Patent Application
20190182915
The present disclosure relates to a substrate processing apparatus, a method of manufacturing a semiconductor device, and a recording medium.
As one of the processes of manufacturing a semiconductor device, there is available, for example, a modifying process represented by an annealing process for heating a substrate in a process chamber with the use of a heating device to change the composition or crystal structure in a thin film formed on a surface of the substrate or to restore a crystal defect or the like in the formed thin film. In recent semiconductor devices, miniaturization and high integration have become remarkable. Accordingly, it is required to perform a modifying process to a high-density substrate on which a pattern having a high aspect ratio is formed. As a method for modifying such a high-density substrate, for example, a heat treatment method using a microwave has been studied.
In a heat treatment using a microwave of the related art, there may be a case where a substrate may not be uniformly heated due to the substrate being deformed during the heat treatment.
Some embodiments of the present disclosure provide an electromagnetic wave heat treatment technique capable of suppressing deformation or damage of a substrate.
According to some embodiments of the present disclosure, there is provided a technique that includes: a process chamber in which at least one substrate is processed; at least one heating device configured to heat the at least one substrate using an electromagnetic wave; a non-contact type temperature measurement device configured to measure a temperature of the at least one substrate; and a controller configured to perform control so as to acquire temperature data measured by the temperature measurement device, compare the measured temperature from the temperature data with a preset upper limit temperature and a preset lower limit temperature, lower an output of the at least one heating device or turn off a power supply of the at least one heating device when the measured temperature from the temperature data is higher than the upper limit temperature, and lower an output of the at least one heating device or turn off a power supply of the at least one heating device when the measured temperature from the temperature data is lower than the lower limit temperature.
Embodiments of the present disclosure will be now described in detail with reference to the drawings. Like or equivalent components, members, and processes illustrated in each drawing are given like reference numerals and a repeated description thereof will be properly omitted. Further, the embodiments are presented by way of example only, and are not intended to limit the present disclosure, and any feature or combination thereof described in the embodiments may not necessarily be essential to the present disclosure.
Hereinafter, a first embodiment of the present disclosure will be described with reference to the drawings.
In the present embodiment, the substrate processing apparatus 100 according to the present disclosure is configured as a single-wafer-type heat treatment apparatus for performing various heat treatments on a wafer. In the present embodiment, the substrate processing apparatus 100 will be described as an apparatus that performs an annealing process (modifying process) using an electromagnetic wave to be described later.
As shown in
A mounting stand 210 is installed below the reaction tube 103, and a boat 217 as a substrate holder for holding a wafer 200 as a substrate is mounted on an upper surface of the mounting stand 210. In the boat 217, a wafer 200 to be processed and quartz plates 101a and 101b as heat insulating plates placed vertically above and below the wafer 200 so as to sandwich the wafer 200 are held at predetermined intervals. Instead of the quartz plates 101a and 101b, it may be possible to mount components having a function as susceptors (also referred to as radiation plates or thermo-uniformity plates) (not shown), for example, silicon plates (Si plates), silicon carbide plates (SiC plates) or the like, which are made of a material such as a dielectric material or the like that is self-heated by absorbing an electromagnetic wave and which are configured to indirectly heat the wafer 200. Furthermore, the susceptors may be mounted on an outer side of the wafer 200 and on inner sides of the quartz plate 101a and 101b. That is, the wafer 200 may be sandwiched by the susceptors, and the susceptors may be sandwiched between the quartz plates 101a and 101b (may be disposed between the wafer 200 and the quartz plate 101a and between the wafer 200 and the quartz plate 101b). By configuring in this manner, it is possible to more efficiently and uniformly heat the wafer 200. In the present embodiment, the quartz plates 101a and 101b are the same component and will be referred to as a quartz plate 101 hereinafter unless there is a need to specifically distinguish them from each other.
In the side wall of the mounting stand 210, a protrusion portion (not shown) protruding in a radial direction of the mounting stand 210 is installed on the side of a bottom surface of the mounting stand 210. This protrusion portion comes close to or makes contact with a partition plate 204 installed between the process chamber 201 and a transfer space 203 to be described later, thereby preventing the atmosphere in the process chamber 201 from moving into the transfer space 203 or preventing the atmosphere in the transfer space 203 from moving into the process chamber 201.
