Statement of the Technical Field
The inventive arrangements relate to switches, such as broad-band cantilever microelectromechanical systems (MEMS) switches.
Description of Related Art
Communications systems, such as broadband satellite communications systems, commonly operate at anywhere from 300 MHz (UHF band) to 300 GHz (mm-wave band). Such examples include TV broadcasting (UHF band), land mobile (UHF band), global positioning systems (GPS) (UHF band), meteorological (C band), and satellite TV (SHF band). Most of these bands are open to mobile and fixed satellite communications. Higher frequency bands typically come with larger bandwidths, which yield higher data rates. Switching devices used in these types of systems need to operate with relatively low losses, e.g., less than one decibel (dB) of insertion loss, at these ultra-high frequencies.
Miniaturized switches such as monolithic microwave integrated circuit (MMIC) and MEMS switches are commonly used in broadband communications systems due to stringent size constraints imposed on the components of such systems, particularly in satellite-based applications. Currently, the best in class switches operate at 20 GHz with cumulative attributes such as insertion losses of approximately 0.8 dB, return losses of approximately 17 dB, and isolation levels of approximately 40 dB.
Three-dimensional microstructures can be formed by utilizing sequential build processes. For example, U.S. Pat. Nos. 7,012,489 and 7,898,356 describe methods for fabricating coaxial waveguide microstructures. These processes provide an alternative to traditional thin film technology, but also present new design challenges pertaining to their effective utilization for advantageous implementation of various devices such as miniaturized switches.
Embodiments of switches include an electrically-conductive ground housing, and a first electrical conductor suspended within and electrically isolated from the ground housing. The switches further include an electrically-conductive second housing, and a second electrical conductor suspended within and electrically isolated from the second housing. The switches also have a third electrical conductor configured to move between a first position at which the third electrical conductor is electrically isolated from the first and second electrical conductors, and a second position at which the third electrical conductor is in electrical contact with the first and second electrical conductors. The switches further include an actuator comprising an electrically-conductive base and an electrically-conductive arm having a first end restrained by the base. The third electrical conductor is supported by the arm, and the arm is operative to deflect and thereby move the third electrical conductor between the first and second positions.
Embodiments will be described with reference to the following drawing figures, in which like numerals represent like items throughout the figures and in which:
The invention is described with reference to the attached figures. The figures are not drawn to scale and they are provided merely to illustrate the instant invention. Several aspects of the invention are described below with reference to example applications for illustration. It should be understood that numerous specific details, relationships, and methods are set forth to provide a full understanding of the invention. One having ordinary skill in the relevant art, however, will readily recognize that the invention can be practiced without one or more of the specific details or with other methods. In other instances, well-known structures or operation are not shown in detail to avoid obscuring the invention. The invention is not limited by the illustrated ordering of acts or events, as some acts may occur in different orders and/or concurrently with other acts or events. Furthermore, not all illustrated acts or events are required to implement a methodology in accordance with the invention.
The figures depict a MEMS switch 10. The switch 10 can selectively establish and disestablish electrical contact between a first electronic component (not shown), and four other electronic components (also not shown) electrically connected to the switch 10. The switch 10 has a maximum height (“z” dimension) of approximately 1 mm; a maximum width (“y” dimension) of approximately 3 mm; and a maximum length (“x” dimension) of approximately 3 mm. The switch 10 is described as a MEMS switch having these particular dimensions for exemplary purposes only. Alternative embodiments of the switch 10 can be scaled up or down in accordance with the requirements of a particular application can be scaled up or down in accordance with the requirements of a particular application, including size, weight, and power (SWaP) requirements.
The switch 10 comprises a substrate 12 formed from a dielectric material such as silicon (Si), as shown in
The switch 10 comprises an input port 20. The input port 20 can be electrically connected to a first electronic device (not shown). The switch 10 also comprises a first output port 22; a second output port 24; a third output port 26; and a fourth output port 28, as shown in
The input port 20 comprises a ground housing 30 disposed on the ground plane 14. The ground housing 30 is formed from portions of the second through fifth layers of the electrically-conductive material, as shown in
The input port 20 further includes an electrically-conductive inner conductor 34 having a substantially rectangular cross section. The inner conductor 34 is formed as part of the third layer of the electrically-conductive material. The inner conductor 34 is positioned within the channel 32, as shown in
The inner conductor 34 is suspended within the channel 32 on electrically-insulative tabs 37, as illustrated in
The hub 50 comprises a substantially cylindrical contact portion 56, and a transition portion 58 that adjoins and extends from the contact portion 56, as depicted in
The first, second, third, and fourth outputs port 22, 24, 26, 28 are substantially identical. The following description of the first output port 22, unless otherwise noted, thus applies equally to the second, third, and fourth output ports 24, 26, 28.
