is meant in this case any layer that can serve as a carrier for a layer containing organic functional material. It can, of course, be a film used for encapsulation, such as when an OFET is fabricated in bottom-up layout.


The term “organic material” or “functional material” or “(functional) polymer” includes in this case all types of organic, organometallic, and/or organic-inorganic man-made materials (hybrids), particularly those referred to in the English language as, e.g., “plastics”. All types of materials are suitable with the exception of the semiconductors forming classical diodes (germanium, silicon) and the typical metallic conductors. It is thus not intended to dogmatically confine organic material to that consisting of purely carbonaceous material, but rather the term also covers the wide use of, say, silicones. Furthermore, the term should not, with respect to molecular size, be particularly confined to polymeric and/or oligomeric materials but can also refer to the use of “small molecules”. The word component “polymer” in the term “functional polymer” is of historical origin and contains no inference to the presence of an actual polymeric compound.


Preference is given to the use of an axially stretched oriented and/or at least partially crystalline plastics film, particularly a monoaxially and preferably a biaxially stretched plastics film. For example, a suitable film is one of isotactic polypropylene, polyamide, polyethylene, polyethylene terephthalate, polyphthalamide, polyether ketone ketone (PEKK), polyether ether ketone (PEEK), syndiotactic polystyrene, polyvinylidene difluoride, polytetrafluoroethylene.


Due to the fact that the polymer films are stretched during manufacture and subsequent processing thereof, some of the crystallites formed in the substrate and thus also on its surface are highly ordered and assume the form of parallel molecular chains or chain portions which make it possible to deposit, as well-ordered layers, conjugated polymers and also organic materials of lower molecular weight (monomers, oligomers and/or “small molecules”) in conducting and non-conducting forms as well as in semiconducting and nonsemiconducting forms. Application of the said organic functional layer can be carried out from solution (spin-coating, printing, immersion, knife coating etc.) or alternatively from the vapor phase (vapor deposition, sputtering etc.). The orientation of the substrate allows it to serve as a so-called “alignment template” and leads to the formation of highly ordered areas in the precipitated functional material, which leads to higher conductivity and/or higher charge carrier mobility.





The invention is explained below with reference to a FIGURE.





This shows a substrate 1, preferably a biaxially stretched plastics film, for example a film of polyethylene terephthalate (PET), which supports the source and drain electrodes 2 (of, for example, conductive polyaniline (PANI)). The semiconducting layer 3 is applied to the substrate such that it is deposited in direct contact with the biaxially stretched plastics film 1. Thus a well-ordered state is produced within the semiconducting layer, by means of which better mobility of the charge carrier is attained. For this purpose a solution of poly(3-hexylthiophene) in chloroform, for example, is applied by spin-coating to substrate 1 so as to form a homogeneous polymeric layer having a thickness of 100 nm. Following a drying step, an electrically insulating polystyrene layer 4 is applied by spin-coating to form the gate dielectric.


Production of the gate electrode 5 is effected in a manner well known to the person skilled in the art (sputtering etc.).


An organic field effect transistor (OFET) applied in this manner to a substrate which has 5 been pre-oriented by stretching shows a charge carrier mobility of μ>10−3 cm2/Vs. This value is several orders of magnitude higher than the mobility possible in OFETs of identical structure but having a non-oriented substrate, e.g., one of silicon or silicon dioxide. In addition, the biaxially stretching can be shown to improve the ON/OFF ratio of the transistor.


The invention makes it possible, for the first time, to increase the charge carrier mobility in organic semi-conductors by several orders of magnitude due to the selection of a suitable substrate.