The case 102 as an upper container has, for example, a circular cross section, and is configured as a flat closed container. Further, a transfer container 202 as a lower container is made of a metallic material such as aluminum (Al), stainless steel (SUS) or the like, quartz, or the like. A transfer area 203 for transferring a wafer 200 such as a silicon wafer or the like is formed under the process container. A space surrounded by the case 102 or a space surrounded by the reaction tube 103 and located above the partition plate 204 is sometimes referred to as a process chamber 201 or a reaction area 201 as a process space. A space surrounded by the transfer container 202 and located below the partition plate 204 is sometimes referred to as a transfer area 203 as a transfer space. The process chamber 201 and the transfer area 203 are not limited to being vertically adjacent to each other as in the present embodiment, but may be configured to be adjacent to each other in the horizontal direction. Alternatively, only the process chamber 201 may be installed without installing the transfer area 203.
A substrate loading/unloading port 206 adjacent to a gate valve 205 is installed on a side surface of the transfer container 202. The wafer 200 moves to and from a substrate transfer chamber (not shown) via the substrate loading/unloading port 206.
An electromagnetic wave supply part as a heating device, which will be described in detail later, is installed on the side surface of the case 102. An electromagnetic wave such as a microwave or the like supplied from the electromagnetic wave supply part is introduced into the process chamber 201 to heat the wafer 200 and the like, thereby processing the wafer 200.
The mounting stand 210 is supported by a shaft 255 as a rotating shaft. The shaft 255 penetrates the bottom portion of the transfer container 202. Furthermore, the shaft 255 is connected to a drive mechanism 267 that performs a rotating or elevating operation outside the transfer container 202. By driving the drive mechanism 267 to rotate or elevate the shaft 255 and the mounting stand 210, it is possible to rotate or elevate the wafer 200 placed on the boat 217. A periphery of a lower end portion of the shaft 255 is covered by a bellows 212, whereby an inside of the process chamber 201 and the transfer area 203 are kept airtight.
At the time of transferring the wafer 200, the mounting stand 210 is lowered such that an upper surface of the mounting stand 210 is located at a position (wafer transfer position) corresponding to the substrate loading/unloading port 206. At the time of processing the wafer 200, as shown in
An exhaust part for exhausting an atmosphere in the process chamber 201 is installed below the process chamber 201 and on the outer peripheral side of the mounting stand 210. As shown in
An exhaust part (also referred to as an exhaust system or an exhaust line) is mainly constituted by the exhaust port 221, the exhaust pipe 231 and the pressure regulator 244. An exhaust port may be installed to surround the mounting stand 210 so that the gas can be exhausted from an entire periphery of the wafer 200. In addition, the vacuum pump 246 may be added to the configuration of the exhaust part.
In the cap flange 104, there is installed a gas supply pipe 232 for supplying processing gases for various substrate processing processes such as an inert gas, a precursor gas, a reaction gas and the like into the process chamber 201. In the gas supply pipe 232, a mass flow controller (MFC) 241 which is a flow rate controller (flow rate control part) and a valve 243 which is an opening/closing valve are installed sequentially from the upstream side. For example, a nitrogen (N2) gas source for supplying a nitrogen (N2) gas as an inert gas is connected to the upstream side of the gas supply pipe 232. The nitrogen (N2) gas is supplied into the process chamber 201 via the MFC 241 and the valve 243. In the case of using plural kinds of gases at the time of substrate processing, the plural kinds of gases can be supplied by using a configuration in which a gas supply pipe having an MFC as a flow rate controller and a valve as an opening/closing valve installed sequentially from the upstream side is connected to the gas supply pipe 232 on the downstream side of the valve 243. A gas supply pipe provided with an MFC and a valve may be installed for each type of gas.
A gas supply system (gas supply part) is mainly constituted by the gas supply pipe 232, the MFC 241 and the valve 243. When an inert gas is supplied to the gas supply system, the gas supply system is also referred to as an inert gas supply system. As the inert gas, in addition to the N2 gas, it may be possible to use, for example, a rare gas such as an Ar gas, a He gas, a Ne gas, a Xe gas or the like.
