System and method for read synchronization of memory modules

Information

  • Patent Grant
  • 8880833
  • Patent Number
    8,880,833
  • Date Filed
    Monday, March 4, 2013
    11 years ago
  • Date Issued
    Tuesday, November 4, 2014
    9 years ago
Abstract
A memory module includes several memory devices coupled to a memory hub. The memory hub includes several link interfaces coupled to respective processors, several memory controller coupled to respective memory devices, a cross-bar switch coupling any of the link interfaces to any of the memory controllers, a write buffer and read cache for each memory device and a read synchronization module. The read synchronization module includes a write pointer, a read pointer and a buffer. The write pointer is incremented in response to the receipt of read data. The read pointer increments in response to coupling of the read data from the memory hub. A comparator compares the read pointer an the write pointer, and the comparison is used to adjust the memory timing.
Description
TECHNICAL FIELD

The present invention relates to a processor-based system, and more particularly, to a processor-based system having a memory module with a memory hub coupling several memory devices to a processor or other memory access devices.


BACKGROUND OF THE INVENTION

Processor-based systems, such as computer systems, use memory devices, such as dynamic random access memory (“DRAM”) devices, to store instructions and data that are accessed by a processor. These memory devices are typically used as system memory in a computer system. In a typical computer system, the processor communicates with the system memory through a processor bus and a memory controller. The processor issues a memory request, which includes a memory command, such as a read command, and an address designating the location from which data or instructions are to be read. The memory controller uses the command and address to generate appropriate command signals as well as row and column addresses, which are applied to the system memory. In response to the commands and addresses, data is transferred between the system memory and the processor. The memory controller is often part of a system controller, which also includes bus bridge circuitry for coupling the processor bus to an expansion bus, such as a PCI bus.


Although the operating speed of memory devices has continuously increased, this increase in operating speed has not kept pace with increases in the operating speed of processors. Even slower has been the increase in operating speed of memory controllers coupling processors to memory devices. The relatively slow speed of memory controllers and memory devices limits the data bandwidth between the processor and the memory devices.


In addition to the limited bandwidth between processors and memory devices, the performance of computer systems is also limited by latency problems that increase the time required to read data from system memory devices. More specifically, when a memory device read command is coupled to a system memory device, such as a synchronous DRAM (“SDRAM”) device, the read data are output from the SDRAM device only after a delay of several clock periods. Therefore, although SDRAM devices can synchronously output burst data at a high data rate, the delay in initially providing the data can significantly slow the operating speed of a computer system using such SDRAM devices.


One approach to alleviating the memory latency problem is to use multiple memory devices coupled to the processor through a memory hub. In a memory hub architecture, a system controller or memory hub controller is coupled to several memory modules, each of which includes a memory hub coupled to several memory devices. The memory hub efficiently routes memory requests and responses between the controller and the memory devices. Computer systems employing this architecture can have a higher bandwidth because a processor can access one memory module while another memory module is responding to a prior memory access. For example, the processor can output write data to one of the memory modules in the system while another memory module in the system is preparing to provide read data to the processor. The operating efficiency of computer systems using a memory hub architecture can make it more practical to vastly increase data bandwidth of a memory system. A memory hub architecture can also provide greatly increased memory capacity in computer systems.


Although there are advantages to utilizing a memory hub for accessing memory devices, the design of the hub memory system, and more generally, computer systems including such a memory hub architecture, becomes increasingly difficult. For example, in many hub based memory systems, the processor is coupled through a memory hub controller to each of several memory hubs via a high speed bus or link over which signals, such as command, address, or data signals, are transferred at a very high rate. The memory hubs are, in turn, coupled to several memory devices via buses that must also operate at a very high speed. However, as transfer rates increase, the time for which a signal represents valid information is decreasing. As commonly referenced by those ordinarily skilled in the art, the window or “eye” for when the signals are valid decreases at higher transfer rates. With specific reference to data signals, the “data eye” decreases. As understood by one skilled in the art, the data eye for each of the data signals defines the actual duration that each signal is valid after various factors affecting the signal are considered, such as timing skew, voltage and current drive capability, and the like. In the case of timing skew of signals, it often arises from a variety of timing errors such as loading on the lines of the bus and the physical lengths of such lines.


As data eyes of signals decrease at higher transfer rates, it is possible that one or more of a groups of signals provided by a memory device in parallel will have different arrival times at a memory hub to which the memory devices are coupled. As a result, not all of the signals will be simultaneously valid at the memory hub, thus preventing the memory hub from successfully capturing the signals. For example, where a plurality of signals are provided in parallel over a bus, the data eye of one or more of the particular signals do not overlap with the data eyes of the other signals. In this situation, the signals having non-overlapping data eyes are not valid at the same time as the rest of the signals, and consequently, cannot be successfully captured by the memory hub. Clearly, as those ordinarily skilled in the art will recognize, the previously described situation is unacceptable.


One approach to alleviating timing problems in memory devices is to use a delay-locked loop (DLL) or delay line (DL) to lock or align the receipt of read data from a memory device to a capture strobe signal used to latch the read data in a memory hub. More specifically, a read strobe signal is output by the memory devices along with read data signals. At higher transfer rates, the timing of the read strobe signal can vary so that it cannot be reliably used to capture the read data signals in the memory hub. Further, even if the read data strobe could reliably capture the read data signals in the memory hub, the time at which the read data signals were captured could vary in relation to a core clock domain used to control the operation of the memory hub that is coupled to the memory device. In such case, the read data may not be present in the memory hub at the proper time. To alleviate this problem, the timing of the read data strobe signals is adjusted using the DLL or DL to generate a capture clock signal that can reliably capture the read data signals. The DLL or DL is thus effective in preventing substantial drifting of a read data eye in relation to the core clock domain. As transfer rates increase, however, the timing specifications for the DLL or DL become more stringent and therefore increasingly difficult to meet. Furthermore, the amount of circuitry required to implement a suitable DLL or DL can materially reduce the amount of space that could otherwise be used for memory device circuitry, thereby either increasing the cost or reducing the storage capacity of such memory devices.


