The subject matter disclosed herein relates to scannable circuits. More particularly, the subject matter disclosed herein relates to a system and a method for reducing power and leakage currents in a scannable circuit.
Scan-chain testing is a design-for-testability (DFT) technique that embeds hardware components in an integrated circuit (IC) design to detect manufacturing faults in the IC. The testability features of DFT components may be configured as a sequential element within a sequential logic path (e.g., a flip-flop, a latch, etc.) that may operate in a scannable mode (i.e., a test mode). Such DFT components are extraneous with respect to the normal (non-test mode) operation of the IC and may waste power due to switching current and/or leakage current during a normal operation of the IC.
An embodiment provides a scannable circuit element that may include a data path and a scan-data path. The data path may be selected in response to a first operational mode, and the scan-data path may be selectable in response to a second operational mode in which the second operational mode is complementary to the first operational mode. The scan-data path may include an input element that may have an input node, an output node, a first power node and a second power node. A signal path between the input node and the output node of the input element may be part of the scan-data path. The first power node may be coupled to a first voltage potential, and the second power node being may be coupled to a mode-control signal that is at substantially the first voltage potential in the first operational mode and that is at substantially a second voltage potential in the second operational mode. The second voltage potential may be different from the first voltage potential and the second voltage potential may correspond to a common ground potential. Substantially no current flows in the input element between the first power node and the second power node in the first operational mode, and a power supply current flows in the input element between the first power node and the second power node in the second operational mode. The input element may include a buffer, an inverter, a logic gate or a multiplexer.
An embodiment provides a scannable circuit element that may include a logic storage element, a data path and a scan-data path. The logic storage element may include an input. The data path may be coupled to the input of the logic storage element and the data path may be selected in response to a first operational mode. The scan-data path may be coupled to the input of the logic storage element and the scan-data path may be selectable in response to a second operational mode in which the second operational mode may be complementary to the first operational mode. The scan-data path may include an input element that may have an input node, an output node, a first power node and a second power node. A signal path between the input node and the output node of the input element may be part of the scan-data path. The first power node may be coupled to a first voltage potential, and the second power node may be coupled to a mode-control signal that is at substantially the first voltage potential in the first operational mode and that is at substantially a second voltage potential in the second operational mode. The second voltage potential may be different from the first voltage potential and the second voltage potential may corresponds to a common ground potential. Substantially no current flows in the input element between the first power node and the second power node in the first operational mode, and a power supply current flows in the input element between the first power node and the second power node in the second operational mode.
One embodiment provides a method to select a scan mode for a scannable circuit element that may include: selecting a data path in a scannable circuit element in response to a first operational mode in which the scannable circuit element may include the data path and a scan-data path; and selecting the scan-data path in response to a second operational mode in which the second operational mode may be complementary to the first operational mode, and in which the scan-data path may include an input element that may have an input node, an output node, a first power node and a second power node in which a signal path between the input node and the output node of the input element may be part of the scan-data path, the first power node may be coupled to a first voltage potential, and the second power node may be coupled to a mode-control signal that is at substantially the first voltage potential in the first operational mode and that is at substantially a second voltage potential in the second operational mode, and in which the second voltage potential may be different from the first voltage potential and the second voltage potential corresponding to a common ground potential.
In the following section, the aspects of the subject matter disclosed herein will be described with reference to exemplary embodiments illustrated in the figures, in which:
In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the disclosure. It will be understood, however, by those skilled in the art that the disclosed aspects may be practiced without these specific details. In other instances, well-known methods, procedures, components and circuits have not been described in detail not to obscure the subject matter disclosed herein.
Reference throughout this specification to “one embodiment” or “an embodiment” means that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment disclosed herein. Thus, the appearances of the phrases “in one embodiment” or “in an embodiment” or “according to one embodiment” (or other phrases having similar import) in various places throughout this specification may not be necessarily all referring to the same embodiment. Furthermore, the particular features, structures or characteristics may be combined in any suitable manner in one or more embodiments. In this regard, as used herein, the word “exemplary” means “serving as an example, instance, or illustration.” Any embodiment described herein as “exemplary” is not to be construed as necessarily preferred or advantageous over other embodiments. Also, depending on the context of discussion herein, a singular term may include the corresponding plural forms and a plural term may include the corresponding singular form. It is further noted that various figures (including component diagrams) shown and discussed herein are for illustrative purpose only, and are not drawn to scale. Similarly, various waveforms and timing diagrams are shown for illustrative purpose only. For example, the dimensions of some of the elements may be exaggerated relative to other elements for clarity. Further, if considered appropriate, reference numerals have been repeated among the figures to indicate corresponding and/or analogous elements.