In the cap flange 104, there is installed a temperature sensor 263 as a non-contact type temperature measurement device. By adjusting an output of a microwave oscillator 655 to be described below on the basis of the temperature information detected by the temperature sensor 263, it is possible to heat the substrate so that a substrate temperature has a desired temperature distribution. The temperature sensor 263 is constituted by, for example, a radiation thermometer such as an IR (Infrared Radiation) sensor or the like. The temperature sensor 263 is installed so as to measure a surface temperature of a quartz plate 101a or a surface temperature of the wafer 200. In the case where the aforementioned susceptor as a heating element is installed, the temperature sensor 263 may be configured to measure a surface temperature of the susceptor. When the temperature of the wafer 200 (wafer temperature) is referred to in the present disclosure, it may mean a wafer temperature converted by temperature conversion data to be described below, i.e., an estimated wafer temperature, a temperature obtained by directly measuring the temperature of the wafer 200 with the temperature sensor 263, or both.
As shown in
The means for measuring a temperature of a substrate is not limited to the above-described radiation thermometer. The temperature measurement may be performed by using a thermocouple or may be performed by using both the thermocouple and a non-contact type thermometer. However, when temperature measurement is performed using the thermocouple, it is necessary to arrange the thermocouple near the wafer 200 to perform temperature measurement. That is, it is necessary to arrange the thermocouple in the process chamber 201. Therefore, the thermocouple itself is heated by the microwave supplied from the microwave oscillator to be described below. This makes it impossible to accurately measure the temperature. Accordingly, a non-contact type thermometer may be used as the temperature sensor 263 in some embodiments. Further, the temperature sensor 263 is not limited to being installed on the cap flange 104, but may be installed on the mounting stand 210. Further, the temperature sensor 263 may not only be directly installed on the cap flange 104 or the mounting stand 210 but also be configured to indirectly measure the temperature by reflecting radiation light from a measurement window formed in the cap flange 104 or the mounting stand 210 through the use of a mirror or the like. In addition, the number of the installed temperature sensor 263 is not limited to one, but a plurality of temperature sensors may be installed.
Electromagnetic wave introduction ports 653-1 and 653-2 are installed on a side wall of the case 102. One end of each of waveguides 654-1 and 654-2 for supplying an electromagnetic wave into the process chamber 201 is connected to each of the electromagnetic wave introduction ports 653-1 and 653-2. Microwave oscillators (electromagnetic wave sources) 655-1 and 655-2 as heat sources for supplying an electromagnetic wave into the process chamber 201 to heat an interior of the process chamber 201 are connected to the other ends of the waveguides 654-1 and 654-2. Each of the microwave oscillators 655-1 and 655-2 supplies an electromagnetic wave such as a microwave or the like to the waveguides 654-1 and 654-2. As the microwave oscillators 655-1 and 655-2, a magnetron, a klystron or the like may be used. Hereinafter, the electromagnetic wave introduction ports 653-1 and 653-2, the waveguides 654-1 and 654-2 and the microwave oscillators 655-1 and 655-2 will be described as an electromagnetic wave introduction port 653, a waveguide 654 and a microwave oscillator 655, respectively, unless there is a particular need to distinguish them.
A frequency of the electromagnetic wave generated by the microwave oscillator 655 may be controlled so as to fall within a frequency range of from 13.56 MHz to 24.125 GHz in some embodiments. The frequency of the electromagnetic wave may be controlled to become a frequency of 2.45 GHz or 5.8 GHz in some embodiments. In this regard, the frequencies of the microwave oscillators 655-1 and 655-2 may be the same or may be different from each other. In the present embodiment, two microwave oscillators 655 are arranged on a side surface of the case 102. However, the present disclosure is not limited thereto and one or more microwave oscillators 655 may be installed. Further, the microwave oscillators 655 may be installed on different surfaces such as the opposing side surfaces of the case 102. An electromagnetic wave supply part (also referred to as an electromagnetic wave supply device, a microwave supply part, or a microwave supply device) as a heating device is mainly constituted by the microwave oscillators 655-1 and 655-2, the waveguides 654-1 and 654-2, and the electromagnetic wave introduction ports 653-1 and 653-2.