Claims
  • 1. In an electronic organic component, the combination comprising: a substrate of the electronic organic component; andan organic functional layer coated on the substrate;wherein said substrate comprises a biaxially stretched (well-ordered) plastic film such that the orderliness of the plastic film forms the applied functional layer into a well-ordered layer to thereby improve electrical properties of the component.
  • 2. In the electronic organic component as defined in claim 1, wherein the plastic film is at least partially crystalline.
  • 3. In the electronic organic component as defined in any one of claims 1 or 2, wherein the plastic film is selected from any one of the group consisting of isotactic polypropylene, polyamide, polyethylene, or polyethylene terephthalate.
  • 4. In the electronic organic component of any one of claims 1 or 2 wherein the component further comprises an organic field effect transistor (OFET) comprising the substrate and the functional layer forming a semiconductor layer coated on the substrate.
  • 5. In an organic field effect transistor (OFET) the combination comprising the substrate and a semiconducting layer formed from the functional layer on and contiguous with the substrate according to claim 3.
  • 6. The transistor of claim 4 wherein the electrical properties comprises an improved ON/OFF ratio of the transistor.
  • 7. A method of improving electrical properties of a functional layer of organic material, wherein the functional layer is formed on and contiguous with an underlayer comprising an oriented, biaxially stretched (well-ordered) plastic film, the electrical properties of the functional layer being improved by the contiguous well ordered biaxially stretched underlayer.
  • 8. The structure of one of claims 1 or 7 wherein the structures form a transistor whose electrical properties comprises an improved transistor ON/OFF ratio.
  • 9. In an organic field effect transistor (OFET) the combination comprising: a substrate which comprises a biaxially stretched (well-ordered) plastic film; anda semiconducting layer above and on that substrate contiguous therewith, the semiconductor layer exhibiting improved electrical properties.
  • 10. An organic transistor comprising: a substrate which comprises a biaxially stretched (well-ordered plastic film);a semiconducting layer above and on that substrate contiguous therewith, the semiconductor layer exhibiting improved electrical properties;source and drain electrodes on the substrate contiguous with the semiconductor layer;an insulating layer on the semiconductor layer; anda gate electrode on the insulating layer.
  • 11. The transistor of claim 10 wherein the electrical properties comprise an improved ON/OFF ratio of the transistor.
Priority Claims (1)
Number Date Country Kind
102 26 370 Jun 2002 DE national
PCT Information
Filing Document Filing Date Country Kind 371c Date
PCT/DE03/01899 6/6/2003 WO 00 6/10/2005
Publishing Document Publishing Date Country Kind
WO03/107450 12/24/2003 WO A
US Referenced Citations (100)
Number Name Date Kind
3512052 Maclver et al. Dec 1970 A
3769096 Ashkin Oct 1973 A
3955098 Kawamoto May 1976 A
4059667 Pangonis Nov 1977 A
4302648 Sado et al. Nov 1981 A
4340657 Rowe Jul 1982 A
4442019 Marks Apr 1984 A
4865197 Craig Sep 1989 A
4926052 Hatayama May 1990 A
