Exposure apparatuses for semiconductor processing are commonly used to transfer images from a reticle onto a semiconductor wafer during semiconductor processing. A typical exposure apparatus includes an illumination source, a reticle stage assembly that positions a reticle, an optical assembly, a wafer stage assembly that positions a semiconductor wafer, a measurement system, and a control system. The features of the images transferred onto the wafer from the reticle are extremely small. Accordingly, the precise positioning of the wafer and the reticle is critical to the manufacturing of high quality wafers.
One type of stage assembly includes a stage base, a stage that retains the wafer or reticle, and one or more movers that move the stage and the wafer or the reticle. One type of mover is a linear motor that includes a pair of spaced apart magnet arrays that are surrounded by a magnetic field and a conductor array positioned between the magnet arrays. An electrical current is directed to the conductor array. The electrical current supplied to the conductor array generates an electromagnetic field that interacts with the magnetic field of the magnet arrays. This generates a force that can cause the conductor array to move relative to the magnet arrays along a first axis. The conductor array can be secured to a stage to move the stage.
Unfortunately, the magnetic field that surrounds the magnetic component is not perfectly symmetric and uniform. As a result thereof, current directed to the conductor component can also generate a side force along a second axis that orthogonal to the first axis. This side force can cause vibration that is transferred to other components of the exposure apparatus and positional error.
The present invention is directed a mover that moves a stage along a first axis. The mover includes a magnetic component, a conductor component, and a sensor. The magnetic component includes one or more magnets that are surrounded by a magnetic field. The conductor component is positioned near the magnetic component. Further, the conductor component interacts with the magnetic component to generate a force when current is directed to the conductor component. In one embodiment, the sensor is used for determining a first axis component of a magnetic flux of the magnetic component and/or for determining a side force that is generated by the mover during operation of the mover. The side force is directed along a second axis that is orthogonal to the first axis. With the information regarding the first axis component of the magnetic flux and/or the side force, the mover and/or other components of the system can be controlled to compensate for or reduce the influence of the side force. As a result thereof, the mover can more accurately position a stage.
In one embodiment, the sensor is secured to and moves with conductor component. For example, the sensor can be embedded into the conductor component. Further, the conductor component can include a plurality of conductors and the sensor can be positioned between two of the conductors. Moreover, the magnetic component can define a magnetic gap, and the conductor component and the sensor can be positioned in the magnetic gap.
In one version, the sensor includes a magneto-resistive element. In another version, the sensor includes a coil that is oriented transverse to the first axis.
In one embodiment, the sensor is used to map out the first axis component of a magnetic flux and/or the side force during relative movement between the conductor component and the magnet component.
Further, the present invention is also directed to a stage assembly, an exposure apparatus, a method for moving a stage, a method for manufacturing an exposure apparatus, and a method for manufacturing an object or a wafer.
The novel features of this invention, as well as the invention itself, both as to its structure and its operation, will be best understood from the accompanying drawings, taken in conjunction with the accompanying description, in which similar reference characters refer to similar parts, and in which:
As an overview, in certain embodiments, one or both of the stage assemblies 18, 20 are uniquely designed to measure and/or map out a first axis component of the magnetic flux and/or side forces created during operation of the stage assemblies 18, 20. With the information regarding the first axis component of the magnetic flux and/or the side force, the stage assemblies 18, 20 and/or other components of the system can be controlled to compensate for or reduce the influence of the side force. As a result thereof, the exposure apparatus 10 can be used to manufacture higher density wafers.
A number of Figures include an orientation system that illustrates an X axis, a Y axis that is orthogonal to the X axis and a Z axis that is orthogonal to the X and Y axes. It should be noted that any of these axes can also be referred to as the first, second, and/or third axes.
The exposure apparatus 10 is particularly useful as a lithographic device that transfers a pattern (not shown) of an integrated circuit from a reticle 26 onto a semiconductor wafer 28. The exposure apparatus 10 mounts to a mounting base 30, e.g., the ground, a base, or floor or some other supporting structure.
There are a number of different types of lithographic devices. For example, the exposure apparatus 10 can be used as a scanning type photolithography system that exposes the pattern from the reticle 26 onto the wafer 28 with the reticle 26 and the wafer 28 moving synchronously. In a scanning type lithographic device, the reticle 26 is moved perpendicularly to an optical axis of the optical assembly 16 by the reticle stage assembly 18 and the wafer 28 is moved perpendicularly to the optical axis of the optical assembly 16 by the wafer stage assembly 20. Scanning of the reticle 26 and the wafer 28 occurs while the reticle 26 and the wafer 28 are moving synchronously.