A controller 121 to be described below is connected to each of the microwave oscillators 655-1 and 655-2. The temperature sensor 263 for measuring the temperature of the quartz plate 101a or 101b or the wafer 200 contained in the process chamber 201 is connected to the controller 121. The temperature sensor 263 measures the temperature of the quartz plate 101 or the wafer 200 according to the above-described method and transmits the measured temperature to the controller 121. The controller 121 controls the output of the microwave oscillators 655-1 and 655-2, thereby controlling the heating of the wafer 200. As the method of controlling the heating performed by the heating device, it may be possible to use a method of controlling the heating of the wafer 200 by controlling the voltage inputted to the microwave oscillator 655, a method of controlling the heating of the wafer 200 by changing a ratio of a time to turn on the power supply of the microwave oscillator 655 and a time to turn off the power supply of the microwave oscillator 655, and the like.
In this regard, the microwave oscillators 655-1 and 655-2 are controlled by the same control signal transmitted from the controller 121. However, the present disclosure is not limited thereto. The microwave oscillators 655-1 and 655-2 may be respectively controlled by transmitting control signals from the controller 121 to the microwave oscillators 655-1 and 655-2 respectively.
As shown in
The memory device 121c is configured by, for example, a flash memory, a hard disc drive (HDD), or the like. A control program for controlling the operations of the substrate processing apparatus, a process recipe in which sequences and conditions of an annealing (modifying) process are written, and the like are readably stored in the memory device 121c. The process recipe functions as a program for causing the controller 121 to execute each sequence in a substrate processing process, which will be described below, to obtain a predetermined result. Hereinafter, the process recipe and the control program will be generally and simply referred to as a “program.” Further, the process recipe is simply referred to as a recipe. When the term “program” is used herein, it may indicate a case of including only the process recipe, a case of including only the control program, or a case of including both the process recipe and the control program. The RAM 121b is configured as a memory area (a work area) in which a program or data read by the CPU 121a is temporarily stored.
The I/O port 121d is connected to the MFC 241, the valve 243, the pressure sensor 245, the APC valve 244, the vacuum pump 246, the temperature sensor 263, the drive mechanism 267, the microwave oscillator 655, and the like.
The CPU 121a is configured to read the control program from the memory device 121c and execute the same. The CPU 121a is also configured to read the recipe from the memory device 121c according to an input of an operation command from the input/output device 122. The CPU 121a is configured to control, according to the contents of the recipe thus read, a flow rate adjustment operation of various gases performed by the MFC 241, an opening/closing operation of the valve 243, a pressure adjustment operation performed by the APC valve 244 based on the pressure sensor 245, an activation and stoppage of the vacuum pump 246, an output adjustment operation of the microwave oscillator 655 based on the temperature sensor 263, a rotation, a rotation speed adjustment or a raising/lowering operation of the mounting stand 210 (or the boat 217) performed by the drive mechanism 267, and the like.
The controller 121 may be configured by installing, in a computer, the above-described program stored in an external memory device (e.g., a magnetic disk such as a hard disk, an optical disk such as a CD, a magneto-optical disk such as an MO, or a semiconductor memory such as a USB memory) 123. The memory device 121c or the external memory device 123 is configured as a computer-readable recording medium. Hereinafter, the memory device 121c and the external memory device 123 will be generally and simply referred to as a “recording medium.” When the term “recording medium” is used herein, it may indicate a case of including only the memory device 121c, a case of including only the external memory device 123, or a case of including both the memory device 121c and the external memory device 123. The provision of the program to the computer may be performed by using a communication means such as the Internet or a dedicated line without using the external memory device 123.
Next, a process of manufacturing a semiconductor device using the process furnace of the above-described substrate processing apparatus 100, for example, an example of a method of modifying (crystallizing) an amorphous silicon film as a silicon-containing film formed on a substrate will be described with reference to a processing flow shown in
When the term “wafer” is used herein, it may refer to “a wafer itself” or “a laminated body of a wafer and a predetermined layer or film formed on the surface of the wafer.” When the phrase “a surface of a wafer” is used herein, it may refer to “a surface of a wafer itself” or “a surface of a predetermined layer or the like formed on a wafer.” The expression “a predetermined layer is formed on a wafer” as used herein may mean that “a predetermined layer is directly formed on a surface of a wafer itself” or that “a predetermined layer is formed on a layer or the like formed on a wafer.” When the term “substrate” is used herein, it may be synonymous with the term “wafer.”