4937119 Nickles et al. Jun 1990 A
5173835 Cornett et al. Dec 1992 A
5206525 Yamamoto et al. Apr 1993 A
5259926 Kuwabara et al. Nov 1993 A
5321240 Takahira Jun 1994 A
5347144 Garnier et al. Sep 1994 A
5364735 Akamatsu et al. Nov 1994 A
5395504 Saurer et al. Mar 1995 A
5480839 Ezawa et al. Jan 1996 A
5486851 Gehner et al. Jan 1996 A
5502396 Desarzens Mar 1996 A
5546889 Wakita et al. Aug 1996 A
5569879 Gloton et al. Oct 1996 A
5574291 Dodabalapur et al. Nov 1996 A
5578513 Maegawa Nov 1996 A
5580794 Allen Dec 1996 A
5625199 Baumbach et al. Apr 1997 A
5629530 Brown et al. May 1997 A
5630986 Miller et al. May 1997 A
5652645 Jain Jul 1997 A
5691089 Smayling Nov 1997 A
5705826 Aratani et al. Jan 1998 A
5729428 Sakata et al. Mar 1998 A
5817550 Carey et al. Oct 1998 A
5854139 Kondo et al. Dec 1998 A
5856013 Abkowitz et al. Jan 1999 A
5869972 Birch et al. Feb 1999 A
5883397 Isoda et al. Mar 1999 A
5892244 Tanaka et al. Apr 1999 A
5946551 Dimitrakopoulos Aug 1999 A
5967048 Fromson et al. Oct 1999 A
5970318 Choi et al. Oct 1999 A
5973598 Beigel Oct 1999 A
5994174 Carey et al. Nov 1999 A
5994773 Hirakawa Nov 1999 A
5997817 Crismore et al. Dec 1999 A
5998805 Shi et al. Dec 1999 A
6036919 Thym et al. Mar 2000 A
6045977 Chandross et al. Apr 2000 A
6060338 Tanaka et al. May 2000 A
6072716 Jacobsen et al. Jun 2000 A
6083104 Choi Jul 2000 A
6087196 Sturm et al. Jul 2000 A
6133835 De Leeuw et al. Oct 2000 A
6150668 Bao et al. Nov 2000 A
6197663 Chandross et al. Mar 2001 B1
6207472 Calligari et al. Mar 2001 B1
6215130 Dodabalapur Apr 2001 B1
6221553 Wolk et al. Apr 2001 B1
6251513 Hyatt et al. Jun 2001 B1
6284562 Batlogg et al. Sep 2001 B1
6300141 Segal et al. Oct 2001 B1
6321571 Themont et al. Nov 2001 B1
6322736 Bao et al. Nov 2001 B1
6326640 Shi et al. Dec 2001 B1
6329226 Jones et al. Dec 2001 B1
6330464 Colvin et al. Dec 2001 B1
6335539 Dimitrakopoulos et al. Jan 2002 B1
6340822 Brown et al. Jan 2002 B1
6344662 Dimitrakopoulos et al. Feb 2002 B1
6362509 Hart Mar 2002 B1
6384804 Dodabalapur et al. May 2002 B1
6403396 Gudesen et al. Jun 2002 B1
6429450 Mutsaers et al. Aug 2002 B1
6433359 Kelley et al. Aug 2002 B1
6498114 Amundson et al. Dec 2002 B1
6517955 Takada et al. Feb 2003 B1
6555840 Hudson et al. Apr 2003 B1
6593690 McCormick et al. Jul 2003 B1
6603139 Tessler et al. Aug 2003 B1
6621098 Jackson et al. Sep 2003 B1
6852583 Bernds et al. Feb 2005 B2
6903958 Bernds et al. Jun 2005 B2
20010046081 Hayashi et al. Nov 2001 A1
20020018911 Bernius et al. Feb 2002 A1
20020022284 Heeger et al. Feb 2002 A1
20020025391 Angelopoulos Feb 2002 A1
20020053320 Duthaler May 2002 A1
20020056839 Joo et al. May 2002 A1
20020068392 Lee et al. Jun 2002 A1
20020130042 Stiene et al. Sep 2002 A1
20020170897 Hall Nov 2002 A1
20020195644 Dodabalapur et al. Dec 2002 A1
20030059987 Sirringhaus et al. Mar 2003 A1
20030112576 Brewer et al. Jun 2003 A1
20030175427 Loo et al. Sep 2003 A1
20040002176 Xu Jan 2004 A1
20040013982 Jacobson et al. Jan 2004 A1
20040026689 Bernds et al. Feb 2004 A1
20040084670 Tripsas et al. May 2004 A1
20040211329 Funahata et al. Oct 2004 A1
Foreign Referenced Citations (155)
Number Date Country
33 38 597 May 1985 DE
4243832 Jun 1994 DE
198 52 312 May 1999 DE
198 16 860 Nov 1999 DE
199 18 193 Nov 1999 DE
198 51703 May 2000 DE
199 21 024 Nov 2000 DE
19933757 Jan 2001 DE
69519872 Jan 2001 DE
199 35 527 Feb 2001 DE