Alternatively, the exposure apparatus 10 can be a step-and-repeat type photolithography system that exposes the reticle 26 while the reticle 26 and the wafer 28 are stationary. In the step and repeat process, the wafer 28 is in a constant position relative to the reticle 26 and the optical assembly 16 during the exposure of an individual field. Subsequently, between consecutive exposure steps, the wafer 28 is consecutively moved with the wafer stage assembly 20 perpendicularly to the optical axis of the optical assembly 16 so that the next field of the wafer 28 is brought into position relative to the optical assembly 16 and the reticle 26 for exposure. Following this process, the images on the reticle 26 are sequentially exposed onto the fields of the wafer 28, and then the next field of the wafer 28 is brought into position relative to the optical assembly 16 and the reticle 26.
However, the use of the exposure apparatus 10 provided herein is not limited to a photolithography system for semiconductor manufacturing. The exposure, apparatus 10, for example, can be used as an LCD photolithography system that exposes a liquid crystal display device pattern onto a rectangular glass plate or a photolithography system for manufacturing a thin film magnetic head. Further, the present invention can also be applied to a proximity photolithography system that exposes a mask pattern from a mask to a substrate with the mask located close to the substrate without the use of a lens assembly.
The apparatus frame 12 is rigid and supports the components of the exposure apparatus 10. The apparatus frame 12 illustrated in
The illumination system 14 includes an illumination source 32 and an illumination optical assembly 34. The illumination source 32 emits a beam (irradiation) of light energy. The illumination optical assembly 34 guides the beam of light energy from the illumination source 32 to the optical assembly 16. The beam illuminates selectively different portions of the reticle 26 and exposes the wafer 28. In
The illumination source 32 can be a g-line source (436 nm), an i-line source (365 nm), a KrF excimer laser (248 nm), an ArF excimer laser (193 nm) or a F2 laser (157 nm). Alternatively, the illumination source 32 can generate charged particle beams such as an x-ray or an electron beam. For instance, in the case where an electron beam is used, thermionic emission type lanthanum hexaboride (LaB6) or tantalum (Ta) can be used as a cathode for an electron gun. Furthermore, in the case where an electron beam is used, the structure could be such that either a mask is used or a pattern can be directly formed on a substrate without the use of a mask.
The optical assembly 16 projects and/or focuses the light passing through the reticle 26 to the wafer 28. Depending upon the design of the exposure apparatus 10, the optical assembly 16 can magnify or reduce the image illuminated on the reticle 26. The optical assembly 16 need not be limited to a reduction system. It could also be a 1x or magnification system.
When far ultra-violet rays such as the excimer laser is used, glass materials such as quartz and fluorite that transmit far ultra-violet rays can be used in the optical assembly 16. When the F2 type laser or x-ray is used, the optical assembly 16 can be either catadioptric or refractive (a reticle should also preferably be a reflective type), and when an electron beam is used, electron optics can consist of electron lenses and deflectors. The optical path for the electron beams should be in a vacuum.
Also, with an exposure device that employs vacuum ultra-violet radiation (VUV) of wavelength 200 nm or lower, use of the catadioptric type optical system can be considered. Examples of the catadioptric type of optical system include the disclosure Japan Patent Application Disclosure No. 8-171054 published in the Official Gazette for Laid-Open Patent Applications and its counterpart U.S. Pat. No. 5,668,672, as well as Japan Patent Application Disclosure No. 10-20195 and its counterpart U.S. Pat. No. 5,835,275. In these cases, the reflecting optical device can be a catadioptric optical system incorporating a beam splitter and concave mirror. Japan Patent Application Disclosure No. 8-334695 published in the Official Gazette for Laid-Open Patent Applications and its counterpart U.S. Pat. No. 5,689,377 as well as Japan Patent Application Disclosure No. 10-3039 and its counterpart U.S. patent application Ser. No. 873,605 (Application Date: Jun. 12, 1997) also use a reflecting-refracting type of optical system incorporating a concave mirror, etc., but without a beam splitter, and can also be employed with this invention. As far as is permitted, the disclosures in the above-mentioned U.S. patents, as well as the Japan patent applications published in the Official Gazette for Laid-Open Patent Applications are incorporated herein by reference.
The reticle stage assembly 18 holds and positions the reticle 26 relative to the optical assembly 16 and the wafer 28. Somewhat similarly, the wafer stage assembly 20 holds and positions the wafer 28 with respect to the projected image of the illuminated portions of the reticle 26.
Further, in photolithography systems, when linear motors (see U.S. Pat. Nos. 5,623,853 or 5,528,118) are used in a wafer stage or a mask stage, the linear motors can be either an air levitation type employing air bearings or a magnetic levitation type using Lorentz force or reactance force. Additionally, the stage could move along a guide, or it could be a guideless type stage that uses no guide. As far as is permitted, the disclosures in U.S. Pat. Nos. 5,623,853 and 5,528,118 are incorporated herein by reference.