As shown in
After the loading of the boat 217 into the process chamber 201 is completed, the atmosphere in the process chamber 201 is controlled so that the pressure in the process chamber 201 becomes a predetermined pressure (for example, 10 to 102,000 Pa). Specifically, while performing evacuation by the vacuum pump 246, the valve opening degree of the pressure regulator 244 is feedback-controlled based on the pressure information detected by the pressure sensor 245. Thus, the pressure in the process chamber 201 is set to a predetermined pressure. At the same time, the electromagnetic wave supply part may be controlled to perform pre-heating and may be controlled to perform heating to a predetermined temperature (S402). When the temperature is raised to a predetermined substrate processing temperature by the electromagnetic wave supply part, the temperature raising may be performed by an output smaller than an output of a modifying step to be described below so that the wafer 200 is not deformed or broken in some embodiments. In the case where substrate processing is performed under an atmospheric pressure, after only the in-furnace temperature is adjusted without adjusting the in-furnace pressure, the process may be controlled so as to proceed to an inert gas supply step S403 to be described below.
After the pressure and the temperature in the process chamber 201 are controlled to predetermined values in the in-furnace pressure/temperature adjustment step S402, the drive mechanism 267 rotates the shaft 255 and rotates the wafer 200 via the boat 217 on the mounting stand 210. At this time, an inert gas such as a nitrogen gas or the like is supplied through the gas supply pipe 232 (S403). Furthermore, at this time, the pressure in the process chamber 201 is regulated to a predetermined value falling within a range of 10 Pa to 102000 Pa, for example, 101300 Pa or more and 101650 Pa or less. The shaft 255 may be rotated during the substrate loading step S401, i.e., after the wafer 200 has been loaded into the process chamber 201.
When the interior of the process chamber 201 is maintained at a predetermined pressure, the microwave oscillator 655 supplies a microwave into the process chamber 201 via the above-described respective parts. By supplying the microwave into the process chamber 201, the wafer 200 is heated to a temperature of 100 degrees C. or more and 1000 degrees C. or less, 600 degrees C. or more and 900 degrees C. or less in some embodiments, or 800 degrees C. or more and 850 degrees C. or less in some embodiments. By performing the substrate processing at such a temperature, the substrate is processed under the temperature at which the wafer 200 efficiently absorbs the microwave. This makes it possible to increase the speed of the modifying process. In other words, if the wafer 200 is processed at a temperature lower than 100 degrees C. or higher than 1000 degrees C., the surface of the wafer 200 is degraded and becomes difficult to absorb the microwave. Therefore, it becomes difficult to heat the wafer 200. Accordingly, the substrate processing may be performed in the above-described temperature range in some embodiments.
In the present embodiment in which heating is performed by an electromagnetic wave heating method, a standing wave is generated in the process chamber 201. On the wafer 200 (also the susceptor in the case where the susceptor is placed), there are generated a locally-heated concentrated heating region (hot spot) and a remaining unheated region (non-heating region). By controlling the ON/OFF of the power supply of the electromagnetic wave supply part in order to suppress deformation of the wafer 200 (also the susceptor in the case where the susceptor is placed), it is possible to suppress generation of a hot spot on the wafer 200.
As described above, the temperature sensor 263 is a non-contact type temperature sensor. If the wafer 200 (or the susceptor in the case where the susceptor is placed) as a measurement target is deformed or broken, the position of the wafer 200 to be monitored by the temperature sensor or the measurement angle with respect to the wafer 200 is changed. Therefore, the measurement value (monitoring value) is inaccurate, and the measurement temperature is abruptly changed. In the present embodiment, the abrupt change in the measurement temperature of the radiation thermometer caused by the deformation or breakage of the measurement target is used as a trigger for turning on or off the electromagnetic wave supply part.