The first output port 22 comprises a ground housing 60 disposed on the ground plane 14. The ground housing 60 adjoins the ground housing 30 of the input port 20. The ground housing 60 is formed from portions of the second through fifth layers of the electrically-conductive material. The ground housing 60 is substantially L-shaped when viewed from above, as shown in
The first output port 22 further includes an electrically-conductive inner conductor 64 having a substantially rectangular cross section. The inner conductor 64 is formed as part of the third layer of the electrically-conductive material. The inner conductor 64 is positioned within the channel 62, as shown in
The inner conductor 64 is suspended within the channel 62 on electrically-insulative tabs 37, in a manner substantially identical to the inner conductor 34 of the input port 20, as depicted in
The second output port 24 has an orientation that is substantially perpendicular to that of the first output port 22, as shown in
The switch 10 further comprises a first actuator 70; a second actuator 72; a third actuator 74; and a fourth actuator 76. The first, second, third, and fourth actuators 70, 72, 74, 76 are associated with the respective first, second, third, and fourth output ports 22, 24, 26, 28. The first, second, third, and fourth actuators 70, 72, 74, 76 are substantially similar. The following description of the first actuator 70 applies also to the second, third, and fourth actuators 72, 74, 76, except where otherwise indicated.
The first actuator 70 comprises an electrically-conductive base 80 disposed on the substrate 12, as shown in
The first actuator 70 moves the contact tab 52 between an open and a closed position. The first end of the contact tab 52 is spaced apart from the upper surface of the contact portion 56 of the hub 50 when the contact tab 52 is in the open position, as depicted in
The electrically-insulative third portion 90 of the arm 82a electrically isolates the fourth portion 92 of the arm 82a and the adjoining contact tab 52 from the second portion 88 of the of the arm 82a, thereby isolating the signal path within the switch 10 from the first and second portions 86, 88 of the arm 82a, and the base 80. The third portion 90 can be formed from a suitable dielectric material such as polyethylene, polyester, polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, polyimide, benzocyclobutene, SU8, etc., provided the material will not be attacked by the solvent used to dissolve the sacrificial resist during manufacture of the switch 10 as discussed below.
A first end of the contact tab 52 contacts an upper surface of the contact portion 56 of the hub 50 when the contact tab 52 is in the closed position, as depicted in
The magnitude of the respective air gaps between the contact tab 52 and the inner conductor 64 and hub 50 can be, for example, approximately 65 μm. The optimal value for the magnitude of the air gaps is application-dependent, and can vary with factors such as the stiffness, dimensions, and shape of the arm 82a, the magnitude of the shock and vibrations to which the switch 10 will be exposed, and the properties, e.g., Young's modulus, of the material from which the arms 82a are formed, etc.
The arm 82a deflects to facilitate movement of the associated contact tab 52 between the open and closed positions. The deflection results primarily from electrostatic attraction between the second portion 88 of the arm 82a and the underlying portion of the ground plane 14, which occurs as follows.
An end of the first portion 86 of the arm 82a adjoins the base 80 of the first actuator 70, and is thus rigidly constrained by the base 80, as shown in
The second portion 88 of the arm 82a, when energized, acts as an electrode, i.e., an electric field is formed around the second portion 88 due the voltage potential to which the second portion 88 is being subjected. The second portion 88 is positioned above, and thus overlaps the ground plane 14 as shown in
The arm 82a is configured to bend so as to facilitate the above-noted movement of the second portion 88 toward the ground plane 14. The voltage applied to the actuator 70, or “pull-in voltage,” should be sufficient to cause the arm 82a to undergo snap-through buckling, which helps to establish secure contact between the contact tab 52 and the hub 50 and inner conductor 64 when the contact tab 52 is in its closed position. For example, it is estimated that a pull-in voltage of approximately 129.6 volts is needed to achieve the exemplary 65 μm deflection of the contact tab 52 in the switch 10. The optimal pull-in voltage is application-dependent, and can vary with factors such as the required deflection of the contact tab 52, the stiffness, dimensions, and shape of the arms 82a, the properties, e.g., Young's modulus, of the material from which the arms 82a are formed etc.
Moreover, the length, width, and height of the beam 82a can be selected so that the beam 82a has a requisite level of stiffness to withstand the levels of shock and vibration to which the switch 10 will be subjected to, without necessitating an inordinately high pull-in voltage. The configuration of the beam 82a should be selected so that the deflection of the beam 82a remains within the elastic region. This characteristic is necessary to help ensure that the beam 82a will return to its un-deflected position when the voltage potential is removed, thereby allowing the contact tab 52 to move to its open position and thereby switch off the associated signal path.
The second actuator 72 is substantially identical to the first actuator 70. The third and fourth actuators 74, 76 are substantially similar to the first actuator 70, with the exception of the shape of the arms 82b of the third and fourth actuators 74, 76. As shown in
The first, second, third, and fourth actuators 70, 72, 74, 76 can have configurations other than those described above in alternative embodiments. For example, suitable comb, plate, or other types of electrostatic actuators can be used in the alternative. Moreover, actuators other than electrostatic actuators, such as thermal, magnetic, and piezoelectric actuators, can also be used in the alternative.