There is accordingly a need for a system and method that avoids the need to precisely control the timing relationships between a memory hub clock domain and the receipt of read data signals at the memory hub in a manner that avoids the need for extensive DLL or DL circuitry.





BRIEF DESCRIPTION OF THE DRAWINGS


FIG. 1 is a block diagram of a computer system according to one example of the invention in which a memory hub is included in each of a plurality of memory modules.



FIG. 2 is a block diagram of a memory hub used in the computer system of FIG. 1, which contains read synchronization modules according to one example of the invention.



FIG. 3 is a block diagram of one embodiment of a synchronization system according to one example of the invention.





DETAILED DESCRIPTION OF THE INVENTION

Embodiments of the present invention are directed to a memory hub module having the capability to perform a read channel synchronization. Certain details are set forth below to provide a sufficient understanding of various embodiments of the invention. However, it will be clear to one skilled in the art that the invention may be practiced without these particular details. In other instances, well-known circuits, control signals, and timing protocols have not been shown in detail in order to avoid unnecessarily obscuring the invention.


A computer system 100 according to one example of the invention is shown in FIG. 1. The computer system 100 includes a processor 104 for performing various computing functions, such as executing specific software to perform specific calculations or tasks. The processor 104 includes a processor bus 106 that normally includes an address bus, a control bus, and a data bus. The processor bus 106 is typically coupled to cache memory 108, which, as previously mentioned, is usually static random access memory (“SRAM”). Finally, the processor bus 106 is coupled to a system controller 110, which is also sometimes referred to as a “North Bridge” or “memory controller.”


The system controller 110 serves as a communications path to the processor 104 for a variety of other components. More specifically, the system controller 110 includes a graphics port that is typically coupled to a graphics controller 112, which is, in turn, coupled to a video terminal 114. The system controller 110 is also coupled to one or more input devices 118, such as a keyboard or a mouse, to allow an operator to interface with the computer system 100. Typically, the computer system 100 also includes one or more output devices 120, such as a printer, coupled to the processor 104 through the system controller 110. One or more data storage devices 124 are also typically coupled to the processor 104 through the system controller 110 to allow the processor 104 to store data or retrieve data from internal or external storage media (not shown). Examples of typical storage devices 124 include hard and floppy disks, tape cassettes, and compact disk read-only memories (CD-ROMs).


The system controller 110 is coupled to several memory modules 130a, b . . . n, which serve as system memory for the computer system 100. The memory modules 130 are preferably coupled to the system controller 110 through respective high-speed links 134a and 134b, which may be optical or electrical communication paths or some other type of communications paths. The high speed link 134a is the downlink, carrying memory requests from the memory hub controller 132 to the memory modules 130a-n. The high speed link 134b is the uplink, carrying memory responses from the memory modules 130a-n to the memory hub controller 132. In the event the high-speed links 134a and 134b are implemented as optical communication paths, the optical communication paths may be in the form of one or more optical fibers, for example. In such case, the system controller 110 and the memory modules will include an optical input/output port or separate input and output ports coupled to the optical communication paths. The memory modules 130 are shown coupled to the system controller 110 in a multi-drop arrangement in which the high-speed links 134a and 134b are coupled to all of the memory modules 130. However, it will be understood that other topologies may also be used, such as a point-to-point coupling arrangement in which a separate high-speed link (not shown) is used to couple each of the memory modules 130 to the system controller 110. A switching topology may also be used in which the system controller 110 is selectively coupled to each of the memory modules 130 through a switch (not shown). Other topologies that may be used will be apparent to one skilled in the art.


Each of the memory modules 130 includes a memory hub 140 for controlling access to 32 memory devices 148, which, in the example illustrated in FIG. 1, are synchronous dynamic random access memory (“SDRAM”) devices. However, a fewer or greater number of memory devices 148 may be used, and memory devices other than SDRAM devices may, of course, also be used. In the example illustrated in FIG. 1, the memory hubs 140 communicate over 4 independent memory channels 149 over the high-speed links 134a and 134b. In this example, although not shown in FIG. 1, 4 memory hub controllers 128 are provided, each to receive data from one memory channel 149. A fewer or greater number of memory channels 149 may be used, however, in other examples. The memory hub 140 is coupled to each of the system memory devices 148 through a bus system 150, which normally includes a control bus, an address bus and a data bus.


A memory hub 200 according to an embodiment of the present invention is shown in FIG. 2. The memory hub 200 can be substituted for the memory hub 140 of FIG. 1. The memory hub 200 is shown in FIG. 2 as being coupled to four memory devices 240a-d, which, in the present example are conventional SDRAM devices. In an alternative embodiment, the memory hub 200 is coupled to four different banks of memory devices, rather than merely four different memory devices 240a-d, with each bank typically having a plurality of memory devices. However, for the purpose of providing an example, the present description will be with reference to the memory hub 200 coupled to the four memory devices 240a-d. It will be appreciated that the necessary modifications to the memory hub 200 to accommodate multiple banks of memory is within the knowledge of those ordinarily skilled in the art.


Further included in the memory hub 200 are link interfaces 210a-d and 212a-d for coupling the memory module on which the memory hub 200 is located to a first high speed data link 220 and a second high speed data link 222, respectively. As previously discussed with respect to FIG. 1, the high-speed data links 220, 222 can be implemented using an optical or electrical communication path or some other type of communication path. The link interfaces 210a-d, 212a-d are conventional, and include circuitry used for transferring data, command, and address information to and from the high speed data links 220, 222. As well known, such circuitry includes transmitter and receiver logic known in the art. It will be appreciated that those ordinarily skilled in the art have sufficient understanding to modify the link interfaces 210a-d, 212a-d to be used with specific types of communication paths, and that such modifications to the link interfaces 210a-d, 212a-d can be made without departing from the scope of the present invention. For example, in the event the high-speed data link 220, 222 is implemented using an optical communications path, the link interfaces 210a-d, 212a-d will include an optical input/output port that can convert optical signals coupled through the optical communications path into electrical signals.