Alternatively, one of the stages could be driven by a planar motor, which drives the stage by an electromagnetic force generated by a magnet unit having two-dimensionally arranged magnets and an armature coil unit having two-dimensionally arranged coils in facing positions. With this type of driving system, either the magnet unit or the armature coil unit is connected to the stage and the other unit is mounted on the moving plane side of the stage.
Movement of the stages as described above generates reaction forces that can affect performance of the photolithography system. Reaction forces generated by the wafer (substrate) stage motion can be mechanically transferred to the floor (ground) by use of a frame member as described in U.S. Pat. No. 5,528,100 and published Japanese Patent Application Disclosure No. 8-136475. Additionally, reaction forces generated by the reticle (mask) stage motion can be mechanically transferred to the floor (ground) by use of a frame member as described in U.S. Pat. No. 5,874,820 and published Japanese Patent Application Disclosure No. 8-330224 As far as is permitted, the disclosures in U.S. Pat. Nos. 5,528,100 and 5,874,820 and Japanese Patent Application Disclosure No. 8-330224 are incorporated herein by reference.
The measurement system 22 monitors movement of the reticle 26 and the wafer 28 relative to the optical assembly 16 or some other reference. With this information, the control system 24 can control the reticle stage assembly 18 to precisely position the reticle 26 and the wafer stage assembly 20 to precisely position the wafer 28. For example, the measurement system 22 can utilize multiple laser interferometers, encoders, and/or other measuring devices.
The control system 24 is connected to the reticle stage assembly 18, the wafer stage assembly 20, and the measurement system 22. The control system 24 receives information from the measurement system 22 and controls the stage mover assemblies 18, 20 to precisely position the reticle 26 and the wafer 28. The control system 24 can include one or more processors and circuits.
A photolithography system (an exposure apparatus) according to the embodiments described herein can be built by assembling various subsystems, including each element listed in the appended claims, in such a manner that prescribed mechanical accuracy, electrical accuracy, and optical accuracy are maintained. In order to maintain the various accuracies, prior to and following assembly, every optical system is adjusted to achieve its optical accuracy. Similarly, every mechanical system and every electrical system are adjusted to achieve their respective mechanical and electrical accuracies. The process of assembling each subsystem into a photolithography system includes mechanical interfaces, electrical circuit wiring connections and air pressure plumbing connections between each subsystem. Needless to say, there is also a process where each subsystem is assembled prior to assembling a photolithography system from the various subsystems. Once a photolithography system is assembled using the various subsystems, a total adjustment is performed to make sure that accuracy is maintained in the complete photolithography system. Additionally, it is desirable to manufacture an exposure system in a clean room where the temperature and cleanliness are controlled.
In this embodiment, the stage assembly 220 includes a stage base 236, a stage 238, and a stage mover assembly 242. The size, shape, and design of each these components can be varied. The control system 224 precisely controls the stage mover assembly 242 to precisely position the work piece 200.
In
The stage 238 retains the work piece 200. In one embodiment, the stage 238 is generally rectangular shaped and includes a chuck (not shown) for holding the work piece 200.
The stage mover assembly 242 moves and positions the stage 238. In
The design of each mover 244, 246 can be varied to suit the movement requirements of the stage mover assembly 242. In
In
The connector bar 248 supports the stage 238 and is moved by the movers 244, 246. In
The mover frame 352 supports some of the components of the mover 344. In one embodiment, the mover frame 352 is generally rigid and shaped somewhat similar to a sideways “U”. The mover frame 352 can be secured to the stage base 236 (illustrated in
The magnetic component 354 is surrounded by a magnetic field. In
Each of the magnet arrays 354A, 354B includes one or more magnets 354D. The design, the positioning, and the number of magnets 354D in each magnet array 354A, 354B can be varied to suit the design requirements of the mover 344. In
In
Each of the magnets 354D can be made of a high energy product, rare earth, permanent magnetic material such as NdFeB. Alternately, for example, each magnet 354D can be made of a low energy product, ceramic or other type of material that is surrounded by a magnetic field.