199 37 262 Mar 2001 DE
100 12204 Sep 2001 DE
100 33112 Jan 2002 DE
100 45 192 Apr 2002 DE
100 47 171 Apr 2002 DE
100 43204 Apr 2002 DE
100 58 559 May 2002 DE
100 61297 Jun 2002 DE
10006257 Jun 2002 DE
101 17 663 Oct 2002 DE
101 20 687 Oct 2002 DE
102 19 905 Dec 2003 DE
0 108650 May 1984 EP
0 128 529 Dec 1984 EP
0 268 370 May 1988 EP
0 268 370 May 1988 EP
0 350 179 Jan 1990 EP
0 418504 Mar 1991 EP
0 442123 Aug 1991 EP
0 460 242 Dec 1991 EP
0460242 Dec 1991 EP
0501456 Sep 1992 EP
0501456 Sep 1992 EP
0 511807 Nov 1992 EP
0 528662 Feb 1993 EP
0685985 Dec 1995 EP
0716458 Jun 1996 EP
0 785 578 Jul 1997 EP
0 785 578 Jul 1997 EP
0 786820 Jul 1997 EP
0 615 258 Sep 1998 EP
0962984 Dec 1999 EP
0968182 Dec 1999 EP
0 981 165 Feb 2000 EP
0 979715 Feb 2000 EP
0981165 Feb 2000 EP
0989614 Mar 2000 EP
1 048 912 Nov 2000 EP
1 052 594 Nov 2000 EP
1065725 Jan 2001 EP
1065725 Jan 2001 EP
1 083 775 Mar 2001 EP
1 102 335 May 2001 EP
1 104 035 May 2001 EP
1 103916 May 2001 EP
1 134 694 Sep 2001 EP
1224999 Jul 2002 EP
1237207 Sep 2002 EP
1 318 084 Jun 2003 EP
2793089 Nov 2000 FR
723598 Feb 1955 GB
2 058 462 Apr 1981 GB
2001P20024 Aug 2000 GR
2001P03239 Jan 2001 GR
54069392 Jun 1979 JP
60117769 Jun 1985 JP
61001060 Jan 1986 JP
61167854 Jul 1986 JP
362065477 Mar 1987 JP
01169942 Jul 1989 JP
04-199638 Jun 1992 JP
05152560 Jun 1993 JP
05259434 Oct 1993 JP
05347422 Dec 1993 JP
08197788 Aug 1995 JP
09083040 Mar 1997 JP
09320760 Dec 1997 JP
10026934 Jan 1998 JP
2969184 Nov 1999 JP
2001085272 Mar 2001 JP
WO 9301641 Aug 1993 WO
WO 93 16491 Aug 1993 WO
WO 9417556 Aug 1994 WO
WO 9506240 Mar 1995 WO
WO9531831 Nov 1995 WO
WO 9531831 Nov 1995 WO
WO 96 02924 Feb 1996 WO
WO 9619792 Aug 1996 WO
WO 9712349 Apr 1997 WO
WO 9718944 May 1997 WO
WO 9818156 Apr 1998 WO
WO 98 18186 Apr 1998 WO
WO 9840930 Sep 1998 WO
WO 9907189 Feb 1999 WO
WO 99 10929 Mar 1999 WO
WO 9910929 Mar 1999 WO
WO 99 10939 Mar 1999 WO
WO 99 21233 Apr 1999 WO
WO 99 30432 Jun 1999 WO
WO 99 39373 Aug 1999 WO
WO 99 40631 Aug 1999 WO
WO 9940631 Aug 1999 WO
WO 9953371 Oct 1999 WO
WO 9954936 Oct 1999 WO
WO 99 54936 Oct 1999 WO
WO 9966540 Dec 1999 WO
WO 0033063 Jun 2000 WO
WO 0036666 Jun 2000 WO
WO 0103126 Jan 2001 WO
WO 0106442 Jan 2001 WO
WO 0108241 Feb 2001 WO
WO 01 15233 Mar 2001 WO
WO 0117029 Mar 2001 WO
WO 0117041 Mar 2001 WO
WO 0117041 Mar 2001 WO
WO 0127998 Apr 2001 WO
WO 0146987 Jun 2001 WO
WO 0147044 Jun 2001 WO
WO 0147044 Jun 2001 WO
WO 01 47045 Jun 2001 WO
WO 0147044 Jun 2001 WO
WO 0147044 Jun 2001 WO
WO 0173109 Oct 2001 WO
WO 0173109 Oct 2001 WO
WO 0205360 Jan 2002 WO
WO 0205361 Jan 2002 WO
WO 0215264 Feb 2002 WO
WO 02 19443 Mar 2002 WO
WO0219443 Mar 2002 WO
WO 0229912 Apr 2002 WO
WO 0243071 May 2002 WO
WO 0247183 Jun 2002 WO
WO0247183 Jun 2002 WO
WO 02065557 Aug 2002 WO
WO 02071139 Sep 2002 WO
WO 02071505 Sep 2002 WO
WO 02076924 Oct 2002 WO
WO 02091495 Nov 2002 WO
WO 02095805 Nov 2002 WO
WO 02095805 Nov 2002 WO
WO 02099907 Dec 2002 WO
WO 02099908 Dec 2002 WO
WO 03046922 Jun 2003 WO
WO 03067680 Aug 2003 WO
WO 03069552 Aug 2003 WO
WO 03081671 Oct 2003 WO
WO 03095175 Nov 2003 WO
WO 2004032257 Apr 2004 WO
WO 2004042837 May 2004 WO
WO 2004042837 May 2004 WO
WO 2004007194 Jun 2004 WO
WO 2004007194 Jun 2004 WO
WO 2004047144 Jun 2004 WO
WO 2004083859 Sep 2004 WO
WO 00 79617 Dec 2004 WO
Related Publications (1)
Number Date Country
20050224787 A1 Oct 2005 US