The link interfaces 210a-d, 212a-d are coupled to a switch 260 through a plurality of bus and signal lines, represented by busses 214. The busses 214 are conventional, and include a write data bus and a read data bus, although a single bi-directional data bus may alternatively be provided to couple data in both directions through the link interfaces 210a-d, 212a-d. It will be appreciated by those ordinarily skilled in the art that the busses 214 are provided by way of example, and that the busses 214 may include fewer or greater signal lines, such as further including a request line and a snoop line, which can be used for maintaining cache coherency.


The link interfaces 210a-d, 212a-d include circuitry that allow the memory hub 200 to be connected in the system memory in a variety of configurations. For example, the multi-drop arrangement, as shown in FIG. 1, can be implemented by coupling each memory module to the memory hub controller 128 through either the link interfaces 210a-d or 212a-d. Alternatively, a point-to-point, or daisy chain configuration can be implemented by coupling the memory modules in series. For example, the link interfaces 210a-d can be used to couple a first memory module and the link interfaces 212a-d can be used to couple a second memory module. The memory module coupled to a processor, or system controller, will be coupled thereto through one set of the link interfaces and further coupled to another memory module through the other set of link interfaces. In one embodiment of the present invention, the memory hub 200 of a memory module is coupled to the processor in a point-to-point arrangement in which there are no other devices coupled to the connection between the processor 104 and the memory hub 200. This type of interconnection provides better signal coupling between the processor 104 and the memory hub 200 for several reasons, including relatively low capacitance, relatively few line discontinuities to reflect signals and relatively short signal paths.


The switch 260 is further coupled to four memory interfaces 270a-d which are, in turn, coupled to the system memory devices 240a-d, respectively. By providing a separate and independent memory interface 270a-d for each system memory device 240a-d, respectively, the memory hub 200 avoids bus or memory bank conflicts that typically occur with single channel memory architectures. The switch 260 is coupled to each memory interface through a plurality of bus and signal lines, represented by busses 274. The busses 274 include a write data bus, a read data bus, and a request line. However, it will be understood that a single bi-directional data bus may alternatively be used instead of a separate write data bus and read data bus. Moreover, the busses 274 can include a greater or lesser number of signal lines than those previously described.


In an embodiment of the present invention, each memory interface 270a-d is specially adapted to the system memory devices 240a-d to which it is coupled. More specifically, each memory interface 270a-d is specially adapted to provide and receive the specific signals received and generated, respectively, by the system memory device 240a-d to which it is coupled. Also, the memory interfaces 270a-d are capable of operating with system memory devices 240a-d operating at different clock frequencies. As a result, the memory interfaces 270a-d isolate the processor 104 from changes that may occur at the interface between the memory hub 230 and memory devices 240a-d coupled to the memory hub 200, and it provides a more controlled environment to which the memory devices 240a-d may interface.


The switch 260 coupling the link interfaces 210a-d, 212a-d and the memory interfaces 270a-d can be any of a variety of conventional or hereinafter developed switches. For example, the switch 260 may be a cross-bar switch that can simultaneously couple link interfaces 210a-d, 212a-d and the memory interfaces 270a-d to each other in a variety of arrangements. The switch 260 can also be a set of multiplexers that do not provide the same level of connectivity as a cross-bar switch but nevertheless can couple the some or all of the link interfaces 210a-d, 212a-d to each of the memory interfaces 270a-d. The switch 260 may also includes arbitration logic (not shown) to determine which memory accesses should receive priority over other memory accesses. Bus arbitration performing this function is well known to one skilled in the art.


With further reference to FIG. 2, each of the memory interfaces 270a-d includes a respective memory controller 280, a respective write buffer 282, and a respective cache memory unit 284. The memory controller 280 performs the same functions as a conventional memory controller by providing control, address and data signals to the system memory device 240a-d to which it is coupled and receiving data signals from the system memory device 240a-d to which it is coupled. The write buffer 282 and the cache memory unit 284 include the normal components of a buffer and cache memory, including a tag memory, a data memory, a comparator, and the like, as is well known in the art. The memory devices used in the write buffer 282 and the cache memory unit 284 may be either DRAM devices, static random access memory (“SRAM”) devices, other types of memory devices, or a combination of all three. Furthermore, any or all of these memory devices as well as the other components used in the cache memory unit 284 may be either embedded or stand-alone devices.


The write buffer 282 in each memory interface 270a-d is used to store write requests while a read request is being serviced. In such a system, the processor 104 can issue a write request to a system memory device 240a-d even if the memory device to which the write request is directed is busy servicing a prior write or read request. Using this approach, memory requests can be serviced out of order since an earlier write request can be stored in the write buffer 282 while a subsequent read request is being serviced. The ability to buffer write requests to allow a read request to be serviced can greatly reduce memory read latency since read requests can be given first priority regardless of their chronological order. For example, a series of write requests interspersed with read requests can be stored in the write buffer 282 to allow the read requests to be serviced in a pipelined manner followed by servicing the stored write requests in a pipelined manner. As a result, lengthy settling times between coupling write request to the memory devices 270a-d and subsequently coupling read request to the memory devices 270a-d for alternating write and read requests can be avoided.


The use of the cache memory unit 284 in each memory interface 270a-d allows the processor 104 to receive data responsive to a read command directed to a respective system memory device 240a-d without waiting for the memory device 240a-d to provide such data in the event that the data was recently read from or written to that memory device 240a-d. The cache memory unit 284 thus reduces the read latency of the system memory devices 240a-d to maximize the memory bandwidth of the computer system. Similarly, the processor 104 can store write data in the cache memory unit 284 and then perform other functions while the memory controller 280 in the same memory interface 270a-d transfers the write data from the cache memory unit 284 to the system memory device 240a-d to which it is coupled.