The terminology used herein is for the purpose of describing particular exemplary embodiments only and is not intended to be limiting of the claimed subject matter. As used herein, the singular forms “a,” “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises” and/or “comprising,” when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. The terms “first,” “second,” etc., as used herein, are used as labels for nouns that they precede, and do not imply any type of ordering (e.g., spatial, temporal, logical, etc.) unless explicitly defined as such. Furthermore, the same reference numerals may be used across two or more figures to refer to parts, components, blocks, circuits, units, or modules having the same or similar functionality. Such usage is, however, for simplicity of illustration and ease of discussion only; it does not imply that the construction or architectural details of such components or units are the same across all embodiments or such commonly-referenced parts/modules are the only way to implement the teachings of particular embodiments disclosed herein.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this subject matter belongs. For example, the term “mod” as used herein means “modulo.” It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
The subject matter disclosed herein provides a scannable circuit element that may include a data path and a scan-data path. The data path may be selected in response to a first operational mode, whereas the scan-data path may be selectable in response to a second operational mode. In one embodiment, the scan-data path may include an input element that may include an input node, an output node, a first power node and a second power node. A signal path between the input node and the output node of the input element may be part of the scan-data path. The first power node may be coupled to a first voltage potential, and the second power node may be coupled to a mode-control signal that is at substantially the first voltage potential in the first operational mode and that is at substantially a second voltage potential in the second operational mode. If the scannable circuit element is in the second operational mode, the scannable element exhibits no switching current and no leakage current.
A scannable MS flip-flop 101-103 may include some internal scan-signal drive so circuits, such as buffers and inverters, may be used to drive and/or delay a signal arrival at a scan input pin SIN. For example, the pin SIN may be internally driven so circuits internal to the flip-flop are not externally slew-rate dependent. In some embodiments, a scan-chain flip-flop 101-103 may also be configured to include an inverter 106 and a multiplexer 107 in a scan-data path, and a master-slave (MS) flip-flop circuit 108, such as depicted in
The scan chain 100 may be configured so that the output of one scan-chain flip-flop is chained, or connected, to the next geographically closest scan-chain flip-flop input, which results in a minimal delay between the output and the input. Such a minimal delay may cause set-up and/or hold-time problems at the input of the next scan-chain flip-flop.
A conventional approach to reduce the set-up and/or hold-time problems is to include a delay circuit between the output of one scan-chain flip-flop and the input of the next scan-chain flip-flop.
The buffer chain 205 uses less power in the non-test mode than the buffer chain 201 because the scan-test enable signal SE gates the SIN signal and no switching occurs in the inverters 207 and 208 in the scan-test enable mode. The buffer chain 201 always switches in the scan-test enable mode thereby consuming power. Additionally, the gate 206 in the chain buffer 205 uses about an additional 10% area within a scan-chain flip-flop. Both the buffer chains 201 and 205 exhibit leakage current, even when switching is gated/disabled by an AND/NAND gate.
If the signal SEN is low (i.e., scan-test mode true, and SE=1 and SEN=0=GND), and the signal SIN is input to the inverter 301, the inverter 301 outputs a signal SI_int, which is an inverted version of the signal SIN. The signal SI_int is input to the inverter 302. The inverter 302 outputs a signal SIN_int, which is an inverted version of the signal SI_int. If the signal SEN is high (i.e., scan-test mode false, and SE=0 and SEN=1=VDD), the inverter 301 does not pass the signal SIN, and the inverter 302 does not switch. Accordingly, if the signal SEN signal is high (i.e., scan-test mode false), the buffer chain 300 has a reduced power consumption (no switching current), and the inverter 301 exhibits no leakage current.