Specifically, an upper limit and a lower limit of a threshold temperature based on the substrate processing temperature are set in advance. The substrate processing is controlled by the controller 121 so that the substrate processing is performed at a temperature not exceeding the upper limit of the threshold temperature and not falling below the lower limit of the threshold temperature. The upper limit of the threshold temperature is a temperature higher than the substrate processing temperature and may be set to fall within the substrate processing temperature +5% in some embodiments. The lower limit of the threshold temperature is a temperature lower than the substrate processing temperature and may be set to fall within the substrate processing temperature −5% in some embodiments. For example, when the substrate processing temperature is 825 degrees C., the upper limit temperature may be set to a temperature higher than 825 degrees C. and equal to or lower than 866 degrees C. with having an upper limit of about 866 degrees C. which is +5% of 825 degrees C., and the lower limit temperature may be set to a temperature lower than 825 degrees C. and equal to or higher than 783 degrees C. with having a lower limit of about 783 degrees C. which is −5% of 825 degrees C. If the setting criterion for the upper limit temperature and the lower limit temperature is set higher than +5% of the substrate processing temperature or lower than −5% of the substrate processing temperature, the deformation amount of the wafer 200 becomes large. In the worst case, there is a possibility that the wafer 200 is broken.
In the case where a modifying step is performed at the upper limit temperature and the lower limit temperature described above, if it is detected that the temperature of the wafer 200 measured by the temperature sensor 263 becomes lower than 783 degrees C. which is the lower limit temperature at timing A as shown in
Even at timing C at which the temperature of the wafer 200 becomes higher than the upper limit temperature, the controller 121 operates in the same manner as at the timing A for the lower limit temperature. That is, when the temperature of the wafer 200 measured by the temperature sensor 263 becomes higher than the upper limit temperature of 866 degrees C., the controller 121 turns off the microwave oscillator 655. By turning off the microwave oscillator 655 and stopping the supply of the microwave, the heating of the wafer 200 is stopped to wait until the temperature of the wafer 200 falls to become equal to or lower than the upper limit temperature, i.e., 866 degrees C. at which the substrate can be processed. Thereafter, at timing D when the temperature of the wafer 200 becomes a temperature at which the substrate can be processed, the controller 121 turns on the microwave oscillator 655 to start heating the wafer 200 again.
By controlling the microwave oscillator 655 as described above, the wafer 200 is heated to modify (crystallize) the amorphous silicon film formed on the surface of the wafer 200 into a polysilicon film. That is, it becomes possible to uniformly modify the wafer 200. In the case where the measured temperature of the wafer 200 becomes high or low beyond the above-mentioned threshold value, the output of the microwave oscillator 655 may be controlled to be decreased without turning off the microwave oscillator 655, whereby the temperature of the wafer 200 may be set to fall within a predetermined range. In this case, when the temperature of the wafer 200 returns to the temperature falling within the predetermined range, the output of the microwave oscillator 655 is controlled to be increased.
When a preset processing time elapses, the rotation of the boat 217, the supply of the gas, the supply of the microwave and the exhaust through the exhaust pipe are stopped.
After restoring the pressure in the process chamber 201 to the atmospheric pressure, the drive mechanism 267 lowers the mounting stand 210 to open a furnace port and unloads the boat 217 to the transfer space 203 (boat unloading). Thereafter, the wafer 200 placed on the boat is carried out to the transfer chamber located outside the transfer space 23 (S405).
By repeating the above operations, the wafer 200 is modified.
According to the present disclosure, one or more of the following effects may be obtained.
(a) By setting the upper limit temperature and the lower limit temperature based on the substrate processing temperature and controlling the heating device, it is possible to prevent the wafer from being deformed or damaged during substrate processing.
(b) By setting the upper limit temperature and the lower limit temperature to be higher or lower than the substrate processing temperature in the range of higher than 0% to 5% or less of the substrate processing temperature, it is possible to allow the wafer temporarily deformed by heating to restore its original shape after the substrate processing, and it is possible to suppress the deformation or breakage of the wafer.
(c) After lowering the output of the heating device by the upper limit temperature or the lower limit temperature or after turning off the power supply of the heating device, if the wafer temperature, i.e., the temperature data is lower than the upper limit temperature or higher than the lower limit temperature, the output of the heating device is increased or the power supply of the heating device is turned on. This makes it possible to efficiently heat the wafer and to efficiently perform the wafer processing.