Further included in the memory hub 200 is a built in self-test (BIST) and diagnostic engine 290 coupled to the switch 260 through a diagnostic bus 292. The diagnostic engine 290 is further coupled to a maintenance bus 296, such as a System Management Bus (SMBus) or a maintenance bus according to the Joint Test Action Group (JTAG) and IEEE 1149.1 standards. Both the SMBus and JTAG standards are well known by those ordinarily skilled in the art. Generally, the maintenance bus 296 provides a user access to the diagnostic engine 290 in order to perform memory channel and link diagnostics. For example, the user can couple a separate PC host via the maintenance bus 296 to conduct diagnostic testing or monitor memory system operation. By using the maintenance bus 296 to access diagnostic test results, issues related to the use of test probes, as previously discussed, can be avoided. It will be appreciated that the maintenance bus 296 can be modified from conventional bus standards without departing from the scope of the present invention. It will be further appreciated that the diagnostic engine 290 should accommodate the standards of the maintenance bus 296, where such a standard maintenance bus is employed. For example, the diagnostic engine should have an maintenance bus interface compliant with the JTAG bus standard where such a maintenance bus is used.


Further included in the memory hub 200 is a DMA engine 286 coupled to the switch 260 through a bus 288. The DMA engine 286 enables the memory hub 200 to move blocks of data from one location in the system memory to another location in the system memory without intervention from the processor 104. The bus 288 includes a plurality of conventional bus lines and signal lines, such as address, control, data busses, and the like, for handling data transfers in the system memory. Conventional DMA operations well known by those ordinarily skilled in the art can be implemented by the DMA engine 286. The DMA engine 286 is able to read a link list in the system memory to execute the DMA memory operations without processor intervention, thus, freeing the processor 104 and the bandwidth limited system bus from executing the memory operations. The DMA engine 286 can also include circuitry to accommodate DMA operations on multiple channels, for example, for each of the system memory devices 240a-d. Such multiple channel DMA engines are well known in the art and can be implemented using conventional technologies.


The diagnostic engine 290 and the DMA engine 286 are preferably embedded circuits in the memory hub 200. However, including separate a diagnostic engine and a separate DMA device coupled to the memory hub 200 is also within the scope of the present invention.


Embodiments of the present invention provide a read synchronization module 297 for controlling the timing of read requests sent to the memory devices 240 so that read data signals are received at the memory hub 200 at the proper time in relation to a system clock signal used to establish a clock domain for the memory hub 200. Although a single synchronization module 297 is shown in FIG. 2, it is to be understood that a plurality of synchronization modules 297 may also be used, for example, one per memory controller 280. Further, in the embodiment shown in FIG. 2, the synchronization module 297 is shown in communication with the memory device 240c and the memory controller 280c. In some embodiments, the synchronization module 297 may be in communication with one or more memory devices and the controller 100 or memory hub 140 shown in FIG. 1. As mentioned above, the memory synchronization module 297 functions to synchronize the coupling of read data from the memory device with the core clock domain of the memory hub 200 as established by a system clock signal from the memory hub controller 128. Accordingly, if data is sent by the memory devices 148 either too early or too late, the read data might be coupled to the memory hub 200 at a time that is not synchronized to the core clock domain of the memory hub 200. Significantly, the synchronization module 297 allows the timing of a strobe signal used to capture read data signals to drift as needed so that the read data signals are captured at the proper time in relation to the core clock domain.



FIG. 3 illustrates a read synchronization module 300 according to an embodiment of the present invention that can be used as the read synchronization module 297 shown in FIG. 2. It will be appreciated that FIG. 3 is a functional block diagram representative of a suitable synchronization module and is not intended to limit the scope of the present invention. The functional blocks shown in FIG. 3 are conventional, and can be implemented using well known techniques and circuitry. It will be further appreciated that control signals and other functional blocks have been omitted from FIG. 3 in order to avoid unnecessarily obscuring the present invention, and that the description provided herein is sufficient to enable those ordinarily skilled in the art to practice the invention.


Included in the read synchronization module 300 is a memory sequencer 304 that generates properly timed signals for controlling the operation of the memory devices 148 (FIG. 1) or 240 (FIG. 2). However, in alternative embodiments, the DMA engine 286 may be used for this purpose. The nature of the signals generated by the memory sequencer 304 will, of course, be determined by the nature of the signals used by the memory devices 148, 240. The timing of the signals controlling the operation of the memory devices 148, 240 control the time when read data signals are output from the memory devices 148, 240.


A buffer 308 is used to store read data received from one or more of the memory devices 148, 240. The buffer 308 in FIG. 3 is a first-in first-out (FIFO) buffer, such as a circular buffer, and may be implemented as known in the art. The buffer 308 is clocked with a read strobe signal, which may also be referred to as a read clock signal. The read strobe signal is generated by the memory devices 148, 240 and is output from the memory devices 148, 240 along with read data signals. When the read data is clocked into the buffer 308 by the read strobe signal, i.e., the read data are written to the buffer 308, a write pointer, 312 is incremented. The read data are clocked out of the buffer 308 and coupled to the memory hub controller 132 (FIG. 1) by a core clock signal, which may be derived from a system clock signal. When data is clocked out of the buffer 308 by the core clock, i.e., the read data are read from the buffer 308, a read pointer 314 is incremented. The read pointer 314 and the write pointer 312 are then compared by a comparator 316. Comparator 316 generates an adjust signal in response to the comparison. Generally, the relationship between the read pointer 314 and the write pointer 312 identifies the crossing margin from the memory device timing domain represented by the read strobe signal to the core clock timing domain—the “data eye”, as described above.


The adjust signal is fed back to the memory sequencer 304. The data eye will decrease; i.e., the read pointer 314 will be too close to the write pointer 312, if the read data are being coupled from the memory devices 148, 240 too early in relation to the core clock coupling the read data to the memory hub controller 128. In such case, the memory sequencer 304 reduces the rate at which read data are coupled from the memory devices 148. Conversely, the data eye will increase, i.e., the read pointer 314 will be too far away from the write pointer 312, if the read data are being coupled from the memory devices 148 too late in relation to the core clock coupling the read data to the memory hub controller 128. In such case, the memory sequencer 304 increases the rate at which read data are coupled from the memory devices 148. As a result, the read data are coupled from the memory devices 148 at a rate that is adjusted to match the timing of the core clock signal.


From the foregoing it will be appreciated that, although specific embodiments of the invention have been described herein for purposes of illustration, various modifications may be made without deviating from the spirit and scope of the invention. Accordingly, the invention is not limited except as by the appended claims.