If the signal SE is high and the signal SEN signal is low (i.e., scan-test mode true, and SE=1 and SEN=0=GND), and the signal SIN is input to the inverter 401, and the inverter 401 outputs a signal SI_int, which is an inverted version of the signal SIN. The inverters 402-404 respectively output a signal Sin_1, a signal Si_2, and a signal Sin_2. If the signal SE is low and the signal SEN is high (i.e., scan-test mode false, and SE=0 and SEN=1=VDD), all four inverters 401-404 are removed from the scan-data signal path, and the buffer chain 400 provides reduced power consumption (i.e., no switching current), and exhibits no leakage current. That is, if the signal SE is low, there is no leakage current in the inverters 401 and 403, which have a ground node connected to the signal SEN. Similarly, if the signal SE is low, there is no leakage current in the inverters 402 and 404, which have a VDD supply node connected to SE. The signals Si_1 and Si_2 are always at VDD so that any leakage current that flows, flows back to VDD (i.e., no leakage current). If the scan-test mode is not enabled, the buffer chain 400 does not switch (no power consumption). Moreover, buffer chain 400 includes no additional area or gates as compared to a conventional buffer chain, such as conventional buffer chain 205 in
Table 1 below sets forth signal levels for the buffer chain 400 depicted in
A “weak drive” condition may be avoided by including a transistor 506 coupled between VDD and the output of the inverter 501. In one embodiment, the transistor 506 may be a positive metal oxide semiconductor (PMOS) FET in which a source terminal of the transistor 506 may be coupled to VDD, a gate terminal of the transistor 506 may be coupled to the signal SE, and a drain terminal of the transistor 506 may be coupled to the output of a scan-chain element that receives the signal SIN. In
The inverter 601 may include a p-channel field effect transistor (FET) 605 and an n-channel FET 606. A source of the FET 605 may be connected to VDD, and a drain of the FET 605 may be connected to the drain of the FET 606. A source of the FET 606 may be connected to the signal SEN. The signal SEN may be generated from a scan-test enable signal SE, such as depicted in
The multiplexer 602 may include FETs 607-617. A source of the FET 607 may be connected to VDD, and a drain of the FET 607 may be connected to a source of the FET 608. A drain of the FET 608 may be connected to the source of the FET 609. The drain of the FET 609 may be connected to a common connection between the drain of FET 614 and the source of FET 615. The gates of the FETs 607 and 608 may be connected to the signal si. The gate of the FET 609 may be connected to the signal SEN.
The source of the FET 612 may be connected to the signal SEN, and the drain of the FET 612 may be connected to the source of the FET 611. The drain of the FET 611 may be connected to the source of the FET 610, and the drain of the FET 610 may be connected to a common connection between the source of the FET 616 and the drain of the FET 617. The gates of the FETs 611 and 612 may be connected to the signal si. The gate of the FET 610 may be connected to the signal SE.
The source of the FET 613 may be connected to VDD, and the drain of the FET 613 may be connected to the source of the FET 614. The drain of the FET 614 may be connected to the common connection between the drain of the FET 609 and the source of the FET 615. The gate of the FET 613 may be connected to an input signal D0, and the gate of the FET 614 may be connected to the signal SE.
The source of the FET 618 may be connected to VSS, and the drain of the FET 618 may be connected to the source of the FET 617. The drain of the FET 617 may be connected to the common connection between the drain of the FET 609 and the source of the FET 616. The gate of the FET 617 may be connected to the signal SEN. The gate of the FET 618 may be connected to the input signal D0.
The source of the FET 615 may be connected to the common connection between the drain of FET 609 and the drain of the FET 614. The drain of the FET 615 may be connected to the drain of the FET 616, and the source of the FET 616 may be connected to the common connection between the drain of the FET 610 and the drain of the FET 617. The gate of the FET 615 may be connected to the clock signal CKB, and the gate of the FET 616 may be connected to the clock signal CKN. The output of the multiplexer 603 is output from the common connection of the source of the FET 615 and the drain of the FET 616.
If the front end 600 depicted in
If the front end 600 is not in the scan-test mode (i.e., a normal mode), the signal SE will be low and the signal SEN will be high, in which case the FETs 606, 609-612 and 614 will be turned off, and the FET 617 will be turned on. If the FETs 606, 609-612 and 614 are turned off, no signal flows from the scan-data input SIN to the output signal MLN0. Instead, the data signal D0 is output as the signal MLN0. Further, if the FETs 606, 609-612 and 614 are turned off, the common ground node of the FETs 606 and 612 is at VDD, which prevents leakage current from flowing in the inverter 601 and the multiplexer 602.
It may be noted that the output inverter 601 may in some cases exhibit a “weak drive” condition. Such a weak drive condition may be prevented by using a transistor coupled between VDD and the output of the inverter 601, as described in connection with the buffer chain 500 depicted in
As will be recognized by those skilled in the art, the innovative concepts described herein can be modified and varied over a wide range of applications. Accordingly, the scope of claimed subject matter should not be limited to any of the specific exemplary teachings discussed above, but is instead defined by the following claims.
This patent application claims the priority benefit under 35 U.S.C. § 119(e) of U.S. Provisional Patent Application No. 62/511,318, filed on May 25, 2017, the disclosure of which is incorporated herein by reference in its entirety.
Number | Date | Country | |
---|---|---|---|
62511318 | May 2017 | US |