The substrate processing apparatus according to the present embodiment is not limited to the aforementioned embodiment but may be modified as in the following modification.
In the first embodiment, the upper limit temperature and the lower limit temperature as threshold values are set based on the substrate processing temperature. However, the present disclosure is not limited thereto. The heating device may be controlled based on a temperature change rate per unit time. With such a configuration, deformation or breakage of the wafer 200 can be suppressed more accurately compared to the case where the upper limit temperature and the lower limit temperature are set. This makes it possible to efficiently perform the wafer processing.
As shown in
While the present disclosure has been described with reference to the embodiments, the respective embodiments and modifications described above may be used in combination as appropriate and the effects thereof may also be obtained.
For example, in each of the embodiments described above, there has been described the process of modifying an amorphous silicon film as a film containing silicon as a main component into a polysilicon film. However, the present disclosure is not limited thereto. The film formed on the surface of the wafer 200 may be modified by supplying a gas containing at least one of oxygen (0), nitrogen (N), carbon C) and hydrogen (H). For example, in the case where a hafnium oxide film (HfxOy film) as a high dielectric film is formed on the wafer 200, a microwave may be supplied to heat the hafnium oxide film while supplying a gas containing oxygen. This makes it possible to supplement the defective oxygen in the hafnium oxide film and to improve the characteristics of the high dielectric film.
Although the hafnium oxide film is shown herein, the present disclosure is not limited thereto. In some embodiments, the present disclosure may be applied to a case of modifying an oxide film containing a metal element including at least one of aluminum (Al), titanium (Ti), zirconium (Zr), tantalum (Ta), niobium (Nb), lanthanum (La), cerium (Ce), yttrium (Y), barium (Ba), strontium (Sr), calcium (Ca), lead (Pb), molybdenum (Mo), tungsten (W) and the like, i.e., a metal-based oxide film. That is, the aforementioned film-forming sequence may be applied to a case of modifying a TiOCN film, a TiOC film, a TiON film, a TiO film, a ZrOCN film, a ZrOC film, a ZrON film, a ZrO film, a HfOCN film, a HfOC film, a HfON film, a HfO film, a TaOCN film, a TaOC film, a TaON film, a TaO film, a NbOCN film, a NbOC film, a NbON film, a NbO film, an AlOCN film, an AlOC film, an AlON film, an AlO film, a MoOCN film, a MoOC film, a MoON film, a MoO film, a WOCN film, a WOC film, a WON film or a WO film, which is formed on the wafer 200 in some embodiments.
In addition to the high dielectric film, a film doped with impurities and containing silicon as a main component may be heated. Examples of the film containing silicon as a main component include Si-based oxide films such as a silicon nitride film (SiN film), a silicon oxide film (SiO film), a silicon oxycarbide film (SiOC film), a silicon oxycarbonitride film (SiOCN film), a silicon oxynitride film (SiON film) or the like. Examples of the impurities include at least one of bromine (B), carbon (C), nitrogen (N), aluminum (Al), phosphorus (P), gallium (Ga), arsenic (As) and the like.
Further, the film may be a resist film based on at least one of a polymethyl methacrylate (PMMA) resin, an epoxy resin, a novolac resin, a polyvinyl phenyl resin and the like.
Although a process of manufacturing a semiconductor device has been described above, the present disclosure is not limited thereto but may be applied to a substrate processing technique such as a patterning process of a liquid crystal panel manufacturing process, a patterning process of a solar cell manufacturing process, a patterning process of a power device manufacturing process or the like.
As described above, according to the present disclosure, it is possible to provide an electromagnetic wave heat treatment technique capable of suppressing deformation or breakage of a substrate.
While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the disclosures. Indeed, the embodiments described herein may be embodied in a variety of other forms. Furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the disclosures. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the disclosures.
This application is a Bypass Continuation Application of PCT International Application No. PCT/JP2016/075488, filed on Aug. 31, 2016, the disclosure of which is incorporated herein in its entirety by reference.
| Number | Date | Country | |
|---|---|---|---|
| Parent | PCT/JP2016/075488 | Aug 2016 | US |
| Child | 16280458 | US |