Claims
  • 1. An apparatus, comprising: a storage circuit configured to receive read data based, at least in part, on a first clock signal, and to provide the read data based, at least in part, on a second clock signal; anda comparison component coupled to the storage circuit and configured to compare a first time in which the read data is received by the storage circuit with a second time in which the read data is provided from the storage circuit, the comparison component further configured to provide an adjust signal based, at least in part, on the comparison, the adjust signal indicative of a timing at which subsequent read data are provided to the storage circuit.
  • 2. The apparatus of claim 1, further comprising: a memory sequencer configured to receive the adjust signal and adjust the rate of the timing at which subsequent read data provided to the storage circuit based, at least in part, on the adjust signal.
  • 3. The apparatus of claim 1, wherein the comparison component comprises: a first counter configured to increment responsive, at least in part, to the storage circuit receiving the read data;a second counter operable to increment responsive, at least in part, to the storage circuit providing the read data; anda comparator configured to compare a count of the first counter and a count of the second counter to generate the adjust signal.
  • 4. The apparatus of claim 1, wherein the storage circuit comprises a first-in first-out (FIFO) buffer.
  • 5. The apparatus of claim 1, wherein the comparison component further configured to provide an adjust signal based, at least in part, on the comparison comprises: the comparison component further configured to compare a read pointer and a write pointer.
  • 6. The apparatus of claim 1, wherein the adjust signal is indicative of a crossing margin between a first time domain and a second time domain.
  • 7. An apparatus, comprising: a storage circuit configured receive a read data signal in accordance with a first signal and further configured to provide the read data signal in accordance with a second signal;a write pointer configured to increment responsive, at least in part, to the first signal;a read pointer configured to increment responsive, at least in part, to the second signal; anda comparator configured to compare the write pointer and the read pointer to generate an adjust signal based, at least in part, on the comparison.
  • 8. The apparatus of claim 7, wherein the first signal comprises a read clock signal and the second signal comprises a core clock signal.
  • 9. The apparatus of claim 7, further comprising: a signal generator coupled to the comparator and configured to receive the adjust signal, the signal generator further configured to generate one or more control signals to adjust the time at which read data is provided to the storage circuit based, at least in part, on the adjust signal.
  • 10. The apparatus of claim 9, wherein the signal generator further configured to generate one or more control signals to adjust the time at which read data is provided to the storage circuit based, at least in part, on the adjust signal comprises: the signal generator further configured to generate one or more control signals to adjust the time between a request being received at a first interface and the request being provided to a second interface.
  • 11. The apparatus of claim 9, wherein the signal generator further configured to generate one or more control signals to adjust the time at which read data is provided to the storage circuit based, at least in part, on the adjust signal comprises: the signal generator further configured to reduce the rate at which read data is provided to the storage circuit responsive to the read data being provided to the storage circuit too early and further configured to increase the rate at which read data are provided to the storage circuit responsive to the read data being provided to the storage circuit too late.
  • 12. The apparatus of claim of claim 9, wherein the signal generator comprises a direct memory access (DMA) engine.
  • 13. The apparatus of claim 7, wherein the storage circuit comprises a circular buffer.
  • 14. A method, comprising: providing data to a buffer based, at least in part, on a first signal;providing the data from the buffer based, at least in part, on a second signal;comparing a time at which the data is provided to the buffer and a time at which the data is provided by the buffer; andadjusting a rate at which data is provided to the buffer based, at least in part, on the comparison.
  • 15. The method of claim 14, further comprising: incrementing a write pointer responsive to providing data to the buffer; andincrementing a read pointer responsive to providing data from the buffer.
  • 16. The method of claim 14, wherein the data is a first data, the method further comprising: adjusting a rate at which a second data is provided to the buffer based, at least in part, on the comparison.
  • 17. The method of claim 16, wherein adjusting a rate comprises: reducing the rate at which the second data is provided to the buffer responsive, at least in part, to the read pointer being too proximate to the write pointer; andincreasing the rate at which the second data is provided the buffer responsive, at least in part, to the read pointer being too remote from the write pointer.
  • 18. The method of claim 14, wherein providing the data from the buffer based, at least in part, on a second signal comprises: providing the data from the buffer based, at least in part, on a second signal, the second signal based, at least in part, on the first signal.
  • 19. The method of claim 14, further comprising: providing a second data from a memory at a rate adjusted to match a timing of the second signal.
  • 20. The method of claim 14, wherein the first signal comprises a read clock signal and the second signal comprises a core clock signal.
CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No. 12/233,492, filed Sep. 18, 2008, U.S. Pat. No. 8,392,686, which is a continuation of U.S. patent application Ser. No. 11/432,060, filed May 10, 2006, U.S. Pat. No. 7,434,081, which is a continuation of U.S. patent application Ser. No. 10/747,917, filed Dec. 29, 2003, U.S. Pat. No. 7,330,992. These applications and patents are incorporated by reference herein in their entirety and for all purposes.