A portion of the magnetic fields that surround the magnets 354D are illustrated in
With this design, current that is directed to the conductor component 356 generates a magnetic field that interacts with the magnetic fields that surround the magnet component 354 to generate (i) a driving force 363 (illustrated as a two headed arrow) along the Y axis that can move the conductor component 356 along the movement axis 361, and (ii) a side force 365 (illustrated as a two headed arrow) along the Z axis that acts on the conductor component 356 substantially transversely to the movement axis 361. The side force 365 can be separated into an upper side force 365A that results from a portion of the conductor component 356 being positioned in the upper, first magnetic flux 360A, and a lower side force 365B that results from a portion of the conductor component 356 being positioned in the lower, first magnetic flux 360B. In
It should be noted that with the conductor component 356 illustrated in
The conductor component 356 is positioned near and interacts with the magnet component 354, and is positioned and moves within the magnetic gap 354C. In
In
The control system 224 (illustrated in
When electric currents flow in the coils 364A, 364B, 364C, Lorentz type forces are generated in a direction mutually perpendicular to the direction of the wires of the coils 364A, 364B, 364C and the magnetic fields in the magnetic gap 354C. If the current magnitudes and polarities are adjusted properly to the alternating polarity of the magnet fields in the magnetic gap 354C, the controllable driving force 363 is generated. Additionally, because of the first axis component of the magnetic flux 360 in the magnetic gap 354C, a side force 365 along the Z axis is also generated.
Additionally, the mover 344 can include a sensor 366 that is used to determine the first axis component of a magnetic flux 360 of the magnetic component 354 during operation of the mover 344. Further, with this information from the sensor 366, the magnitude of the side force 365 that is being imparted on the conductor component 356 can be calculated. For example, the sensor 366 can be used to map out the first axis component of a magnetic flux 360 and/or the side force 365 of the mover 344 as the conductor component 356 is moved relative to the magnetic component 354. With the information regarding the first axis component of the magnetic flux 360 and/or the side force 365, the mover 344 and/or other components of the exposure apparatus 10 can be controlled to compensate for or reduce the influence of the side force 365.
The location and design of the sensor 366 can vary pursuant to the teachings provided herein. In one embodiment, the sensor 366 is positioned near the magnetic component 354 in the magnetic gap 354C, and the sensor 366 is secured to and moves with conductor component 356. Further, the sensor 366 can be embedded into the conductor component 356 between the coils 364.
In one embodiment, the sensor 366 is at magnetic flux sensor such as a magneto-resistive element that uses, for example, the Giant Magneto-Resistive effect to measure the first axis component of the magnetic flux 360 in the magnetic gap 354C. The magneto-resistive element can be somewhat similar to those used in a read-write head of a disk drive. With this type of sensor 366, the electrical resistance varies with the applied magnetic field.
During operation of the mover 344, information from the sensor 366 can be transferred to the control system 224. With this design, the sensor 366 can be used to map out the first axis component of the magnetic flux 360 along the movement axis 361. Further, with this information, the side force 365 can be determined along the movement axis 361.
However, in the embodiment, the conductor component 556 is different than the conductor component 356 described above. More specifically, in this embodiment, the conductor component 556 includes a split coil 564 design in which each of the first coils 564A (illustrated with “X”) are split, each of the second coils 564B (illustrated with “/”) are split, and each of the third coils 564C (illustrated with “//”) are split. Stated in another fashion, in
With this design, the control system 224 (illustrated in
Further, in certain embodiments, with information regarding the upper and lower first magnetic flux 560A, 560B, current can be directed and controlled to the sets 580, 582, 584, 586, 588, 590, to reduce or eliminate the net side force 565.
Additionally, in this embodiment, the mover 944 can include one or more sensors 966 (only two are illustrated in
Additionally, in this embodiment, the mover 1044 can include one or more sensors 1066 (only two are illustrated in
Semiconductor devices can be fabricated using the above described systems, by the process shown generally in
At each stage of wafer processing, when the above-mentioned preprocessing steps have been completed, the following post-processing steps are implemented. During post-processing, first, in step 1115 (photoresist formation step), photoresist is applied to a wafer. Next, in step 1116 (exposure step), the above-mentioned exposure device is used to transfer the circuit pattern of a mask (reticle) to a wafer. Then in step 1117 (developing step), the exposed wafer is developed, and in step 1118 (etching step), parts other than residual photoresist (exposed material surface) are removed by etching. In step 1119 (photoresist removal step), unnecessary photoresist remaining after etching is removed. Multiple circuit patterns are formed by repetition of these preprocessing and post-processing steps.
While the particular mover as herein shown and disclosed in detail is fully capable of obtaining the objects and providing the advantages herein before stated, it is to be understood that it is merely illustrative of the presently preferred embodiments of the invention and that no limitations are intended to the details of construction or design herein shown other than as described in the appended claims.
This application claims priority on U.S. Provisional Application Ser. No. 60/930,293, filed May 15, 2007 and entitled “System and Method, for Measuring and Mapping a Sideforce for a Mover”. As far as permitted, the contents of U.S. Provisional Application Ser. No. 60/930,293 are incorporated herein by reference.
Number | Date | Country | |
---|---|---|---|
60930293 | May 2007 | US |