Claims
- 1. A method for monitoring a contaminant in a semiconductor processing system, comprising the steps of:
sampling a gas flow to detect contaminants present in the gas flow; identifying a target species of the contaminants; selecting a second contaminant having a concentration greater than a concentration of the target species; measuring the second contaminant in the gas flow; and determining the concentration of the target species from measurements of the second contaminant.
- 2. The method for monitoring of claim 1, further comprising measuring the gas flow at a plurality of locations including upstream and downstream of a filter.
- 3. The method for monitoring of claim 2, wherein the plurality of locations comprises a location within the filter.
- 4. The method for monitoring of claim 1, further comprising generating a numerical representation of a chromatogram of the gas flow sampled at a location upstream of the filter.
- 5. The method for monitoring of claim 1, further comprising calculating a time of breakthrough of the target species.
- 6. The method for monitoring of claim 1, wherein the second contaminant has a molecular weight that is lower than that of the target species.
- 7. The method for monitoring of claim 1, wherein the step of sampling includes collecting refractory compounds, high molecular weight compounds and low molecular weight compounds.
- 8. The method for monitoring of claim 1, further comprising a filter including an absorptive material.
- 9. A system for determining and monitoring contamination in a photolithography instrument, comprising:
at least one collection device in fluid communication with a gas flow extending through an optical system of the tool, the collection device having a material analogous to optical elements; a light source providing high energy light to the collection device such that at least one contaminant in the gas flow reacts with the light to create a deposition layer on the material; and at least one photodetector coupled to the collection device to detect the presence of the deposition layer on the material by monitoring one of at least spectral and transmission differences.
- 10. The system of claim 9, wherein the material comprises glass spheres having predetermined surface properties for adsorption of contaminants.
- 11. The system of claim 9, wherein the collection device is tubular.
- 12. The system of claim 9, wherein the material is at least one of glass and coated glass material.
- 13. The system of claim 9, wherein the contamination includes at least one of refractory compounds, high molecular weight compounds and low molecular weight compounds.
- 14. An apparatus for determining contamination in a semiconductor processing system, comprising:
a filter system having a plurality of filter traps disposed therein, the plurality of filter traps collecting contaminants from a gas stream for a duration; and an interface module coupled to the filter system in fluid communication with a gas flow extending through the processing system, the interface module directing a portion of the gas flow into and out of the filter system.
- 15. The apparatus of claim 14, wherein the contaminants include at least one of refractory compounds, high molecular weight compounds and low molecular weight compounds.
- 16. The apparatus of claim 14, further comprising a vacuum source coupled to the filter system to increase a pressure gradient across the filter traps.
- 17. The apparatus of claim 14, wherein the filter traps have a permeable membrane that filter contaminants such as at least one of a refractory compound, a high molecular weight compound and a low molecular weight compound from the gas flow.
- 18. The apparatus of claim 14, wherein the interface module further comprises a pressure regulation device.
- 19. The apparatus of claim 14, wherein the interface module further comprises a controller.
- 20. The apparatus of claim 14, further comprising electronically controlled valves to impose a duty cycle for sampling.
- 21. The apparatus of claim 14, further comprising a timer device to determine a sampling duration.
- 22. The apparatus of claim 14, further comprising a cooling device such as a thermoelectric cooling device.
- 23. The apparatus of claim 14, wherein the filter traps have an absorptive material.
- 24. The apparatus of claim 23, wherein the absorptive material comprises a polymer such as Tenax®.
CROSS REFERENCES TO RELATED APPLICATIONS
[0001] The present application is a continuation-in-part of co-pending U.S. patent application Ser. No. 09/961,802, filed Sep. 24, 2001.
[0002] The entire contents of the above application is incorporated herein by reference in its entirety.
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
09961802 |
Sep 2001 |
US |
Child |
10253401 |
Sep 2002 |
US |