Alternative embodiments of the switch 10 can be configured to electrically connect one electronic device to one, two, or three, or more than four other electronic devices, i.e., alternative embodiments can be configured with one, two, three, or more than four output ports 22, 24, 26, 28, actuators 70, 72, 74, 76, and contact tabs 52. In alternative embodiments which include only one output port 22, i.e., embodiments in which the switch is used to electrically connect only two electronic components, the hub 50 can be eliminated and the switch can be configured so that the contact tab 52 moves into and out of direct physical contact with the electrical conductors 34, 64 of the respective input port 20 and output port 22.
Electrical isolation of the signal path through the switch 10 is achieved by way of the air gaps 42 between the inner conductor 34 of input port 20 and the interior surfaces of the ground housing 30; the air gaps 62 between the inner conductors 64 of output ports 22 and the interior surfaces of the ground housings 60; and the third portion 90 of the arm 82a. The electrical isolation is believed to result in very favorable signal-transmission characteristics for the switch 10. For example, based on finite element method (FEM) simulations, the insertion loss of the switch 10 at 20 GHz is predicted to be approximately 0.12 dB, which is believed to be an improvement of at least approximately 85% over the best in class switches of comparable capabilities. The return loss of the switch 10 at 20 GHz is predicted to be approximately 17.9 dB, which is believed to be an improvement of at least approximately 79% over the best in class switches of comparable capabilities. The isolation of the switch 10 at 20 GHz is predicted to be approximately 46.8 dB, which is believed to be an improvement of at least approximately 17% over the best in class switches of comparable capabilities.
Moreover, because the switch 10 incorporates a relatively large amount of copper in comparison to other types of MEMS switches, which typically are based on thin-film technologies, the switch 10 is believed to have to have substantially higher power-handling capability and linearity, with respect to the transmission of both DC and RF signals, than other types of switches of comparable size. Also, the configuration of the switch 10 makes it capable of being monolithically integrated into systems through the routing of micro-coax lines. Moreover, the switch 10 can be fabricated or transferred onto a suite of various exotic substrates.
The switch 10 and alternative embodiments thereof can be manufactured using known processing techniques for creating three-dimensional microstructures, including coaxial transmission lines. For example, the processing methods described in U.S. Pat. Nos. 7,898,356 and 7,012,489, the disclosure of which is incorporated herein by reference, can be adapted and applied to the manufacture of the switch 10 and alternative embodiments thereof
The switch 10 can be formed in accordance with the following process which is depicted in
Electrically-conductive material can subsequently be deposited on the unmasked or exposed portions of the substrate 12, i.e., on the portions of the substrate 12 not covered by the photoresist material, to a predetermined thickness, to form the first layer of the electrically-conductive material as shown in
The second layer of the electrically conductive material forms portions of the sides of the ground housings 30, 60; and another portion of the bases 80 of the first, second, third, and fourth actuators 70, 72, 74, 76. A second photoresist layer 100 can be applied to the partially-constructed switch 10 by patterning additional photoresist material in the desired shape of the second photoresist layer 100 over the partially-constructed switch 10 and over the first photoresist layer, utilizing a mask or other suitable technique, so that so that the only exposed areas on the partially-constructed switch 10 correspond to the locations at which the above-noted components are to be located, as shown in
The dielectric material that forms the tabs 37 can be deposited and patterned on top of the previously-formed photoresist layer as shown in
The fourth layer of the electrically conductive material forms additional portions of the sides of the ground housings 30, 60, and additional portions of the bases 80 of the first, second, third, and fourth actuators 70, 72, 74, 76. The fourth layer is formed in a manner similar to the first, second, and third layers. In particular, the fourth layer is formed by patterning additional photoresist material to the previously-formed layers, utilizing a mask or other suitable technique, to form a fourth photoresist layer 106, as shown in
The fifth layer of the electrically conductive material forms additional portions of the sides of the ground housings 30, 60, additional portions of the bases 80 of the first, second, third, and fourth actuators 70, 72, 74, 76; the arms 82a, 82b of the first, second, third, and fourth actuators 70, 72, 74, 76; and the contact tabs 52. The dielectric material that forms the third portion 90 of the arm 82a of each of the first, second, third, and fourth actuators 70, 72, 74, 76 can be deposited and patterned on top of the previously-formed photoresist layer as shown in
The photoresist material remaining from each of the masking steps can be removed or released after application of the fifth layer has been completed as depicted in
This application is a divisional application of and claims priority to co-pending non-provisional U.S. patent application Ser. No. 13/623,188 filed on Sep. 20, 2012, which is hereby incorporated by reference in its entirety.
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Number | Date | Country | |
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Number | Date | Country | |
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Parent | 13623188 | Sep 2012 | US |
Child | 14691953 | US |