Claims
- 1. A surface-treated metal body which comprises a cylindrical metal body for an electrophotographic photoconductive member having a plurality of spherical indent recesses as irregularities formed on the surface, and further having fine irregularities formed in the spherical indent recesses, wherein the ratio of the radius of curvature R and the width r of the spherical indent recesses are in a range of 0.035.ltoreq.r/R.ltoreq.0.5 and wherein the radius of curvature R of the spherical indent recesses is in a range of 0.1 mm.ltoreq.R.ltoreq.2.0 mm.
- 2. A surface-treated metal body according to claim 1, wherein the irregularities are formed by spherical indent recesses having substantially equal radius of curvature and width.
- 3. A photoconductive member capable of being scanned with a laser beam comprising a photoconductive layer on a support, the support being a surface-treated metal body having irregularities formed through a plurality of spherical indent recesses on the surface and also having fine irregularities formed in the spherical indent recesses, wherein the ratio of the radius of curvature R and the width r of the spherical indent recesses are in a range of 0.035.ltoreq.r/R.ltoreq.0.5 and wherein the radius of curvature R of the spherical indent recesses is in a range of 0.1 mm.ltoreq.R.ltoreq.2.0 mm.
- 4. A photoconductive member according to claim 3, wherein the irregularities are formed through the spherical indent recesses of substantially same radius of curvature and width.
- 5. A photoconductive member according to any one of claims 3 to 4, wherein the width r of the spherical indent recesses is in a range of 0.02 mm.ltoreq.r.ltoreq.0.5 mm.
- 6. A photoconductive member according to any one of claims 3 or 4, wherein the levels of the fine irregularities in the spherical indent recesses is in a range of 0.5 to 20 .mu.m.
- 7. A photoconductive member according to claim 3, wherein the support is composed of aluminum alloy.
- 8. A photoconductive member according to claim 3, wherein the support is an aluminum alloy cylinder.
- 9. A photoconductive member according to claim 3, wherein the photoconductive layer contains an organic photoconductive material.
- 10. A photoconductive member according to claim 3, wherein the photoconductive layer comprises a charge generation layer and a charge transport layer.
- 11. A photoconductive member according to claim 10, wherein the thickness of the charge generation layer ranges from 0.01-1.0.mu..
- 12. A photoconductive member according to claim 10, wherein the thickness of the charge transport layer ranges from 5-20.mu..
- 13. A photoconductive member according to claim 10, wherein the charge generation layer comprises a mixture of 20 to 300 parts by weight of a binder per 100 parts by weight of a charge-generating material.
- 14. A photoconductive member according to claim 7, wherein the photoconductive layer is composed of an amorphous silicon.
- 15. A photoconductive member according to claim 7, wherein a charge injection-preventing layer is spaced between the support and the photoconductive layer.
- 16. A photoconductive member according to claim 15, wherein the charge injection-preventing layer is composed of an amorphous silicon containing at least one of hydrogen atoms and halogen atoms.
- 17. A photoconductive member according to claim 16, wherein the charge injection-preventing layer contains at least one member of elements in Group III or Group V of the Periodic Table.
- 18. A photoconductive member according to claim 7, wherein a barrier layer is spaced between the support and the photoconductive layer.
- 19. A photoconductive member according to claim 18, wherein the barrier layer is composed of an electrically insulating material.
- 20. A photoconductive member according to claim 18, wherein the barrier layer is composed of a material selected from the group consisting of Al.sub.2 O.sub.3, SiO.sub.2, Si.sub.3 N.sub.4, and polycarbonate.
- 21. A photoconductive member according to claim 15, wherein the thickness of the charge injection-preventing layer ranges from 0.01 to 10.mu..
- 22. A photoconductive member according to claim 14, wherein the amorphous silicon is prepared by the glow discharge method.
- 23. A photoconductive member according to claim 7, wherein a surface protective layer is on the photoconductive member.
- 24. A photoconductive member according to claim 23, wherein the thickness of the surface protective layer ranges from 0.01-10.mu..
- 25. A photoconductive member according to claim 23, wherein the surface protective layer is composed of a material selected from the group consisting of Si.sub.x C.sub.1-x, Si.sub.x N.sub.1-x, and Si.sub.x O.sub.1-x (0<x<1).
- 26. A photoconductive member according to claim 7, wherein the thickness of the photoconductive layer ranges from 1-100.mu..
Priority Claims (1)
Number |
Date |
Country |
Kind |
60-176172 |
Aug 1985 |
JPX |
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Parent Case Info
This application is a continuation of application Ser. No. 894,958, filed Aug. 8, 1986, now abandoned.
US Referenced Citations (8)
Foreign Referenced Citations (2)
Number |
Date |
Country |
3321648 |
Dec 1983 |
DEX |
753692 |
Nov 1953 |
GBX |
Continuations (1)
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Number |
Date |
Country |
Parent |
894958 |
Aug 1986 |
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