US Referenced Citations (327)
Number Name Date Kind
4045781 Levy et al. Aug 1977 A
4240143 Besemer et al. Dec 1980 A
4245306 Besemer et al. Jan 1981 A
4253144 Bellamy et al. Feb 1981 A
4253146 Bellamy et al. Feb 1981 A
4608702 Hirzel et al. Aug 1986 A
4707823 Holdren et al. Nov 1987 A
4724520 Athanas et al. Feb 1988 A
4891808 Williams Jan 1990 A
4930128 Suzuki et al. May 1990 A
4953930 Ramsey et al. Sep 1990 A
5133059 Ziegler et al. Jul 1992 A
5241506 Motegi et al. Aug 1993 A
5243703 Farmwald et al. Sep 1993 A
5251303 Fogg, Jr. et al. Oct 1993 A
5269022 Shinjo et al. Dec 1993 A
5305389 Palmer Apr 1994 A
5317752 Jewett et al. May 1994 A
5319755 Farmwald et al. Jun 1994 A
5327553 Jewett et al. Jul 1994 A
5355391 Horowitz et al. Oct 1994 A
5421000 Fortino et al. May 1995 A
5432823 Gasbarro et al. Jul 1995 A
5432907 Picazo, Jr. et al. Jul 1995 A
5442770 Barratt Aug 1995 A
5461627 Rypinski Oct 1995 A
5465229 Bechtolsheim et al. Nov 1995 A
5465343 Henson et al. Nov 1995 A
5479370 Furuyama et al. Dec 1995 A
5497476 Oldfield et al. Mar 1996 A
5502621 Schumacher et al. Mar 1996 A
5544319 Acton et al. Aug 1996 A
5566325 Bruce, II et al. Oct 1996 A
5577220 Combs et al. Nov 1996 A
5581767 Katsuki et al. Dec 1996 A
5606717 Farmwald et al. Feb 1997 A
5613075 Wade et al. Mar 1997 A
5619670 Shindo Apr 1997 A
5638334 Farmwald et al. Jun 1997 A
5638534 Mote, Jr. Jun 1997 A
5659713 Goodwin et al. Aug 1997 A
5659798 Blumrich et al. Aug 1997 A
5706224 Srinivasan et al. Jan 1998 A
5715456 Bennett et al. Feb 1998 A
5729709 Harness Mar 1998 A
5748616 Riley May 1998 A
5796413 Shipp et al. Aug 1998 A
5818844 Singh et al. Oct 1998 A
5819304 Nilsen et al. Oct 1998 A
5822255 Uchida Oct 1998 A
5832250 Whittaker Nov 1998 A
5838931 Regenold et al. Nov 1998 A
5875352 Gentry et al. Feb 1999 A
5875454 Craft et al. Feb 1999 A
5887159 Burrows Mar 1999 A
5889714 Schumann et al. Mar 1999 A
5928343 Farmwald et al. Jul 1999 A
5953743 Jeddeloh Sep 1999 A
5966724 Ryan Oct 1999 A
5973935 Schoenfeld et al. Oct 1999 A
5973951 Bechtolsheim et al. Oct 1999 A
5978567 Rebane et al. Nov 1999 A
5987196 Noble Nov 1999 A
6006340 O'Connell Dec 1999 A
6023726 Saksena Feb 2000 A
6029250 Keeth Feb 2000 A
6031241 Silfvast et al. Feb 2000 A
6033951 Chao Mar 2000 A
6061263 Boaz et al. May 2000 A
6061296 Ternullo, Jr. et al. May 2000 A
6067262 Irrinki et al. May 2000 A
6073190 Rooney Jun 2000 A
6076139 Welker et al. Jun 2000 A
6079008 Clery, III Jun 2000 A
6092158 Harriman et al. Jul 2000 A
6098158 Lay et al. Aug 2000 A
6105075 Ghaffari Aug 2000 A
6125431 Kobayashi Sep 2000 A
6128703 Bourekas et al. Oct 2000 A
6128706 Bryg et al. Oct 2000 A
6131149 Lu et al. Oct 2000 A
6134624 Burns et al. Oct 2000 A
6134643 Kedem et al. Oct 2000 A
6137709 Boaz et al. Oct 2000 A
6144587 Yoshida Nov 2000 A
6145033 Chee Nov 2000 A
6157743 Goris et al. Dec 2000 A
6157962 Hodges et al. Dec 2000 A
6167465 Parvin et al. Dec 2000 A
6167486 Lee et al. Dec 2000 A
6175571 Haddock et al. Jan 2001 B1
6185352 Hurley Feb 2001 B1
6185676 Poplingher et al. Feb 2001 B1
6186400 Dvorkis et al. Feb 2001 B1
6191663 Hannah Feb 2001 B1
6201724 Ishizaki et al. Mar 2001 B1
6208180 Fisch et al. Mar 2001 B1
6212590 Melo et al. Apr 2001 B1
6216178 Stracovsky et al. Apr 2001 B1
6216219 Cai et al. Apr 2001 B1
6219725 Diehl et al. Apr 2001 B1
6223259 Zervens et al. Apr 2001 B1
6223301 Santeler et al. Apr 2001 B1
6233376 Updegrove May 2001 B1
6243769 Rooney Jun 2001 B1
6243831 Mustafa et al. Jun 2001 B1
6246618 Yamamoto et al. Jun 2001 B1
6247107 Christie Jun 2001 B1
6249802 Richardson et al. Jun 2001 B1
6252821 Nizar et al. Jun 2001 B1
6256692 Yoda et al. Jul 2001 B1
6272609 Jeddeloh Aug 2001 B1
6285349 Smith Sep 2001 B1
6286083 Chin et al. Sep 2001 B1
6294937 Crafts et al. Sep 2001 B1
6301637 Krull et al. Oct 2001 B1
6321233 Larson Nov 2001 B1
6327642 Lee et al. Dec 2001 B1
6330205 Shimizu et al. Dec 2001 B2
6330639 Fanning et al. Dec 2001 B1
6347055 Motomura Feb 2002 B1
6349363 Cai et al. Feb 2002 B2
6356573 Jonsson et al. Mar 2002 B1
6367074 Bates et al. Apr 2002 B1
6370068 Rhee Apr 2002 B2
6370611 Callison et al. Apr 2002 B1
6373777 Suzuki Apr 2002 B1
6381190 Shinkai Apr 2002 B1
6389514 Rokicki May 2002 B1
6392653 Malandain et al. May 2002 B1
6401213 Jeddeloh Jun 2002 B1
6405280 Ryan Jun 2002 B1
6421744 Morrison et al. Jul 2002 B1
6430696 Keeth Aug 2002 B1
6433785 Garcia et al. Aug 2002 B1
6434639 Haghighi Aug 2002 B1
6434696 Kang Aug 2002 B1
6434736 Schaecher et al. Aug 2002 B1
6438622 Haghighi et al. Aug 2002 B1
6438668 Esfahani et al. Aug 2002 B1
6449308 Knight, Jr. et al. Sep 2002 B1
6453393 Holman et al. Sep 2002 B1
6460108 McCoskey et al. Oct 2002 B1
6460114 Jeddeloh Oct 2002 B1
6462978 Shibata et al. Oct 2002 B2
6463059 Movshovich et al. Oct 2002 B1
6467013 Nizar Oct 2002 B1
6470422 Cai et al. Oct 2002 B2
6473828 Matsui Oct 2002 B1
6477592 Chen et al. Nov 2002 B1
6477614 Leddige et al. Nov 2002 B1
6477621 Lee et al. Nov 2002 B1
6479322 Kawata et al. Nov 2002 B2
6487628 Duong et al. Nov 2002 B1
6490188 Nuxoll et al. Dec 2002 B2
6493803 Pham et al. Dec 2002 B1
6496193 Surti et al. Dec 2002 B1
6496909 Schimmel Dec 2002 B1
6501471 Venkataraman et al. Dec 2002 B1
6502161 Perego et al. Dec 2002 B1
6505287 Uematsu Jan 2003 B2
6523092 Fanning Feb 2003 B1
6523093 Bogin et al. Feb 2003 B1
6526483 Cho et al. Feb 2003 B1
6539490 Forbes et al. Mar 2003 B1
6552564 Forbes et al. Apr 2003 B1
6553476 Ayaki et al. Apr 2003 B1
6564329 Cheung et al. May 2003 B1
6587912 Leddige et al. Jul 2003 B2
6590816 Perner Jul 2003 B2
6594713 Fuoco et al. Jul 2003 B1
6594722 Willke, II et al. Jul 2003 B1
6598154 Vaid et al. Jul 2003 B1
6611884 Castellano Aug 2003 B2
6615325 Mailloux et al. Sep 2003 B2
6622227 Zumkehr et al. Sep 2003 B2
6628294 Sadowsky et al. Sep 2003 B1
6629220 Dyer Sep 2003 B1
6631440 Jenne et al. Oct 2003 B2
6633959 Arimilli et al. Oct 2003 B2
6636110 Ooishi et al. Oct 2003 B1
6646929 Moss et al. Nov 2003 B1
6647470 Janzen Nov 2003 B1
6658509 Bonella et al. Dec 2003 B1
6662304 Keeth et al. Dec 2003 B2
6665202 Lindahl et al. Dec 2003 B2
6667895 Jang et al. Dec 2003 B2
6681292 Creta et al. Jan 2004 B2
6681302 Cho et al. Jan 2004 B2
6697926 Johnson et al. Feb 2004 B2
6704817 Steinman et al. Mar 2004 B1
6715018 Farnworth et al. Mar 2004 B2
6718440 Maiyuran et al. Apr 2004 B2
6721195 Brunelle et al. Apr 2004 B2
6724685 Braun et al. Apr 2004 B2
6728800 Lee et al. Apr 2004 B1
6735679 Herbst et al. May 2004 B1
6735682 Segelken et al. May 2004 B2
6745275 Chang Jun 2004 B2
6748493 Arroyo et al. Jun 2004 B1
6751703 Chilton Jun 2004 B2
6754117 Jeddeloh Jun 2004 B2
6754812 Abdallah et al. Jun 2004 B1
6756661 Tsuneda et al. Jun 2004 B2
6760833 Dowling Jul 2004 B1
6771538 Shukuri et al. Aug 2004 B2
6772295 Spencer et al. Aug 2004 B2
6775747 Venkatraman Aug 2004 B2
6779036 Deshpande Aug 2004 B1
6782466 Steele et al. Aug 2004 B1
6788104 Singh et al. Sep 2004 B2
6792059 Yuan et al. Sep 2004 B2
6792496 Aboulenein et al. Sep 2004 B2
6795899 Dodd et al. Sep 2004 B2
6799246 Wise et al. Sep 2004 B1
6799268 Boggs et al. Sep 2004 B1
6804760 Wiliams Oct 2004 B2
6804764 Laberge et al. Oct 2004 B2
6807630 Lay et al. Oct 2004 B2
6811320 Abbott Nov 2004 B1
6816947 Huffman Nov 2004 B1
6820181 Jeddeloh et al. Nov 2004 B2
6821029 Grung et al. Nov 2004 B1
6823023 Hannah Nov 2004 B1
6829705 Smith Dec 2004 B2
6832303 Tanaka Dec 2004 B2
6845409 Talagala et al. Jan 2005 B1
6889304 Perego et al. May 2005 B2
6910109 Holman et al. Jun 2005 B2
6928528 Hewitt Aug 2005 B1
6941433 Libby et al. Sep 2005 B1
6980042 LaBerge Dec 2005 B2
7006505 Bleszynski et al. Feb 2006 B1
7107415 Jeddeloh et al. Sep 2006 B2
7117316 Jeddeloh Oct 2006 B2
7120727 Lee et al. Oct 2006 B2
7133972 Jeddeloh Nov 2006 B2
7162567 Jeddeloh Jan 2007 B2
7188219 Jeddeloh Mar 2007 B2
7213082 Jeddeloh May 2007 B2
7249236 Jeddeloh et al. Jul 2007 B2
7254075 Woo et al. Aug 2007 B2
7260685 Lee et al. Aug 2007 B2
7315053 Hosomi et al. Jan 2008 B2
7318130 Morrow et al. Jan 2008 B2
7330992 Jeddeloh et al. Feb 2008 B2
7343444 Lee et al. Mar 2008 B2
7353320 Jeddeloh Apr 2008 B2
7434081 Jeddeloh et al. Oct 2008 B2
8392686 Jeddeloh et al. Mar 2013 B2
20010037428 Hsu et al. Nov 2001 A1
20010039612 Lee Nov 2001 A1
20020002656 Honma et al. Jan 2002 A1
20020078298 Jeddeloh Jun 2002 A1
20020112119 Halbert et al. Aug 2002 A1
20020116588 Beckert et al. Aug 2002 A1
20020120709 Chow et al. Aug 2002 A1
20020144064 Fanning Oct 2002 A1
20020178319 Sanchez-Olea Nov 2002 A1
20030005223 Coulson et al. Jan 2003 A1
20030014578 Pax Jan 2003 A1
20030043158 Wasserman et al. Mar 2003 A1
20030043426 Baker et al. Mar 2003 A1
20030093630 Richard et al. May 2003 A1
20030149809 Jensen et al. Aug 2003 A1
20030156639 Liang Aug 2003 A1
20030158995 Lee et al. Aug 2003 A1
20030163649 Kapur et al. Aug 2003 A1
20030177320 Sah et al. Sep 2003 A1
20030193927 Hronik Oct 2003 A1
20030215042 Gauthier et al. Nov 2003 A1
20030217223 Nino, Jr. et al. Nov 2003 A1
20030223295 Ozguz et al. Dec 2003 A1
20030227798 Pax Dec 2003 A1
20030229762 Maiyuran et al. Dec 2003 A1
20030229770 Jeddeloh Dec 2003 A1
20030235072 Kim et al. Dec 2003 A1
20040006671 Handgen Jan 2004 A1
20040015666 Rojas et al. Jan 2004 A1
20040019728 Sharma Jan 2004 A1
20040022094 Radhakrishnan et al. Feb 2004 A1
20040024959 Taylor Feb 2004 A1
20040024978 Jeddeloh Feb 2004 A1
20040034753 Jeddeloh Feb 2004 A1
20040034825 Jeddeloh Feb 2004 A1
20040039886 Christofferson et al. Feb 2004 A1
20040044833 Ryan Mar 2004 A1
20040049649 Durrant Mar 2004 A1
20040064602 George Apr 2004 A1
20040122988 Han et al. Jun 2004 A1
20040126115 Levy et al. Jul 2004 A1
20040144994 Lee et al. Jul 2004 A1
20040158677 Dodd Aug 2004 A1
20040170196 Susnow Sep 2004 A1
20040236885 Fredriksson et al. Nov 2004 A1
20040260864 Lee et al. Dec 2004 A1
20040260909 Lee et al. Dec 2004 A1
20040268061 Khare et al. Dec 2004 A1
20050044327 Howard et al. Feb 2005 A1
20050060533 Woo et al. Mar 2005 A1
20050066137 Jeddeloh et al. Mar 2005 A1
20050071542 Weber et al. Mar 2005 A1
20050078506 Rao et al. Apr 2005 A1
20050105350 Zimmerman May 2005 A1
20050149774 Jeddeloh et al. Jul 2005 A1
20050172084 Jeddeloh Aug 2005 A1
20050216678 Jeddeloh Sep 2005 A1
20050223161 Jeddeloh Oct 2005 A1
20050246558 Ku Nov 2005 A1
20050257005 Jeddeloh Nov 2005 A1
20050286506 LaBerge Dec 2005 A1
20060085616 Zeighami et al. Apr 2006 A1
20060168407 Stern Jul 2006 A1
20060200642 LaBerge Sep 2006 A1
20060206679 Jeddeloh et al. Sep 2006 A1
20060212655 Jeddeloh Sep 2006 A1
20060212666 Jeddeloh Sep 2006 A1
20060288172 Lee et al. Dec 2006 A1
20070011392 Lee et al. Jan 2007 A1
20070033353 Jeddeloh Feb 2007 A1
20070055817 Jeddeloh Mar 2007 A1
20070088915 Archambault et al. Apr 2007 A1
20070113027 Jeddeloh May 2007 A1
20070271435 Jeddeloh et al. Nov 2007 A1
20090013143 Jeddeloh et al. Jan 2009 A1
20090125688 Jeddeloh May 2009 A1
20130326164 Jeddeloh Dec 2013 A1
Foreign Referenced Citations (28)
Number Date Country
0395559 Oct 1990 EP
0843261 May 1998 EP
0 849 685 Jun 1998 EP
0849685 Jun 1998 EP
1 199 637 Apr 2002 EP
2 244 157 Nov 1991 GB
2244157 Nov 1991 GB
02232890 Sep 1990 JP
06004401 Jan 1994 JP
06028180 Feb 1994 JP
06266616 Sep 1994 JP
08185383 Jul 1996 JP
08255107 Oct 1996 JP
10228413 Aug 1998 JP
2000268006 Sep 2000 JP
2001-265539 Sep 2001 JP
000067533 Nov 2000 KR
387072 Apr 2000 TW
491970 Jul 2002 TW
WO-9318459 Sep 1993 WO
WO-9319422 Sep 1993 WO
WO-9704401 Feb 1997 WO
WO-9923570 May 1999 WO
WO-9934294 Jul 1999 WO
WO-0026798 May 2000 WO
WO-0043902 Jul 2000 WO
WO-0227499 Apr 2002 WO
WO-03104996 Dec 2003 WO
Non-Patent Literature Citations (6)
Entry
“Free On-Line Dictionary of Computing”, http://foldoc.doc.ic.ac.uk/foldoc.cgi?flash+memory, Flash Erasable Programmable Read-Only Memory, May 17, 2004.
Hellwagner, Hermann et al., “Enabling a PC Cluster for High-Performance Computing”, The SpeedUp Journal, vol. 11, No. 1, Jun. 1997, 1-9.
Intel, “Intel 840 Chipset: 82840 Memory Controller Hub (MCH)”, Datasheet, www.intel.com/design/chipsets/datashts/298020.htm, Oct. 1999, 1-178.
Micron Technology, Inc., “Synchronous DRAM Module 512MB/1GB (x72, ECC) 168-PIN Registered FBGA SDRAM DIMM”, Micron Technology, Inc, Jun. 2002, 1-23.
Intel, “Flash Memory PCI Add-In Card for Embedded Systems”, Application Note AP-758, Sep. 1997, pp. i-13.
Shanley, T et al., “PCI System Architecture”, Third Edition. Mindshare, Inc., 1995, Jul. 1996, 24-25.
Related Publications (1)
Number Date Country
20130179658 A1 Jul 2013 US
Continuations (3)
Number Date Country
Parent 12233492 Sep 2008 US
Child 13784526 US
Parent 11432060 May 2006 US
Child 12233492 US
Parent 10747917 Dec 2003 US
Child 11432060 US